• Progress in Superconductivity and Cryogenics
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• v.14 no.4
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• pp.28-31
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• 2012

We report the solid-liquid phase equilibria on the $GdBa_2Cu_3O_{7-{\delta}}$ (GdBCO) stability phase diagram in low oxygen pressures ($PO_2$) ranging from 1 to 100 mTorr. On the basis of the GdBCO stability phase diagram experimentally determined in low oxygen pressures, the isothermal sections of three different phase fields on log $PO_2$ vs. 1/T diagram were schematically constructed within the $Gd_2O_3-Ba_2CuO_y-Cu_2O$ ternary system, and the solid-liquid phase equilibria in each phase field were described. The invariant points on the phase boundaries include the following three reactions; a pseudobinary peritectic reaction of $GdBCO{\leftrightarrow}Gd_2O_3$ + liquid ($L_1$), a ternary peritectic reaction of $GdBCO{\leftrightarrow}Gd_2O_3+GdBa_6Cu_3O_y$ + liquid ($L_2$), and a monotectic reaction of $L_1{\leftrightarrow}GdBa_6Cu_3O_y+L_2$. A conspicuous feature of the solid-liquid phase equilibria in low $PO_2$ regime (1 - 100 mTorr) is that the GdBCO phase is decomposed into $Gd_2O_3+L_1$ or $Gd_2O_3+GdBa_6Cu_3O_y+L_2$ rather than $Gd_2BaCuO_5+L$ well-known in high $PO_2$ like air.

• Transactions on Electrical and Electronic Materials
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• v.5 no.3
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• pp.109-112
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• 2004

In this study, in order to develop the low temperature sintering ceramics for ultrasonic vibrator, Pb(Sb$\_$$\frac{1}{2}$/Nb$\_$$\frac{1}{2}$/) O$_3$-Pb(Ni$\_$1/3/Nb$\_$2/3/)O$_3$-Pb(Zr$\_$0.48/Ti$\_$0.52/)O$_3$ ceramics were manufactured as a function of the amount of CuO addition, and their dielectric and piezoelectric characteristics were investigated. With increasing CuO addition, the grain size and density increased up to 0.3 wt% CuO addition. Taking into consideration electromechanical coupling factor(k$\_$p/) of 0.53, mechanical quality factor(Q$\_$m/) of 423, dielectric constant($\varepsilon$$\_$r/) of 1,759 and piezoelectric constant(d$\_$33/) of 362pC/N, it could be concluded that 0.5 wt% CuO added composition ceramic sintered at 920$^{\circ}C$ was suitable for ultrasonic vibrator application.

• Korean Journal of Materials Research
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• v.11 no.1
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• pp.20-26
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• 2001

The deposition characteristics of MOCVO Cu using the (hfac)Cu(I) (1,5-DMCOD)(1,1,1,5,5,5-hexafluoro-2,4-pentanedionato Cu(I) 1,5-dimethyl-cyclooctadine) as a precursor have been investigated in terms of the effects of hydrogen and H(hfac) ligand addition with He carrier gas. MOCVD Cu using a Helium carrier gas showed a low deposition rate (20~$125{\AA}/min$) at the substrate temperature range of 180~$230^{\circ}C$. Moreover, the Cu film deposited at 19$0^{\circ}C$ was very thin (~$700{\AA}$) and showed the lowest resistivity value of $2.8{\mu}{\Omega}-cm$. The deposition rate of MOCVD Cu using $H_2$or H(hfac) addition was significantly enhanced especially at the low temperature region (180~$190^{\circ}C$). Furthermore, thinner Cu films (~$500{\AA}$) provided low resistivity (3.6~$2.86{\mu}{\Omega}-cm$). From surface reflectance measurement, very thin films deposited by using different gas system revealed good surface morphology comparable with sputtered Cu film ($300^{\circ}C$, vacuum-anneal). Hence, Cu film using (hfac)Cu(1,5-DMCOD) as a precursor is expected as a good seed layer in the electrochemical deposition process for Cu metallization.

• Korean Journal of Materials Research
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• v.2 no.4
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• pp.263-269
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• 1992

Low-firing dielectric materials with negative small temperature coefficients were investigated. The newly developed materials are based on Ti$O_2$(100-x)/ CuOx(X=1~5wt%) with small amount of Mn$O_2$ additive. The sample without CuO was not sintered at 90$0^{\circ}C$. As CuO content was increased the sample could be sintered at low temperature. However, the dielectric constant was decreased and the dielectric loss was increased. In the case of adding 3wt% CuO and 0.6wt% Mn$O_2$, the dielectric constant and the Q values appeared very high.

• Journal of the Korean Society for Heat Treatment
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• v.8 no.4
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• pp.245-254
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• 1995

The purpose of this study was to examine the effects of low melting point phase(LMPP) on mechanical properties in the Al-Cu-Li-X(In, Be) alloys. This study was performed by the differential scanning calorimetry(DSC), the transmission electron microscope(TEM), hardness test, tensile test and notch tensile test. The shape of LMPP in the specimens homogenized at $570^{\circ}C$ was film type due to remelting at grain boundary during homogenization. Low melting point phases had no effects on mechanical properties in the aging treated materials, because the density of LMPPs was low. Mechanical properties of the aging treated materials were affected by the density of matrix precipitation phases and grain sizes. For the In or In, Be added Al-Cu-Li alloys, the optimum solution treatment temperature was $550^{\circ}C$. The strength of Al-Cu-Li-In-Be $T_6$ treated alloy was higher than that of 2090-$T_8$ alloy.

