• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.163-163
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• 2008

반도체 소자가 고집적화 되고 고속화를 필요로 하게 됨에 따라, 기존에 사용되었던 알루미늄이나 텅스텐보다 낮은 전기저항, 높은 electro-migration resistance으로 미세한 금속배선 처리가 가능한 Cu가 주목받게 되었다. 하지만 과잉 디싱 현상과 에로젼을 유도하여 메탈라인 브리징과 단락을 초래할 있고 Cu의 단락인 islands를 남김으로서 표면 결함을 제거하는데 효과적이지 못다는 단점을 가지고 있었다. 특히 평탄화 공정시 높은 압력으로 인하여 Cu막의 하부인 ILD막의 다공성의 low-k 물질의 손상을 초래 할 수 있는 문제점을 해결하기 위하여 기존의 CMP에 전기화학을 결합시킴으로서 낮은 하력에서의 Cu 평탄화를 달성 할 수 있는 기존의 CMP 기술에 전기화학을 접목한 새로운 개념의 ECMP (electrochemical-mechanical polishing) 기술이 생겨나게 되었다. 따라서 본 논문에서는 최적화된 ECMP 공정을 위하여 I-V곡선과 CV법을 이용하여 active. passive. trans-passive 영역의 전기화학적 특징을 알아보았고. Cu막의 표면 형상을 알아보기 위해 Scanning Electron Microscopy (SEM) 측정과 Energy Dispersive Spectroscopy (EDS) 분석을 통해 금속 화학적 조성을 조사하였다.

• Journal of Korea Foundry Society
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• v.26 no.1
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• pp.40-45
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• 2006

Most of the work reported concerned the semi-solid processing of low melting point alloys, and in particular light alloys of aluminum and magnesium. The purpose of this paper is to develop a semi-solid microstructure of Cu alloys using electromagnetic stirring applicable for squirrel cage rotor of induction motor. The size of primary solid particle and the degree of sphericity as a function of the variation in cooling rate, stirring speed, and holding time were observed. By applying electromagnetic stirring, primary solid particles became finer and rounder relative to as-cast sample. As the input frequency increased from 30 to 40 Hz, particle size decreased. The size of primary solid particle was found to be decreased with increasing cooling rate. Also, it decreased with stirring up to 3 minutes but increased above that point. The degree of sphericity became closer to be 1 with hold time. Semi-solid microstructure of Cu alloys, one of the high melting point alloys, could be controlled by electromagnetic stirring.

• Journal of Surface Science and Engineering
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• v.49 no.6
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• pp.575-579
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• 2016

The metal mesh films with thickness of 1.0, 1.5, $2.0{\mu}m$ were prepared by photolithography using Ag, Al, and Cu metals. Every metal films were showed C(111) preferred orientation and Ag showed the lowest resistivity and followed by Al and Cu. The transmittance of almost films were higher than 90%. But, the Ag film with thickness of $2.0{\mu}m$ was delaminated during photolithography process due to low adhesion. So, Cu and Ti metal films were introduced under Ag film to improve adhesion property. The Cu film showed higher adhesion properties compared to Ti film. Furthermore, the Ti films that deposited on Ag film showed higher acid resistance.

• Journal of the Korean Society of Safety
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• v.24 no.4
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• pp.22-27
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• 2009

In this paper, the minuteness structure, piezoelectric, and dielectric characteristics of $0.95{Pb(Sb_{1/2}Nb_{1/2})_{0.02})_{0.02}(Ni_{1/3}Nb_{2/3})_{0.13}(Zr_{0.48}Ti_{0.52})_{0.85}}O_3+0.05Pb(CO_{1/2}W_{1/2})O_3+0.3%$ $MnO_2+0.3wt%$ CuO ceramics has been systematically investigated as a function of the sintering temperature after manufacturing the specimens with a general method. This study will be very helpful as basic data for developing ceramic materials, More study in a soon time for improving stability of temperature, effect of adds and stability and reality of frequency with improved production condition for specimens will give a powerful potentiality as a applied material of dielectric ceramics.

• Journal of the Microelectronics and Packaging Society
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• v.19 no.4
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• pp.19-23
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• 2012

Silicon substrate for light emitting diodes (LEDs) has been the tendency of LED packaging for improving power consumption and light output. In this study, a low cost and high throughput Si through via fabrication has been demonstrated using a wet etching process. Both a wet etching only process and a combination of wet etching and dry etching process were evaluated. The silicon substrate with Si through via fabricated by KOH wet etching showed a good electrical resistance (${\sim}5.5{\Omega}$) of Cu interconnection and a suitable thermal resistance (4 K/W) compared to AlN ceramic substrate.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.78-78
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• 2007

In semiconductor devices, Cu has been used for the formation of multilevel metal interconnects by the damascene technique. Also lower dielectric constant materials is needed for the below 65 nm technology node. However, the low-k materials has porous structure and they can be easily damaged by high down pressure during conventional CMP. Also, Cu surface are vulnerable to have surface scratches by abrasive particles in CMP slurry. In order to overcome these technical difficulties in CMP, electro-chemical mechanical planarization (ECMP) has been introduced. ECMP uses abrasive free electrolyte, soft pad and low down-force. Especially, electrolyte is an important process factor in ECMP. The purpose of this study was to characterize KOH and $KNO_3$ based electrolytes on electro-chemical mechanical. planarization. Also, the effect of additives such as an organic acid and oxidizer on ECMP behavior was investigated. The removal rate and static etch rate were measured to evaluate the effect of electro chemical reaction.

