• 한국표면공학회지
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• 제32권3호
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• pp.433-439
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• 1999

In this study, the diffusion barrier properties of $1000\AA$ thick molybdenum compounds (Mox=1-5 Si) were investigated using sheet resistance measurements, X-ray diffractometry (XRD), and Rutherford back scattering spectrometry (RBS). Each barrier material was deposited by the de and rf magnetron co-sputtering of Mo and Si, respectively, and annealed at $500-700^{\circ}C$ for 30 min in vacuum. Each barrier material was failed at low temperatures due to Cu diffusion through grain boundaries and defects of barrier thin films or through the reaction of Cu with Si within Mo-barrier thin films. It was found that Mo rich thin films were less effective than Si rich films to Cu penetration activating Cu reaction with the substrate at a temperature higher than $500^{\circ}C$.

• 한국진공학회지
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• 제18권3호
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• pp.203-207
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• 2009

반도체 공정에서 기존 금속배선으로 사용되던 Al을 대체하여 사용되는 금속배선으로는 Cu가 그 대안으로 인식되고 있다. 이는 비저항값이 Al ($2.66{\mu}{\Omega}$-cm)보다 Cu ($1.67{\mu}{\Omega}$-cm)가 더 작아 RC 지연 시간 (RC delay time)을 극복하기 때문이다. 그러나 Cu의 녹는점은 $1085^{\circ}C$로 높지만 저온에서 쉽게 Si기판과 반응하는 특성을 가지고 있고, 또한 Si과의 접착력이 좋이 않는 것으로 알려져 있다. 이러한 이유로 Cu와 Si과의 반응을 방지하고 접착력을 높이기 위하여 확산방지막의 연구가 꾸준히 진행되고 있다. 본 연구그룹에서는 Cu의 확산을 방지하기 위하여 W-C-N의 확산방지막에 대하여 연구하여 왔다. 지금까지 보고된 연구 결과에 의하면 W-C-N (tungsten-carbon-nitrogen) 확산방지막은 고온에서도 Cu와 Si과의 확산을 효과적으로 방지하는 것으로 보고되었다. 이 논문에서는 W-C-N 확산방지막에 질소(N) 비율을 다르게 증착하여 지금까지 진행한 연구 결과를 기반으로 새로이 Cu의 전자거동현상(Electromigration)에 대하여 연구하였고, 고온 열처리 과정에서 박막의 표면강도 (Surface hardness)를 Nano-Indenter system을 이용하여 연구하였다. 이러한 연구를 통하여 박막내 질소가 포함된 W-C-N 확산방지막이 Cu의 전자거동에 더 안정적이며, 고온 열처리 과정에서도 표면 강도가 더 안정한 연구 결과를 획득하였다.

• 한국재료학회지
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• 제15권9호
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• pp.577-584
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• 2005

Thin Ni-B layer, $1{\mu}m$ thick, was electrolessly deposited on Cu electrode fabricated by electro-deposition. The purpose of the layer is to encapsulate Cu electrodes for preventing Cu oxidation and to serve as a diffusion barrier. The layers were annealed at $580^{\circ}C$ with and without pre-annealing at $300^{\circ}C$ for . 30minutes. In the layer with pre-annealing, the amount of Cu diffusion was lower about 5 times than the layer without pre-annealing. The difference in Cu concentration may be attributed to $Ni_3B$ formation prior to Cu diffusion. However, the difference in Cu concentration decreased during the annealing time of 5 h due to the grain growth of Ni.

• 한국재료학회지
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• 제16권10호
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• pp.614-618
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• 2006

The thermal stability of Cu/Ti(or Ta)/NiSi contacts was investigated. Ti(Ta)-capping layers deposited to form NiSi was utilized as the Cu diffusion barrier. Ti(Ta)/NiSi contacts was thermally stable upto $600^{\circ}C$. However when Cu/Ti(Ta)/NiSi contacts were furnace-annealed at $300{\sim}400^{\circ}C$ for 40 min., the Cu diffusion was found to be effectively suppressed, but NiSi was dissociated and then Ni diffused into the Cu layer to form Cu-Ni solutions. On the other hand, the Ni diffusion did not occur for the Al/Ti/NiSi system. The thermal instability of Cu/Ti(Ta)/NiSi contacts was attributed to the high heat of solution of Ni in Cu.

• 한국재료학회지
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• 제13권2호
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• pp.101-105
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• 2003

In this study, we have investigated the availability of the electroless Ni-B plating for a diffusion barrier of the bus electrode. The Ni-B layer of 1$\beta$: thick was electroless deposited on the electroplated Cu bus electrode for AC plasma display. The layer was to encapsulate Cu bus electrode to prevent from its oxidation and to serve as a diffusion barrier against Cu contamination of the transparent dielectric layer in AC plasma display. The microstructure of the as-plated barrier layer was made of an amorphous phase and the structure was converted to crystalline at about 30$0^{\circ}C$. The concentration of boron was about 5∼6 wt.% in the electroless Ni-B deposit regardless of DMAB concentration. The electroless Ni-B deposit was coated on the surface of the electroplated Cu bus electrode uniformly. And the electroless Ni-B plating was found to be an appropriate process to form the diffusion barrier.

