• Journal of the Semiconductor & Display Technology
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• v.2 no.2
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• pp.5-8
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• 2003

In this study, as Cu diffusion barrier, tantalum nitrides were successfully deposited on Si(100) substrate and $SiO_2$ by plasma assisted atomic layer deposition(PAALD) and thermal ALD, using pentakis (ethylmethlyamino) tantalum (PEMAT) and NH$_3$ as precursors. The TaN films were deposited at $250^{\circ}C$ by both method. The growth rates of TaN films were 0.8${\AA}$/cycle for PAALD and 0.75${\AA}$/cycle for thermal ALD. TaN films by PAALD showed good surface morphology and excellent step coverage for the trench with an aspect ratio of h/w -1.8:0.12 mm but TaN films by thermal ALD showed bad step coverage for the same trench. The density for PAALD TaN was 11g/cmand one for thermal ALD TaN was 8.3g/$cm^3$. TaN films had 3 atomic % carbon impurity and 4 atomic % oxygen impurity for PAALD and 12 atomic % carbon impurity and 9 atomic % oxygen impurity for thermal ALD. The barrier failure for Cu(200 nm)/TaN(10 nm)/$SiO_2$(85 nm)/ Si structure was shown at temperature above $700^{\circ}C$ by XRD, Cu etch pit analysis.

• Bulletin of the Korean Chemical Society
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• v.18 no.8
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• pp.850-856
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• 1997

A series of tetradentate Schiff-base ligands; 1,3-bis(salicylideneimino) propane, 1,4-bis(salicylideneimino)butane, and 1,5-bis(salicylideneimino)pentane, and their Cu(Ⅱ) and Ni(Ⅱ) complexes have been synthesized. The properties of ligands and complexes have been characterized by elemental analysis, IR, NMR, UV-Vis spectra, molar conductance, and thermogravimetric anaylsis. The mole ratio of Schiff base to metal at complexes was found to be 1 : 1. All complexes were four-coordinated configuration and non-ionic compound. The electrochemical redox processes of the ligands and their complexes in DMF solution containing 0.1 M TEAP as supporting electrolyte have been investigated by cyclic voltammetry, chronoamperometry, differential pulse voltammetry at glassy carbon electrode, and by controlled potential coulometry at platinum gauze electrode. The redox process of the ligands was highly irreversible, whereas redox process of Cu(Ⅱ) and Ni(Ⅱ) complexes was observed as one electron transfer process of quasi-reversible and diffusion-controlled reaction. Also the electrochemical redox potentials of complexes were affected by chelate ring size of ligands. The diffusion coefficients of Cu(Ⅱ) and Ni(Ⅱ) complexes in DMF solution were determined to be 4.2-6.6×10-6 cm2/sec. Also the exchange rate constants were determined to be 3.6-9.7×10-2 cm/sec.

• Journal of the Korean Vacuum Society
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• v.16 no.5
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• pp.348-352
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• 2007

In submicron processes, the feature size of ULSI devices is critical, and it is necessary both to reduce the RC time delay for device speed performance and to enable higher current densities without electromigration. In case of contacts between semiconductor and metal in semiconductor devices, it may be very unstable during the thermal annealing process. To prevent these problems, we deposited tungsten carbon nitride (W-C-N) ternary compound thin film as a diffusion barrier for preventing the interdiffusion between metal and semiconductor. The thickness of W-C-N thin film is $1,000{\AA}$ and the process pressure is 7mTorr during the deposition of thin film. In this work we studied the interface effects W-C-N diffusion barrier using the XRD and 4-point probe.

• Applied Chemistry for Engineering
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• v.10 no.2
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• pp.268-274
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• 1999

The chitosan solution was prepared by dissolving chitosan into 2 wt % aqueous acetic acid solution and then chitosan beads were made by sol-gel method. The average molecular weight and the degree of deacetylation of the chitosan used here were determined to be $8.2{\times}10^5$ and 85%, respectively. chitosan beads were highly porous which was confirmed by SEM photography and BET. Adsorption equilibrium of $Cu^{2+}$ on porous chitosan beads could be represented by Sips equation. The diffusion of cupric ions in the chitosan beads could be explained by pore and surface diffusion mechanisms. Adsorption dynamics of $Cu^{2+}$ in fixed-bed could be simulated by linear driving force approximation (LDFA). It was proven that porous chitosan beads manufactured in this work are good adsorbents for the removal of $Cu^{2+}$.