• 한국초전도학회:학술대회논문집
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• v.9
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• pp.388-391
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• 1999

Well oriented Bi2212 superconductor thick films were formed successfully on a copper substrate by liquid reaction between a Cu-free precursor and Cu tape method in which Cu-free BSCO powder mixture was' printed on copper plate and heat-treated. And we examined the effect of heat-treatment atmosphere for the superconducting properties and microstructure of Bi2212. The composition of Cu-free BSCO powder mixture was Bi$_2O_3$ : SrCO$_3$ : CaCO$_3$ = 1.2~2 : 1 : 1 and the heat-treatment for the superconducting formation reaction was performed in air, oxygen, nitrogen and low oxygen pressure. At heat-treatment temperature, the printing layer partially melt by reacting with CuO of the oxidizing copper plate, and the nonsuperconducting phases present in the melt are typically Bi-free phases and Cu-free phases. Among the nonsuperconducting phases, it is known that the (Sr,Ca)CuO$_3$ phase restrain the formation of the Bi2212 superconducting phase. Because a kind of the nonsuperconducting phases is controled by the oxygen partial pressure, the optimum condition in which the remnants of the second phases don't leave in the fully processed conductor was determined by XRD and the critical tempera to re (Tc) analysis.

• Transactions of Materials Processing
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• v.23 no.6
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• pp.386-391
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• 2014

In the current study, Al-Mn-Zn alloys are strip-cast and used as the base alloy for the core of aluminum clad sheets used in automotive condenser fins. Transition elements such as Cu and Cr are added to the base core alloy in order to improve the properties of the clad sheets. The AA4343/Al-Mn-Zn-X(X: Cu, Cr)/AA4343 clad sheets are fabricated by roll bonding and further cold-rolled to a thickness of 0.08 mm. Clad sheets were intermediately annealed during cold rolling at $450^{\circ}C$ in order to obtain 40% reduction at the final thickness. Tensile strength and sag resistance of the clad sheets are improved by Cu additions to the core alloy, while corrosion resistance is also increased. Cr-additions to the clad sheets enhance sag resistance and provide low enough corrosion, although tensile strength is not improved. The effect of Cu and Cr additions on the properties of the clad sheets is elucidated by microstructural analysis.

• Progress in Superconductivity
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• v.6 no.1
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• pp.13-18
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• 2004

High-.ate in-situ$ YBa_2$Cu$Cu_3$$O_{7-x}$ (YBCO) film growth was demonstrated by means of the electron beam co-evaporation. Even though our oxygen pressure is low, ∼$5 ${\times}$10^{-5}$ Torr, we can synthesize as-grown superconducting YBCO films at a deposition rate of around 10 nm/s. Relatively high temperatures of around 90$0^{\circ}C$ was necessary in this process so far, and it suggests that this temperature at a given oxygen activity allows a Ba-Cu-O liquid formation along with an YBCO epitaxy. Local critical current density shows a clear correlation with local resistivity. Homogeneous transport properties with a large critical current density ($4 ∼ 5 MA/\textrm{cm}^2$ at 77K, 0T) are observed in top faulted region while it is found that the bottom part carries little supercurrent with a large local resistivity. Therefore, it is possible that thickness dependence of critical current density is closely related with a topological variation of good superconducting paths and/or grains in the film bodies. The information derived from it may be useful in the characterization and optimization of superconducting films for electrical power and other applications.

• Proceedings of the KIEE Conference
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• 1991.11a
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• pp.269-273
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• 1991

High Tc oxide superconductor with a Tc above 100 K has been successfully prepared by solid state reaction method in added-Pb BiSrCaCuO system. As compared with 123 compound, the formation reaction of the high Tc requires long time heat treatment. It is due to the transformation from the low Tc phase to high Tc phase. The sintering just below the melting point of the calcined powder mixture is effective on the formation of the high Tc phase in BiSrCaCuO system to be added with Pb. The growth of the high Tc superconducting phase has a thin plate shape, which is characterized by the c parameter of 37${\AA}$. The formation kinetics is also investigated in the samples with different Bi/Pb ratio and the 30% Pb addition is most preferable for the formation of the high Tc phase. The formation of the high Tc phases is delayed by the excessive addition of Pb. The lattice parameter(c) of the unit cell(both the low and high Tc phases) is increased with increase of Pb.