• Journal of Sensor Science and Technology
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• v.29 no.3
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• pp.156-161
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• 2020

In this study, hierarchical mesoporous CuO spheres, ZnO flowers, and heterojunction CuO/ZnO nanostructures were fabricated via a facile hydrothermal method. The as-prepared materials were characterized in detail using various analytical methods such as powder X-ray diffraction, micro Raman spectroscopy, X-ray photoelectron spectroscopy, field-emission scanning electron microscopy, and transmission electron microscopy. The obtained results are consistent with each other. The H₂S-sensing characteristics of the sensors fabricated based on the CuO spheres, ZnO flowers, and CuO/ZnO heterojunction were investigated at different temperatures and gas concentrations. The sensor based on ZnO flowers showed a maximum response of ~141 at 225 ℃. The sensor based on CuO spheres exhibited a maximum response of 218 at 175 ℃, whereas the sensor based on the CuO/ZnO nano-heterostructure composite showed a maximum response of 344 at 150 ℃. The detection limit (DL) of the sensor based on the CuO/ZnO heterojunction was ~120 ppb at 150 ℃. The CuO/ZnO sensor showed the maximum response to H₂S compared with other interfering gases such as ethanol, methanol, and CO, indicating its high selectivity.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.43 no.7
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• pp.1152-1157
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• 1994

The glasses were prpared in the system CuI-CuS12TS-CuS12TO-MoOS13T by rapid quenching technique. These glasses have high ionic conductivities at 2$0^{\circ}C$ in the range of 10S0-1T[S/m], and the conductivities increase with increasing CuI and CuS12TS content. The value of activation energy for dielectric relaxation is nearly identical with that for conductivity. The cole-Cole parameter $\beta$ for representation of the distribution of dielectric relaxation times varies the range from 0.92 to 0.96. This parameter has a weak dependence on the composition of glass, and is independent of temperature. The correlation factors P for the glasses shows from 1.1 to 1.7.

• Journal of the Korean Magnetics Society
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• v.4 no.1
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• pp.48-51
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• 1994

We have studied the room temperature anisotropy in the high $T_{c}$ superconductor $YBa_{2}Cu_{3}O_{7}$ by means of the $^{63}Cu$ nuclear quadrupole resonance (NQR). For the magnetically oriented powder samples, NQR signals were obtained only when the RF magnetic field is applied perpendicular to the direction of the crystalline c-axis. Significant differences in the spin-lattice relaxation times ($T_{1}$) and the lineshapes were observed between the unoriented powder sample and the magnetically oriented sample.

• Journal of Korean Society of Environmental Engineers
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• v.27 no.2
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• pp.163-169
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• 2005

Photocatalytic oxidation of Cu(II)-EDTA has been studied using solar/$TiO_2$ photocatalysis as an energy source. Photocatalysis efficiency on the treatment of Cu(II)-EDTA was investigated using different types of solar collectors as well as by variation of the angles of solar collector solar light intensities, flow rates, and areas of solar collector. effect of $H_2O_2$ and types of $TiO_2$ catalyst on the treatment of Cu(II)-EDTA was also investigated. Removal of Cu(II) and DOC was favorable with a hemispherical collector than with a flat collector Removal of Cu(II) and DOC increased with increasing angles of solar collector up to $38^{\circ}$. Slurry type $TiO_2$ showed four-times higher removal efficiency than immobilized type $TiO_2$. Removal of both Cu(II) and DOC at a clear sky of solar light intensity ranging from 0.372 to $2.265\;mW/cm^2$ was greater than removal at a cloudy day of solar light intensity ranging from 0.038 to $1.129\;mW/cm^2$. From the result of this research that the removal efficiency of Cu(II) and DOC increased as the solar light intensity increased, it can be inferred that quantum yield in the destruction of Cu(II)-EDTA may directly related with the solar light intensity. Removal of Cu(II) increased as increasing the area of solar collector and was similar at lower flow rates white removal of Cu(II) was interfered at higher flow rates. When immobilized $TiO_2$ was used, removal efficiency of Cu(II) increased in the presence of $H_2O_2$ while negligible effect was found in the use of $TiO_2$ slurry.

