• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2002.07a
• /
• pp.362-365
• /
• 2002

Hf thin films were deposited on bottom metal using a RF magnetron sputtering method followed by oxidation and annealing in O$_2$ and N$_2$ ambient, respectively. Various top metal electrodes (i.e., Al, Au, and Cu) were deposited by evaporation, and their roles on physical and electrical properties were investigated. Using the XRD, SEM and AFM techniques, we confirmed that the grain size of HfO$_2$ thin films enlarges as a function of oxidation temperature, increasing dielectric constant. However, other electrical properties (e.g., tan) deteriorateas a consequence. The dielectric constant and tan of HfO$_2$ thin films oxidized at 500 $^{\circ}C$ were 17-25 and 3${\times}$10-3 - 2x10-2, respectively, in the frequency range of 1 Hz to 1 MHz. The leakage current density was less than 1${\times}$10-8A/cm2 up to 0.7 MV/cm. In addition, electrical properties of HfO$_2$ thin films (e.g., the dielectric constant, leakage current and tan $\delta$) depend on top metal electrode. We showed that Al top metal electrode results in the best result.

• Proceedings of the KIEE Conference
• /
• 2002.07c
• /
• pp.1397-1399
• /
• 2002

Effects of bottom electrode materials (Al, Cu, Ti, and Mo), included in film bulk acoustic resonators (FBARs), on the orientation of piezoelectric AlN thin films and the frequency response characteristic of resonators were investigated. The texture coefficient (TC) for (002) orientation, crystallite size, full width half maximum (FWHM), and surface roughness of deposited AlN films were measured for the various bottom electrodes. The return tosses estimated from the frequency responses of fabricated resonators were also compared. Experimental results showed that the difference of lattice constant and thermal expansion coefficient between the bottom electrode and the AlN film were the most important factors for achieving a high performance resonator.

• Proceedings of the Korean Institute of Surface Engineering Conference
• /
• 2017.05a
• /
• pp.123.1-123.1
• /
• 2017

Hybrid solar cells have intensively studied in recent years due to their advantages such as cost effectiveness and possibility of applications in flexible and transparent devices. It is critical to fabricate individual layer composed of organic and inorganic materials in the hybrid solar cell at low cost. Therefore, it is required to manufacture cheaply and enhance the photon-to-electricity conversion efficiency of each layer in the flexible solar cell industry. In this research, we fabricated pure Cu metal mesh electrode prepared by using electroplating and/or electroless plating on the Ni mold which was manufacture through photolithography, electroforming, and polishing process. Copper mesh was formed on the surface of nickel metal working master when pulsed electrolytic copper deposition were performed at various plating parameters such as plating time, current density, and so on. After electrodeposition at 2ASD for 5~30seconds, the line/pitch/thickness of copper mesh sheet was $1.8{\sim}2.0/298/0.5{\mu}m$.

• Analytical Science and Technology
• /
• v.8 no.1
• /
• pp.25-32
• /
• 1995

Determination method of trace thioglycolate has been studied by adsorptive stripping voltammetry. Copper(II)-thioglycolate complex is adsorbed at the hanging mercury drop electrode and stripped during cathodic scan. Electrolyte was used pH 6.5 phosphate and pH 9.5 borate buffer solutions. Optimal conditions were a copper(II) concentration $1{\times}10^{-4}M$, an adsorption accumulation potential -0.2V, an adsorption accumulation time 60 sec and a scan rate 20mV/sec. A detection limit of $1{\times}10^{-9}M$ thioglycolate was obtained. The method was applied to the determination of thioglycolate in cold wave fluids and depilating creams.

• Journal of radiological science and technology
• /
• v.9 no.1
• /
• pp.73-81
• /
• 1986

This paper carried out an experiment on the characteristics of time, temperature, electric field and the dependense of electrode materials and gap length by the conduction current of the insulating oil used for x-ray tube housing. The obtained results can be summarized as following: 1. In the x-ray tube housing insulating oil with vacuum condition, conduction current is declined more than the x-ray tube housing insultaing oil with the air, and is held stable states. 2. At the low electric field the higher temperature of the x-ray tube housing insulating oil is increased, the more conduction current. 3. The dependence of electrode material is appeared at the low electric field and the short gap length than the high and the long with Fe> Cu >Al. 4. At the I-E characteristics, the low electric field than 1000 [V/cm] is appeared Ohm's law region, and the high become saturation region. 5. At the same electric field, the longer gap length become, the more conduction current is increased, and the same applied voltage, the longer, the less conduction current is decreased, the less low than high temperature x-ray tube housing insulating oil.

