• Journal of the Korean Ceramic Society
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• v.30 no.10
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• pp.819-822
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• 1993

The purpose of this paper is a investigation of sensing mechanism for the carbon monoxide gas in CuO infiltrated ZnO ceramics. Potential barriers between CuO and ZnO can explain the selective sensing of carbon monoxide gas in the physically contacted CuO/ZnO ceramics. A specimen having no potential barrier between CuO and ZnO was prepared to see whether the gas sensing mechanism is related to the potential barrier. CuO and ZnO was prepared to see whether the gas sensing mechanism is related to the potential barrier. CuO was painted on the non electrode sides of ZnO ceramics. The CuO painted ZnO ceramics showed that the sensitivityfor the carbon moxnoxide gas was 1.3 times as high as that for the hydrogen gas. It is almost same gas sensitivity as that of the CuO infiltrated ZnO ceramics.

• Journal of the Korean Magnetics Society
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• v.5 no.3
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• pp.191-196
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• 1995

NiCuZn ferrites were prepared by a solid-state reaction and sintered at $900^{\circ}C$ for 5 hours. Its properties were investigated by controlling the ferrite composition and processing. NiCuZn ferrite with a composition of ${(Ni_{0.2}Cu_{0.2}Zn_{0.6}O)}_{1.02}{(Fe_{2}O_{3})}_{0.98}$ was found to have the maximum initial permeability as a result of the variation of Cu content and the (Ni+Cu)/Zn ratio. Curie temperature($T_{c}$) of NiCuZn ferrite was decreased with the larger Cu content and increased with the larger Ni content. NiCuZn ferrites of ${(Ni_{0.2}Cu_{0.2}Zn_{0.6}O)}_{1-w}{(Fe_{2}O_{3})}_{1+w}$ composition milled for 20~80 hours had the maximum initial permeability at w=-0.015 and Curie temperature ($T_{c}$) was decreased with the increasing of $Fe_{2}O_{3}$ deficiency(w).

• Journal of the Korean Ceramic Society
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• v.32 no.1
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• pp.106-112
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• 1995

In order to examine the effect of CuO and Al2O3 addition on the electrical conductivity of ZnO, both Al2O3 (0, 1, 2, 5, 10at.%) and CuO (1, 5at.%) were added to ZnO. Al2O3 addition (~2at.% Al) increased the total electrical conductivity of ZnO which was already decreased by CuO doping effect Above solid solubility of Al (~2at.%), ZnAl2O4 formed and the total electrical conductivity decreased due to the decrease of sintered density. Impedance measurements were used to know the reason and degree of contribution of three resistive elements, ZnO grain, ZnO/CuO, and ZnO/ZnO grain boundaries, to the total electrical conductivity changed.

• Bulletin of the Korean Chemical Society
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• v.23 no.8
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• pp.1135-1138
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• 2002

CuO/ZnO, CuO/SiO,sub>2, and CuO/ZrO2 catalysts were prepared for investigating the support effects on methanol dehydrogenation. It was found that the conversion of methanol was proportional to the copper surface area on Cu/ZnO cat alysts and was independent on that on Cu/ZrO2 and Cu/SiO2. The highest copper surface area was obtained with the Cu/ZrO2 (9/1). The unusual deactivation of the Cu/ZnO, which showed the highest selectivity among the catalysts tested, was observed. Pulse reaction with methanol indicated that the lattice oxygen in ZnO could be removed by forming CO2 in the catalytic reaction, supporting that the ZnO reduction was responsible for the severe deactivation of the Cu/ZnO.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.53 no.7
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• pp.347-351
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• 2004

The $ZnNb_2O_{6}$ ceramics with CuO(1, 3, 5wt%) were prepared by the conventional mixed oxide method. The ceramics were sintered at the temperature of $950^{\circ}C$∼$1075^{\circ}C$ for 3hr in air The structural properties and the microwave dielectric properties of $ZnNb_2O_{6}$ ceramics were investigated with sintering temperature and the addition of CuO. Increasing the addition of CuO, the peak of second phase($Cu_3Nb_2O_{8}$) was increased. The grain size of the $ZnNb_2O_{6}$ ceramics with CuO was increased with CuO addition at same temperature. The dielectric constant of $ZnNb_2O_{6}$ ceramics with CuO was increased with sintering temperature and CuO addition. While the quality factor of the $ZnNb_2O_{6}$ ceramics with lwt% CuO depended on sinterability, the quality factor of $ZnNb_2O_{6}$ with 3wt% and 5wt% CuO depended on second Phase due to the CuO addition. The optimum dielectric Properties of $\varepsilon$$_{r}$ = 21.73 Q${\times}$f = 19,276 were obtained from the condition of 3wt% CuO addition and sintering temperature of $1025^{\circ}C$(3hr).

