• 제목/요약/키워드: Cu and Ni Diffusion

검색결과 89건 처리시간 0.069초

무전해 Ni-P UBM과 95.5Sn-4.0Ag-0.5Cu 솔더와의 계면반응 및 신뢰성에 대한 연구 (A study on the interfacial reactions between electroless Ni-P UBM and 95.5Sn-4.0Ag-0.5Cu solder bump)

  • 전영두;백경욱
    • 한국마이크로전자및패키징학회:학술대회논문집
    • /
    • 한국마이크로전자및패키징학회 2002년도 춘계 기술심포지움 논문집
    • /
    • pp.85-91
    • /
    • 2002
  • Even though electroless Hi and Sn-Ag-Cu solder are widely used materials in electronic packaging applications, interfacial reactions of the ternary Ni-Cu~Sn system have not been known well because of their complexity. Because the growth of intermetallics at the interface affects reliability of solder joint, the intermetallics in Ni-Cu-Sn system should be identified, and their growth should be investigated. Therefore, in present study, interfacial reactions between electroless Ni UB7f and 95.5Sn-4.0Ag-0.5Cu alloy were investigated focusing on morphology of the IMCs, thermodynamics, and growth kinetics. The IMCs that appear during a reflow and an aging are different each other. In early stage of a reflow, ternary IMC whose composition is Ni$_{22}$Cu$_{29}$Sn$_{49}$ forms firstly. Due to the lack of Cu diffusion, Ni$_{34}$Cu$_{6}$Sn$_{60}$ phase begins growing in a further reflow. Finally, the Ni$_{22}$Cu$_{29}$Sn$_{49}$ IMC grows abnormally and spalls into the molten solder. The transition of the IMCs from Ni$_{22}$Cu$_{29}$Sn$_{49}$ to Ni$_{34}$Cu$_{6}$Sn$_{60}$ was observed at a specific temperature. From the measurement of activation energy of each IMC, growth kinetics was discussed. In contrast to the reflow, three kinds of IMCs (Ni$_{22}$Cu$_{29}$Sn$_{49}$, Ni$_{20}$Cu$_{28}$Au$_{5}$, and Ni$_{34}$Cu$_{6}$Sn$_{60}$) were observed in order during an aging. All of the IMCs were well attached on UBM. Au in the quaternary IMC, which originates from immersion Au plating, prevents abnormal growth and separation of the IMC. Growth of each IMC is very dependent to the aging temperature because of its high activation energy. Besides the IMCs at the interface, plate-like Ag3Sn IMC grows as solder bump size inside solder bump. The abnormally grown Ni$_{22}$Cu$_{29}$Sn$_{49}$ and Ag$_3$Sn IMCs can be origins of brittle failure.failure.

  • PDF

동매트를 이용한 망간 단괴의 환원 침출 (Reduction leaching of manganese nodule with copper matte)

  • 한오형;최경수
    • 자원리싸이클링
    • /
    • 제4권3호
    • /
    • pp.26-31
    • /
    • 1995
  • 환원제로서 동매트를 사용하여 희박 염삼 용액에서 망간 단괴 침출 특성을 조사하였다. 동매트는 망간 단괴 침출에 있어서 매우 효과적인 환원제였으며 2.5M 용액으로 용액온도 $70^{\circ}C$에서 2시간 침출하는 경우 금속의 침출율은 각각 Mn 96%, Ni 95%, Co 91%, Cu 88%, Fe 36%였다. Mn, Co 및 Ni의 침출은 동매트의 첨가량에 의존하였으며 고체와 액체의 비율 또한 침출에 큰 영향을 미쳤다. 또한 침출용액의 온도 증가는 각 금속의 침출율을 향상시켰다. 망간 단괴로부터 Mn, Co, Ni 및 Cu의 침출속도는 동매트를 환원제로 사용하는 경우 표면 화학반응과 세공 확산에 의해 지배되었으며 이때의 각 금속의 활성화 에너지를 구한 결과 Mn, Co, Ni, Cu는 17.6, 12.8, 17.2 및 57.9 Kcal/mol이었다.