• Journal of the Korean Vacuum Society
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• v.15 no.1
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• pp.45-49
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• 2006

The changes in the optical anisotropy of the clean Cu(110) and the oxygen covered Cu(110) surfaces due to Cu growth have been studied by reflectance difference spectroscopy(RDS). We have monitored the growth mode of Cu atoms on Cu(110) and Cu(110)-(2XlO surfaces at 250K and checked the surfactant effect of oxygen during the Cu growth. For Cu grow on Cu(110) and Cu(110)-(2Xl)O surface at low temperature, we observed evidence for the layer-by-layer growth mode with change of 4.25eV peak intensity.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2004.05a
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• pp.6-8
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• 2004

The NdBaCuO superconductor samples were zone-melted in low oxygen partial pressure (1 % $O_2$＋99%Ar). The zone-melting temperature was decreased about 12$0^{\circ}C$ from 1, 06$0^{\circ}C$, the zone-melting temperature in air. Thus the loss of liquid phase (BaCu $O_2$and CuO) was reduced during the zone-melting process. The content of non-superconducting phase Nd422 in zone-melted NdBaCuO samples was clearly decreased and, therefore, the substitution of Nd for Ba was occurred. The superconductivity of zone-melted N $d_{1＋x}$B $a_{2－x}$C $u_3$ $O_{y}$prepared under low oxygen partial pressure was distinctively improved.d.d.d.

• Journal of the Microelectronics and Packaging Society
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• v.21 no.4
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• pp.63-68
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• 2014

For a nanoscale Cu/low-k wafer, inter-layer dielectric (ILD) and metal layers peelings, cracks, chipping, and delamination are the most common dicing defects by traditional diamond blade saw process. Sidewall void in sawing street is one of the key factors to bring about cracks and chipping. The aim of this research is to evaluate laser grooving & mechanical sawing parameters to eliminate sidewall void and avoid top-side chipping as well as peeling. An ultra-fast pico-second (ps) laser is applied to groove/singulate the 28-nanometer node wafer with Cu/low-k dielectric. A series of comprehensive parametric study on the recipes of input laser power, repetition rate, grooving speed, defocus amount and street index has been conducted to improve the quality of dicing process. The effects of the laser kerf geometry, grooving edge quality and defects are evaluated by using scanning electron microscopy (SEM) and focused ion beam (FIB). Experimental results have shown that the laser grooving technique is capable to improve the quality and yield issues on Cu/low-k wafer dicing process.

• Journal of Radiation Protection and Research
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• v.42 no.1
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• pp.63-68
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• 2017

Background: The combined effect of the low energy electron (LEE) irradiation and $Cu^{2+}$ ion on DNA damage was investigated. Materials and Methods: Lyophilized pBR322 plasmid DNA films with various concentrations (1-15 mM) of $Cu^{2+}$ ion were independently irradiated by monochromatic LEEs with 5 eV. The types of DNA damage, single strand break (SSB) and double strand break (DSB), were separated and quantified by gel electrophoresis. Results and Discussion: Without electron irradiation, DNA damage was slightly increased with increasing Cu ion concentration via Fenton reaction. LEE-induced DNA damage, with no Cu ion, was only 6.6% via dissociative electron attachment (DEA) process. However, DNA damage was significantly increased through the combined effect of LEE-irradiation and Cu ion, except around 9 mM Cu ion. The possible pathways of DNA damage for each of these different cases were suggested. Conclusion: The combined effect of LEE-irradiation and Cu ion is likely to cause increasing dissociation after elevated transient negative ion state, resulting in the enhanced DNA damage. For the decrease of DNA damage at around 9-mM Cu ion, it is assumed to be related to the structural stabilization due to DNA inter- and intra-crosslinks via Cu ion.

• Korean Journal of Materials Research
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• v.23 no.9
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• pp.525-530
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• 2013

This study investigated the continuous cooling transformation, microstructure, and mechanical properties of highstrength low-alloy steels containing B and Cu. Continuous cooling transformation diagrams under non-deformed and deformed conditions were constructed by means of dilatometry, metallographic methods, and hardness data. Based on the continuous cooling transformation behaviors, six kinds of steel specimens with different B and Cu contents were fabricated by a thermomechanical control process comprising controlled rolling and accelerated cooling. Then, tensile and Charpy impact tests were conducted to examine the correlation of the microstructure with mechanical properties. Deformation in the austenite region promoted the formation of quasi-polygonal ferrite and granular bainite with a significant increase in transformation start temperatures. The mechanical test results indicate that the B-added steel specimens had higher strength and lower upper-shelf energy than the B-free steel specimens without deterioration in low-temperature toughness because their microstructures were mostly composed of lower bainite and lath martensite with a small amount of degenerate upper bainite. On the other hand, the increase of Cu content from 0.5 wt.% to 1.5 wt.% noticeably increased yield and tensile strengths by 100 MPa without loss of ductility, which may be attributed to the enhanced solid solution hardening and precipitation hardening resulting from veryfine Cu precipitates formed during accelerated cooling.