• Journal of Powder Materials
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• v.29 no.3
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• pp.226-232
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• 2022

In this study, a new manufacturing process for a multilayer-clad electrical contact material is suggested. A thin and dense BCuP-5 (Cu-15Ag-5P filler metal) coating layer is fabricated on a Ag plate using a high-velocity oxygen-fuel (HVOF) process. Subsequently, the microstructure and bonding properties of the HVOF BCuP-5 coating layer are evaluated. The thickness of the HVOF BCuP-5 coating layer is determined as 34.8 ㎛, and the surface fluctuation is measured as approximately 3.2 ㎛. The microstructure of the coating layer is composed of Cu, Ag, and Cu-Ag-Cu3P ternary eutectic phases, similar to the initial BCuP-5 powder feedstock. The average hardness of the coating layer is 154.6 HV, which is confirmed to be higher than that of the conventional BCuP-5 alloy. The pull-off strength of the Ag/BCup-5 layer is determined as 21.6 MPa. Thus, the possibility of manufacturing a multilayer-clad electrical contact material using the HVOF process is also discussed.

• Journal of Welding and Joining
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• v.23 no.1
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• pp.15-21
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• 2005

• Proceedings of the Materials Research Society of Korea Conference
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• 1998.08a
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• pp.96.2-96
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• 1998

• Korean Journal of Materials Research
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• v.15 no.5
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• pp.318-322
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• 2005

Ti-capped NiSi contacts were formed on $p^+/n$ junctions to improve the leakage problem and then Cu was deposited without removing the Ti-capping layer in an attempt to utilize as a diffusion barrier. The electrical characteristics of these $p^+/n$ diodes with Cu/Ti/NiSi electrodes were measured as a function of drive-in RTA(rapid-thermal annealing) and silicidation temperature and time. When drive-in annealed at $900^{\circ}C$, 10 sec. and silicided at $500^{\circ}C$, 100 sec., the diodes showed the most excellent I-V characteristics. Especially, the leakage current was $10^{-10}A$, much lower than reported data for diodes with NiSi contacts. However, when the $p^+/n$ diodes with Cu/Ti/NiSi contacts were furnace-annealed at $400^{\circ}C$ for 40 min., the leakage current increased by 4 orders. The FESEM and AES analysis revealed that the Ti-capping layer effectively prohibited the Cu diffusion, but was ineffective against the NiSi dissociation and consequent Ni diffusion.

• Journal of Environmental Science International
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• v.27 no.5
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• pp.299-308
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• 2018

The adsorption characteristics of Cu ions were studied using the zeolite Na-A synthesized from Jeju volcanic rocks. The effects of various operating parameters such as initial concentration of Cu ions, contact time, solution pH, and solution temperature were investigated in batch experiments. The adsorption of Cu ions by Na-A zeolite was fitted well by pseudo-second-order kinetics and the Langmuir isotherm model. The maximum adsorption capacity determined using the Langmuir isotherm model was 152.95 mg/g. In addition, the adsorption of Cu ions by zeolite Na-A was primarily controlled by particle diffusion model in comparison with the film diffusion model. As the temperature increased from 303 K to 323 K, ${\Delta}G^o$ decreased from -2.22 kJ/mol to -3.41 kJ/mol, indicating that the adsorption of Cu ions by Na-A zeolite is spontaneous process.

• Journal of the Korean Vacuum Society
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• v.5 no.4
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• pp.341-347
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• 1996

We fabricated the effective $Cu_2S$/CdS solar cells with large area by a spray pyrolysis method. In preparation process, we investigated the process parameters which directly influenced the efficiency of solar cell, such as the grid contact for electrodes, the temperature condition of CdS spray and the junction characteristics of $Cu_2S$ layer, by scanning electron microscope(SEM), x-ray diffraction(XRD) and temperature dependent optical absorption and photoconductivity. The $Cu_2S$/CdS solar cell with area of 1$\textrm{cm}^2$ showed the efficient of 3.15% under air mass 2(AM2) spectrum irradiation with 75mW/$\textrm{cm}^2$.

