• 한국재료학회지
• /
• 제14권4호
• /
• pp.246-250
• /
• 2004

We have investigated the effects of boron added to Cu film on the Cu-Ti reaction and microstructural evolution of Cu(B) alloy film during annealing of Cu(B)/Ti/$SiO_2$/Si structure. The result were compared with those of Cu(B)/$SiO_2$ structure to identify the effects of Ti glue layers on the Boron behavior and the result grain growth of Cu(B) alloy. The vacuum annealing of Cu(B)/Ti/$SiO_2$ multilayer structure allowed the diffusion of B to the Ti surface and forming $TiB_2$ compounds at the interface. The formed $TiB_2$ can act as a excellent diffusion barrier against Cu-Ti interdiffusion up to $800^{\circ}C$. Also, the resistivity was decreased to $2.3\mu$$\Omega$-cm after annealing at $800^{\circ}C$. In addition, the presence of Ti underlayer promoted the growth Cu(l11)-oriented grains and allowed for normal growth of Cu(B) film. This is in contrast with abnormal growth of randomly oriented Cu grains occurring in Cu(B)/$SiO_2$ upon annealing. The Cu(B)/Ti/$SiO_2$ structure can be implemented as an advanced metallization because it exhibits the low resistivity, high thermal stability and excellent diffusion barrier property.

• 한국재료학회지
• /
• 제14권12호
• /
• pp.829-834
• /
• 2004

Annealing of $Cu(B)/Ti/SiO_2$ in vacuum has been carried out to investigate the effects of Ti underlayer on microstructure in $Cu(B)/Ti/SiO_2$ structures. For comparison, $Cu(B)/Ti/SiO_2$ structures was also annealed in vacuum. Three different temperature dependence of Cu growth can be seen in $Cu(B)/Ti/SiO_2$; B precipitates- pinned grain growth, abnormal grain growth, normal grain growth. The Ti underlayer having a strong affinity for B atoms reacts with the out-diffused B to the Ti surface and forms titanium boride at the Cu-Ti interface. The formation of titanium boride acts as a sink for the out-diffusion of B atoms. The depletion of boron in grain boundaries of Cu films, as results of the rapid diffusion of B along the grain boundaries and the insufficient segregation of B to the grain boundaries, induces grain boundaries to migrate and causes the abnormal grain growth. The increased bulk diffusion coefficient of B within Cu grains can be responsible for the normal grain growth occurring in the annealed $Cu(B)/Ti/SiO_2\;at\;600^{\circ}C$. In contrast, the $Cu/SiO_2$ structures show only the abnormal growth of grains and their sizes increasing as the temperature increases above $400^{\circ}C$.

• 열처리공학회지
• /
• 제7권4호
• /
• pp.253-261
• /
• 1994

Transformation behavior and superelastic behavior of Ti-Ni-Cu alloys with various Cu content has been investigated by means of electrical resistivity measurement, X-ray diffraction, tensile test and transmission electron microscopy. Two types of heat treatment are given to the specimens: i) Solutions treatment. ii) thermo-mechanical treatment. The transformation sequence in solution treated Ti-Ni-Cu Alloys substituted by Cu for Ni up to 5at.% occurs to $B2{\rightleftarrows}B19^{\prime}$ and it proceeds in two stages by addition of 10at.%Cu, i. e, $B2{\rightleftarrows}B19{\rightleftarrows}B19^{\prime}$. Also, it has been found that Ti-30Ni-20Cu alloy transformed in one stage : $B2{\rightleftarrows}B19$. The thermo-mechanically treated Ti-47Ni-3Cu alloy transformed in two stages: B2${\rightleftarrows}$rhomboheral phase${\rightleftarrows}B19^{\prime}$, while transformation sequence in Ti-45Ni-5Cu and Ti-40Ni-10Cu alloy transformed as same as solution treated specimens. The critical stress for inducing slip deformation in solution treated and thermo-mechanically treated Ti-40Ni-10Cu alloy is about 90MPa and 320Mpa respectively.