• Proceedings of the KIEE Conference
• /
• 1998.07e
• /
• pp.1687-1689
• /
• 1998

In this work, the behaviours of conducting wire type particles within the coaxial electrode gap energized with high ac voltage have been systematically investigated using charge simulation method. For this, spheroidal charge is adopted as a image charge for the CSM analysis in order to calculate the acquired charge of the particles which are erected on the surface of the outer electrode. For this purpose, the effects of the lengths and diameters of Cu, Al particles in gas insulated system have been studied by a numerical computation and particle lifting voltage, lifting field, breakdown voltage, acquired charge and travelling distance have been considered. From this, we understand that the particle behaviours have different characteristics according to the particle lengths and diameters. And a possible countermeasure, based on the proposed simulation, has been provided with a view to estimating the flashover voltage of $SF_6$ gas under the 1 atm.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2013.02a
• /
• pp.433-433
• /
• 2013

Graphene, $sp^2$-hybridized 2-Dimension carbon material, has drawn enormous attention due to its desirable performance of excellent properties. Graphene can be applied for many electronic devices such as field-effect transistors (FETs), touch screen, solar cells. Furthermore, indium tin oxide (ITO) is commercially used and sets the standard for transparent electrode. However, ITO has certain limitations, such as increasing cost due to indium scarcity, instability in acid and basic environments, high surface roughness and brittle. Due to those reasons, graphene will be a perfect substitute as a transparent electrode. We report the graphene synthesized by inductive coupled plasma enhanced chemical vapor deposition (ICP-PECVD) process on Cu substrate. The growth was carried out using low temperature at $400^{\circ}C$ rather than typical chemical vapor deposition (CVD) process at $1,000^{\circ}C$ The low-temperature process has advantage of low cost and also low melting point materials will be available to synthesize graphene as substrate, but the drawback is low quality. To improve the quality, the factor affect the quality of graphene was be investigated by changing the plasma power, the flow rate of precursors, the scenario of precursors. Then, graphene film's quality was investigated with Raman spectroscopy and sheet resistance and optical emission spectroscopy.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2008.06a
• /
• pp.92-92
• /
• 2008

PDP의 저가화, 친환경화, 고화질화는 타 디스플레이와 경쟁을 위해 필수적이고 그로 인한 소재의 개발이 필요하다. 저가화는 부품, 공정에서도 가능하지만 소재에서의 원가가 상당부분을 차지하고 있기 때문에 소재 개발이 중요하며, 친환경화는 현재 유전체에서 많이 사용되고 있는 유해소재를 친환경 소재로 대체함으로써 개발이 이루어지고 있다. 그래서 우리는 현재 PDP에서 전극물질로 사용되어지는 고가의 Ag를 Gu입자에 Ag 박막으로 코팅한 Ag/Cu 전극 powder를 사용하여 저가의 전극 paste를 만들고 스크린 프린터와 노광장비를 사용하여 전극을 형성하였다. 그 후 친환경적인 Pb free 투명유전체를 입히고 전극과의 상호 매칭성을 연구 하였다. 결과적으로 기존 PDP 공정에서 볼 수 없었던 황변현상, 전극착색현상, 전극입자의 터짐성 등 많은 현상이 일어났지만, 기존 공정 온도보다 낮은 온도로 공정한 결과, 이러한 문제들이 줄어드는 것을 확인하였다. 이로써 공정단가의 저가화와 제품의 친환경을 가면서도 기존과 차이가 제품을 실현할 수 있을 것이다.

• Ceramist
• /
• v.22 no.2
• /
• pp.146-169
• /
• 2019

To overcome the theoretical efficiency of single-junction solar cells (> 30 %), tandem solar cells (or multi-junction solar cells) is considered as a strong nominee because of their excellent light utilization. Organic-inorganic halide perovskite has been regarded as a promising candidate material for next-generation tandem solar cell due to not only their excellent optoelectronic properties but also their bandgap-tune-ability and low-temperature process-possibility. As a result, they have been adopted either as a wide-bandgap top cell combined with narrow-bandgap silicon or CuIn_xGa_(1-x)Se₂ bottom cells or for all-perovskite tandem solar cells using narrow- and wide-bandgap perovskites. To successfully transition perovskite materials from for single junction to tandem, substantial efforts need to focus on fabricating the high quality wide- and narrow-bandgap perovskite materials and semi-transparent electrode/recombination layer. In this paper, we present an overview of the current research and our outlook regarding perovskite-based tandem solar technology. Several key challenges discussed are: 1) a wide-bandgap perovskite for top-cell in multi-junction tandem solar cells; 2) a narrow-bandgap perovskite for bottom-cell in all-perovskite tandem solar cells, and 3) suitable semi-transparent conducting layer for efficient electrode or recombination layer in tandem solar cells.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.11 no.4
• /
• pp.281-287
• /
• 1998

$BiNbO_4$ ceramics doped with 0.07wt% $V_2O_5$ and 0.03wt% CuO (BNC3V7) were sucessfully sintered at $900^{\circ}C$ through the firing process with Ag electrode. The BNC3V7 shows typically Dielectric constant of 44.3, Thermal Coefficient of resonance Frequency(TCF) of 2 ppm/$^{\circ} and $Qxf_o$ value of 22,000 GHz. The laminated chip Low Pass Filter (LPF) is very sensitive to chip processing parameters, was confirmed by the computer simulation as a function of Q(Quality factors), filter size, capacitor layer thickness, inductor pattern widths. The multilayer type LPF was fabricated by screen-printing with Ag electrode after tape casting and then compared with the simulated characteristics. The results show that characterization of band pass width was similar to that of designed ones.