• Journal of the Korean Electrochemical Society
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• v.25 no.2
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• pp.81-87
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• 2022

In this study, the effect of alkylamine on copper electroplating was analyzed using cyclic voltammetry. When water-soluble alkylamines were added to the plating solution, the reduction reaction of Cu²⁺ was inhibited. The inhibition effect of 1,12-diaminododecane has been investigated at various concentrations and conditions of the plating solution. 1,12-diaminododecane was protonated in the acidic plating solution, and therefore, it did not act as a complexing agent for Cu²⁺. Accordingly, it was confirmed that the inhibiton effect of 1,12-diaminododecane was attributed to adsorption on the Cu surface. The adsorption of 1,12-diaminododecane exhibits two characteristics: (i) protonation and subsequent electrostatic attraction with anions pre-adsorbed on Cu surface, and (ii) direct adsorption on Cu surface via amine functional group. The adsorbed 1,12-diaminododecane caused three-dimensional growth and grain refining, as well as the inhibition effect, during Cu electroplating.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.313.1-313.1
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• 2013

현재 결정질 실리콘 태양전지의 전 후면 전극의 형성은 스크린 프린팅 방법이 주를 이루고 있다. 스크린 프린팅 방법은 쉽고 빠르게 인쇄가 가능한 반면 단가가 높고 금속 페이스트에 첨가된 여러 혼합물에 의해서 전극과 기판 사이의 저항이 크다는 단점이 있다. 본 논문에서는 스크린 프린팅 방법으로 태양전지의 seed layer를 인쇄하고, Cu도금을 진행함으로써 태양전지의 전기적 특성을 비교하였다. 주요 전극 형성을 Cu 도금을 사용함으로써 전극과 기판사이의 저항을 감소시키고 값비싼 Ag페이스트를 값싼 Cu로 대체함으로써 가격을 낮출 수 있는 장점이 있다. 실험에 사용된 Si 웨이퍼 특성은 $156{\times}156$ mm2, 200 ${\mu}m$, 0.5-3.0 ${\Omega}{\cdot}cm$ and p-type 웨이퍼를 사용하였다. 웨이퍼는 표면조직화, p-n접합 형성, 반사방지막 코팅을 하였으며 스크린 프린팅 방법을 이용해 전 후면 전극을 인쇄하고 열처리 과정을 통해 전극을 형성하였다. 이 후 전면에 Cu도금을 실행하여 태양전지를 완성하였다. 완성된 태양전지는 솔라 시뮬레이터 및 TLM패턴을 이용하여 전기적 특성을 분석하였으며, SEM과 linescan, 광학현미경 등을 이용하여 전극을 분석하였다.

• Korean Chemical Engineering Research
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• v.43 no.4
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• pp.495-502
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• 2005

Copper was plated on the tungsten substrate by use of a direct copper electroless plating. The optimum deposition conditions were found to be with a concentration of $CuSO_4$ 7.615 g/L, EDTA of 10.258 g/L, and glyoxylic acid of 7 g/L, respectively. The solution temperature was maintained at $60^{\circ}C$. The pH was varied from 11.0 to 12.8. After the deposition, the properties of the copper film were investigated with X-ray diffractometer (XRD), Field emission secondary electron microscope (FESEM), Atomic force microscope (AFM), X-ray photoelectron spectroscope (XPS), and Rutherford backscattering spectroscope (RBS). The best deposition condition was founded to be the solution pH of 11.8. In the case of 10 min deposition at the pH of 11.8, the grain shape was spherical, Cu phase was pure without impurity peak ($Cu_2O$ peak), and the surface root mean square roughness was about 11 nm. The thickness of the film turned out to be 140 nm after deposition for 12 min and the deposition rate was found to be about 12 nm/min. Increase in pH induced a formation of $Cu_2O$ phase with a long rectangular grain shape. The pH control seems to play an important role for the orientation of Cu in electroless deposition. The deposited copper concentration was 99 atomic percent according to RBS. The resulting Cu/W film yielded a good adhesive strength, because Cu/W alloy forms during electroless deposition.

• Journal of the Microelectronics and Packaging Society
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• v.15 no.2
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• pp.17-21
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• 2008

The electroless plating of copper and tin were investigated for the fabrication of Sn-Cu bump. Copper and tin were electroless plated in series on $20{\mu}m$ diameter copper via to form approximately $10{\mu}m$ height bump. In electroless copper plating, acid cleaning and stabilizer addition promoted the selectivity of bath on the copper via. In electroless tin plating, the coating thickness of tin was less uniform relative to that of electroless copper, however the size of Sn-Cu bump were uniform after reflow process.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2015.05a
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• pp.31-31
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• 2015

본 연구는, TAB(Tape Automated Bonding)접속이나 Flip Chip 접속에 의한 패캐징을 실현시키기 위해, 실리콘 웨이퍼 표면에 구리 필러 및 주석 합금을 전기 도금법으로 형성하는 전기 접점용 범프에 관한 것이다. 본 연구에서는, 균일 범프 두께, 범프 표면의 균일화, 범프 내의 보이드 발생 문제 해결, 균일한 합금 조성 및 도금 속도의 고속화를 위해, Cu 도금액 및 Sn-Ag 도금액의 첨가제에 의한 표면 형상의 제어를 중심으로 그 성능에 대해 보고한다.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2007.11a
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• pp.27-27
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• 2007