  • PDF

액상 침적에 의한 Monel 400기지상에 형성된 Al-Cu 합금 코팅층의 조직 및 경도 (Microstructure and Hardness of Al-Cu Alloy Coating on Monel 400 by Hot Dipping)

  • 조선욱;이임렬
    • 한국표면공학회지
    • /
    • 제29권4호
    • /
    • pp.278-285
    • /
    • 1996
  • The structure of coating layer formed by hot dip Al-Cu alloy coating on Monel 1400 metal was studied. The coating layer consists of alloyed layer adjacent to the Monel 400 substrate and Al-Cu alloy. It was found that the hardness of coating increased with dipping time and heat treatment associated with the diffusion and the formation of intermetallic compound at the interface. However the thickness of coating layer was decreased at high dipping temperature due to tile higher viscosity of liquid coating alloy. Diffusion heat treatment at $600^{\circ}C$ after coating resulted in the disappearence of adhered Al(Cu) and $CuAl_2$ phases, and then they transformed into the new phases of CuAl and Al7Cu4Ni at coating layer.

  • PDF

Effect of Highly Oriented Layer on GMR and Magnetic Properties of NiFe/Cu Thin Film Prepared by Magnetron Sputtering

  • Yoo, Yong-Goo;Yu, Seong-Cho;Min, Seong-Gi;Kim, Kyeong-Sup;Jang, Pyung-Woo
    • Journal of Magnetics
    • /
    • 제6권4호
    • /
    • pp.129-131
    • /
    • 2001
  • In order to investigate the effect of the interface on GMR, [NiFe(25 ${\AA}$)/Cu(24${\AA}$)]$_2$/Si thin film was epitaxially grown on HF-treated Si (001) substrate using a DC magnetron sputtering method. Typical GMR effects could be observed in epitaxial film with a weak antiferromagnetic exchange coupling while non epitaxial film showed unsaturated and broad MR curves probably due to inter-diffusion between NiFe and Cu layers. Ferromagnetic resonance (FMR) experiment showed two distinct absorption peaks in all films. Each peak was revealed to come from each NiFe layer with different magnetic property. In FMR measurement very clear interface in epitaxial films could be confirmed by a lower value of line width (ΔH) and higher M$\sub$s/ of epitaxial film than those of non epitaxial films, respectively.

  • PDF

수소 정제용 팔라듐 합금 분리막 연구 (A Study on the Palladium Alloy Membrane for Hydrogen Separation)

  • 우병일;김동원
    • 한국표면공학회지
    • /
    • 제42권5호
    • /
    • pp.232-239
    • /
    • 2009
  • This study presented the effect of membrane thickness on hydrogen permeability. Microvoids on the surface of the membrane should not exist for the exact values of hydrogen permeability. Pd-Cu-Ni hydrogen alloy membranes were fabricated by Ni powder sintering, substrate plasma pretreatment, sputtering and Cu reflow process. And this leaded to void-free surface and dense film of Pd-Cu-Ni hydrogen alloy membrane. Hydrogen permeation test showed that hydrogen permeability increased from 2.7 to $15.2ml/cm^2{\cdot}min{\cdot}atm^{0.5}$ as membrane thickness decreased from 12 to $4{\mu}m$. This represented the similar trend as a hydrogen permeability of pure palladium membrane based on solution-diffusion mechanism.

태양전지의 저가격.고효율화를 위한 Ni/Cu/Ag 전극에 관한 연구 (The Research of Solar Cells Applying Ni/Cu/Ag Contact for Low Cost & High Efficiency)

  • 조경연;이지훈;이수홍
    • 한국전기전자재료학회:학술대회논문집
    • /
    • 한국전기전자재료학회 2009년도 하계학술대회 논문집
    • /
    • pp.444-445
    • /
    • 2009
  • The metallic contact system of silicon solar cell must have several properties, such as low contact resistance, easy application and good adhesion. Ni is shown to be a suitable barrier to Cu diffusion as well as desirable contact metal to silicon. Nickel monosilicide(NiSi) has been suggested as a suitable silicide due to its lower resistivity, lower sintering temperature and lower layer stress than $TiSi_2$. Copper and Silver can be plated by electro & light-induced plating method. Light-induced plating makes use the photovoltaic effect of solar cell to deposit the metal on the front contact. The cell is immersed into the electrolytic plating bath and irradiated at the front side by light source, which leads to a current density in the front side grid. Electroless plated Ni/ Electro&light-induced plated Cu/ Light-induced plated Ag contact solar cells result in an energy conversion efficiency of 16.446 % on $0.2\sim0.6\;{\Omega}{\cdot}cm$, $20\;\times\;20\;mm^2$, CZ(Czochralski) wafer.

