• Title/Summary/Keyword: Cu adhesion

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Reliability of Cu Interconnect under Compressive Fatigue Deformation Varying Interfacial Adhesion Treatment (유연소자용 기판과의 접착 특성에 따른 구리 배선의 압축 피로 거동 및 신뢰성)

  • Min Ju Kim;Jeong A Heo;Jun Hyeok Hyun;So-Yeon Lee
    • Journal of the Microelectronics and Packaging Society
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    • v.30 no.4
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    • pp.105-111
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    • 2023
  • Electronic devices have been evolved to be mechanically flexible that can be endured repetitive deformation. This evolution emphasizes the importance of long-term reliability in metal wiring connecting electronic components, especially under bending fatigue in compressed environments. This study investigated methods to enhance adhesion between copper (Cu) and polyimide (PI) substrates, aiming to improve the reliability of copper wiring under such conditions. We applied oxygen plasma treatment and introduced a chromium (Cr) adhesion layer to the polyimide substrate. Our findings revealed that these adhesion enhancement methods significantly affect compression fatigue behavior. Notably, the chromium adhesion layer, while showing weaker fatigue characteristics at 1.5% strain, demonstrated superior performance at 2.0% strain with no delamination, outperforming other methods. These results offer valuable insights for improving the reliability of flexible electronic devices, including reducing crack occurrence and enhancing fatigue resistance in their typical usage environments.

The Influence of Leadframe Oxidation on the Cu/EMC Interface Adhesion (리드프레임의 산화가 Cu/EMC 계면 접착력에 미치는 영향)

  • Jo, Sun-Jin;Baek, Gyeong-Uk
    • Korean Journal of Materials Research
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    • v.7 no.9
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    • pp.781-788
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    • 1997
  • Cu/EMC 계면 접착력에 미치는 산화의 규명하기 위해 리드프레임의 저온 산화에 대하여 조사하였다. 이전의 보고와 달리, 저온에서도 Cu$_{2}$O위에 CuO산화물이 형성되어 Cu/Cu$_{2}$O(NiO)/Cu(NiO)/air의 산화층 구조를 나타내었다. Cu/EMC 계면 접착력은 산화가 진행됨에 따라 산화 초기에 급격히 증가하다 최대값에 이르고, 이후의 계속적인 산화로 감소하는 양상을 보였다. 접착력은 산화 온도나 리드프레임의 종류보다 산화막의 두께에 밀접한 상관 관계를 나타내었다. 최대 계면 접착력이 얻어지는 산화막의 두께는 리드프레임의 종류보다 산화막의 두께에 밀접한 상관 관계를 나타내었다. 최대 계면 접착력이 얻어지는 산화막의 두께는 리드프레임의 종류와 무관하게 대략 20nm 와 30nm 사이에 존재하였다. 산화 초기의 접착력 증가는 산화로 인한 EMC에 대한 젖음성의 증가와 기계적 고착 효과의 증가에 기인하였다. 리드프레임과 EMC의 파괴 표면에 대한 AES, XPS 분석으로 부터, 산화막의 두께가 얇을 때에는 Cu$_{2}$O//CuO의 계면 파괴 + EMC 자체 파괴가 복합적으로 발생함을 알 수 있었다. 반면에 과도한 산화로 낮을 접착력을 나타내는 시편은 Cu/Cu$_{2}$/O 계면의 파괴를 나타냈다.

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Insulated, Passivated and Adhesively-Promoted Bonding Wire using Al2O3 Nano Coating

  • Soojae Park;Eunmin Cho;Myoungsik Baek;Eulgi Min;Kyujung Choi
    • Journal of the Microelectronics and Packaging Society
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    • v.31 no.2
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    • pp.1-8
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    • 2024
  • Bonding wires are composed of conductive metals of Au, Ag & Cu with excellent electrical conductivities for transmitting power and signals to wafer chips. Wire metals do not provide electrical insulation, adhesion promoter and corrosion passivation. Adhesion between metal wires is extremely weak, which is responsible for wire cut failures during thermal cycling. Organic coating for electrical insulation does not satisfy bondability and manufacturability, and it is complex to apply very thin organic coating on metal wires. Automotive packages require enhanced reliability of packages under harsh conditions. LED and power packages are susceptible to wire cut failures. Contrary to conventional OCB behaviors, forming gas was not required for free air ball formation for both Ag and Pd-coated Cu wires with Al2O3 passivation.

High $T_c$, Superconductors for Applications

  • Soh, Deawha;Fan, Zhanguo
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2003.05a
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    • pp.366-369
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    • 2003
  • High T$_{c}$ superconducting lines will be applied as key materials in the areas of power transmission line; magnetic levitation of vehicle; magnetic separation; magnetic energy storage and marine propulsion. A combination method of electrophoresis deposition and zone-melting for preparation of YBaCuO tape is proposed. The submicron particle powder of YBaCuO made by sol-gel method is used in the electrophoresis process. A 40~50${\mu}{\textrm}{m}$ thickness of YBaCuO film on Ag plate could be deposited in about three minutes. After deposition the film is rolled and heat treated in order to increase the density and the adhesion of the film to the Ag plate. Silver(Ag) and lead oxide(PbO) were added in the YBaCuO powder in order to reduce its melting point. The YBaCuO coating with controlled Ag and PbO contents was preliminarily zone-melted at about 945$^{\circ}C$.>.

