• Korean Chemical Engineering Research
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• v.44 no.2
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• pp.193-199
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• 2006

The catalytic oxidation of toluene over $-Al_2O_3$ supported copper-manganese oxide catalysts in the temperature range of $160-280^{\circ}C$ was investigated by employing a fixed bed flow reactor. The catalysts were characterized by BET, scanning electron microscopy (SEM), temperature-programmed reduction(TPR), temperature-programmed oxidation(TPO), X-ray photoelectron spectroscopy (XPS) and X-ray diffraction(XRD) techniques. Catalytic oxidation of toluene was achieved at the below $280^{\circ}C$, and the optimal content of copper and manganese in the catalyst was found to be 15.0 wt％Cu-10.0 wt％Mn. From the TPR/TPO and XPS results, the redox peak of 15 Cu-10 Mn catalyst shifted to the lower temperature, and the binding energy was shifted to the higher binding energy. Furthermore, It is considered that $Cu_{1.5}Mn_{1.5}O_4$ is superior to Mn oxides and CuO in the role as active factor of catalysts from the XRD results and also catalytic activities are dependent on the redox ability and high oxidation state of catalysts.

• Journal of Korean Society on Water Environment
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• v.27 no.4
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• pp.486-490
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• 2011

As(V) adsorption on aluminum oxide powder which was recycled from industrial wastes containing aluminum hydroxide was evaluated. Aluminum oxide powder in this study was prepared by calcinating aluminum hydroxide wastes at$550^{\circ}C$. Spectroscopic analysis indicated that the aluminum hydroxide wastes were changed to aluminum oxide by calcination. Arsenic adsorption isotherm was conducted with variation of ionic strength and multiple-ion systems using Ca(II) and Cu(II). As(V) removal showed typical anionic adsorption characteristics that the removal efficiency decreased with increasing pH in single As(V) system as well as in binary and ternary system. More than 80% of As(V) at an initial concentration of $5{\times}10^{-5}$ M was removed from aluminum oxide powder in As(V) single system. The effect of ionic strength on As(V) adsorption was negligible, which indicated the strong bonding between aluminum oxide powder and As(V). The removal efficiency of As(V) was higher in a binary system with Cu(II) than in a binary system with Ca(II).

• Clean Technology
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• v.23 no.4
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• pp.429-434
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• 2017

To investigate the effect of magnesium oxide addition, $Cu/ZnO/MgO/Al_2O_3$ (CZMA) catalysts were prepared using co-precipitation method with fixed molar ratio of Cu/Zn/Mg/Al as 45/45/5/5 mol% for low-temperature water gas shift reaction. Synthesized catalysts were characterized by using BET, $N_2O$ chemisorption, XRD, $H_2-TPR$ and $NH_3-TPD$ analysis. The catalytic activity tests were carried out at a GHSV of $28,000h^{-1}$ and a temperature range of $200{\sim}320^{\circ}C$. At the same condition, magnesium oxide added catalyst (CZMA 400) showed that the lowest reduction temperature and stable presence of $Cu^+$, that is active species and abundant weak acid site. Also magnesium oxide added catalysts (CZMA) showed higher catalytic activity at temperature range above $240^{\circ}C$ than the catalyst without magnesium oxide (CZA). Consequently, CZMA 400 catalyst is considered to be excellent catalyst showing CO conversion of 77.59% without deactivation for about 75 hours at $240^{\circ}C$, GHSV $28,000h^{-1}$.

• Clean Technology
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• v.21 no.3
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• pp.200-206
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• 2015

