• Korean Journal of Materials Research
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• v.22 no.1
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• pp.1-7
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• 2012

Thin film electrode consisting purely of porous anodic tin oxide with well-defined nano-channeled structure was fabricated for the first time and its electrochemical properties were investigated for application to an anode in a rechargeable lithium battery. To prepare the thin film electrode, first, a bi-layer of porous anodic tin oxides with well-defined nano-channels and discrete nano-channels with lots of lateral micro-cracks was prepared by pulsed and continuous anodization processes, respectively. Subsequent to the Cu coating on the layer, well-defined nano-channeled tin oxide was mechanically separated from the specimen, leading to an electrode comprised of porous tin oxide and a Cu current collector. The porous tin oxide nearly maintained its initial nano-structured character in spite of there being a series of fabrication steps. The resulting tin oxide film electrode reacted reversibly with lithium as an anode in a rechargeable lithium battery. Moreover, the tin oxide showed far more enhanced cycling stability than that of powders obtained from anodic tin oxides, strongly indicating that this thin film electrode is mechanically more stable against cycling-induced internal stress. In spite of the enhanced cycling stability, however, the reduction in the initial irreversible capacity and additional improvement of cycling stability are still needed to allow for practical use.

• Journal of Digital Convergence
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• v.10 no.8
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• pp.201-210
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• 2012

Because sensing odor varies depending on each person, even if the odor is released in line with the legal emission permission concentration levels, it can still become a social issue if a civil complaint is made. The purpose of this research is to study the possibility of putting Mn-Cu metallic oxide catalysts into practical use to economically eliminate acetaldehyde which produces a odor in the industrial process. An optimal operating parameter to eliminate acetaldehyde was deduced through a performance evaluation in the research laboratory and the performance was verified by applying the parameter into an actual facility as an on-the-site experiment through a Scale-up of pilot size. The operating temperature of the metallic oxide catalysts researched so far was at the minimum close to $220^{\circ}C$, and the $220^{\circ}C$ elimination efficiency was 50% or below. However, having experimented by using a Mn-Cu metallic oxide catalyst in this research, optimum elimination efficiency showed when space velocity (GHSV) was equal to or below 6,000 $hr^{-1}$. The average elimination efficiency was 61.2% when the catalyst controlling temperature was $120^{\circ}C$, 93.3% when the catalyst controlling temperature was $160^{\circ}C$, and 94.9% when catalyst controlling temperature was $180^{\circ}C$, thereby reflecting high elimination efficiency. The specific surface area of the catalyst was $200m^2/g$ before use, however, was reduced to $47.162m^2/g$ after 24 months and therefore showed that despite the decrease in specific surface area as time passed, there was no significant influence on the performance. Having operated Mn-Cu metallic oxide catalyst systems for at least two years on a site where there was no inflow of toxins like sulfur compounds and acidic gases, we were able to confirm that elimination efficiency of at least 90% was maintained.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.9
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• pp.20-25
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• 1998

Cu removal rates for various SiO$_2$ trench pitch sizes and densities and AFM images of surface profiles after global planarization using Cu CMP technology are investigated. In the experimental results, Cu removal rates are increasing as the pattern densities and pattern pitches are getting high and low, respectively, and then decreasing after local planarization. The rms roughness after global planarization are about 120$\AA$. AFM images with a 50% pattern density for 1${\mu}{\textrm}{m}$ and 2${\mu}{\textrm}{m}$ pitches show that thicknesses of 120~330$\AA$ Cu interconnects have been peeled off and oxide erosion of Cu/Sio$_2$ sidewall is observed. However, AFM images with a 50% pattern density for 10${\mu}{\textrm}{m}$ and 15${\mu}{\textrm}{m}$ pitches show that 260~340$\AA$ thick Cu interconnects have been trenched at the boundaries of Cu/Sio$_2$ sidewall.

• Journal of the Korean Wood Science and Technology
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• v.42 no.4
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• pp.491-498
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• 2014

In order to obtain basic data for concentration control of alkaline copper quat (ACQ) solution in wood preservative treatment, this study investigates the change of concentration and adsorption of treating solution and active ingredient, copper oxide (CuO) and didecyldimethyl ammonium chloride (DDAC), in the process of recycling of ACQ solution. Japanese larch (Larix leptolepis), Douglas-fir (Psedotsuga menziesii) and Radiata pine (Pinus radiata) were treated with ACQ solution. The active ingredient concentration of ACQ solution was decreased continuously with increase of recycling. There are differences between extent of concentration decrease of Cu (as CuO) and DDAC. DDAC was decreased more quickly and to a higher degree than Cu for all recycling. The extent of DDAC concentration decrease was remarkable than that of Cu for wood species. The amount of DDAC adsorbed into wood decreased with the increase of ACQ solution recycling, but adsorption of Cu was little difference regardless of recycling. The adsorption of Cu into wood increased as DDAC concentration decrease by recycling of ACQ solution. This is likely due to decrease of DDAC competition with Cu for the same reaction site in wood.

