• 제목/요약/키워드: Cu contact

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Mechanical and Antibacterial Properties of Copper-added Austenitic Stainless Steel (304L) by MIM

  • Nishiyabu, Kazuaki;Masai, Yoshikaze;Ishida, Masashi;Tanaka, Shigeo
    • Journal of Powder Materials
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    • v.9 no.4
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    • pp.227-234
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    • 2002
  • For the austenitic stainless steel (304L) manufactured by metal injection molding(MIM), the effects of copper content and sintering temperature on the mechanical properties, antibacterial activities, corrosion resistance, and electric resistances were investigated. The specimens were prepared by injection molding of the premixed powders of water-atomized 304 L and Cu with poly-acetyl binders. The green compacts were prepared with various copper contents from 0 to 10 wt.% Cu, which were debound thermally at 873 K for 7.2 ks in $N_2$gas atmosphere and subsequently sintered at various temperatures from 1323 K to 1623 K for 7.2 ks in Ar gas atmosphere. The relative density and tensile strength of the sintered compacts showed the minimum values at 5 and 8 wt.% Cu, respectively. Both the relative density and the tensile strength of the specimen with 10 wt.% Cu sintered at 1373 K showed the highest values, higher than those of copper-free specimen. Antibacterial activities investigated by the plastic film contact printing method for bacilli and the quantitative analysis of copper ion dissolved in water increased as the increase of the copper content to stainless steels. It was also verified by the measurement of pitting potential that the copper addition in 304 L could improve the corrosion resistance. Furthermore the electric conductivity increased with the increase of copper content.

Removal of Laser Damage in Electrode Formed by Plating in Crystalline Silicon Solar Cells (결정질 실리콘 태양전지에서 도금을 이용한 전극 형성 시 발생되는 레이저 손상 제거)

  • Jeong, Myeong Sang;Kang, Min Gu;Lee, Jeong In;Song, Hee-eun
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.29 no.6
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    • pp.370-375
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    • 2016
  • In this paper, we investigated the electrical properties of crystalline silicon solar cell fabricated with Ni/Cu/Ag plating. The laser process was used to ablate silicon nitride layer as well as to form the selective emitter. Phosphoric acid layer was spin-coated to prevent damage caused by laser and formed selective emitter during laser process. As a result, the contact resistance was decreased by lower sheet resistance in electrode region. Low sheet resistance was obtained by increasing laser current, but efficiency and open circuit voltage were decreased by damage on the wafer surface. KOH treatment was used to remove the laser damage on the silicon surface prior to metalization of the front electrode by Ni/Cu/Ag plating. Ni and Cu were plated for each 4 minutes and 16 minutes and very thin layer of Ag with $1{\mu}m$ thickness was plated onto Ni/Cu electrode for 30 seconds to prevent oxidation of the electrode. The silicon solar cells with KOH treatment showed the 0.2% improved efficiency compared to those without treatment.

Ion Beam-based Surface Modification of Polyimide Films for Adhesion Improvement with Deposited Metal Layer

  • Cho, Hwang-Woo;Jung, Chan-Hee;Hwang, In-Tae;Choi, Jae-Hak;Nho, Young-Chang
    • Journal of Radiation Industry
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    • v.4 no.4
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    • pp.335-339
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    • 2010
  • In this study, the surface of polyimide (PI) films was modified using ion implantation to enhance its adhesion to a deposited copper (Cu) layer. The surfaces of the PI films were implanted with 150 keV $Xe^+$ ions at fluences varying from $1{\times}10^{14}$ to $1{\time}10^{16}ions\;cm^{-2}$. The Cu layers were then deposited on the implanted PI. The surface properties of the implanted PI film were investigated based on the contact angle measurements, Fourier transform infrared spectroscopy (FT-IR), X-ray photoelectron spectroscopy (XPS), and atomic force microscopy (AFM). Furthermore, the adhesive strength between the deposited Cu layer and PI film was estimated through a scratch test using a nanoindenter. As a result, the surface environment of the PI film was changed by the ion implantation, which could have a significant effect on the adhesion between the deposited Cu layer and the PI.

Formation of Copper Electroplated Electrode Patterning Using Screen Printing for Silicon Solar Cell Transparent Electrode (실리콘 태양전지 투명전극용 스크린 프린팅을 이용한 구리 도금 전극 패터닝 형성)

  • Kim, Gyeong Min;Cho, Young Joon;Chang, Hyo Sik
    • Korean Journal of Materials Research
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    • v.29 no.4
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    • pp.228-232
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    • 2019
  • Copper electroplating and electrode patterning using a screen printer are applied instead of lithography for heterostructure with intrinsic thin layer(HIT) silicon solar cells. Samples are patterned on an indium tin oxide(ITO) layer using polymer resist printing. After polymer resist patterning, a Ni seed layer is deposited by sputtering. A Cu electrode is electroplated in a Cu bath consisting of $Cu_2SO_4$ and $H_2SO_4$ at a current density of $10mA/cm^2$. Copper electroplating electrodes using a screen printer are successfully implemented to a line width of about $80{\mu}m$. The contact resistance of the copper electrode is $0.89m{\Omega}{\cdot}cm^2$, measured using the transmission line method(TLM), and the sheet resistance of the copper electrode and ITO are $1{\Omega}/{\square}$ and $40{\Omega}/{\square}$, respectively. In this paper, a screen printer is used to form a solar cell electrode pattern, and a copper electrode is formed by electroplating instead of using a silver electrode to fabricate an efficient solar cell electrode at low cost.