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High $T_c$ Superconductor Applications and Thick Film Preparation

  • Soh, Dea-Wha;Zhanguo Fan
    • Journal of information and communication convergence engineering
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    • v.1 no.2
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    • pp.63-66
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    • 2003
  • High $T_c$ superconducting lines will be applied as key materials in the areas of power transmission line; magnetic levitation of vehicle; magnetic separation; magnetic energy storage and marine propulsion. A combination method of electrophoresis deposition and zone-melting for preparation of YBaCuO tape is proposed. The submicron particle powder of YBaCuO made by sol-gel method is used in the electrophoresis process. A 40∼50 ${\mu}\textrm{m}$ thickness of YBaCuO film on Ag plate could be deposited in about three minutes. After deposition the film is rolled and heat treated in order to increase the density and the adhesion of the film to the Ag plate. Silver(Ag) and lead oxide(PbO) were added in the YBaCuO powder in order to reduce its melting point. The YBaCuO coating with controlled Ag and PbO contents was preliminarily zone-melted at about $945^{\circ}C$.

Enhanced Adhesion of Cu Film on the Aluminum Oxide by Applying an Ion-beam-mixd Al Seed Layar

  • Kim, Hyeong-Jin;Park, Jae-Won
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.08a
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    • pp.229-229
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    • 2012
  • Adhesion of Copper film on the aluminum oxide layer formed by anodizing an aluminum plate was enhanced by applying ion beam mixing method. Forming an conductive metal layer on the insulating oxide surface without using adhesive epoxy bonds provide metal-PCB(Printed Circuit Board) better thermal conductivities, which are crucial for high power electric device working condition. IBM (Ion beam mixing) process consists of 3 steps; a preliminary deposition of an film, ion beam bombardment, and additional deposition of film with a proper thickness for the application. For the deposition of the films, e-beam evaporation method was used and 70 KeV N-ions were applied for the ion beam bombardment in this work. Adhesions of the interfaces measured by the adhesive tape test and the pull-off test showed an enhancement with the aid of IBM and the adhesion of the ion-beam-mixed films were commercially acceptable. The mixing feature of the atoms near the interface was studied by scanning electron microscopy, Auger electron spectroscopy, and X-ray photoelectron spectroscopy.

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Surface Treatment of Dielectric Ceramic Resonator for High Frequency Devices (고주파용 유전체 세라믹 공진기의 표면처리)

  • Park, Hae-Duck;Kang, Sung-Goon
    • Korean Journal of Materials Research
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    • v.11 no.11
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    • pp.923-928
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    • 2001
  • An electrolytic silver plating process has been successfully developed for terminated electrode parts of dielectric ceramic resonator. High adhesion strength and high Qu is obtained and blister occurance is minimized under plating condition with $HNO_3$750 $m\ell/\ell$ and HF $ 250m\ell/\ell$ solution at $25^{\circ}C$ for 20 minutes. Adhesion strength has the highest value, 3.2 kg/mm$^2$ at etching temperature of $25^{\circ}C$. Adhesion strength, Qu and blister occurance are monotonically increased with the thickness of electrodeposition layer. In case of electrodeposition of Ag, Qu value of 380 has obtained higher than in case of electrolytic Cu plating with Qu value of 325. Therefore, terminated electrode parts of dielectric ceramic resonator reducing dielectric loss can be obtained using prensent process.

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Effects of Plasma Pretreatment of the Cu Seed Layer on Cu Electroplating (Cu seed layer 표면의 플라즈마 전처리가 Cu 전기도금 공정에 미치는 효과에 관한 연구)

  • O, Jun-Hwan;Lee, Seong-Uk;Lee, Jong-Mu
    • Korean Journal of Materials Research
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    • v.11 no.9
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    • pp.802-809
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    • 2001
  • Electroplating is an attractive alternative deposition method for copper with the need for a conformal and conductive seed layer In addition, the Cu seed layer should be highly pure so as not to compromise the effective resistivity of the filled copper interconnect structure. This seed layer requires low electrical resistivity, low levels of impurities, smooth interface, good adhesion to the barrier metal and low thickness concurrent with coherence for ensuring void-free fill. The electrical conductivity of the surface plays an important role in formation of initial Cu nuclei, Cu nucleation is much easier on the substrate with higher electrical conductivities. It is also known that the nucleation processes of Cu are very sensitive to surface condition. In this study, copper seed layers deposited by magnetron sputtering onto a tantalum nitride barrier layer were used for electroplating copper in the forward pulsed mode. Prior to electroplating a copper film, the Cu seed layer was cleaned by plasma H$_2$ and $N_2$. In the plasma treatment exposure tome was varied from 1 to 20 min and plasma power from 20 to 140W. Effects of plasma pretreatment to Cu seed/Tantalum nitride (TaN)/borophosphosilicate glass (BPSG) samples on electroplating of copper (Cu) films were investigated.

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