• Nuclear Engineering and Technology
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• v.54 no.3
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• pp.975-983
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• 2022

A four-layered W/Cu functionally graded material (FGM) (W90% + Cu10%/W80% + Cu20%/W70% + Cu30%/W60% + Cu40%, wt.% fraction) and a four-layered diamond/W-Cu FGM (W90% + Cu10%/W80% + Cu20%/W70% + Cu30%/W55% + Cu40% + diamond5%, wt.% fraction) were fabricated by microwave sintering. The thermal conductivity and thermal shock resistance of diamond/W-Cu FGM and W-Cu FGM were investigated. The morphologies of the diamond particles and different FGMs were analyzed using AFM, SEM, EDS, and TEM. The results show that a 200 nm rough tungsten coating was formed on the surface of the diamond. The density of the tungsten-coated diamond/W-Cu FGM, obtained by microwave sintering at 1200 ℃ for 30 min, was 94.66%. The thermal conductivity of the fourlayered diamond/W-Cu FGM was 220 W·m^-1·K^-1, which is higher than that of the four-layered W/Cu FGM (209 W m^-1 K^-1). This indicates that adding an appropriate amount of tungsten-coated diamond to the high Cu layer W/Cu FGM improves the thermal conductivity of the composite. The diamond/W-Cu FGM sintered at 1200 ℃ for 10 min exhibited better thermal shock resistance than diamond/W-Cu FGM sintered at 1100 ℃ for 10 min.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2002.11a
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• pp.7-12
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• 2002

반도체 공정에서 구리(Cu) 배선의 미세구조와 신뢰성에 대해 연구하였는데, 특히 CVD Cu와 전기도금 Cu를 사용하여 신뢰성에 대한 texture와 결정 구조의 영향을 연구하였다 CVD Cu의 경우 여러 가지 시드층(seed layer)을 사용함으로서, 결정입자의 크기는 비슷하지만 texture가 전혀 다른 Cu 박막을 얻을 수 있었는데, 신뢰성 검사결과 (111) texture를 가진 Cu 배선의 수명이 (200) texture를 가진 Cu 배선의 수명보다 약 4배 가량 길게 나왔다. 전기도금 Cu 박막의 경우 항상 (111) texture를 갖고 있었으며 결정립의 크기도 CVD Cu의 것보다 더 컸다. Damascene 공법으로 회로 형성한 Cu 배선의 경우에도 전기도금 Cu의 결정립 크기가 CVD Cu의 것보다 더 크게 나타났으며, 신뢰성 검사결과 배선의 수명도 더 길게 나타났는데 그 차이는 0.4 $\mu\textrm{m}$ 이하의 미세선폭 영역에서 더욱 현저했다. 따라서 전기도금 Cu가 CVD Cu보다 신뢰성 측면에서 더 우수한 것으로 판명되었다.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.139-139
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• 2000

We have investigated the adsorption and reaction of Cu(hfac)(vtms) on Cu(111) surface using TPD. The recombinative desorption of Cu(hfac)(vtms) reversibly occurs between 240 and 340K. The remaining Cu(hfac) after the desorption of vtms preferentially undergo the desorption between 330 and 370K as intact Cu(hfac) than the disproportionation reaction. The disprportionation reaction between adsorbed Cu(hfac) was observed to occur between 420 and 520K with an activation energy of 34~37 kcal/mol. the geometries and adsorption sites of Cu(hfac) have been also calculated by means of extended H ckel method. It is found that standing Cu(hfac) is more stable than lying-down Cu(hfac) on the Cu(111) surface and the Cu(hfac) molecule prefers to adsorb on the hollow site over the top or bridge sites. We also have investigated the surface modification effect by preadsorbed I and Na atoms on the reaction Cu(hfac)(vtms).

