• Proceedings of the KIEE Conference
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• 2002.07c
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• pp.1584-1586
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• 2002

CuIn$Se_2$ (CIS) and related compounds such as Cu($In_xGa_{1-x})Se_2$(CIGS) have been studied by their potential for use in photovoltaic devices. CIS thin film materials which have high absorption coefficient and wide bandgap, have attracted much attention as an alternative to crystalline and amorphous silicon solar cells currently in use. Cu-rich CIGS film have very low resistivity, due to coexistence of the semimetallic $Cu_{2-x}Se$. In-rich CIGS films show high resistivity, since these films are compensated films without the $Cu_{2-x}Se$ phase. Optical properties of the CIGS films also change in accordance with the resistivity for the Cu/(In+Ga) ratio. The Cu-rich films have different spectra from In-rich films in near infrared wavelengths.

• Journal of the Korean Vacuum Society
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• v.6 no.S1
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• pp.122-126
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• 1997

the Cu/polyimide system is known to be the best candidate for a multilevel interconnection system due to the low resistance of Cu and to the low dielectric constant of polyimide respectively. Ion beam mixing of Cu(40nm)/polyimide was carried out at room temperature with 80 keV Ar+ and N2+ form $1.5\times$1015 to 15$\times$1015 ions/cm2. The quantitative adhesion strength was measured by a standard scratch test. X-ray photoelectron spectroscopy and x-ray emission spectrocopy are employed to investigate the chemical bonds and the interlayer compound formation of the films Cu/Al/polyimide showed more adhesion strength than Cu/polyimide after ion beam mixing and N2+ ions are more effective in the adhesion enhancement than Ar+ with the same sample geometry. The XES results shows the formation of interlayer compound of CuAl2O4 which can reflect more adhesive Cu/Al/polyimide which has not been reported previously. The latter results is understood by the fact that N2+ ions produce more pyridinelike moiety, amide group and tertiary amine moiety whcih are known as adhesion promotors.

• Transactions of Materials Processing
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• v.19 no.6
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• pp.357-362
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• 2010

Dry sliding wear behavior of pure Fe and Cu which have BCC and FCC crystal structure, respectively, was investigated. The wear characteristics of the pure metals with different crystal structure were compared. Dry sliding wear tests were carried out using a pin-on-disk wear tester at various loads under the constant sliding speed condition of 0.15 m/s against a silica ball at room temperature. Sliding distance was fixed as 600 m for all wear tests. Wear rate of a specimen was calculated by dividing the weight loss of the specimen after the test by the specific gravity and sliding distance. Worn surfaces and wear debris were analyzed by SEM. The wear of both pure Fe and Cu proceeded with surface deformation, resulting in similar wear rates despite of their structure difference under the current test conditions. Wear rates of both metals were low if the surface deformation due to wear forms thick surface-deformation layer that is strain hardened beneath the wearing surface. The pure Cu specimens showed a lot of oxides on the worn surface when tested at low loads less than 5 N, which resulted in very low wear rate.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.6
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• pp.372-376
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• 2014

We investigated the effect of excess CuO on the sintering behavior, ferroelectric, and piezoelectric properties of lead-free $Bi_{0.5}(Na_{0.82}K_{0.18})_{0.5}TiO_3$ (BNKT) ceramics. The addition of excess CuO was found to greatly contribute to the densification and grain growth, however, excess CuO over 3 mol% was precipitated at grain boundaries after sintering. BNKT with 1~2 mol% CuO in excess sintered at $975^{\circ}C$ showed piezoelectric properties comparable to those of unmodified BNKT sintered at $1,175^{\circ}C$. These results seem meaningful for its application to low cost multilayer actuators (MLAs) because low firing ceramics make it possible to apply less expensive base metals to the inner electrode of MLAs.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2015.11a
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• pp.234-234
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• 2015

Metallic microwires are a promising material for use as a filler in various conductive composite structures. Because of their high anisotropy in shape, a low percolation threshold could be achieved, which is beneficial to a low-cost fabrication and better electrical conductivity even under an extremely low solid content. Here we developed a facile method to fabricate the Cu (core)-Ni (shell) microwires.