• Bulletin of the Korean Chemical Society
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• v.9 no.4
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• pp.240-243
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• 1988

Degradation of the 90 K superconductor $YBa_2Cu_3O_{7-{\delta}}$ in water and humid atmosphere were studied and its decomposition products were identified as $BaCO_3$, CuO, $Y_2(CO_3)_3{\cdot}3H_2O$ and $O_2$. XRD analysis, iodometric titration and IR-spectroscopy of the degraded samples suggest that the $YBa_2Cu_3O_{7-{\delta}}$ decomposes in three steps such as the reduction of $Cu^{3+}$ to $Cu^{2+}$, followed by the hydroxylation of $Ba^{2+}$ and $Y^{3+}$ via hydration and finally the formation of carbonates through the uptake of ambient $CO_2$.

• Korean Journal of Materials Research
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• v.17 no.9
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• pp.484-488
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• 2007

Mo(Ti) alloy and pure Cu thin films were subsequently deposited on $SiO_2-coated$ Si wafers, resulting in $Cu/Mo(Ti)/SiO_2$ structures. The multi-structures have been annealed in vacuum at $100-600^{\circ}C$ for 30 min to investigate the outdiffusion of Ti to Cu surface. Annealing at high temperature allowed the outdiffusion of Ti from the Mo(Ti) alloy underlayer to the Cu surface and then forming $TiO_2$ on the surface, which protected the Cu surface against $SiH_4＋NH_3$ plasma during the deposition of $Si_3N_4$ on Cu. The formation of $TiO_2$ layer on the Cu surface was a strong function of annealing temperature and Ti concentration in Mo(Ti) underlayer. Significant outdiffusion of Ti started to occur at $400^{\circ}C$ when the Ti concentration in Mo(Ti) alloy was higher than 60 at.%. This resulted in the formation of $TiO_2/Cu/Mo(Ti)\;alloy/SiO_2$ structures. We have employed the as-deposited Cu/Mo(Ti) alloy and the $500^{\circ}C-annealed$ Cu/Mo(Ti) alloy as gate electrodes to fabricate TFT devices, and then measured the electrical characteristics. The $500^{\circ}C$ annealed Cu/Mo($Ti{\geq}60at.%$) gate electrode TFT showed the excellent electrical characteristics ($mobility\;=\;0.488\;-\;0.505\;cm^2/Vs$, on/off $ratio\;=\;2{\times}10^5-1.85{\times}10^6$, subthreshold = 0.733.1.13 V/decade), indicating that the use of Ti-rich($Ti{\geq}60at.%$) alloy underlayer effectively passivated the Cu surface as a result of the formation of $TiO_2$ on the Cu grain boundaries.

• Journal of the Korean Chemical Society
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• v.31 no.6
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• pp.509-519
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• 1987

The tetradentate Schiff base ligand, 3,4-bis(salicylidene diimine) toluene, have been prepared by the reaction of salicylaldehyde with 3,4-diaminotoluene by Duff method. The Schiff base ligand reacts with Ni(II), Co(II), and Cu(II) ions to form new complexes, [Ni(o-BSDT)${\cdot}(H_2O)_2$], [Co(o-BSDT)${\cdot}(H_2O)$], and [Cu(o-BSDT)]. It seems that Ni(II) and Ni(II) complexes are hexacoordinated with the Schiff base ligand and two molecules of water, while the Cu(II) complexes are tetracoordinated with the Schiff base. The mole ratio of tetradentate Schiff base ligand to metals was found to be 1 : 1. The redox chemistry of these complexes was investigated by polarography and cyclic voltammetry with glassy carbon electrode in DMSO with 0.1M TEAP${\cdot}$[Ni(o-BSDT)${\cdot}(H_2O)_2$] hav EC reaction mechanisms which undergo a irreversible electron transfer followed by a fast chemical reaction. [Co(o-BSDT)${\cdot}(H_2O)_2$] undergoes a reduction of Co(II) to Co(I) and a oxidation of Co(II) to Co(III), and [Cu(o-BSDT)] undergoes a reduction of Cu(II) to Cu(I).