• 열처리공학회지
• /
• 제5권3호
• /
• pp.149-156
• /
• 1992

Transformation behavior and reversible shape memory effct of Ti-Ni-Cu alloys with various Cu content has been investigated by means of electrical resistivity measurement, differential scanning calorimetry. X-ray diffraction and strain gage sensor. The transformation sequence in Ti-Ni-Cu alloys substituted by Cu for Ni up to 5at.% occurs to $B2{\leftrightarrow}B19^{\prime}$ and it proceeds in two stages by addition of 10 at.%Cu. i.e. $B2{\leftrightarrow}B19{\leftrightarrow}B19^{\prime}$. But the content of Cu increases up to 20at.%, it has been transformed in one stage ; $B2{\leftrightarrow}B19$. The shape change of Ti-40Ni-10Cu alloy which was constrain aged in circular form bended in $B2{\leftrightarrow}B19$ transformation but it spreaded out in $B19{\leftrightarrow}B19^{\prime}$ transformation. The amount of reversible shape change (${\Delta}{\varepsilon}$) of Ti-47Ni-3Cu alloy constrain aged at $400^{\circ}C$ after solution treatment has a maximum value of about $5.6{\times}10^{-3}$, but that of cold rolled and constrain aged specimens exhibits a little value independent of Cu concentrations.

• 한국재료학회지
• /
• 제15권11호
• /
• pp.735-740
• /
• 2005

The phase transformation of Ni-B diffusion barrier by Cu diffusion was studied. The Ni-B diffusion barrier, thickness of 10(Inn, was electrolessly deposited on the electroplated Cu interconnect. The specimens were annealed either in Ar atmosphere or in $H_2$ atmosphere from $300^{\circ}C\;to\;800^{\circ}C$ for 30min, respectively. Although the Ni-B coated specimens showed the decomposition of $Ni_3B$ above $400^{\circ}C$ in both Ar atmosphere and $H_2$ atmosphere, Ni-B powders did not show the decomposition of $Ni_3B$. The $Ni_3B$ was decomposed to Ni and B in hi atmospherr: and the metallic Ni formed the solid solution with Cu and the free B was oxidized to $B_2O_3$. However, both the boron hydride and free B were not observed in the diffusion barrier after the annealing in $H_2$ atmos There. These results revealed that the decomposition of $Ni_3B$ by Cu made the Cu diffusion continued toward the Ni-B diffusion barrier.

• 대한임상검사과학회지
• /
• 제50권2호
• /
• pp.205-210
• /
• 2018

단삼의 성분인 salvianolic acid B는 다양한 생리활성이 알려져 있다. 특히 항산화 효과는 간세포, 신경세포를 포함한 다양한 세포유형에서 보호효과가 있다고 보고되었다. 하지만 ferulic acid와 같이 항산화제로 여겨지는 몇몇 페놀성 물질은 특정 전이 금속이 있으면 산화작용을 하며 이것이 항암 효능을 설명하기도 한다. 본 실험에서 salvianolic acid B가 $Cu^{2+}$ 환경에서 산화작용을 하는지 알아보았다. salvianolic acid B와 $Cu^{2+}$를 동시 처리하면 supercoilded 형태의 DNA가 open circular 혹은 linear 형태로 바뀌었으나 salvianolic acid B 혹은 $Cu^{2+}$를 단독 처리 했을 때는 그렇지 않았다. $Cu^+$에만 특정적인 킬레이터 neocuproine을 이용하여 salvianolic acid B가 $Cu^{2+}$를 $Cu^+$로 환원시킴을 알았으며 $H_2O_2$를 물과 산소로 분해하는 catalase를 처리하면 DNA 분해가 일어나지 않았다. 활성산소종 중 하나인 $H_2O_2$는 생체분자 특히 DNA를 공격하여 정상기능을 수행하지 못하게 한다. 정리하면 salvianolic acid B에 의한 $Cu^{2+}$의 환원은 $H_2O_2$를 생성하며 $H_2O_2$는 DNA 분해를 일으킨다. 이런 결과는 salvianolic aicd B의 항암효과가 salvianolic acid의 $H_2O_2$ 생성 때문일 수 있다는 작은 단서를 줄 수 있으며 이는 좀 더 실험이 이뤄져야 한다.