  • PDF

14K 화이트-레드골드의 확산접합 공정에 따른 접합 물성 연구 (Bonding Properties of 14K White-Red Gold Alloy by Diffusion Bonding Process)

  • 송정호;송오성
    • 한국재료학회지
    • /
    • 제27권7호
    • /
    • pp.386-391
    • /
    • 2017
  • Using a customized diffusion bonder, we executed diffusion bonding for ring shaped white gold and red gold samples (inner, outer diameter, and thickness were 15.7, 18.7, and 3.0 mm, respectively) at a temperature of $780^{\circ}C$ and applied pressure of 2300 N in a vacuum of $5{\times}10^{-2}$ torr for 180 seconds. Optical microscopy, field emission scanning electron microscopy (FE-SEM), and energy-dispersive X-ray spectroscopy (EDS) were used to investigate the microstructure and compositional changes. The mechanical properties were confirmed by Vickers hardness and shear strength tests. Optical microscopy and FE-SEM confirmed the uniform bonding interface, which was without defects such as micro pores. EDS mapping analysis confirmed that each gold alloy was 14K with the intended composition; Ni and Cu was included as coloring metals in the white and red gold alloys, respectively. The effective diffusion coefficient was estimated based on EDS line scanning. Individual values of Ni and Cu were $5.0{\times}10^{-8}cm^2/s$ and $8.9{\times}10^{-8}cm^2/s$, respectively. These values were as large as those of the melting points due to the accelerated diffusion in this customized diffusion bonder. Vickers hardness results showed that the hardness values of white gold and red gold were 127.83 and 103.04, respectively, due to solid solution strengthening. In addition, the value at the interface indicated no formation of intermetallic compound around the bonding interface. From the shear strength test, the sample was found not to be destroyed at up to 100,000 gf due to the high bonding strength. Therefore, these results confirm the successful diffusion bonding of 14K white-red golds with a diffusion bonder at a low temperature of $780^{\circ}C$ and a short processing time of 180 seconds.

Research of Diffusion Bonding of Tungsten/Copper and Their Properties under High Heat Flux

  • Li, Jun;Yang, Jianfeng
    • 한국재료학회:학술대회논문집
    • /
    • 한국재료학회 2011년도 춘계학술발표대회
    • /
    • pp.14-14
    • /
    • 2011
  • W (tungsten)-alloys will be the most promising plasma facing armor materials in highly loaded plasma interactive components of the next step fusion reactors due to its high melting point, high sputtering resistance and low deuterium/tritium retention. The bonding technology of tungsten to Cu alloy was one of the key issues. In this paper, W/CuCrZr diffusion bonding has been performed successfully by inserting pure metal interlay. The joint microstructure, interfacial elements migration and phase composition were analyzed by SEM, EDS, XRD, and the joint shear strength and micro-hardness were investigated. The mock-ups were fabricated successfully with diffusion bonding and the cladding technology respectively, and the high heat flux test and thermal fatigue test were carried out under actively cooling condition. When Ni foil was used for the bonding of tungsten to CuCrZr, two reaction layers, Ni4W and Ni(W) layer, appeared between the tungsten and Ni interlayer with the optimized condition. Even though Ni4W is hard and brittle, and the strength of the joint was oppositely increased (217 MPa) due primarily to extremely small thicknesses (2~3 ${\mu}m$). When Ti foil was selected as the interlayer, the Ti foil diffused quickly with Cu and was transformed into liquid phase at $1,000^{\circ}C$. Almost all of the liquid was extruded out of the interface zone under bonding pressure, and an extremely thin residual layer (1~2 ${\mu}m$) of the liquid phase was retained between the tungsten and CuCrZr, which shear strength exceeded 160 MPa. When Ni/Ti/Ni multiple interlayers were used for bonding of tungsten to CuCrZr, a large number of intermetallic compound ($Ni_4W/NiTi_2/NiTi/Ni_3T$) were formed for the interdiffusion among W, Ni and Ti. Therefore, the shear strength of the joint was low and just about 85 MPa. The residual stresses in the clad samples with flat, arc, rectangle and trapezoid interface were estimated by Finite Element Analysis. The simulation results show that the flat clad sample was subjected maximum residual stress at the edge of the interface, which could be cracked at the edge and propagated along the interface. As for the rectangle and trapezoid interface, the residual stresses of the interface were lower than that of the flat interface, and the interface of the arc clad sample have lowest residual stress and all of the residual stress with arc interface were divided into different grooved zones, so the probabilities of cracking and propagation were lower than other interfaces. The residual stresses of the mock-ups under high heat flux of 10 $MW/m^2$ were estimated by Finite Element Analysis. The tungsten of the flat interfaces was subjected to tensile stresses (positive $S_x$), and the CuCrZr was subjected to compressive stresses (negative $S_x$). If the interface have a little microcrack, the tungsten of joint was more liable to propagate than the CuCrZr due to the brittle of the tungsten. However, when the flat interface was substituted by arc interfaces, the periodical residual stresses in the joining region were either released or formed a stress field prohibiting the growth or nucleation of the interfacial cracks. Thermal fatigue tests were performed on the mock-ups of flat and arc interface under the heat flux of 10 $MW/m^2$ with the cooling water velocity of 10 m/s. After thermal cycle experiments, a large number of microcracks appeared at the tungsten substrate due to large radial tensile stress on the flat mock-up. The defects would largely affect the heat transfer capability and the structure reliability of the mock-up. As for the arc mock-up, even though some microcracks were found at the interface of the regions, all microcracks with arc interface were divided into different arc-grooved zones, so the propagation of microcracks is difficult.

