• Journal of the Korean institute of surface engineering
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• v.46 no.5
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• pp.181-186
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• 2013

We performed plasma spraying for 2001 (Bi:Cu = 2:1), 0212 (Sr:Ca:Cu = 2:1:2) oxide powders. $Bi_2Sr_2CaCu_2Ox$ (2212) superconductor has been prepared by PMP-AT (partial melting process-annealing treatment). The 2212 phase is synthesized between Sr-Ca-Cu oxide coating layer (0212) and Bi-Cu oxide coating layer (2001) by movement of partial melted Bi on 2001 layer and the diffusion reaction (Cu, Sr, Ca) after PMP-AT. There are two different coating layers on joining process. The one is ABAB coating layers and the other is BAAB coating layers by arrangement of 2001 (A), 0212 (B) layers. We performed heat treatment these two different coating layers processes under same PMP-AT conditions. We obtained Bi-2212 superconducting layers at each experimental condition, and the result of MPMS, the critical temperature was showed about 78 K. But the microstructure images and result of EDS as each experimental variable were showed about the qualitatively different Bi-2212 superconducting phases. We also deduced the generation mechanism of Bi-2212 superconducting layer as a result of these experimental data, microstruc ture images, EDS data and phase diagram.

• Journal of the Microelectronics and Packaging Society
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• v.10 no.3
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• pp.89-98
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• 2003

The electrical and mechanical properties of sputtered Cu(Mg) films are investigated for highly reliable interconnects. The roughness, adhesion, hardness and resistance to thermal stress of Cu(Mg) film annealed in vacuum at $400^{\circ}C$ for 30min were improved than those of pure Cu film. Moreover, the flat band voltage(V$_{F}$ ) shift in the Capacitance-Voltage(C-V) curve upon bias temperature stressing(BTS) was not observed and leakage currents of Cu(Mg) into $SiO_2$ were three times less than those of pure Cu. Because Mg was easy to react with oxide than Cu and Si after annealing, the Mg Oxide which formed at surface and interface served as a passivation layer as well.

• Journal of the Korean Ceramic Society
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• v.45 no.12
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• pp.807-814
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• 2008

The Cu-Ni-YSZ cermet anodes for direct use of methane in solid oxide fuel cells have been fabricated by electroplating Cu into the porous Ni-YSZ cermet anode. The uniform distribution of Cu in the Ni-YSZ anode could be obtained via pulse electroplating in the aqueous solution mixture of $CuSO_4{\cdot}5H_{2}O$ and ${H_2}{SO_4}$ for 30 min with 0.05 A of average applied current. The power density ($0.17\;Wcm^{-2}$) of a single cell with a Cu-Ni-YSZ anode was shown to be slightly lower in methane at $700^{\circ}C$, compared with the power density ($0.28\;Wcm^{-2}$) of a single cell with a Ni-YSZ anode. However, the performance of the Ni-YSZ anode-supported single cell was abruptly degraded over 21 h because of carbon deposition, whereas the Cu-Ni-YSZ anode-supported single cell showed the enhanced durability upto 52 h.

• Journal of Powder Materials
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• v.9 no.4
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• pp.235-244
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• 2002

The effects of residual impurities on solid state sintering of the powder injection molded (PIMed) W-15wt%Cu nanocomposite powder were investigated. The W-Cu nanocomposite powder was produced by the mech-ano-chemical process consisting of high energy ball-milling and hydrogen reduction of W blue powder-cuO mixture. Solid state sintering of the powder compacts was conducted at $1050^{\circ}C$ for 2~10 h in hydrogen atmosphere. The den-sification of PIM specimen was slightly larger than that of PM(conventional PM specimen), being due to fast coalescence of aggregate in the PIM. The only difference between PIM and PM specimens was the amount of residual impurities. The carbon as a strong reduction agent effectively reduced residual W oxide in the PIM specimen. The $H_2O$ formed by $H_2$ reduction of oxide disintegrated W-Cu aggregates during removal process, on the contrary to this, micropore volume rapidly decreased due to coalescence of the disintegrated W-Cu aggregates during evolution of CO.It can be concluded that the higher densification was due to the earlier occurred Cu phase spreading that was induced by effective removal of residual oxides by carbon.

• Clean Technology
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• v.27 no.1
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• pp.17-23
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• 2021

Black polymer spacers are currently used for physically separating aligned camera lenses in camera modules of mobile phones. However, the mechanical properties of polymer spacers have their limits, especially in the current trend of using more lenses in thinner camera modules. Thus, copper (Cu) becomes a good candidate for those polymer spacers because of its superior mechanical properties and its inherent blackness due to its black surfaced oxides, such as copper (II) oxide (cupric oxide, CuO). The latter property is critical in quality control because the closer the color of a spacer is to black, the less light interference and flaring phenomena can occur. A standard Cu blackening process and its operational conditions were proposed in this study through a comprehensive analysis of previous research and patents. The Cu blackening process is composed of cleaning, deoxidizing, activating, blackening and sealing. The effects of operational parameters, such as the temperature of each unit process and the activator concentration, were then investigated by measuring the blackness of the Cu strips with a colorimeter. The proposed operational conditions were determined by whether the blackness of Cu strips was within the on-spec. value used in the field.