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.231-231
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• 2010

현재 Cu배선 제조공정에서 전해도금은 Damascene pattern의 Cu filling에 사용되고 있는데, 우수한 특성의 전해도금을 위해서는 step coverage가 우수한 Cu seed layer가 필수적이다. 현재까지 Cu seed layer를 형성하는 방법으로는 ionized physical vapor deposition(I-PVD)이 사용되고 있는데, 22 nm 이후의 소자에서는 step coverage의 한계로 인해 완벽한 Cu filling 어려울 것으로 예상된다. 본 연구에서는 step coverage가 매우 우수한 atomic layer deposition(ALD) 방법으로 Cu seed layer를 증착하고 그 특성을 기존의 PVD 박막과 비교하였다. Ketoiminate 계열의 +2가 Cu 전구체와 $H_2$를 이용하여 ALD Cu 박막을 증착하였는데 exposure, 기판의 온도를 변화시키면서 기판별로 ALD Cu의 최적공정조건을 도출하였다. ALD Cu seed와 PVD Cu seed 위에 약 $1{\mu}m$의 Cu 박막을 전해도금한 후 박막의 두께, 비저항, 미세구조와 함께 pattern filling 특성을 비교하였다.

• Journal of the Korean Vacuum Society
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• v.6 no.4
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• pp.314-320
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• 1997

A chemical reaction and electronic structure change at the interface between copper and titanium nitride were investigated by XPS. A thin Cu layer was deposited on a TiN substrate oxidized by exposure to air at room temperature. We observed the Ti(2p), O(1s), N(1s), Cu(2p) core-level, and Cu LMM Auger line spectra. With increasing of the thickness of Cu layer, these spectra do not show any changes in the line shape as well as in peak position. In addition, the valence band spectra in XPS do not show any changes, which indicates that Cu does not react with Ti, N, and O. This inreactivity of Cu might cause a poor adhesion between Cu and TiN.

• Proceedings of the KWS Conference
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• 2007.11a
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• pp.235-237
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• 2007

In this paper, fabrication of Sn-3.0Ag-0.5Cu solder bumping having accurate composition and behavior of intermetallic compounds(IMCs) growth at interface between Sn-Ag-Cu bumps and Cu substrate were studied. The ternary alloy of the Sn-3.0Ag-0.5Cu solder was made by two binary(Sn-Cu, Sn-Ag) electroplating on Cu pad. For the manufacturing of the micro-bumps, photo-lithography and reflow process were carried out. After reflow process, the micro-bumps were aged at $150^{\circ}C$ during 1 hr to 500 hrs to observe behavior of IMCs growth at interface. As a different of Cu contents(0.5 or 2wt%) at Sn-Cu layer, behavior of IMCs was estimated. The interface were observed by FE-SEM and TEM for estimating of their each IMCs volume ratio and crystallographic-structure, respectively. From the results, it was found that the thickness of $Cu_3Sn$ layer formed at Sn-2.0Cu was thinner than the thickness of that layer be formed Sn-0.5Cu. After aging treatment $Cu_3Sn$ was formed at Sn-0.5Cu layer far thinner.

• Journal of the Korean institute of surface engineering
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• v.39 no.6
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• pp.255-262
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• 2006

Pd-Cu alloy membrane for hydrogen separation was fabricated by sputtering and Cu reflow process. At first, the Pd and Cu was continuously deposited by sputtering method on oxidized Si support, the Cu reflow process was followed. Microstructure of the surface and permeability of the membrane was investigated depending on various reflow temperature, time, Pd/cu composition and supports. With respect to our result, Pd-Cu thin film (90 wt.% Pd/10 wt.% Cu) deposited by sputtering process with thickness of $2{\mu}m$ was heat-treated for Cu reflow The voids of the membrane surface were completely filled and the dense crystal surface was formed by Cu reflow behavior at $700^{\circ}C$ for 1 hour. Cu reflow process, which is adopted for our work, could be applied to fabrication of dense Pd-alloy membrane for hydrogen separation regardless of supports. Ceramic or metal support could be easily used for the membrane fabricated by reflow process. The Cu reflow process must result in void-free surface and dense crystalline of Pd-alloy membrane, which is responsible for improved selectivity oi the membrane.