• Korean Journal of Materials Research
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• v.14 no.7
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• pp.462-469
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• 2004

The effect of Cu addition on the corrosion characteristics of Zr alloys that developed for nuclear fuel cladding in KAERI (Korea Atomic Energy Research Institute) was evaluated. The alloys having different element of Nb, Sn, Fe, Cr and Cu were manufactured and the corrosion tests of the alloys were performed in static autoclave at $360^{\circ}C$, distilled water condition. The alloys were also examined for their microstructures using the optical microscope and the TEM equipped with EDS and the oxide property was characterized by using X-ray diffraction. From the result of corrosion test more than 450 days, the corrosion rate of the Zr-based alloys was changed with alloying element such as Nb, Sn, Fe, Cr and especially affected by Cu addition. The corrosion resistance was increased with increasing the Cu content and the tetragonal $ZrO_2$ layer was more stabilized on the Cu-containing alloys.

• Journal of the Microelectronics and Packaging Society
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• v.20 no.1
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• pp.27-31
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• 2013

Copper-oxide (CuO) thin films were prepared by reactive sputtering of Cu onto Si wafers and characterized using a statistical design of experiments approach. The most significant factor in controlling the electrical resistivity and deposition rate was determined to be the $O_2$ fraction. The deposited CuO thin films were characterized in terms of their physical and chemical properties, using X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), X-ray diffraction (XRD), and 4-point resistance measurements. The deposited copper thin films were characterized by XPS and XRD analyses to consist of $Cu^{2+}$. The CuO thin films of highest resistivity exhibited superior rectifying responses with regard to n-type Si wafers, with a current ratio of $3.8{\times}10^3$. These superior responses are believed to be associated with the formation of a charge-depletion region originating from the p-type CuO and n-type Si materials.

• Korean Journal of Metals and Materials
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• v.48 no.1
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• pp.57-61
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• 2010

Nanosized surface structures of Cu powders were investigated at the atomic scale by field-emission transmission electron microscope techniques. The nanoscale surface oxide layer on the Cu powder was analyzed to be the $CU_2O$ phase by electron diffraction pattern and electron energy-loss spectroscopy. In addition, it was found from high-resolution transmission electron microscopy study that there are formed no surface oxide layers on the surface of alkanethiol coated Cu powders.

• Korean Journal of Materials Research
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• v.29 no.1
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• pp.37-42
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• 2019

This study investigates Ag coated $Cu_2O$ nanoparticles that are produced with a changing molar ratio of Ag and $Cu_2O$. The results of XRD analysis reveal that each nanoparticle has a diffraction pattern peculiar to Ag and $Cu_2O$ determination, and SEM image analysis confirms that Ag is partially coated on the surface of $Cu_2O$ nanoparticles. The conductive paste with Ag coated $Cu_2O$ nanoparticles approaches the specific resistance of $6.4{\Omega}{\cdot}cm$ for silver paste(SP) as $(Ag)/(Cu_2O)$ the molar ratio increases. The paste(containing 70 % content and average a 100 nm particle size for the silver nanoparticles) for commercial use for mounting with a fine line width of $100{\mu}m$ or less has a surface resistance of 5 to $20{\mu}{\Omega}{\cdot}cm$, while in this research an Ag coated $Cu_2O$ paste has a larger surface resistance, which is disadvantageous. Its performance deteriorates as a material required for application of a fine line width electrode for a touch panel. A touch panel module that utilizes a nano imprinting technique of $10{\mu}m$ or less is expected to be used as an electrode material for electric and electronic parts where large precision(mounting with fine line width) is not required.

• Journal of the Korean Vacuum Society
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• v.7 no.2
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• pp.135-140
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• 1998

We investigated the initial growth mode of Cu deposited on polyimide at high temperature($350^{\circ}C$) using x-ray photoelectron spectroscopy. We could find that when Cu is sputter-deposited on the polyimide at high temperature, Cu-C-N complex is formed first, Cu-N-O complex and Cu-oxide are mainly formed successively, and then funally metallic Cu grows. In the chemical reaction point of view, the interface of Cu/polyimide at high temperature is than that at room temperature.

• Korean Journal of Materials Research
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• v.11 no.6
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• pp.527-532
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• 2001

Dry etching of copper film using $O_2$ plasma and H(hfac) has been investigated. A one-step process consisting of copper film oxidation with an $O_2$ plasma and the removal of surface copper oxide by the reaction with H(hfac) to form volatile Cu(hfac)$_2$ and $H_2O$ was carried but. The etching rate of Cu in the range from 50 to 700 /min was obtained depending on the substrate temperature, the H(hfac)/O$_2$ flow rate ratio, and the plasma power. The copper film etch rate increased with increasing RF power at the temperatures higher than 215$^{\circ}C$. The optimum H(hfac)/O$_2$ flow rate ratio was 1:1, suggesting that the oxidation process and the reaction with H(hfac) should be in balance. Cu patterning using a Ti mask was performed at a flow rate ratio of 1:1 on 25$0^{\circ}C$\ulcorner and an isotropic etching profile with a taper slope of 30$^{\circ}$was obtained. Cu dry patterning with a tapered angle which is necessary for the advanced high resolution large area thin film transistor liquid-crystal displays was thus successfully obtained from one step process by manipulating the substrate temperature, RF power, and flow rate ratio.