• 한국재료학회지
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• 제5권2호
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• pp.169-177
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• 1995

Cu와 Si사이의 확산방지막으로 1000$\AA$ 두께의 TiN의 특성에 대하여 면저항 측정, 식각패임자국 관찰, X선 회절, AES, TEM 등을 이용하여 조사하였다. TiN 확산방지막은 $550^{\circ}C$, 1시간의 열처리 후에 Cu의 안쪽 확산으로 인해 Si(111)면을 따라 결정결함(전위)을 형성하고, 전위 주위에 Cu 실리사이드로 보이는 석출물들을 형성함으로써 파괴되었다. Al의 경우와는 달리 Si 패임자국이 형성되지 안흔 것으로부터 TiN확산방지막의 파괴는 Cu의 안쪽 확산에 의해서만 일어나는 것을 알 수 있었다. 또한, Al의 경우에는 우수한 확산방지막 특성을 보여주었던 충진처리된 TiN가 Cu의 경우에는 거의 효과가 없는 것을 알 수 있었다. 이것은 Al의 경우에는 TiN의 결정립계에 존재하는 $TiO_{2}$가 Al과 반응하여 $Al_{2}O_{3}$를 형성함으로써 Al의 확산을 방해하는 화학적 효과가 매우 크지만, Cu의 경우에는 CuO 또는 $Cu_{2}O$와 같은 Cu 산화물은$TiO_{2}$에 비해서 열역학적으로 불안정하기 때문에 이러한 화학적 효과를 기대할 수 없으며, 따라서 충진처리 효과가 거의 없는 것으로 이해된다.

• 한국재료학회지
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• 제14권8호
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• pp.552-557
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• 2004

Thin Ni-B films, 1 ${\mu}m$ thick, were electrolessly deposited on Cu bus electrode fabricated by electro deposition. The purpose of these films is to encapsulate Cu electrodes for preventing Cu oxidation and to serve as a diffusion barrier against copper contamination of dielectric layer in AC-plasma display panel. The layers were heat treated at $580^{\circ}C$(baking temperature of dielectric layer) with and without pre-annealing at $300^{\circ}C$($Ni_{3}B$ formation temperature) for 30 minutes. In the layer with pre-annealing, amount of Cu diffusion was lower about 5 times than that in the layer without pre-annealing. The difference of Cu concentration could be attributed to Cu diffusion before $Ni_{3}B$ formation at grain boundaries. However, the diffusion behavior of the layer with pre-annealing was similar to that of the layer without pre-annealing after $Ni_{3}B$ formation. With increasing annealing time, Cu concentration of both layers increased due to grain growth.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.229-229
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• 2010

With the scaling down of ultra large integrated circuits (ULSI) to the sub-50 nm technology node, the need for an ultra-thin, continuous and conformal diffusion barrier and Cu seed layer is increasing. However, diffusion barrier and Cu seed layer formation with a physical vapor deposition (PVD) method has become difficult as the technology node is reduced to 30 nm and beyond. Recent work on self-forming barrier processes using PVD Cu alloys have attracted great attention due to the capability of conformal ultra-thin barrier formation using a simple technique. However, as in the case of the conventional barrier and Cu seed layer, PVD of the Cu alloy seed layer will eventually encounter the difficulty in conformal deposition in narrow line trenches and via holes. Atomic layer deposition (ALD) has been known for its good step coverage and precise thickness control, and is a candidate technique for the formation of a thin conformal barrier layer and Cu seed layer. Conformal Cu-Mn seed layers were deposited by plasma enhanced atomic layer deposition (PEALD) at low temperature ($120^{\circ}C$), and the Mn content in the Cu-Mn alloys were controlled form 0 to approximately 10 atomic percent with various Mn precursor feeding times. Resistivity of the Cu-Mn alloy films decreased by annealing due to out-diffusion of Mn atoms. Out-diffused Mn atoms were segregated to the surface of the film and interface between a Cu-Mn alloy and $SiO_2$, resulting in self-formed $MnO_x$ and $MnSi_xO_y$, respectively. No inter-diffusion was observed between Cu and $SiO_2$ after annealing at $500^{\circ}C$ for 12 h, indicating an excellent diffusion barrier property of the $MnSi_xO_y$. The adhesion between Cu and $SiO_2$ was enhanced by the formation of $MnSi_xO_y$. Continuous and conductive Cu-Mn seed layers were deposited with PEALD into 32 nm $SiO_2$ trench, enabling a low temperature process, and the trench was perfectly filled using electrochemical plating (ECD) under conventional conditions. Thus, it is the resultant self-forming barrier process with PEALD Cu-Mn alloy film as a seed layer for plating Cu that has further potential to meet the requirement of the smaller than 30 nm node.

• 한국재료학회:학술대회논문집
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• 한국재료학회 1997년도 한국재료학회 춘계학술발표회
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• pp.19-19
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• 1997

• 한국진공학회지
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• 제5권2호
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• pp.147-155
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• 1996

Optical properties of $TiO_2/M/Ag/M/TiO_2$ films have been changed with the diffusion barrier metal M. Optimum opticla properties of $TiO_2/M/Ag/M/TiO_2$ as the transparent heat mirror film, could be obtained with Ti among diffusion barrier metals of Ti, Cu, Zr and Al. $TiO_2/M/Ag/M/TiO_2$ film, which was fabricated by sputtering of 18 nm-thick $TiO_2$ and Ag, and 4nm-thick Ti, showed maximum transimittance of 89% at visible wavelength and infrared reflectance of 97% at wavelength of 3000 nm. Optical properties of this film was not degraded by Xenon-sunshine weather test for 240 hours. For specimens with barrier layers of Cu, Zr, and Al, degradation of optical properties by weather test was increased in a sequence of films with Cu, Zr, and Al barrier layers.