• The Transactions of The Korean Institute of Electrical Engineers
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• v.58 no.8
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• pp.1559-1565
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• 2009

Resistivity changes and intermetallic growth after thermal aging of Matter tin-plated copper sheet for current collector in fuel cell were investigated to survey the diffusion of Cu into Sn in interface and surface. The results show that the intermetallic growth and resistivity depended on thermal aging temperature and dwell time. In Sn plate on a Cu substrate, Cu6Sn5(${\mu}$) and Cu3Sn(${\varepsilon}$) intermetallics layer were formed at plate/substrate interface. Cu6Sn5(${\mu}$) intermetallics layer gradually changed Cu3Sn(${\varepsilon}$). Moreover Cu get through Sn layer and it was diffused in the surface at $200^{\circ}C$. On the other hand, only Cu3Sn(${\varepsilon}$) intermetallics layer were formed at plate/substrate interface at $300^{\circ}C$. Consequently, the intermetallics formation, thermal condition and oxidation of surface, causes increase in the resistivity of Tin-plated copper sheet.

• Korean Journal of Metals and Materials
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• v.49 no.12
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• pp.950-955
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• 2011

In the present study, the formation of hollow Cu oxide nanoparticles through the oxidation process at temperatures from 200 to $300^{\circ}C$ has been studied by transmission electron microscopy with Cu nanoparticles produced by the plasma arc discharge method. The Cu nanoparticles had a thin oxide layer on the surface at room temperature and the thickness of this oxide layer increased during oxidation in atmosphere at $200-300^{\circ}C$ However, the oxide layer consisted of $Cu_2O$ and CuO after oxidation at $200^{\circ}C$ whereas this layer was comprised of only CuO after oxidation at $300^{\circ}C$ On the other hand, hollow Cu oxide nanoparticles are obtained as a result of vacancy aggregation in the oxidation processes, resulting from the rapid outward diffusion of metal ions through the oxide layer during the oxidation process.

• Analytical Science and Technology
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• v.13 no.5
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• pp.558-564
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• 2000

Mononuclear schiff base ligand N,N'-bissalicylidene-1,2-phenylenediamine(BSPD) and binuclear schiff base ligands N,N',N',N'''-tetrasalicylidene-3,3',4,4'-tetraaminodiphenyl-methane (TSTM), N,N',N'',N'''-tetrasalicylidene-3,3'-diaminobenzidine (TSDB) have been synthesized. Proton dissociation constants of the ligands were determined by potentiometric method. The synthesized ligands and complexes formed with Cu(II) ion. These complexes were investigated by cyclic voltammetry and differential pulse voltammetry. The results revealed two step diffusion controlled redox process. The mononuclear complex Cu(II)-BSPD and binuclear complexes $Cu(II)_2$-TSDB and $Cu(II)_2$-TSTM were used in the oxidation reaction of ascorbic acid. The reaction rates were in the order of $Cu(II)_2$-TSTM>$Cu(II)_2$-TSDB>Cu(II)-BSPD, indicating that the binuclear $Cu(II)_2$-TSTM complex had the fastest values.

• Journal of the Microelectronics and Packaging Society
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• v.19 no.1
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• pp.67-73
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• 2012

After flash memory card(FMC) was manufactured by $B^2it$ process, interfacial reaction of silver bump with thermal stress was studied. To investigate bonding reliability of Ag bump, thermal shock and thermal stress tests were conducted and then examined on the crack between Cu land and Ag bump interface. Diffusion reaction of Ag bump/Cu land interface was analyzed using SEM, EDS and FIB. The Ag-Cu alloy layer due to the interfacial reaction was formed at the Ag/Cu interface. As the diffusivity of Ag ${\rightarrow}$ Cu is faster than Cu ${\rightarrow}$ Ag, a lot of (Cu, Ag) alloy layers were observed at the Cu layer than Ag. These alloy layers contributed to increase the Cu-Ag bonding strength and its reliability.

• Progress in Superconductivity and Cryogenics
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• v.5 no.2
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• pp.66-70
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• 2003

Transient magnetic diffusion process in a melt-cast Bi2Sr2CaCu20X(Bi-2212) tube was studied by experimental and numerical analyses. The transient diffusion partial differential equation is transformed into an ordinary differential equation by integral method. The penetration depth of magnetic field into a superconducting tube is obtained by solving the differential equation numerically. The results show that the penetration depth as a function of time which is somewhat different from the results by Bean's critical state model. The reason of the difference between the present results and that of Bean's model is discussed and compared in this paper. This experiment measure the magnetic flux density in the supercondutor after supply direct-current of Bi-2212 rounded by copper coil. This study was discussed of valid of a previous numerical solution which is compared by the penetrate time and the magnetic flux density difference of between the present results and the numerical solution.