Thiadiazole-thione surfactants: Preparation, flotation performance and adsorption mechanism to malachite

  • Huang, Yaoguo;Liu, Guangyi;Liu, Jun;Yang, Xianglin;Zhang, Zhiyong
    • Journal of Industrial and Engineering Chemistry
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    • v.67
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    • pp.99-108
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    • 2018
  • In this paper, novel thiadiazole-thione surfactants including 5-heptyl-1,3,4-thiadiazole-2-thione (HpSDT), 5-phenyl-1,3,4-thiadiazole-2-thione (PSDT) and 5-(2-hydroxyphenyl)-1,3,4-thiadiazole-2-thione (HPhSDT) were synthesized and originally introduced as collectors in froth flotation. Microflotation tests showed that HpSDT exhibited better flotation response to malachite than PSDT and HPhSDT, as well as excellent flotation selectivity against quartz. The contact angle results inferred that the hydrophobization intensity of these collectors toward malachite was in the order as HpSDT> PSDT> HPhSDT. ${\zeta}$-potential recommended a chemisorption of HpSDT on malachite surfaces. FTIR deduced that cupric or cuprous atoms might bond with the S and N atoms of HpSDT to form a conjugated ring. XPS further gave an additional evidence that HpSDT-Cu(I) complexes were produced on malachite surfaces via combining surface Cu atoms with HpSDT's N and S atoms, with reducing surface Cu(II) to Cu (I). The tighter orientation arrangement on malachite and stronger hydrophobicity rendered HpSDT to possess better flotation affinity toward malachite than PSDT and HPhSDT.

Effects of Sr Additions on the Interfacial Reaction Layers Formed between Liquid Al-Si-Cu Alloy and Cast Iron

  • Kyoung-Min Min;Je-Sik Shin;Jeong-Min Kim
    • Korean Journal of Materials Research
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    • v.33 no.9
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    • pp.353-359
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    • 2023
  • This study investigated the growth behavior and characteristics of compounds formed at the interface between a liquid Al-Si-Cu alloy and solid cast iron. Through microstructural analyses, it was observed that various AlFe and AlFeSi phases are formed at the interface, and the relative proportion of each phase changes when small amounts of strontium are added to the Al alloy. The results of the microstructural analysis indicate that the primary phases of the interfacial compounds in the Al-Si-Cu base alloy are Al8Fe2Si and Al4.5FeSi. However, in the Sr-added alloys, significant amounts of binary AlFe intermetallic compounds such as Al5Fe2 and Al13Fe4 formed, in addition to the AlFeSi phases. The inclusion of Sr has a slight diminishing effect on the rate at which the interfacial compounds layer thickens during the time the liquid Al alloy is in contact with the cast iron. The study also discusses the nano-indentation hardness and micro-hardness of the interfacial phases.

Structures and Magnetic Properties of Monomeric Copper(II) Bromide Complexes with a Pyridine-Containing Tridentate Schiff Base

  • Kang, Sung Kwon;Yong, Soon Jung;Song, Young-Kwang;Kim, Young-Inn
    • Bulletin of the Korean Chemical Society
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    • v.34 no.12
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    • pp.3615-3620
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    • 2013
  • Two novel copper(II) bromide complexes with pyridine containing Schiff base ligands, $Cu(pmed)Br_2$ and $Cu(pmed)Br_2$ where pmed = N'-((pyridin-2-yl)methylene)ethane-1,2-diamine (pmed) and dpmed = N,N-diethyl-N'-((pyridin-2-yl)methylene)ethane-1,2-diamine (dpmed) were synthesized and characterized using X-ray single crystal structure analysis, optical and magnetic susceptibility measurements. Crystal structural analysis of $Cu(pmed)Br_2$ showed that the copper(II) ion has a distorted square-pyramidal geometry with the trigonality index of ${\tau}=0.35$ and two intermolecular hydrogen bonds, which result in the formation of two dimensional networks in the ab plane. On the other hand, $Cu(pmed)Br_2$ displayed a near square-pyramidal geometry with the value of ${\tau}=0.06$. In both compounds, the NNN Schiff base and one Br atom occupy the basal plane, whereas the fifth apical position is occupied by the other Br atom at a greater Cu-Br apical distance. The reported complexes show $g_{\mid}$ > $g_{\perp}$ > 2.0023 with a $d_{x2-y2}$ ground state and a penta-coordinated square pyramidal geometry. Variable temperature magnetic susceptibility measurements showed that the developed copper(II) complexes follow the Curie-Weiss law, that is there are no magnetic interactions between the copper(II) ions since the Cu--Cu distance is too far for magnetic contact.

