• 대한금속재료학회지
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• 제47권11호
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• pp.740-747
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• 2009

The purpose of this study is to identify the effect of electrolyte compositions on electrodeposited copper foil. First of all, the polyimide substrate was pretreated with plasma. Finally, copper foil was deposited on a Cu/Ni/Polyimide substrate using the electroplating technique. As the quantity of Cu increased, preferred orientations changed into (111). Increasing sulfuric acid, on the other hand, brought down the preferred orientation of (111). The lowest sheet resistance, surface roughness, and fine adhesion were detected when the ratio of $Cu^{2+}$ and $H_2SO_4$ is 50:50(g/l).

• 한국분말재료학회지
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• 제29권3호
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• pp.226-232
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• 2022

In this study, a new manufacturing process for a multilayer-clad electrical contact material is suggested. A thin and dense BCuP-5 (Cu-15Ag-5P filler metal) coating layer is fabricated on a Ag plate using a high-velocity oxygen-fuel (HVOF) process. Subsequently, the microstructure and bonding properties of the HVOF BCuP-5 coating layer are evaluated. The thickness of the HVOF BCuP-5 coating layer is determined as 34.8 ㎛, and the surface fluctuation is measured as approximately 3.2 ㎛. The microstructure of the coating layer is composed of Cu, Ag, and Cu-Ag-Cu3P ternary eutectic phases, similar to the initial BCuP-5 powder feedstock. The average hardness of the coating layer is 154.6 HV, which is confirmed to be higher than that of the conventional BCuP-5 alloy. The pull-off strength of the Ag/BCup-5 layer is determined as 21.6 MPa. Thus, the possibility of manufacturing a multilayer-clad electrical contact material using the HVOF process is also discussed.

• 한국재료학회지
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• 제10권8호
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• pp.551-557
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• 2000

구리계 리드페임의 표면에 흑생산화물을 형성시키기 위하여 알칼리 용액에 담궈 산화시킨후 EMC(epoxy molding compound)로 몰딩하였고 기계적 가공을 하여 SDCB(sandwiched double-cantilever beam) 및 SBN(sandwiched Brazil-nut)시편을 만들었다. SDCB와 SBN 시편은 리드프레임/EMC 계면의 접착력을 각각 준 mode I 하중 및 혼합모드 하중 하에서 파괴인성치로 측정하기 위하여 고안되었다. 파괴경로를 밝혀내기 위하여 접착력 츨정 후에 얻어진 파면에 대하여 glancing-angle XRD, SEM, AFM, EDS 및 AES를 이용하여 분석하였다. SDCB 실험 후의 파면은 파괴되는 양상에 따라 세 가지 형태로 나눌 수 있었으며, 각 형태는 리드프레임의 접착전 표면 산화물 형성 상태와 밀접한 관계가 있었다. SBN 실험 후의 파면은 균열에서 가까운 부분과 먼 부분으로 나누어지는 특징을 보였는데, 이는 동적 파괴 효과(dynamic fracture effect)에 기인하는 것이라 생각된다. 또한 위상각에 따라 확실히 다른 파괴 양상을 보였는데, 이는 위상각에 따라 mode II 성분이 변하기 때문으로 생각된다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2000년도 제18회 학술발표회 논문개요집
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• pp.60-60
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• 2000

The adhesion interface formation between copper and poly(ethylene terephthalate)(PET), poly(methyl methacrylate)(PMMA) and Polyimide films was treated using Ion assisted reaction system to sequential sputter deposition by High-Frequency ion source. The ion beam modification system used a new type of low power HF ion thruster for space application as new low thruster electric propulsion system. Low power HF ion thruster with diameter 100mm gives the opportunity to obtain beams of Ar+ with currents 20~150 mA (current density 0.5~3.5 mA/cm2) and energy 200~2500eV at HF power level 10~150 W. Using Ar as a working gas it is possible to obtain thrust within 3~8 mN. Contact angles for untreated films were over 95$^{\circ}$ and 80 for Pet, 10o for PMMA and 12o for PI samples as a condition of ion assisted reaction at the ion dose of 10$\times$1016 ions/cm2, the ion beam potential of 1.2 keV and 4 ml/min for environmental gas flow rate. 900o peel tests yielded values of 15 to 35 for PET, 18 to 40 and 12 to 36 g/min. respectively. High resolution X-ray photoelectron spectrocopy is the Cls region for Cu metal on these polymer substrates showed increases in C=O-O groups for polymide, whereas PET and PMMA treated samples showed only C=O groups with increase the ion dose. Finally, unstable polymer surface can be changed from hydrophobic to hydrophilic formation such as C-O and C=O that were confirmed by the XPS analysis, conclusionally, the ion assisted reaction is very effective tools to attach reactive ion species to form functional groups on C-C bond chains of PET, PMMA and PI.