• Journal of the Korean institute of surface engineering
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• v.16 no.3
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• pp.98-107
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• 1983

A study on the improvement of wear resistance of brasses by electroplating and diffusion treatment of tin was carried out. The optimum condition of the treatment obtained was as follows. Plating thickness of tin : 5 - 9 $\mu\textrm{m}$ Condition of diffusion treatment : atmosphere ; fused nitrate bath (KNO3 + NaNO3) temperature and time ; 1st step 320$^{\circ}C$, 60min. and 450$^{\circ}C$, 30min. During the diffusion treatment, internetallic compounds of Cu-Sn were formed and these compounds were identified as η, $\varepsilon$ and $\delta$ phase from the outer tin layer. It was considered that the improvement of wear resistance of brasses by the treatment is because of the formation of intemetallic compounds particalarly $\varepsilon$phase which is very hard, between soft tin layer brass.

• Journal of the Korean Magnetics Society
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• v.13 no.3
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• pp.109-114
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• 2003

The purpose of this study Is to investigate the effect of $V_2$O$_{5}$ addition on the microstructures and magnetic properties of 7.7${\times}$4.5${\times}$1.0 mm sized multi-layer chip inductors prepared by the screen printing method using 0∼0.5 wt％ $V_2O_{5}$-doped NiCuZn ferrite pastes. With increasing the $V_2O_{5}$ content, the exaggerated grain growth of ferrite layers was developed due to the promotion of Ag diffusion and Cu segregation into the grain boundaries oi ferrites, which affected significantly the magnetic properties of the chip inductors. After sintering at $900^{\circ}C$, the inductance at 10 MHZ of the 0.5 wt％ $V_2O_{5}$-doped chip inductor was 3.7 ${\mu}$H less than 4.2 ${\mu}$H of the 0.3 wt% $V_2O_{5}$-doped one, which was thought to be caused by the residual stress at the ferrite layers increased with the promotion of Ag diffusion and Cu segregation. The quality factor of the 0.5 wt% $V_2O_{5}$-doped chip inductor decreased with increasing the sintering temperature, which was considered to be caused by the electrical resistivity of the ferrite layer decreased with the promotion of Ag/cu segregation at the grain boundaries and the growth of the mean grain size of ferrite due to exaggerated grain growth of ferrite layers.

• Journal of the Korean Vacuum Society
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• v.6 no.2
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• pp.143-150
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• 1997

In this study, doffusion barrier properties of 1000 $\AA$ thick molybdenum compound(Mo, Mo-N, $MoSi_2$, Mo-Si-N) films were investigated using sheet resistance measurement, X-ray diffraction(XRD), X-ray photoelectron spectroscopy(XPS), Scanning electron mircoscopy(SEM), and Rutherford back-scattering spectrometry(RBS). Each barrier material was deposited by the dc magnetron sputtering and annealed at 300-$800^{\circ}C$ for 30 min in vacuum. Mo and MoSi2 barrier were faied at low temperatures due to Cu diffusion through grain boundaries and defects in Mo thin film and the reaction of Cu with Si within $MoSi_2$, respectively. A failure temperature could be raised to $650^{\circ}C$-30 min in the Mo barrier system and to $700^{\circ}C$-30 min in the Mo-silicide system by replacing Mo and $MoSi_2$ with Mo-N and Mo-Si-N, respectively. The crystallization temperature in the Mo-silicide film was raised by the addition of $N_2$. It is considered that not only the $N_2$, stuffing effect but also the variation of crystallization temperature affects the reaction of Cu with Si within Mo-silicide. It is found that Mo-Si-N is the more effective barrier than Mo, $MoSi_2$, or Mo-N to copper penetraion preventing Cu reaction with the substrate for $30^{\circ}C$min at a temperature higher than $650^{\circ}C$.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.215-215
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• 2012

Sillicon Wafer는 순도 99.9999999%의 단결정 규소를 사용하여 만들어진다. 웨이퍼의 표면은 결함이나 오염이 없어야 하고 회로의 정밀도에 영향을 미치기 때문에 고도의 평탄도와 정밀도를 요구한다. 특히 실리콘의 순도는 효율성에 영향을 주는 주요 원인으로 금속의 오염은 실리콘 웨이퍼의 수명을 단축시켜 효율성을 떨어뜨린다. 표면에 흡착된 구리와 니켈은 Silicon 오염의 주요인 중 하나로 알려져 있다. 이 연구는 Silicon Wafer 표면에 흡착된 구리가 내부로 확산되는 메커니즘을 규명하는 것을 목표로 한다. 표면에 구리가 흡착된 상태는 AES 및 LEED로 관찰하였다. 표면에 흡착된 구리의 표면(수평)및 내부(수직)확산은 SIMS를 이용하여 연구하였다.

• Proceedings of the Korean Vacuum Society Conference
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• 2009.08a
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• pp.221-221
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• 2009