Ga Distribution in Cu(In,Ga)Se2 Thin Film Prepared by Selenization of Co-Sputtered Cu-In-Ga Precursor with Ga2Se3 Layer (Ga2Se3 층을 Cu-In-Ga 전구체 위에 적용하여 제조된 Cu(In,Ga)Se2 박막의 Ga 분포 변화 연구)

  • Jung, Gwang-Sun;Shin, Young-Min;Cho, Yang-Hwi;Yun, Jae-Ho;Ahn, Byung-Tae
    • Korean Journal of Materials Research
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    • v.20 no.8
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    • pp.434-438
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    • 2010
  • The selenization process has been a promising method for low-cost and large-scale production of high quality CIGS film. However, there is the problem that most Ga in the CIGS film segregates near the Mo back contact. So the solar cell behaves like a $CuInSe_2$ and lacks the increased open-circuit voltage. In this study we investigated the Ga distribution in CIGS films by using the $Ga_2Se_3$ layer. The $Ga_2Se_3$ layer was applied on the Cu-In-Ga metal layer to increase Ga content at the surface of CIGS films and to restrict Ga diffusion to the CIGS/Mo interface with Ga and Se bonding. The layer made by thermal evaporation was showed to an amorphous $Ga_2Se_3$ layer in the result of AES depth profile, XPS and XRD measurement. As the thickness of $Ga_2Se_3$ layer increased, a small-grained CIGS film was developed and phase seperation was showed using SEM and XRD respectively. Ga distributions in CIGS films were investigated by means of AES depth profile. As a result, the [Ga]/[In+Ga] ratio was 0.2 at the surface and 0.5 near the CIGS/Mo interface when the $Ga_2Se_3$ thickness was 220 nm, suggesting that the $Ga_2Se_3$ layer on the top of metal layer is one of the possible methods for Ga redistribution and open circuit voltage increase.

Densification Behavior of W-20wt.% Cu Composite Materials Fabricated by Mechanical Alloying Method (기계적합금화법에 의해 제조된 W-20wt.%Cu복합재의 치밀화 거동)

  • Kim, Bo-Su;An, In-Seop
    • Korean Journal of Materials Research
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    • v.5 no.6
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    • pp.627-632
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    • 1995
  • W-Cu composites utilize the high electrical conductivity of copper and arc erosion resistance of tungsten to provide properties better suited to electrical contact applications than either tungsten or copper alone. W-Cu composite materials were milled in an attritor with an impeller speed of 300rpm for various milling times. The milled powders were compacted at 300MPa into cylinders, 16m in diameter, and approximately 4m high. Sintering was performed in dry H$_2$at temperature ranging from 1200$^{\circ}C$ to 1400$^{\circ}C$. Samples were sectioned and were polished for scanning electron microscopy (SEM) of microstructures. Homogeneous W-Cu composites were formed after 10 hours mechanical alloying and could be attained 99% density at 1330$^{\circ}C$. As mechanical alloying time increased, Fe-concentration was increased linearly. Intermetallic compound formation interupted the growth of W particles Increased hardness.

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Characteristics of Cu and Cs Ions adsorbed on an immobilized Adsorbent including Zeolite Synthesized from Jeju Scoria (제주 스코리아로부터 합성한 제올라이트계 고정화 흡착제에 의한 Cu와 Cs 이온의 흡착 특성)

  • Lee, Chang-Han;Kam, Sang-Kyu;Lee, Min-Gyu
    • Journal of Environmental Science International
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    • v.28 no.1
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    • pp.55-64
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    • 2019
  • The adsorption properties of $Cs^+$ and $Cu^{2+}$ ions were evaluated by using a polysulfone scoria zeolite (PSf-SZ) composite with synthetic zeolite synthesized from Jeju volcanic rocks (scoria). In order to investigate the adsorption properties, various parameters, such as pH, contact time, reaction rate, concentration, and temperature in aqueous solutions, were evaluated by tests carried out in batch experiments. The adsorption capacities of $Cs^+$ and $Cu^{2+}$ ions increased between pH 2 but achieved equilibrium at pH 4 and above. The adsorption rate increased rapidly up to the initial 24 h, after which it plateaued ; the adsorption rate then sustained at equilibrium from 48 h. The adsorption kinetics of $Cs^+$ and $Cu^{2+}$ ions were described better by the pseudo-second-order kinetic model than the pseudo-first-order kinetic model. The Langmuir model fitted the adsorption isotherm data better than the Freundlich model. The maximum adsorption capacities of $Cs^+$ and $Cu^{2+}$ ions obtained from the Langmuir model were 53.8 mg/g and 84.7 mg/g, respectively. The calculated thermodynamic parameters showed that the adsorption of $Cs^+$ and $Cu^{2+}$ ions on PSf-SZ was feasible, spontaneous and endothermic reaction.