• Journal of Animal Science and Technology
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• v.44 no.4
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• pp.399-406
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• 2002

An experiment was conducted to investigate the effects of supplemental copper or/and zinc methionine chelates(Cu-Met or/and Zn-Met) on the performance, nutrient digestibility, serum IgG level, gizzard erosion, and the contents of Cu and Zn in liver and excreta of broiler chickens. One thousand d-old broiler chickens (Ross$^{(R)}$) were assigned to 4 treatments: control, 100 ppm Cu in methionine chelate(Cu-Met), 100 ppm Zn in methionine chelate(Zn-Met) and 100 ppm Cu plus 100 ppm Zn in methionine chelate(Cu-Zn-Met). Each treatment had five replications of 50 (25 male + 25 female) birds each. Average weight gains of chicks fed chelated Cu or/and Zn were significantly higher than that of chicks fed the control (P<0.05). Moreover, feed conversion rates of chicks were better in the chicks fed chelated Cu or/and Zn than in the chicks fed the control (P<0.05). The birds fed the chelated Cu and Zn(Cu-Zn-Met) tended to perform the best growth rate and feed conversion rate. Nutrient digestibilities were not affected by the dietary treatments. Serum IgG level of chicks fed Cu-Zn-Met was significantly higher than that of chicks fed the control (P<0.05). Gizzard erosion index was not significantly different among the treatments. The contents of Cu and Zn in liver were not significantly affected by the dietary treatments. The excreta contents of Cu or/and Zn were significantly high in the birds fed supplementary Cu or/and Zn. It was concluded that dietary supplementation of Cu or/and Zn in methionine chelated form improved growth and feed conversion efficiency of broilers.

• Korean Journal of Materials Research
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• v.10 no.11
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• pp.770-777
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• 2000

Microstructure and mechanical properties of the $Cu_6Sn_5$-dispersed 63Sn-37Pb solder alloy, for which $Cu_6Sn_5$ powders less than $1{\mu\textrm{m}}$ size were fabricated by mechanical alloying, were characterizde and compared with those of the Cu-dispersed solder alloy. Compared to the $Cu_6Sn_5$-dispersed solder alloy, large amount of $Cu_6Sn_5$ and fast growth of $Cu_6Sn_5$ were observed in the Cu-dispersed alloy. The $Cu_6Sn_5$-dispersed solder alloy exhibited lower yield strength, but higher ultimate tensile strength than those of the Cu-dispersed alloy. With dispersion of 1~9 vol% $Cu_6Sn_5$ and Cu, the yield strength increased from 23 MPa and to 40 MPa, respectively. The ultimate tensile strength increased from 34.7 MPa to 45.3 MPa and to 43.1 MPa with dispersion of 5 vol% $Cu_6Sn_5$ and Cu, respectively.

• Journal of the Microelectronics and Packaging Society
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• v.25 no.4
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• pp.75-81
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• 2018

The effect of $Ar-N_2$ plasma treatment on Cu surface as one of solutions to realize reliable Cu-Cu wafer bonding was investigated. Structural characteristic of $Ar-N_2$ plasma treated Cu surface were analyzed using X-ray diffraction, X-ray photoelectron spectroscopy, atomic force microscope. Ar gas was used for a plasma ignition and to activate Cu surface by ion bombardment, and $N_2$ gas was used to protect the Cu surface from contamination such as -O or -OH by forming a passivation layer. The Cu specimen under high Ar partial pressure plasma treatment showed more copper oxide due to the activation on Cu surface, while Cu surface after high $N_2$ gas partial pressure plasma treatment showed less copper oxide due to the formation of Cu-N or Cu-O-N passivation layer. It was confirmed that nitrogen plasma can prohibit Cu-O formation on Cu surface, but nitrogen partial pressure in the $Ar-N_2$ plasma should be optimized for the formation of nitrogen passivation layer on the entire surface of Cu wafer.