• Journal of the Korean Vacuum Society
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• v.17 no.2
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• pp.109-112
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• 2008

The miniaturization of device size and submicron process causes serious problems in conventional metallization due to the solubility of silicon and metal at the interface, such as an increasing contact resistance in the contact hole and interdiffusion between metal and silicon. Moreover, the interaction between Cu and Si is so strong and detrimental to the electrical performance of Si even at temperatures below $200^{\circ}C$. Therefore it is necessary to implement a barrier layer between Cu and Si. So we study W-C-N diffusion barrier for prevent Cu diffusion as a function of $N_2$ gas flow and thermal stability. Especially, we also study the W-C-N diffusion barrier for analyzing the change of lattice constants.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.49 no.4
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• pp.210-218
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• 2000

For the fabrication of $YBa_2Cu_3O_x$ thick film, a substrate of $Y_2BaCuO_5$ was fabricated by adding $CeO_2$ into $Y_2BaCuO_5$ and two types of doping materials added with binder material were prepared. Each doping material was patterned on $Y_2BaCuO_5$substrate by the screen printing method and then was annealed at the temperature with a few step. It could be observed by X-ray diffraction patterns and SEM photographs that through the diffusion process of the $Y_2BaCuO_5$ and each doping material, the $YBa_2Cu_3O_x$ phase was formed. And with n additive of $CeO_2$ the thickness of formed $YBa_2Cu_3O_x$decreased. From the experiment of current limiting on thick film, the sample with thiner thickness of $YBa_2Cu_3O_x$ showed the more effective characteristics of current limiting.

• Journal of the Korean institute of surface engineering
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• v.38 no.1
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• pp.28-36
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• 2005

In this study, the reflow characteristics of copper thin films which is expected to be used as interconnection materials in the next generation semiconductor devices were investigated. Cu thin films were deposited on the TaN diffusion barrier by metal organic chemical vapor deposition (MOCVD) and annealed at the temperature between 250℃ and 550℃ in various ambient gases. When the Cu thin films were annealed in the hydrogen ambience compared with oxygen ambience, sheet resistance of Cu thin films decreased and the breakdown of TaN diffusion barrier was not occurred and a stable Cu/TaN/Si structure was formed at the annealing temperature of 450℃. In addition, reflow properties of Cu thin films could be enhanced in H₂ ambient. With Cu reflow process, we could fill the trench patterns of 0.16～0.24 11m with aspect ratio of 4.17～6.25 at the annealing temperature of 450℃ in hydrogen ambience. It is expected that Cu reflow process will be applied to fill the deep pattern with ultra fine structure in metallization.

• Korean Journal of Materials Research
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• v.17 no.12
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• pp.664-668
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• 2007

The magnetron sputtering was used to deposit Ni buffer layers on the polyimide surfaces to increase the adhesion strength between Cu thin films and polyimide as well as to prevent Cu diffusion into the polyimide. The Ni layer thickness was varied from 100 to $400{\AA}$. The adhesion strength increased rather significantly up to $200{\AA}$ of Ni thickness, however, there was no significant increase in strength over $200{\AA}$. The XPS analysis revealed that Ni thin films could increase the adhesion strength by reacting with the polar C=O bonds on the polyimide surface and also it could prevent Cu diffusion into the polyimide. The Cu/Ni/ polyimide multilayer thin films showed a high stability even at the high heating temperature of $200^{\circ}C$, however, at the temperature of $300^{\circ}C$, Cu diffused through the Ni buffer layer into polyimide, resulting in the drastic decrease in adhesion strength.

• Korean Journal of Materials Research
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• v.13 no.2
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• pp.101-105
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• 2003

In this study, we have investigated the availability of the electroless Ni-B plating for a diffusion barrier of the bus electrode. The Ni-B layer of 1$\beta$: thick was electroless deposited on the electroplated Cu bus electrode for AC plasma display. The layer was to encapsulate Cu bus electrode to prevent from its oxidation and to serve as a diffusion barrier against Cu contamination of the transparent dielectric layer in AC plasma display. The microstructure of the as-plated barrier layer was made of an amorphous phase and the structure was converted to crystalline at about 30$0^{\circ}C$. The concentration of boron was about 5∼6 wt.% in the electroless Ni-B deposit regardless of DMAB concentration. The electroless Ni-B deposit was coated on the surface of the electroplated Cu bus electrode uniformly. And the electroless Ni-B plating was found to be an appropriate process to form the diffusion barrier.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.188-188
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• 2011

