• Transactions of Materials Processing
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• v.23 no.7
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• pp.419-424
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• 2014

In order to improve efficiency, an outdoor unit using a refrigerant cooling method is designed into many air conditioner systems. The heat exchanger is composed of a Cu tube and an plate. The optimal design for the cold plate is very important because the efficiency of the heat transfer depends on the contact area between the Cu tube and the cold plate. The current study focused on the design of the cold plate to obtain a uniform contact between the Cu tube and the cold plate. Both FE(finite element) analysis and optimization were used in the design. The contact area between the tube and plate was predicted and improved by 16% through the press forming simulations. The springback after press forming was also reduced when the optimized design parameters were used. To verify the validity of the optimal cold plate design, a verification test was conducted. As a result, the performance of the heat exchanger improved by 34% when compared to benchmarked products.

• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 2000.04a
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• pp.112-118
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• 2000

Densification behavior of mixed copper and tool steel powder under cold compaction was investigated. By mixing the yield functions proposed by Fleck et al. and by Gurson for pure powder in terms of volume fractions and contact numbers of Cu powder new mixed yield functions were employed for densification of powder composites under cold compaction. The constitutive equations were implemented into a finite element program (ABAQUS) to compare with experimental data for densificatiojn of mixed powder under cold isostatic pressing and cold die compaction. finite element calculations by using the yield functions mixed by contact numbers of Cu powder agreed better with experimental data than those by volume fractions of Cu powder.

• Proceedings of the KSME Conference
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• 2000.04a
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• pp.393-398
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• 2000

Densification behavior of mixed copper and tool steel powder under cold compaction was investigated. By mixing the yield functions originally proposed by Fleck-Gurson for pure powder, a new mixed yield functions In terms of volume fractions and contact numbers of Cu powder were employed in the constitutive models. The constitutive equations were implemented into a finite element program (ABAQUS) to compare with experimental data. and with calculated results from the model of Kim et at. for densification of mixed powder under cold isostatic pressing and cold die compaction. Finite element calculations by using the yield functions mixed by contact numbers of Cu powder agreed better with experimental data than those by volume fractions of Cu powder.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.260-260
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• 2009

In high-efficiency crystalline silicon solar cell, If high-efficiency solar cells are to be commercialized, It is need to develop superior contact formation method and material that can be inexpensive and simple without degradation of the solar cells ability. For reason of plated metallic contact is not only high metallic purity but also inexpensive manufacture. It is available to apply mass production. Especially, Nickel, Copper are applied widely in various electronic manufactures as easily formation is available by plating. Ni is shown to be a suitable barrier to Cu diffusin as well as desirable contact metal to silicon. Nickel monosilicide has been suggested as a suitable silicide due to its lower resistivitym lower sintering temperature and lower layer stress than $TiSi_2$. In this paper, Nickel as a seed layer and diffusion barrier is plated by electroless plating to make nickel monosilicide.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.11
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• pp.874-878
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• 2001

Solder bump was electroplated on wafer for flip chip application. The process is as follows. Ti/Cu were sputtered and thick PR was formed by several coating PR layer. Fine pitch vias were opened using via mask and then Cu stud and solder bump were electroplated. Finally solder bump was formed by reflow process. In this paper, we opened 40㎛ vias on 57㎛ thick PR layer and electroplated solder bump with 70㎛ height and 40㎛ diameter. After reflow process, we could form solder bump with 53㎛ height and 43㎛ diameter. In plating process, we improved the plating uniformity within 3% by using ring contact instead of conventional multi-point contact.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.279-280
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• 2009

Organic field-effect transistors (OFETs) are of interest for use in widely area electronic applications. We fabricated a copper phthalocyanine (CuPc) based field-effect transistor with different metal electrode. The CuPc FET device was made a top-contact type and the substrate temperature was room temperature. The source and drain electrodes were used an Au and Al materials. The CuPc thickness was 40nm, and the channel length was $50{\mu}m$, channel width was 3mm. We observed a typical current-voltage (I-V) characteristics in CuPc FET with different electrode materials.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2006.09b
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• pp.761-762
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• 2006

W-Cu alloy was very useful material for a heat sink, high electric contact and EDM electrode. Powder injection molding (PIM) is the optimum manufacturing technology to provide W-Cu components with low-cost and high-volume. We used various compositions of tungsten coated copper powders (W-Cu with 10 to 80 wt-% of copper) to manufacture W-Cu components by PIM. The optimum mixing, injection molding, debinding and sintering conditions to provide the high performance W-Cu components were investigated. The thermal and mechanical properties of W-Cu parts by PIM were measured. Finally, we can verify the high performance of W-Cu components by PIM with the tungsten coated copper.

• 한국초전도학회:학술대회논문집
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• v.16
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• pp.62-62
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• 2006

• Journal of the Microelectronics and Packaging Society
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• v.12 no.2 s.35
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• pp.111-119
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• 2005

Stack specimen with three dimensional interconnection structure through Cu via of $75{\mu}m$ diameter, $90{\mu}m$ height and $150{\mu}m$ pitch was successfully fabricated using subsequent processes of via hole formation with Deep RIE (reactive ion etching), Cu via filling with pulse-reverse electroplating, Si thinning with CMP, photolithography, metal film sputtering, Cu/Sn bump formation, and flip chip bonding. Contact resistance of Cu/Sn bump and Cu via resistance could be determined ken the slope of the daisy chain resistance vs the number of bump joints of the flip chip specimen containing Cu via. When flip- chip bonded at $270^{\circ}C$ for 2 minutes, the contact resistance of the Cu/Sn bump joints of $100{\times}100{\mu}m$ size was 6.7m$\Omega$ and the Cu via resistance of $75{\mu}m$ diameter, $90{\mu}m$ height was 2.3m$\Omega$.

• Journal of Sensor Science and Technology
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• v.6 no.5
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• pp.407-413
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• 1997

The crystallized CuPc(copper phthalocyanine) film on a p-type <100> Si substrate is prepared at the substrate temperature of $300^{\circ}C$ by thermal evaporation. X -ray diffraction analysis showed the CuPc film to have a-axis oriented structure. For the measurement of photovoltaic characteristics of the CuPc/Si film and the Si substrate, a transverse current-voltage (I-V) curve is observed. In the dark, the Au/Si junction is shown to be ohmic contact. However, under illumination, a photovoltaic effect is not observed. The I-V curve in the dark indicates that the CuPc film on Si may form an ohmic contact. Since the CuPc film is a p-type semiconductor, the CuPc/p-Si junction has no barrier at the interface. Under illumination, the CuPc/Si junction shows a large photocurrent comparing with that of the wafer. The result indicates that the CuPc layer plays an important role in the photocarrier generation under red illumination (600 nm). The CuPc/Si film shows the photo voltaic characteristics with a short-circuit photocurrent ($J_{sc}$) of $4.29\;mA/cm^{2}$ and an open-circuit voltage ($V_{oc}$) of 12 mA.