  • PDF

리플로 공정변수가 BGA 솔더링 특성에 미치는 영향 (Effect of Reflow Variables on the Characteristic of BGA Soldering)

  • 한현주;박재용;정재필;강춘식
    • 마이크로전자및패키징학회지
    • /
    • 제6권3호
    • /
    • pp.9-18
    • /
    • 1999
  • 본 연구에서는 융점 이상에서의 유지시간에 따른 Sn-3.5Ag 및 Sn-37Pb 공정솔더볼과 Au/Ni/Cu 기판 사이의 야금학적 특성을 고찰하였다. 현재 상용되는 리플로 솔더링 장비를 사용하여, 최고 솔더링 온도와 Conveyor 속도를 변화시킴으로써 융점이상에서의 유지시간을 측정하였다. 결과로서 접합부 계면에서 스캘럽 형태의 $Ni_3Sn_4$금속간화합물이 형성되었고, Cu-Sn계 화합물은 관찰되지 않았다. Ni층이 Cu의 확산 장벽으로 작용하였다. 최고 솔더링 온도가 증가함에 따라 금속간화합물 층의 두께가 최고 2.2$\mu\textrm{m}$까지 성장하였다. 스캘럽의 형상은 반구형에서 지름이 더 작은 볼록한 형상으로 변하게 된다. 접합부의 미세경도값은 Sn-3.5Ag와 Sn-37Pb의 공정조직이 성장함에 따라 감소하였다.

  • PDF

The Effects of UBM and SnAgCu Solder on Drop Impact Reliability of Wafer Level Package

  • Kim, Hyun-Ho;Kim, Do-Hyung;Kim, Jong-Bin;Kim, Hee-Jin;Ahn, Jae-Ung;Kang, In-Soo;Lee, Jun-Kyu;Ahn, Hyo-Sok;Kim, Sung-Dong
    • 마이크로전자및패키징학회지
    • /
    • 제17권3호
    • /
    • pp.65-69
    • /
    • 2010
  • In this study, we investigated the effects of UBM(Under Bump Metallization) and solder composition on the drop impact reliability of wafer level packaging. Fan-in type WLP chips were prepared with different solder ball composition (Sn3.0Ag0.5Cu, and Sn1.0Ag0.5Cu) and UBM (Cu 10 ${\mu}m$, Cu 5 ${\mu}m$\Ni 3 ${\mu}m$). Drop test was performed up to 200 cycles with 1500G acceleration according to JESD22-B111. Cu\Ni UBM showed better drop performance than Cu UBM, which could be attributed to suppression of IMC formation by Ni diffusion barrier. SAC105 was slightly better than SAC305 in terms of MTTF. Drop failure occurred at board side for Cu UBM and chip side for Cu\Ni UBM, independent of solder composition. Corner and center chip position on the board were found to have the shortest drop lifetime due to stress waves generated from impact.