• 마이크로전자및패키징학회지
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• 제17권3호
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• pp.79-84
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• 2010

3차원 Si 칩 패키징 공정을 위한 비아 홀(TSV: Through-Si-Via) 및 Au 시드층 형성, 전기 도금을 이용한 Cu 충전기술과 범핑 공정 단순화에 관하여 연구하였다. 비아 홀 형성을 위하여 $SF_6$ 와 $C_4F_8$ 플라즈마를 교대로 사용하는 DRIE(Deep Reactive Ion Etching) 법을 사용하여 Si 웨이퍼를 에칭하였다. 1.92 ks동안 에칭하여 직경 40 ${\mu}m$, 깊이 80 ${\mu}m$의 비아 홀을 형성하였다. 비아 홀의 옆면에는 열습식 산화법으로 $SiO_2$ 절연층을, 스퍼터링 방법으로 Ti 접합층과 Au 시드층을 형성하였다. 펄스 DC 전기도금법에 의해 비아 홀에 Cu를 충전하였으며, 1000 mA/$dm^2$ 의 정펄스 전류에서 5 s 동안, 190 mA/$dm^2$의 역펄스 조건에서 25 s 동안 인가하는 조건으로 총 57.6 ks 동안 전기도금하였다. Si 다이 상의 Cu plugs 위에 리소그라피 공정 없이 전기도금을 실시하여 Sn 범프를 형성할 수 있었으며, 심각한 결함이 없는 범프를 성공적으로 제조할 수 있었다.

• 공업화학
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• 제2권3호
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• pp.289-299
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• 1991

후막 구리도체에 적합한 유리를 얻기 위하여 연붕규산계 및 무연 붕규산계 유리를 기반으로 하는 9종의 유리를 제조하고 후막 구리도체에의 적합성을 시험하였다. 그 결과 모든 유리들이 후막 구리도체의 쉬트 저항치, 납땜성 및 땜납 침식저항에는 양호하게 기여하는 것을 확인하였다. 그러나 후막과 알루미나 기판간의 노화후의 부착강도는 연붕규산계 유리로 만들어진 구리 도체막 만이 유용한 값을 가졌고, 그 외의 유리로 만들어진 구리 도체막의 노화후 부착강도는 사용하기에 부적합할 정도로 낮은 것이었다. 특히 $Cu_2O$ 가 첨가된 연붕규산계 유리가 후막 구리도체 제조에 가장 양호한 것으로 확인되었다.

• 한국태양에너지학회:학술대회논문집
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• 한국태양에너지학회 2009년도 춘계학술발표대회 논문집
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• pp.214-219
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• 2009

In high-efficiency crystalline silicon solar cells, If high-efficiency solar cells are to be commercialized. It is need to develop superior contact formation method and material that can be inexpensive and simple without degradation of the solar cells ability. For reason of plated metallic contact is not only high metallic purity but also inexpensive manufacture. It is available to apply mass production. Especially, Nickel, Copper and Silver are applied widely in various electronic manufactures as easily formation is available by plating. The metallic contact system of silicon solar cell must have several properties, such as low contact resistance, easy application and good adhesion. Ni is shown to be a suitable barrier to Cu diffusion as well as desirable contact metal to silicon. Nickel monosilicide(NiSi) has been suggested as a suitable silicide due to its lower resistivity, lower sintering temperature and lower layer stress than $TiSi_2$. Copper and Silver can be plated by electro & light-induced plating method. Light-induced plating makes use the photovoltaic effect of solar cell to deposite the metal on the front contact. The cell is immersed into the electrolytic plating bath and irradiated at the front side by light source, which leads to a current density in the front side grid. Electroless plated Ni/ Electro&light-induced plated Cu/ Light-induced plated Ag contact solar cells result in an energy conversion efficiency of 14.68 % on $0.2{\sim}0.6{\Omega}{\cdot}cm,\;20{\times}20mm^2$, CZ(Czochralski) wafer.