Recently, scaling down of ULSI (Ultra Large Scale Integration) circuit of CMOS (Complementary Meta Oxide Semiconductor) based electronic devices, the electronic devices, become much faster and smaller size that are promising property of semiconductor market. However, very narrow interconnect line width has some disadvantages. Deposition of conformal and thin barrier is not easy. And metallization process needs deposition of diffusion barrier and glue layer for EP/ELP deposition. Thus, there is not enough space for copper filling process. In order to get over these negative effects, simple process of copper metallization is important. In this study, Cu-V alloy layer was deposited using of DC/RF magnetron sputter deposition system. Cu-V alloy film was deposited on the plane SiO2/Si bi-layer substrate with smooth surface. Cu-V film's thickness was about 50 nm. Cu-V alloy film deposited at $150^{\circ}C$. XRD, AFM, Hall measurement system, and AES were used to analyze this work. For the barrier formation, annealing temperature was 300, 400, $500^{\circ}C$ (1 hour). Barrier thermal stability was tested by I-V(leakage current) and XRD analysis after 300, 500, $700^{\circ}C$ (12 hour) annealing. With this research, over $500^{\circ}C$ annealed barrier has large leakage current. However vanadium-based diffusion barrier annealed at $400^{\circ}C$ has good thermal stability. Therefore thermal stability of vanadium-based diffusion barrier is desirable for copper interconnection.

• Journal of Korean Society of Water and Wastewater
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• v.33 no.3
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• pp.205-213
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• 2019

Batch adsorption tests were performed to evaluate the applicability of adsorption kinetic model by using hydrogel chitosan bead crosslinked with glutaraldehyde (HCB-G) for Cu(II) as cation and/or phosphate as anion. Pseudo first and second order model were applied to determine the sorption kinetic property and intraparticle and Boyd equation were used to predict the diffusion of Cu(II) and phosphate at pore and boundary-layer, respectively. According to the value of theoretical and experimental uptake of Cu(II) and phosphate, pseudo second order is more suitable. On comparison with the value of adsorption rate constant (k), phosphate kinetic was 2-4 times faster than that of Cu(II) at any experimental condition indicating the electrostatic interaction between ${NH_3}^+$ and phosphate is dominated at the presence of single component. However, when Cu(II) and phosphate simultaneously exist, the value of k for phosphate was sharply decreased and then the difference was not significant. Both diffusion models confirmed that the sorption rate was controlled by film mass transfer at the beginning time (t < 3 hr) and pore diffusion at next time section (t > 6 hr).

• Journal of the Korean Vacuum Society
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• v.9 no.3
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• pp.267-272
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• 2000

Electroplating Cu was deposited on Si(100) wafer after seed Cu was deposited by sputtering first. TaN was deposited as a diffusion barrier before depositing the seed Cu. Electroplating Cu thin films show highly (111)-oriented microstructure for both before and after annealing at $450^{\circ}C$ for 30min and no copper silicide was detected in the same samples, which indicates that TaN barrier layer blocks well the Cu diffusion into silicon substrate. After annealing the electroplating Cu film up to $450^{\circ}C$, the Cu film became columnar from non-columnar, its grain size became larger about two times, and also defects density of stacking faults, twins and dislocations decreased greatly. Thus the heat treatment will improve significantly electromigration property caused by the grain boundary in the Cu thin films.

• Journal of the Korean Magnetics Society
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• v.16 no.1
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• pp.75-78
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• 2006

In case of contacts between semiconductor and metal in semiconductor circuits, they become unstable because of thermal budget. To prevent these problems, we use diffusion barrier that has a good thermal stability between metal and semiconductor. So we consider the diffusion barrier to prevent the increase of contact resistance between the interfaces of metals and semiconductors, and the increase of resistance and the reaction between the interfaces. In this paper we deposited tungsten boron carbon nitride (W-B-C-N) thin film on silicon substrate. The impurities of the $1000\;{\AA}-thick$ W-B-C-N thin films provide stuffing effect for preventing the inter-diffusion between metal thin films $(Cu-2000\;{\AA})$ and silicon during the high temperature $(700\~1000^{\circ}C)$ annealing process.

• Journal of the Korean institute of surface engineering
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• v.29 no.4
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• pp.278-285
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• 1996

The structure of coating layer formed by hot dip Al-Cu alloy coating on Monel 1400 metal was studied. The coating layer consists of alloyed layer adjacent to the Monel 400 substrate and Al-Cu alloy. It was found that the hardness of coating increased with dipping time and heat treatment associated with the diffusion and the formation of intermetallic compound at the interface. However the thickness of coating layer was decreased at high dipping temperature due to tile higher viscosity of liquid coating alloy. Diffusion heat treatment at $600^{\circ}C$ after coating resulted in the disappearence of adhered Al(Cu) and $CuAl_2$ phases, and then they transformed into the new phases of CuAl and Al7Cu4Ni at coating layer.