• 한국분말야금학회:학술대회논문집
• /
• 한국분말야금학회 2005년도 추계학술강연 및 발표대회강연 및 발표논문 초록집
• /
• pp.43-43
• /
• 2005

• 한국결정성장학회지
• /
• 제5권4호
• /
• pp.386-393
• /
• 1995

SHS법에 의한 경사기능재료를 제조하는 방법을 조사하여 그 방법에 따라 $TiB_2/Cu$ 경사기능재료를 제조하고자 한다. 이때 원료분말을 구리에 침적하면서 조성의 구배를 주고, 가압 성형한 후 합성을 하기 위한 반응조에 넣었다. 이 시료를 점화시켜 정수압 하에서 합성과 동시에 가압하였다. 이렇게 제조된 $TiB_2/Cu$ 경사기능재료의 결정상, 미세주고 등을 관찰하여 조성의 경사를 확인할 수 있었다.

• 마이크로전자및패키징학회지
• /
• 제19권1호
• /
• pp.67-73
• /
• 2012

본 연구는 고밀도 미세회로 형성 및 원가절감에 유리한 페이스트의 인쇄/건조, 프리프레그 관통 및 적층 공법을 이용한 $B^2it$ 공법을 이용하여 FMC 기판을 제조한 후 열적 스트레스에 대한 범프의 계면반응 연구를 수행하였다. 열적 스트레스에 대한 Ag 범프의 접합 신뢰성을 조사하기 위해 열충격시험, 열응력시험을 수행한 후 전기적 특성 및 단면분석을 통해 균열발생 여부를 조사하였다. 또한 Ag 범프와 Cu 랜드의 접합계면에 대한 계면반응 특성을 분석하기 위해 주사전자현미경(SEM), 에너지분산스펙트럼(EDS) 및 FIB분석을 수행하여 계면에서 발생되는 확산반응을 분석하였다. 이러한 결과를 바탕으로 열적 스트레스에 대한 Ag 페이스트 범프/Cu 랜드 접합계면에서 계면반응에 의해 형성된 Ag-Cu 합금층을 확인할 수 있었다. 이러한 합금층은 Cu ${\rightarrow}$ Ag 보다, Ag ${\rightarrow}$ Cu 로의 확산속도가 빠르기 때문에, Cu층에서의 (Ag, Cu) 합금층이 보다 많이 관찰되었으며, 합금층이 Ag범프의 계면 접합력 향상에 기여하는 것을 알 수 있었다.

• 한국재료학회지
• /
• 제14권8호
• /
• pp.552-557
• /
• 2004

Thin Ni-B films, 1 ${\mu}m$ thick, were electrolessly deposited on Cu bus electrode fabricated by electro deposition. The purpose of these films is to encapsulate Cu electrodes for preventing Cu oxidation and to serve as a diffusion barrier against copper contamination of dielectric layer in AC-plasma display panel. The layers were heat treated at $580^{\circ}C$(baking temperature of dielectric layer) with and without pre-annealing at $300^{\circ}C$($Ni_{3}B$ formation temperature) for 30 minutes. In the layer with pre-annealing, amount of Cu diffusion was lower about 5 times than that in the layer without pre-annealing. The difference of Cu concentration could be attributed to Cu diffusion before $Ni_{3}B$ formation at grain boundaries. However, the diffusion behavior of the layer with pre-annealing was similar to that of the layer without pre-annealing after $Ni_{3}B$ formation. With increasing annealing time, Cu concentration of both layers increased due to grain growth.