• 한국마이크로전자및패키징학회:학술대회논문집
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• 한국마이크로전자및패키징학회 2000년도 추계 기술심포지움 논문집
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• pp.57-57
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• 2000

본 논문에서는 MCM 및 패키지의 Lid로 사용되는 합금인 Kovar (Fe-Ni-Co alloy) 와 LTCC (Low Temperature Co-fired Ceramics) 간의 Brazing 특성을 연구하였다. 기존에 사용되고 있는 알루미나 패키지의 경우, 주로 80$0^{\circ}C$ 이상의 온도에서 Brazing을 실시하고 있으며, 조성은 Ag-Cu 계열을 사용하고 있다. 하지만, LTCC 의 경우, 소결온도가 85$0^{\circ}C$ 내외로서 기존의 방법을 그대로 적용하기는 어려움이 있다. 또한 Brazing 특성에 따른 접착 강도는 Brazing Alloy 의 영향뿐만 아니라 LTCC 와 전도체 전극사이의 Metallization 에 크게 영향을 받는다. 따라서, 본 논문에서는 Brazing Alloy의 종류 (Ag-Cu, Au-Sn) 및 Brazing 조건에 따른 Brazing 특성뿐만 아니라, 전도체 전극내 유리질 함량에 따른 Brazing 특성을 평가하여 LTCC/Kovar 간의 최적의 Brazing 조건을 구현하고자 하였다.

• Current Photovoltaic Research
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• 제1권2호
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• pp.109-114
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• 2013

$Cu_2ZnSnS_4$ (CZTS) nanoparticles were synthesized by a solvothermal method using copper (II) acetate, zinc acetate, tin chloride, and sulfur in diethylenetriamine solvent. Binary sulfide particles such as CuS, ZnS, SnS, and $SnS_2$ were obtained at $180^{\circ}C$; single-phase CZTS nanoparticles were obtained at $280^{\circ}C$. CZTS nanoparticles with spherical shape and grain size of 40 to 60 nm were obtained at $280^{\circ}C$. In the middle of 180 and $280^{\circ}C$, CZTS and ZnS phases were found. The time variation of reaction at $280^{\circ}C$ revealed that an amorphous state formed first instead of binary phases and then the amorphous phase was converted to crystalline CZTS state; it is different reaction path way from conventional solid-state reaction path of which binary phases react to form CZTS. CZTS films deposited and annealed from single-phase nanoparticles showed porous microstructure and poor adhesion. This indicates that a combination of CZTS and other flux phase is necessary to have a dense film for device fabrication.

• 한국재료학회지
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• 제32권12호
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• pp.522-527
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• 2022

Among efforts to improve techniques for the chemical vapor deposition of large-area and high-quality graphene films on transition metal substrates, being able to reliably transfer these atomistic membranes onto the desired substrate is a critical step for various practical uses, such as graphene-based electronic and photonic devices. However, the most used approach, the wet etching transfer process based on the complete etching of metal substrates, remains a great challenge. This is mainly due to the inevitable damage to the graphene, unintentional contamination of the graphene layer, and increased production cost and time. Here, we report the systematic study of an H₂ bubbling-assisted transfer technique for graphene films grown on Cu foils, which is nondestructive not only to the graphene film but also to the Cu substrate. Also, we demonstrate the origin of the graphene film tearing phenomenon induced by this H₂ bubbling-assisted transfer process. This study reveals that inherent features are produced by rolling Cu foil, which cause a saw-like corrugation in the poly(methyl methacrylate) (PMMA)/graphene stack when it is transferred onto the target substrate after the Cu foil is dissolved. During the PMMA removal stage, the graphene tearing mainly appears at the apexes of the corrugated PMMA/graphene stack, due to weak adhesion to the target substrate. To address this, we have developed a modified heat-press-assisted transfer technique that has much better control of both tearing and the formation of residues in the transferred graphene films.