• 한국초전도학회:학술대회논문집
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• v.11
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• pp.47-47
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• 2001

• Corrosion Science and Technology
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• v.17 no.4
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• pp.154-165
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• 2018

During the process of sulfur dioxide removal, flue gas desulfurization equipment provides a serious internal corrosion environment in creating sulfuric acid dew point corrosion. Therefore, the utilities must use the excellent corrosion resistance of steel desulfurization facilities in the atmosphere. Until now, the trend in developing anti-sulfuric acid steels was essentially the addition of Cu, in order to improve the corrosion resistance. The experimental alloy used in this study is Fe-0.03C-1.0Mn-0.3Si-0.15Ni-0.31Cu alloys to which Ru, Zn and Ta were added. In order to investigate the effect of $H_2SO_4$ concentration and the alloying elements, chemical and electrochemical corrosion tests were performed. In a low concentration of $H_2SO_4$ solution, the major factor affecting the corrosion rate of low alloy steels was the exchange current density for $H^+/H_2$ reaction, while in a high concentration of $H_2SO_4$ solution, the major factors were the thin and dense passive film and resulting passivation behavior. The alloying elements reducing the exchange current density in low concentration of $H_2SO_4$, and the alloying elements decreasing the passive current density in high concentration of $H_2SO_4$, together play an important role in determining the corrosion rate of Cu-bearing low alloy steels in a wide range of $H_2SO_4$ solution.

• Korean Journal of Materials Research
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• v.24 no.4
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• pp.186-193
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• 2014

A thin Cu seed layer for electroplating has been employed for decades in the miniaturization and integration of printed circuit board (PCB), however many problems are still caused by the thin Cu seed layer, e.g., open circuit faults in PCB, dimple defects, low conductivity, and etc. Here, we studied the effect of heat treatment of the thin Cu seed layer on the deposition rate of electroplated Cu. We investigated the heat-treatment effect on the crystallite size, morphology, electrical properties, and electrodeposition thickness by X-ray diffraction (XRD), atomic force microscope (AFM), four point probe (FPP), and scanning electron microscope (SEM) measurements, respectively. The results showed that post heat treatment of the thin Cu seed layer could improve surface roughness as well as electrical conductivity. Moreover, the deposition rate of electroplated Cu was improved about 148% by heat treatment of the Cu seed layer, indicating that the enhanced electrical conductivity and surface roughness accelerated the formation of Cu nuclei during electroplating. We also confirmed that the electrodeposition rate in the via filling process was also accelerated by heat-treating the Cu seed layer.

• Journal of Korea Foundry Society
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• v.22 no.2
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• pp.82-88
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• 2002

Al-5.5Zn-2.5Mg-l.5Cu semi-solid slurry was prepared by cooling the liquid metal with a low superheat to a solid and liquid co-existing temperature. Relatively round solid particles could be obtained in the slurry through the simple process. The prepared slurry was deformed into the metallic mold by a press and the mechanical properties of obtained specimens were investigated. Mold filling ability of the alloy slurry was also investigated and compared with that of A356 alloy. Al-Zn-Mg-Cu alloy showed lower mold filling ability than A356 alloy probably because small amount of eutectic phase is present and the heat of fusion generated during solidification is smaller than that of A356 alloy.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2005.06a
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• pp.434-437
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• 2005

Chemical Mechanical Polishing (CMP) has become an essential step in the overall semiconductor wafer fabrication technology. In general, CMP is a surface planarization method in which a silicon wafer is rotated against a polishing pad in the presence of slurry under pressure. The polishing pad, generally a polyurethane-based material, consists of polymeric foam cell walls, which aid in removal of the reaction products at the wafer interface. It has been found that the material removal rate of any polishing pad decreases due to the so-called 'pad glazing' after several wafer lots have been processed. Therefore, the pad restoration and conditioning has become essential in CMP processes to keep the urethane polishing pad at the proper friction coefficient and to allow effective slurry transport to the wafer surface. Diamond pad conditioner employs a single layer of brazed bonded diamond crystals. Due to the corrosive nature of the polishing slurry required in low pH metal CMP such as copper, it is essential to minimize the possibility of chemical interaction between very low pH slurry (pH <2) and the bond alloy. In this paper, we report an exceptional protective coated conditioner for in-situ pad conditioning in low pH Cu CMP process. The protective Cr-coated conditioner has been tested in slurry with pH levels as low as 1.5 without bond degradation.