In order to investigate the effect of cerium oxide addition, Cu-ZnO-CeO₂ catalysts were prepared using co-precipitation method for water gas shift (WGS) reaction. A series of Cu-ZnO-CeO₂ catalyst with fixed Cu Content (50 wt%, calculated as CuO) and a given ceria content (e.g., 0, 5, 10, 20, 30, 40 wt%, calculated as CeO₂) were tested for catalytic activity at a GHSV of 95,541 h^-1, and a temperature range of 200 to 400 ℃. Cu-ZnO-CeO₂ catalysts were characterized by using BET, SEM, XRD, H₂-TPR, and XPS analysis. Varying composition of Cu-ZnO-CeO₂ catlysts led the difference characteristics such as Cu dispersion, and binding energy. The optimum 10 wt% doping of cerium facilitated catalyst reduction at lower temperature and improved the catalyst performance greatly in terms of CO conversion. Cerium oxide added catalyst showed enhanced activities at higher temperature when it compared with the catalyst without cerium oxide. Consequently, ceria addition of optimal composition leads to enhanced catalytic activity which is attributed to enhanced Cu dispersion, lower binding energy, and hindered Cu metal agglomeration.

• Journal of Information Display
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• v.13 no.2
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• pp.61-66
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• 2012

The double-layered Ti/Si barrier metal is demonstrated for the source/drain Cu interconnections in oxide semiconductor thin-film transistors (TFTs). The transmission electromicroscopy and ion mass spectroscopy analyses revealed that the double-layered barrier structure suppresses the interfacial reaction and the interdiffusion at the interface after thermal annealing at $350^{\circ}C$. The underlying Si layer was found to be very useful for the etch stopper during wet etching for the Cu/Ti layers. The oxide TFTs with a double-layered Ti/Si barrier metal possess excellent TFT characteristics. It is concluded that the present barrier structure facilitates the back-channel-etch-type TFT process in the mass production line, where the four- or five-mask process is used.

• Proceedings of the Korea Society for Energy Engineering kosee Conference
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• 2003.11a
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• pp.85-90
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• 2003

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2001.04a
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• pp.33-33
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• 2001

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2000.11a
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• pp.16-16
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• 2000

• Proceedings of the Korean Nuclear Society Conference
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• 2003.05a
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• pp.233.2-233.2
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• 2003

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.475-475
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• 2013

Cuprous oxide ($Cu_2O$)는 밴드갭이 2.17 eV p-type 산화물 반도체로써 태양에너지 변환기, photocatalysis (광촉매작용), 센서, 스위칭 메모리 등 응용이 다양한 재료이다. 산화물 반도체의 기본 특성은 나노/마이크로 범위 안에서 재료의 표면형태, 크기, 구조와 형상 공간방향등에 크게 영향을 받는다. 그렇기 때문에 원하는 $Cu_2O$ 특성을 얻기 위해서 성장 거동을 아는 것은 매우 중요하다. RF 마그네트론 스퍼터법으로 rod 성장 사례는 잘 알려지지 않았다. 그래서 RF 마그네트론 스퍼터법 $Cu_2O$ rod 형성 실험을 통하여 $Cu_2O$ 형성과 성장 거동을 알아보았다. RF 마그네트론 스퍼터법으로 $Cu_2O$ rod를 glass 기판 위에 Cu metal target을 이용하여 형성시켰다. $Cu_2O$ rod 합성을 위해 기판온도 및 산소분압 O2/(Ar+O2)=3%, 5%, 7% 증착시간 등을 변화시켜 실험하였다. 성장된 rod의 분석은 XRD, SEM으로 확인하였다. 성장 거동은 증착온도와 증착시간에 차이를 보였다. 증착온도 $550^{\circ}C$에서 rod가 생성되는 것을 관찰하였다. 증착시간이 길어질수록 rod 길이가 길어지고 일정 시간이 지나면 rod의 길이 성장보다는 두께(폭)가 성장하는 것을 확인하였다. 증착온도 $550^{\circ}C$ 그리고 산소분압 3%, 5%, 7% 조건에서 rod 합성 실험을 하였을 때 3%, 5% 조건에서 rod의 성장을 확인하였다. 이때 3%, 5% 산소분압에 따라 rod의 모양이 변화하였다. 하지만 7% 조건에서는 rod가 성장하지 않았다. 이유는 3%, 5%에서는 Cu metal peak을 확인하였지만, 7% 조건에서는 Cu metal peak이 없었다. 이로부터 Cu metal이 $Cu_2O$ rod 생성에 영향을 미치는 중요한 요소임을 예상할 수 있었다.