• Journal of the Korean institute of surface engineering
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• v.37 no.1
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• pp.5-12
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• 2004

The enhancement of adhesion for Cu film on polycarbonate (PC) surface with the $Ar/O_2$ gas plasma treatment and dc-bias sputtering was studied. The plasma treatment with this reactive mixture changes the chemical property of PC surface into hydrophllic one, which is shown by the variation of contact angle with surface modification. The micro surface roughness that also gives the high adhesive environment is increased by the $Ar/O_2$ gas plasma treatment. These results were observed distinctly from the atomic force microscopy (AFM). The negative substrate dc-bias effect for the Cu adhesion on PC was also investifated. Accelerated $Ar^{+}$ lons in sheath area of anode bombard the bare surface of PC during initial stage of dc bias sputtering. PC substrate. therefore, has severe roughen and hydrophilic surface due to the physical etching process with more activated functional group. As dc-bias sputtering process proceeds, morphology of Cu film shows better step coverage and dense layer. The results of peel test show the evidence of superiority of bias sputtering for the adhesion between metal Cu and PC.C.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2008.11a
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• pp.15-16
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• 2008

In case manufacturing COF, through hole should be made to be used for a pathway connecting the conductive layers of its both faces. In case Cu-plating inside of through hole with electroless plating way, contact between Cu and PI film gets bad to be fell apart from PI by the impact of applying to the electric devices. Therefore, after sputtering is applying on inner through hole, then a method to perform electroplating process. In this study, after changing sputtering condition to manufacture FCCL, we looked the changeability of the upper PI and inner hole Cu layers. Making use of RF Magnetron sputtering equipment, we coated Cu thin film and Cu-plated on it through electroplating. After cold-mounting the completed FCCL, we examined hole section through an optical microscope. From the result of test, with parameters deposition pressure and deposition time, both the thickness of the hole plated layer and PI plated upper layer increased at regular rate, increasing the thickness of Cu sputter layer. However, from the result of test in increasing RF-power, we could know the increment rate of hole plated layer is considerably greater than that of PI plated upper layer. Therefore, we finally acquired good result; if you want only to increase the plated layer of inner hole, it's much better to increase RF-power.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.42-43
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• 2005

본 연구에서는 Cu 슬러리에 부식방지제인 BTA를 첨가하여 슬러리내의 과수의 농도, pH 의 변화, 연마입자의 종류에 따라 연마거동에 미치는 영향과 각 chemical 변화에 따른 Cu surface의 변화를 살펴보았다. BTA (Benzotriazole, $C_6H_4C_3H$)를 첨가함으로써 본 연구에서 시행된 pH 와 과수의 변화에 상관없이 Cu-BTA film을 형성하여 Cu의 dissolution을 최대한 억제하는 것을 확인할 수 있었다. 또 그로인해 BTA를 첨가하지 않았을 때보다 얇은 passivation layer를 형성함을 알 수 있었고 contact angle도 더 높았다. 연마율의 경우에도 BTA가 첨가됨으로써 감소됨을 확인할 수 있었고 연마입자로 alumina particle을 사용한 경우에는 pH6, 과수 10vol%이상에서는 오히려 연마율이 증가하였다. fumed silica의 경우에는 hardness가 작아 mechanical적인 제거력이 낮아 BTA가 첨가되어도 연마율에는 큰 영향이 없었다.

• Journal of the Korean Vacuum Society
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• v.10 no.1
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• pp.37-43
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• 2001

Polyvinylidenefluoride and Polytetrafluoroethylene have been irradiated by 1 keV Ar+ ion beam in an $O_2$ environment. Hydrophilic functional groups (such as -(C-O)-,-(C=O)-,-(C=O)-O- and so on) were formed on fluoropolymers. Contact angles of water to PVDF were reduced from $75^{\circ}$ to $31^{\circ}$. Re-increase of contact angle was originated from carbonization phase in case of high dose irradiation above $1{\times}10^{16} Ar^+cm^2$. Contact angles to PTFE decreased at low dose irradiation and were exaggerated to about $140^{\circ}$ due to cone type surface at high dose irradiation. Hydrophilic functional groups have played an important role on adhesion between metal and fluoropolymers by acid-base interaction and chemical bond formation. Adhesion of Pt/PVDF was enhanced by acid-base interaction because Pt is inert metal. Chemical bond formation between Cu and PTFE could enlarge the adhesion strength of Cu/PTFE.