• Title/Summary/Keyword: Cu doping

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Doping Characteristics of Bi System Superconductor (Bi계 초전도체의 도우핑 특성)

  • Yang, Sung-Ho;Jung, Jin-In;Park, Yong-Pil
    • Proceedings of the KIEE Conference
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    • 1999.11d
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    • pp.915-917
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    • 1999
  • We investigated the effects of doping elements on the Bi system superconductor. The doping elements can be classified into two groups depending on their supeconducting characteristics in the Bi-Sr-Ca-Cu-O structure. The first group of doping elements(P and K) have a tendency to decompose the superconducting phase and reduce the optimal sintering temperature. The second group of doping elements(B, Si, Sn and Ba) almost uneffected the superconductivity of the 2223 and 2212 phase.

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Cu-doped Programmable Metallization Cell의 스위칭 특성 연구

  • Nam, Gi-Hyeon;Jeong, Hong-Bae
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2009.11a
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    • pp.57-57
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    • 2009
  • Programmable Metallization Cell (PMC) is a memory device based on the electrolytical characteristic of chalcogenide materials. We investigated the nature of thin films formed by photo doping of Cu ions into chalcogenide materials for use in solid electrolyte of PMC. We were able to do more economical approach by using copper which play an electrolyte ions role. The results imply that a Cu-rich phase separates owing to the reaction of Cu with free atoms from chalcogenide materials.

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Production of Hydrogen and Carbon Nanotubes from Catalytic Decomposition of Methane over Ni:Cu/Alumina Modified Supported Catalysts

  • Hussain, Tajammul;Mazhar, Mohammed;Iqbal, Sarwat;Gul, Sheraz;Hussain, Muzammil;Larachi, Faical
    • Bulletin of the Korean Chemical Society
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    • v.28 no.7
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    • pp.1119-1126
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    • 2007
  • Hydrogen gas and carbon nanotubes along with nanocarbon were produced from commercial natural gas using fixed bed catalyst reactor system. The maximum amount of carbon (491 g/g of catalyst) formation was achieved on 25% Ni, 3% Cu supported catalyst without formation of CO/CO2. Pure carbon nanotubes with length of 308 nm having balloon and horn type shapes were also formed at 673 K. Three sets of catalysts were prepared by varying the concentration of Ni in the first set, Cu concentration in the second set and doping with K in the third set to investigate the effect on stabilization of the catalyst and production of carbon nanotubes and hydrogen by copper and potassium doping. Particle size analysis revealed that most of the catalyst particles are in the range of 20-35 nm. All the catalysts were characterized using powder XRD, SEM/EDX, TPR, CHN, BET and CO-chemisorption. These studies indicate that surface geometry is modified electronically with the formation of different Ni, Cu and K phases, consequently, increasing the surface reactivity of the catalyst and in turn the Carbon nanotubes/H2 production. The addition of Cu and K enhances the catalyst dispersion with the increase in Ni loadings and maximum dispersion is achieved on 25% Ni: 3% Cu/Al catalyst. Clearly, the effect of particle size coupled with specific surface geometry on the production of hydrogen gas and carbon nanotubes prevails. Addition of K increases the catalyst stability with decrease in carbon formation, due to its interaction with Cu and Ni, masking Ni and Ni:Cu active sites.

A study on the synthesis and formation behavior of nanostructrued TiN films by metal doping (금속원소 도핑에 따른 초고경도 나노구조 TiN 박막의 합성 및 형성 거동에 관한 연구)

  • 명현식;한전건
    • Journal of the Korean Vacuum Society
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    • v.12 no.3
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    • pp.193-199
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    • 2003
  • Ti-Cu-N and Ti-Ag-N nanocomposite films with various copper and silver contents were synthesized by arc ion plating and magnetron sputtering hybrid system. The structure and mechanical properties of these films were found to be dependant on the copper and silver concentration. The maximum hardness of Ti-Cu-N and Ti-Ag-N films showed approximately 40 ㎬ below 2 at%Me. The role of soft metallic phase in Ti-Me-N nanosturctured films containing one hard and one soft phase is also discussed.

