• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.347.1-347.1
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• 2016

Screen printing is commonly used to form the electrode for crystalline silicon solar cells. However, it has caused high resistance and low aspect ratio, resulting in decrease of conversion efficiency. Accordingly, Ni/Cu/Ag plating method could be applied for crystalline silicon solar cells to reduce contact resistance. For Ni/Cu/Ag plating, laser ablation process is required to remove anti-reflection layers prior to the plating process, but laser ablation results in surface damage and then decrease of open-circuit voltage and cell efficiency. Another issue with plating process is ghost plating. Ghost plating occurred in the non-metallized region, resulting from pin-hole in anti-reflection layer. In this paper, we investigated the effect of Ni/Cu/Ag plating on the electrical properties, compared to screen printing method. In addition, phosphoric acid layer was spin-coated prior to laser ablation to minimize emitter damage by the laser. Phosphorous elements in phosphoric acid generated selective emitter throughout emitter layer during laser process. Then, KOH treatment was applied to remove surface damage by laser. At this step, amorphous silicon formed by laser ablation was recrystallized during firing process and remaining of amorphous silicon was removed by KOH treatment. As a result, electrical properties as Jsc, FF and efficiency were improved, but Voc was lower than screen printed solar cells because Voc was decreased due to surface damage by laser process. Accordingly, we expect that efficiency of solar cells could be improved by optimization of the process to remove surface damage.

• Journal of the Korean institute of surface engineering
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• v.38 no.3
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• pp.118-125
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• 2005

Low temperature plasma treatment with different gases and rf powers were performed to improve the adhesion strength between polytetrafluoroethylene(PTFE) and electroless deposited copper. According to the research, $H_2$ plasma having hydrogen radical was more effective in surface polarity modification than $O_2$ plasma due to the defluorination reaction. However, surface roughness of PTFE was more increased with $O_2$ than $H_2$ plasma. PTFE treated with $120W-O_2$ plasma and $250w-H_2$ plasma, consecutively showed rougher surface than single step $250w-H_2$ plasma treated one and more hydrophilic than single step $120W-O_2$ plasma treated one. And it showed 5B tape test grade, which is better adhesion property than 1B or 3B obtained by single step plasma treatment. In addition, adhesion strength between PTFE and Cu deposit is also deeply affected by residual water on its interface.

• Transactions of the Korean hydrogen and new energy society
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• v.28 no.1
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• pp.70-76
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• 2017

To synthesize copper nanoparticle a thermal decomposition was adopted. And to solve the problem of surface oxidation of the synthesized copper powder an electroless Ag plating method was used. The size and shape of synthesized Cu nanoparticle were affected by the size of copper oxalate used as a precursor, reaction solvent, reaction temperature and amount of reducing agent. Especially reaction solvent is dominant factor to control shape of Cu nano-particle which can have the shapes of sphere, polygon and rod. In case of glycerol, it produced spherical shape of about 500 nm in size. Poly ethylene produced uniform polygonal shape in about 700 nm and ethylene glycol produced both of polygon and rod having size range between 500 and 1500 nm. The silver coated copper powder showed a high electrical conductivity.

• Korean Journal of Materials Research
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• v.11 no.5
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• pp.398-404
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• 2001

Effects of coating treatment of metallic Cu film on SiC for Al/SiC composite were studied. The Copper was deposited on SiC by electroless plating method. Al/sic composite was fabricated at temperature range of $670^{\circ}C$ to 90$0^{\circ}C$ under vacuum atmosphere. The wetting behavior of Al/SiC composite were analysed by SEM and XRD. The coating treatment on SiC improved wettability of Al melt on SiC considerably comparing to the non coated SiC. This improved wettability seems strongly concerned to the increase of chemical reactivity between coated layer and Al matrix. The improvement of wettability of Al melt on the Cu coated SiC was closely related to in the initial stage of reaction. The metallic film played an important role in reducing the interfacial free energy and breaking down the aluminum oxide film through the reaction with Al melt. The wetting behavior of the as-received SiC with Al melt was not uniform, indicated by the contact angles from less than $97^{\circ}$to more than $97^{\circ}$.

• Carbon letters
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• v.2 no.1
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• pp.15-21
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• 2001

In this work, activated carbon fibers (ACFs) were plated with copper metal using electroless plating method and the effects of surface properties and pore structures on chromium adsorption properties were investigated. Surface properties of ACFs have been characterized using pH and acid/base values. BET data with $N_2$ adsorption were used to obtain the structural parameters of ACFs. The electroless copper plating did significantly lead to a decrease in the surface acidity or to an increase in the surface basicity of ACFs. However, all of the samples possessed a well-developed micropore. The adsorption capacity of Cr(III) for the electroless Cu-plated ACFs was higher than that of the as-received, whereas the adsorption capacity of Cr(VI) for the former was lower than that of the latter. The adsorption rate constants ($K_1$, $K_2$, and $K_3$) were also evaluated from chromium adsorption isotherms. It was found that $K_1$ constant for Cr(III) adsorption depended largely on surface basicity. The increase of Cr(III) adsorption and the decrease of Cr(VI) adsorption were attributed to the formation of metal oxides on ACFs, resulting in increasing the surface basicity.