• Bulletin of the Korean Chemical Society
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• v.30 no.7
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• pp.1470-1474
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• 2009

Thermal and photochemistry of methyl iodide ($CH_3I)\;adsorbed\;on\;D_2O$ ice film on Cu(111) at 100 K were studied using temperature-programmed desorption (TPD) time-of-flight mass spectrometry (TOF-MS), X-ray and ultraviolet photoelectron spectroscopies. On the basis of TPD, multilayer and monolayer $CH_3I$ molecules desorb from $D_2O$ ice layer at 120 and 130 K, respectively. Photo-irradiation at 100 K exhibits dramatic changes in the TPD and I $3d_{5/2}\;XPS\;of\;CH_3I$ on ice film, due to a dramatic dissociation of $CH_3I$. The dissociation is likely activated by solvated electrons transferred from the metal substrate during photo-irradiation. No other photo-initiated reaction products were found within our instrumental detection limit. During photo-irradiation, the $CH_3I$, $CH_3$ and I could be trapped (or solvated) in ice film by rearrangement (and self-diffusion) of water molecules. A newly appeared parent molecular desorption peak at 145 K is attributed to trapped $CH_3I$. In addition, the $CH_3$ and I may diffuse through ice and chemisorb on Cu(111), indicated by TPD and I $d_{5/2}$ XPS taken with photo-irradiation time, respectively. No molecular ejection was found during photo-irradiation at 100 K. The work functions for $CH_3I/Cu(111),\;D_2O/Cu(111)\;and\;CH_3I/D_2$O/Cu(111) were all measured to be about 3.9 eV, 1.0 eV downward shift from that of clean Cu(111).

• Proceedings of the Materials Research Society of Korea Conference
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• 1997.05a
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• pp.20-20
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• 1997

• Proceedings of the Materials Research Society of Korea Conference
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• 1998.11a
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• pp.124-124
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• 1998

• Journal of the Korean Society for Heat Treatment
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• v.6 no.1
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• pp.17-25
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• 1993

The Cu - $Nb_3Sn$ composites wire as a superconducting material was prepared by in situ method as follow: Cu - 15wt.% Nb alloys which were melted in a high -frequency induction furnace and casted in bar were cold-worked up to the final diameter of 0.24 mm, electroplated with Sn, pre-treated in two steps and then diffused at $550{\sim}650^{\circ}C$ for 24 ~ 96 hrs. The overall $J_c$ and $T_c$ of the specimens were measured by the four point-probe method at 10 K in the magnetic field of 0 Tesla. The overall $J_c$ of the composites wire which diffused at $550^{\circ}C$ after pre-treating in two steps were generally higher than those of the wire at either $600^{\circ}C$ or $650^{\circ}C$. For the specimens diffused at $550^{\circ}C$, the overall $J_c$ were increased until 72 hrs. of diffusion time and then decreased. However, in case of diffusion at $600^{\circ}C$ and $650^{\circ}C$, the overall $J_c$ were gradually decreased from the beginning. The maximum overall $J_c$ obtained in this experiment was $1.3{\times}10^4\;A/cm^2$, which was measured for the specimen diffused at $550^{\circ}C$ for 72 hrs. When the specimens were diffused at $550^{\circ}C$ for 72 hrs, after pre-treating, the measured critical temperature, $T_c$ was 16.19 K. Similar $T_c$ value were obtained in other specimens regardless of diffusion time and temperature.

• Current Photovoltaic Research
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• v.3 no.3
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• pp.85-90
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• 2015

Two-step processes for preparing $Cu(In,Ga)Se_2$ absorber layers consist of precursor layer formation and subsequent annealing in a Se-containing atmosphere. Among the various deposition methods for precursor layer, the nonvacuum (wet) processes have been spotlighted as alternatives to vacuum-based methods due to their potential to realize low-cost, scalable PV devices. However, due to its porous nature, the precursor layer deposited on Mo substrate by nonvacuum methods often suffers from thick $MoSe_2$ formation during selenization under a high Se vapor pressure. On the contrary, selenization under a low Se pressure to avoid $MoSe_2$ formation typically leads to low crystal quality of absorber films. Although TiN has been reported as a diffusion barrier against Se, the additional sputtering to deposit TiN layer may induce the complexity of fabrication process and nullify the advantages of nonvacuum deposition of absorber film. In this work, Mo oxide layers via thermal oxidation of Mo substrate have been explored as an alternative diffusion barrier. The morphology and phase evolution was examined as a function of oxidation temperature. The resulting Mo/Mo oxides double layers were employed as a back contact electrode for $CuInSe_2$ solar cells and were found to effectively suppress the formation of $MoSe_2$ layer.

• Journal of the Korean Magnetic Resonance Society
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• v.8 no.2
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• pp.86-95
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• 2004

A Cu(I) complex with an asymmetric TTF derivative (CET-EDTTTF) is prepared from the slow-diffusion method using CET-EDTTTF and Cu(I)Br solutions and characterized by X-ray crystallography and EPR spectroscopy. Structural analysis shows Cu(I) ions are tetrahedrally coordinated to two bridging bromides, one terminal bromide, and one S atom from CET-EDTTTF. Detailed geometrical and EPR analysis identified that the dimmer molecule contains [Cu$_2Br_4]^{2-}$ anion between two [CET-EDTTTF]$^+$ radical cations. Single-crystal EPR investigation of the complex reveals that the ganisotropy is unusually big, compared to those of the previously reported TTF+ cation radicals, implying that there is significant contribution of the Cu d-orbital to the HOMO of the complex.