Stability Improvement of CdTe Solar Cells using ZnTe:Na Back Contact (Na 도핑된 ZnTe 후면전극을 이용한 CdTe 태양전지의 안정성 개선에 관한 연구)

  • Cha, Eun Seok;Park, Kyu Charn;Ahn, Byung Tae
    • Current Photovoltaic Research
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    • v.3 no.1
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    • pp.10-15
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    • 2015
  • Cu doping by copper or $Cu_2Te$ materials enhances p+ formation in CdTe near the back contact interface, allowing better formation of ohmic contact. However, the Cu in CdTe junction is also considered as a principal component of CdTe cell degradation. In this paper, Na-doped ZnTe layer was employed as a back contact material to improve the stability of CdTe solar cells. As a process variable, post $CdCl_2$ treatment of CdS/CdTe film was conducted before or after depositing ZnTe:Na on CdTe. The change of the photovoltaic properties of CdTe cells were investigated with aging time. Low-temperature photoluminescence analysis was conducted to describe the degradation mechanism. The result showed that the CdTe solar cells with better stability compare to Cu contact were achieved using an optimized ZnTe:Na back contact.

Influence of Cu Doping and Heat Treatments on the Physical Properties of ZnTe Films (Cu 도핑과 열처리가 ZnTe 박막의 물성에 미치는 영향)

  • Choe, Dong-Il;Yun, Se-Wang;Kim, Dong-Hwan
    • Korean Journal of Materials Research
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    • v.9 no.2
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    • pp.173-180
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    • 1999
  • Thermally evaporated ZnTe films were investigated as a back contact material for CdS/CdTe solar cells. Two deposition methods, coevaporation and double-layer methods, were used for Cu doping in ZnTe films. ZnTe layers (0.2$\mu\textrm{m}$ thick) were deposited either on glass or on CdS/CdTe substrates without intentional heating of the substrates. Post-deposition annealing was performed at 200,300 and $400^{\circ}C$ for 3,6 and 9 minutes, respectively. Band gap of 2.2eV was measured for both undoped and doped films and a slight change in the shape of absorption spectra was observed in Cu-doped samples after annealing at $400^{\circ}C$. The resistivity of as-deposited ZnTe decreased from 10\ulcorner~10\ulcornerΩcm down to 10\ulcornerΩcm as Cu concentration increased from 0 to 14 at.%. There was not a noticeable change in less of annealing temperature up to $300^{\circ}C$ whereas films annealed at $400^{\circ}C$ revealed hexagonal (101) orientations as well. Some of Cu-doped ZnTe revealed x-ray diffraction (XRD) peaks related with Cu\ulcornerTe(x=1.75~2). Grain growth was observed from about 20nm in as-deposited films to 50nm after annealing at $400^{\circ}C$ by scanning electron microscopy (SEM). Cu distribution in ZnTe films was not uniform according to Auger electron spectroscopy (AES) measurements.

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Structural and Magnetic Properties of Fe Doped CuO (Fe 첨가된 CuO의 구조적, 자기적 특성)

  • Park, Young-Ran;Kim, Kwang-Joo;Park, Jae-Yun;Ahn, Geun-Young;Kim, Chul-Sung
    • Journal of the Korean Magnetics Society
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    • v.16 no.1
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    • pp.34-39
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    • 2006
  • Pure and Fe-doped CuO thin-film and powder samples were prepared using a sol-gel method. Undoped CuO films exhibited monoclinic structure and p-type electrical conductivity $(\~10^{-2}\;{\Omega^{-1}\;cm^{-1}$ due to copper deficiency. On the other hand, CuO: Fe films were found to be insulating and Li doping on the films led to a restoration of p-type conductivity and a ferromagnetic hysteresis behaviour at room temperature. The observed properties far the CuO : Fe, Li films can be explained in terms of hole creation by substitution of $Li^+$ for $Cu^{2+}$ sites and mediation of long-range interactions between $Fe^{3+}$ ions by the $Li^+$-induced defect states. CuO: Fe powders exhibited a ferromagnetism at room temperature with its strength being dependent on post-annealing temperature. Mossbauer measurements on the CuO: Fe films and powders revealed that the octahedral $Cu^{2+}$ sites are mostly substituted by $Fe^{3+}$ ions.