• Journal of the Korean Chemical Society
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• v.38 no.9
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• pp.632-639
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• 1994

For dye sensitization of zinc oxide in the visible region, copper phthalocyanine(CuPc) and sunfast yellow(SY) were adsorbed in two layers on zinc oxide powder. The adsorption structures of $\alpha-and\beta-CuPc$ on zinc oxide were investigated by photoacoustic, IR and Raman spectra. The ${\alpha}-and\;{\beta}$-polymorphs exhibited dimeric structure or molecular aggregates. The surface photovoltaic effect of ZnO/CuPc/SY showed higher than that of ZnO/SY/CuPc and $ZnO/\beta-CuPc/SY$ indicated better photosensitive than $ZnO/\alpha-CuPc/SY.$ Electrophotographic sensitivity of $ZnO/\beta-CuPc/SY$ was $$S_{1/2}=2.99{\times}10^{-2}(erg/cm^2)^{-1}$ at 630 nm.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.406-406
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• 2012

ZnO는 큰 여기자 결합 에너지, 낮은 유전 상수, 높은 화학적 안정도를 가지고 있기 때문에 전자소자 및 광소자로 많이 응용되고 있다. 여러 가지 불순물을 주입하여 ZnO의 전기적 및 광학적 성질을 향상시키기 위한 연구가 진행되고 있다. 여러 가지 불순물 중에 Zn와 물리적 및 화학적 성질이 유사한 Cu를 도핑하여 전기화학적성장(electrochemical deposition) 방법으로 ITO가 코팅된 유리 기판 위에 ZnO 박막을 성장하였다. Cu를 도핑하여 ZnO박막을 성장한 결과 구조적으로 ZnO 박막이 나노로드 형태에서 부분적으로 나노세선 또는 나노로드 형태로 변화함을 확인하였다. 광류미네센스 측정 결과는 벌크 ZnO 박막과 비교하여 Cu를 도핑함으로써 ZnO 나노세선이 3.37 eV의 에너지를 가지는 파장의 크기가 줄어들었고 여러 방향으로 ZnO 나노세선이 형성됨을 알 수 있었다. Cu를 도핑함으로써 ZnO 나노세선의 구조적 변화는 크기 않으나 에너지 밴드갭을 변화할 수 있음을 알 수 있었다. ZnO 나노세선의 광학적 성질을 Cu를 도핑하여 변화할 수 있음을 관측하였으며 불순물을 도핑하여 밴드갭을 변화하여 전자소자 및 광소자를 제작하는 기초지식으로 사용할 수 있다.

• Electrical & Electronic Materials
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• v.9 no.9
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• pp.925-932
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• 1996

Using the d.c. 2-probe method, we have examined the temperature dependence of CO gas sensitivity of pure ZnO and ZnO CuO thick films prepared by the acqueous precipitation. At 200ppm CO gas, pure ZnO thick film shows the maximum sensitivity of -6.5 at 300.deg. C. On the other hand, the maximum sensitivity of 1-5 mol% and 10-15 mol% CuO added ZnO thick films are 2.8-2.5 and 1.6, respectively. Therefore, the sensitivity of pure ZnO thick film is about three times larger than those of ZnO-CuO thick films. We suggest that the promotion of maximum sensitivity is caused by low packing and the increase of chemical adsorptions for $O_{2}$ gas.

• Journal of the Korean Magnetics Society
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• v.7 no.1
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• pp.19-24
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• 1997

Composition and process conditions for low temperature sintered NiCuZn ferrites were investigated, so as to fabricate multilayered chip inductor. The$Fe_2O_3$ deficiency for low temperature sintering was decreased with NiO contents of NiCuZn ferrites. The permeability of NiCuZn ferrites can be controlled in the range of 12~562 with the variation of NiO and $Co_3O_4$ contents. The $Q_{max} $ frequency of NiCuZn ferrites was decreased from 50 MHz to 3 MHz linearly with permeability increase from 60 to 560. The relation between the $Q_{max}$ frequency(Y) and permeability(X) of NiCuZn ferrites was expressed with the following empirical equation, logY=4.2-1.4logX.

• Journal of the Korean Ceramic Society
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• v.34 no.10
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• pp.1074-1082
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• 1997

Microstructure and permeability as a function of sintering temperature and composition were studied on the Ni$\delta$Cu0.4-$\delta$Zn0.6Fe2O4 ($\delta$=0, 0.1, 0.2, 0.3, 0.4) which was prepared by Cu2+ substitution for Ni2+ in Ni.0.4Zn0.6Fe2O4, then followed by 8 wt% CuO and 1wt% Bi2O3 as sintering aids. It was found that NiCuZn ferrite in which Cu2+ is substituted for Ni2+ is more effective in reduction of sintering temperature than Ni.0.4Zn0.6Fe2O4, containing CuO as a sintering aid. The specimen $\delta$=0.2 sintered at 90$0^{\circ}C$ for 2hr exhibited the highest initial permeability value ($\mu$o=280 at 1Mhz), but the real permeability decreased at the frequency under 10 MHz. EPMA analysis showed that Ni$\delta$Cu0.4-$\delta$Zn0.6Fe2O4 ($\delta$=0.4), sintered at 95$0^{\circ}C$ for 2hrs consisted of three phase regions of Ni.0.3Cu0.1Zn0.6Fe2O4 region, Cu and Bi liquid existed at the 3-point boundary, although the stabilization energy of Ni2+ is higher than that of Cu2+ in B site.