• Progress in Superconductivity
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• v.11 no.2
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• pp.141-146
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• 2010

Phase stability diagram and boundary of a- and c-axis orientation of $SmBa_2Cu_3O_{7-y}$ (SmBCO) thin films grown by pulsed laser deposition (PLD) were reported with studies based on x-ray diffraction [1]. Four different samples are systematically analyzed: normal c-axis oriented orthorhombic $SmBa_2Cu_3O_{7-y}$, a-axis oriented $SmBa_2Cu_3O_{7-y}$, c-axis oriented orthorhombic $SmBa_2Cu_3O_{7-y}$ with $Sm_2BaCuO_5$ phase, and a mixture with c-axis oriented orthorhombic $SmBa_2Cu_3O_{7-y}$ and anomalously long-c tetragonal $SmBa_2Cu_3O_x$. Raman scattering spectroscopy equipped with polarization analysis elucidates the crystal orientation and the origin of the growth of the materials. It indicates that the technique can be used for quality control of conductor manufacturing processes as well as for enhancement of the materials properties.

• Journal of the Korean Magnetics Society
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• v.7 no.1
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• pp.19-24
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• 1997

Composition and process conditions for low temperature sintered NiCuZn ferrites were investigated, so as to fabricate multilayered chip inductor. The$Fe_2O_3$ deficiency for low temperature sintering was decreased with NiO contents of NiCuZn ferrites. The permeability of NiCuZn ferrites can be controlled in the range of 12~562 with the variation of NiO and $Co_3O_4$ contents. The $Q_{max} $ frequency of NiCuZn ferrites was decreased from 50 MHz to 3 MHz linearly with permeability increase from 60 to 560. The relation between the $Q_{max}$ frequency(Y) and permeability(X) of NiCuZn ferrites was expressed with the following empirical equation, logY=4.2-1.4logX.

• Korean Journal of Materials Research
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• v.7 no.9
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• pp.781-788
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• 1997

Cu/EMC 계면 접착력에 미치는 산화의 규명하기 위해 리드프레임의 저온 산화에 대하여 조사하였다. 이전의 보고와 달리, 저온에서도 Cu$_{2}$O위에 CuO산화물이 형성되어 Cu/Cu$_{2}$O(NiO)/Cu(NiO)/air의 산화층 구조를 나타내었다. Cu/EMC 계면 접착력은 산화가 진행됨에 따라 산화 초기에 급격히 증가하다 최대값에 이르고, 이후의 계속적인 산화로 감소하는 양상을 보였다. 접착력은 산화 온도나 리드프레임의 종류보다 산화막의 두께에 밀접한 상관 관계를 나타내었다. 최대 계면 접착력이 얻어지는 산화막의 두께는 리드프레임의 종류보다 산화막의 두께에 밀접한 상관 관계를 나타내었다. 최대 계면 접착력이 얻어지는 산화막의 두께는 리드프레임의 종류와 무관하게 대략 20nm 와 30nm 사이에 존재하였다. 산화 초기의 접착력 증가는 산화로 인한 EMC에 대한 젖음성의 증가와 기계적 고착 효과의 증가에 기인하였다. 리드프레임과 EMC의 파괴 표면에 대한 AES, XPS 분석으로 부터, 산화막의 두께가 얇을 때에는 Cu$_{2}$O//CuO의 계면 파괴 + EMC 자체 파괴가 복합적으로 발생함을 알 수 있었다. 반면에 과도한 산화로 낮을 접착력을 나타내는 시편은 Cu/Cu$_{2}$/O 계면의 파괴를 나타냈다.