• Proceedings of the KWS Conference
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• 1994.10a
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• pp.161-162
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• 1994

No Abstract, See Full Text

• Clean Technology
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• v.16 no.2
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• pp.132-139
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• 2010

The Cu-Mn mixed oxide catalysts with different molar ratios of Cu/(Cu+Mn) prepared by co-precipitation method have been investigated in CO oxidation at $30^{\circ}C$. The catalysts used in this study were characterized by X-ray Diffraction (XRD), $N_2$ sorption, X-ray photoelectron spectroscopy (XPS), and $H_2$-temperature programmed reduction $(H_2-TPR)$ to correlate with catalytic activities in CO oxidation. The $N_2$ adsorption-desorption isotherms of Cu-Mn mixed oxide catalysts showed a type 4 having pore range of 7-20 nm and BET surface area was increased from 17 to $205\;m^2{\cdot}g^{-1}$ with increasing of Mn content. The XPS analysis showed the surface oxidation state of Cu and Mn represented $Cu^{2+}$and the mixture of $Mn^{3+}$ and $Mn^{4+}$, respectively. Among the catalysts studied here, Cu/(Cu+Mn) = 0.5 catalyst showed the highest activity at $30^{\circ}C$ in CO oxidation and the catalytic activity showed a typical volcano-shape curve with respect to Cu/(Cu+Mn) molar ratios. The water vapor showed a prohibiting effect on the efficiency of the catalyst which is due to the competitive adsorption of carbon monoxide on the active sites of catalyst surface and finally the formation of hydroxyl group with active metals.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.05b
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• pp.110-113
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• 2005

Ozone is useful oxidizing gas for the fabrication of BSCCO thin films. In order to obtain high quality oxide BSCCO thin films, higher ozone concentration is necessary. The growth rates of the films was set in the region from 0.17 to 0.27 nm/min. MgO(100) was used as a substrate. In this paper oxidation property was evaluated relation between oxide gas pressure and inverse temperature(CuO reaction). The obtained condition was formulated by the fabrication of Cu metal thin film by co-deposition using the Ion Beam Sputtering method. Because the CuO phase peak appeared at the XRD evaluation of the CuO thin film using ozone gas, this study has succeeded in the fabrication of the CuO phase at $825^{\circ}C$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.587-588
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• 2005

Ozone is useful oxidizing gas for the fabrication of BSCCO thin films. In order to obtain high quality oxide BSCCO thin films, higher ozone concentration is necessary. The growth rates of the films was set in the region from 0.17 to 0.27 nm/min. MgO(100) was used as a substrate. In this paper oxidation property was evaluated relation between oxide gas pressure and inverse temperature(CuO reaction). The obtained condition was formulated by the fabrication of Cu metal thin film by co-deposition using the Ion Beam Sputtering method. Because the CuO phase peak appeared at the XRD evaluation of the CuO thin film using ozone gas, this study has succeeded in the fabrication of the CuO phase at $825^{\circ}C$.

• Corrosion Science and Technology
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• v.9 no.6
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• pp.276-280
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• 2010

Copper(Cu) as an interconnecting metal layer can replace aluminum (Al) in IC fabrication since Cu has low electrical resistivity, showing high immunity to electromigration compared to Al. However, it is very difficult for copper to be patterned by the dry etching processes. The chemical mechanical polishing (CMP) process has been introduced and widely used as the mainstream patterning technique for Cu in the fabrication of deep submicron integrated circuits in light of its capability to reduce surface roughness. But this process leaves a large amount of residues on the wafer surface, which must be removed by the post-CMP cleaning processes. Copper corrosion is one of the critical issues for the copper metallization process. Thus, in order to understand the copper corrosion problems in post-CMP cleaning solutions and study the effects of DC biases and post-CMP cleaning solution concentrations on the Cu film, a constant voltage was supplied at various concentrations, and then the output currents were measured and recorded with time. Most of the cases, the current was steadily decreased (i.e. resistance was increased by the oxidation). In the lowest concentration case only, the current was steadily increased with the scarce fluctuations. The higher the constant supplied DC voltage values, the higher the initial output current and the saturated current values. However the time to be taken for it to be saturated was almost the same for all the DC supplied voltage values. It was indicated that the oxide formation was not dependent on the supplied voltage values and 1 V was more than enough to form the oxide. With applied voltages lower than 3 V combined with any concentration, the perforation through the oxide film rarely took place due to the insufficient driving force (voltage) and the copper oxidation ceased. However, with the voltage higher than 3 V, the copper ions were started to diffuse out through the oxide film and thus made pores to be formed on the oxide surface, causing the current to increase and a part of the exposed copper film inside the pores gets back to be oxidized and the rest of it was remained without any further oxidation, causing the current back to decrease a little bit. With increasing the applied DC bias value, the shorter time to be taken for copper ions to be diffused out through the copper oxide film. From the discussions above, it could be concluded that the oxide film was formed and grown by the copper ion diffusion first and then the reaction with any oxidant in the post-CMP cleaning solution.