• Korean Chemical Engineering Research
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• v.46 no.5
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• pp.863-867
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• 2008

Pitch based activated carbon fiber(ACF) was prepared from reformed naphtha cracking bottom oil(NCB oil) by melt spinning. The fibers obtained were stabilized, carbonized, and then steam activated. The ACF was sensitized with Pd-Sn catalytic nuclei via a single-step activation approach. This sensitized ACF was used as precursors for obtaining copper plated ACFs via electroless plating. ACFs uniformly decorated with metal particles were obtained with reduced copper plating in the reaction solution. Effects of the amount of copper on characteristics of ACF/Cu catalysts were investigated through BET surface area, X-ray diffraction, scanning emission microscopy, and ICP. The amount of copper increased with plating time, but the surface area as well as the pore volume decreased. NO conversion increased with reaction temperature. NO conversion decreased with increasing the amount of copper, which is seemed to be due to the reduction of surface area as well as the dispersion of copper.

• Korean Chemical Engineering Research
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• v.45 no.6
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• pp.633-637
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• 2007

Electroless plating of Co-alloy thin films as capping layers for Cu interconnection has been investigated using alkali-free precursors such as $(NH_4)_2Co(SO_4)_2{\cdot}6H_2O$, $(NH_4)_2WO_4$, $(NH_4)H_2PO_4$, etc. The characteristics of the Co-alloy thin films were discussed by analyses of the effects of pH, Co-precursor concentration, and deposition temperature on the thickness and surface morphology of the films. The thickness of the Co-alloy thin films increased with increasing pH, Co-precursor concentration, and deposition temperature, similarly to the results of electroless plating of Co-alloy thin films using alkali-containing chemicals. The SEM images of the surface of the Co-alloy thin films showed that the proper ranges of pH and deposition temperature were 8.5~9.5 and $75{\sim}85^{\circ}C$, respectively. This work found a feasibility that Co-alloy thin films as capping layers for Cu interconnection could be electroless plated using alkali-free chemicals.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2008.11a
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• pp.15-16
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• 2008

In case manufacturing COF, through hole should be made to be used for a pathway connecting the conductive layers of its both faces. In case Cu-plating inside of through hole with electroless plating way, contact between Cu and PI film gets bad to be fell apart from PI by the impact of applying to the electric devices. Therefore, after sputtering is applying on inner through hole, then a method to perform electroplating process. In this study, after changing sputtering condition to manufacture FCCL, we looked the changeability of the upper PI and inner hole Cu layers. Making use of RF Magnetron sputtering equipment, we coated Cu thin film and Cu-plated on it through electroplating. After cold-mounting the completed FCCL, we examined hole section through an optical microscope. From the result of test, with parameters deposition pressure and deposition time, both the thickness of the hole plated layer and PI plated upper layer increased at regular rate, increasing the thickness of Cu sputter layer. However, from the result of test in increasing RF-power, we could know the increment rate of hole plated layer is considerably greater than that of PI plated upper layer. Therefore, we finally acquired good result; if you want only to increase the plated layer of inner hole, it's much better to increase RF-power.

• Journal of the Microelectronics and Packaging Society
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• v.15 no.3
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• pp.27-33
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• 2008

With increasing use of portable appliances such as PDA and cellular phone, changing environment of applications requires higher solder joint reliability. The ENIG (Electroless Nickel Immersion Gold) process has been widely used for fine pitch SMT (Surface Mount Technology) and BGA (Ball Grid Array) packaged devices due to its benefits including excellent solderability, high uniformity and substantial legibility throughout the packaging process. Its brittle fracture of solder, however, has received increasingly attentions. It was Down that fracture brittleness is mainly related with black pad resulting from galvanic nickel corrosion and P-enriched layer formation between the IMC (Intermetallic Compounds) and electroless nickel layer. Theoretically, smooth electroless Ni layer was blown to have a advantages in minimizing the black pad phenomenon by uniform solution exchange during immersion gold plating. Nevertheless, how to control the surface morphology of electroless Ni layer has been hardly blown. This study investigates an effect of surface morphology of Cu underlayer on surface morphology of electroless Ni layer. To obtain various kinds of surface morphology of Cu layer, two types of Cu etching chemical and a number of Cu etching treatment were applied.

• Korean Journal of Materials Research
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• v.11 no.11
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• pp.923-928
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• 2001

An electrolytic silver plating process has been successfully developed for terminated electrode parts of dielectric ceramic resonator. High adhesion strength and high Qu is obtained and blister occurance is minimized under plating condition with $HNO_3$750 $m\ell/\ell$ and HF $ 250m\ell/\ell$ solution at $25^{\circ}C$ for 20 minutes. Adhesion strength has the highest value, 3.2 kg/mm$^2$ at etching temperature of $25^{\circ}C$. Adhesion strength, Qu and blister occurance are monotonically increased with the thickness of electrodeposition layer. In case of electrodeposition of Ag, Qu value of 380 has obtained higher than in case of electrolytic Cu plating with Qu value of 325. Therefore, terminated electrode parts of dielectric ceramic resonator reducing dielectric loss can be obtained using prensent process.