Cu via fill 도금 시, void, seam과 같은 내부 defects는 공정 중 신뢰성을 떨어뜨리며, 전기신호 전달속도를 느리게 한다. 또한 Cu via fell 도금 공정 중 발생하는 과도한 Cu 표면 도금층은 wafer thenning 공정의 생산성 저하와 공정 비용 상승을 유발한다. 3D Interconnection용 직경 30${\mu}$m, 깊이 120${\mu}$m (Aspect Ratio : 4) Via를 이용하여 정류방법, 전류 parameter, 첨가제 조성에 따른 Cu via felling 특성과 overburden두께 변화를 실험적으로 검증하였다.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.387.2-387.2
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• 2014

최근 이동통신 LED 에너지 자동차 산업분야에서 제품의 고기능화 고성능화를 위한 신소재 개발 및 친환경적인 신공정 개발에 있어, PI 또는 PET와 같은 유연성 소재 위에 선택적 패턴 도금 기술, 고기능성 나노/복합 도금 등이 주목 받고 있다. 또한 전 세계적으로 유해물질의 수 출입 규제 움직임이 강력하게 제기되고 있다. 본 연구에서는 유연성 소재인 PET 위에 친환경적 방법으로 구리를 선택적으로 도금하기 위한 실험을 진행하였다. 준비된 PET 필름 위에 Ag paste를 Screen Printing법을 이용하여 Ag 전극을 패턴하고, 그 위에 무전해 도금방식을 이용하여 Ni과 Cu가 도금 되도록 하였다. Ni 무전해 도금은 pH6.5, 65도에서 시행되었으며, Cu 무전해 도금은 환경규제물질인 포름알데히드 대신에 차아인산나트륨을 사용하여 70도에서, 중성근처의 pH 농도(pH7과 pH8)에서 시행되었다. 이들 다층 박막에 대해 X-ray diffraction (XRD), SEM (Scanning Electron Microscope), XPS (X-ray Photoelectron Spectroscopy) 등을 이용하여 물리-화학적/전기적 특성들을 이용하여 조사 분석하였다.

• Journal of the Korean Magnetics Society
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• v.24 no.6
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• pp.186-190
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• 2014

To establish the coating conditions for $^{57}Co$, non-radioactive Co ions are dissolved in an acid solution and electroplated on to a copper plate. Then, the thermal diffusion of electroplated Co into a copper matrix was studied to apply a $^{57}Co$ $M{\ddot{o}}ssbauer$ source. Nanocrystalline Co particles were coated on a Cu substrate using DC electro-deposition at a pH of 1.89 to 5 and $20{\sim}30mA/cm^2$. The average grain size was up to 54 nm as the pH increased to 5. The second phase of Co-oxide was formatted as the pH was increased above 4. The diffusion degree was evaluated by mapping using scanning electron microscopy (SEM). The influence of different annealing conditions was investigated. The diffusion depth of Co depends on the annealing temperature and time. The results obtained confirm that the deposited Co diffused almost completely into a copper matrix without substantial loss at an annealing temperature of $900^{\circ}C$ for 2 hours.

• Korean Chemical Engineering Research
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• v.47 no.2
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• pp.141-149
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• 2009

The Cu thin film material and process, which have been already used for metallization of CMOS(Complementary Metal Oxide Semiconductor), has been highlighted as the Cu metallization is introduced to the metallization process for giga - level memory devices. The recent progresses in the development of key elements in electrochemical processes like surface pretreatment or electrolyte composition are summarized in the paper, because the semiconductor metallization by electrochemical processes such as electrodeposition and electroless deposition controls the thickness of Cu film in a few nm scales. The technologies in electrodeposition and electroless deposition are described in the viewpoint of process compatibility between copper electrodeposition and damascene process, because a Cu metal line is fabricated from the Cu thin film. Silver metallization, which may be expected to be the next generation metallization material due to its lowest resistivity, is also introduced with its electrochemical fabrication methods.

• Journal of the Korean Magnetics Society
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• v.27 no.4
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• pp.135-139
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• 2017

The magneto-impedance effect (MI effect) has been investigated in metal core/soft magnetic shell composite wires fabricated by electrodeposition of $Ni_{80}Fe_{20}$ on Cu wire (diameter $190{\mu}m$). The diagonal impedances $Z_{zz}$ and $Z_{{\theta}{\theta}}$ in cylindrical coordinate showed strong MI effect for the magnetic field applied along z-axis, while the off-diagonal impedance $Z_{{\theta}z}$ showed very weak MI effect. We have tried to develop the Cu $core/Ni_{80}Fe_{20}$ shell composite wire having strong MI effect in off-diagonal impedance by electrodeposion under torsional strain. The core/shell composite wire electrodeposited under torsional angles above $270^{\circ}$ showed significantly enhanced MI effect in the off-diagonal impedance. The maximum MI effect was observed in the composite wire electrodeposited under torsional angle of $360^{\circ}$. The developed method to enhance off-diagonal MI effect is expected to increase the applicability of the core/shell composite wire to magnetic sensor material.