• Bulletin of the Korean Chemical Society
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• v.22 no.12
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• pp.1371-1374
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• 2001

Metal doping was adopted to modify TiO2 (P-25) and enhance the photocatalytic degradation of harmful cyanides in aqueous solution. Ni, Cu, Co, and Ag doped TiO2 were found to be active photocatalysts for UV light induced degradation of aqueous cyanides generating cyanate, nitrate and ammonia as main nitrogen-containing products. The photoactivity of Ni doped TiO2 was greatly affected by the state of Ni, that is, the crystal size and the degree of reduction of Ni. The modification effects of some mixed oxides, that is, Ni-Cu/TiO2 were also studied. The activity of Ni-Cu/TiO2 for any ratio of Cu/Ni was higher than that of Ni- or Cu-doped TiO2, and the catalyst at the Cu/Ni ratio of 0.3 showed the highest activity for cyanide conversion.

• Proceedings of the KAIS Fall Conference
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• 2010.11a
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• pp.356-358
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• 2010

Cuprous oxide ($Cu_2O$)를 기초로 하여 산화 박막 트랜지스터에 대하여 연구를 하였다. 일정한 두께의 cuprous oxide ($Cu_2O$) 박막을 조건별로 열처리 공정을 하고 그에 따른 변화를 측정을 하였다. 그 측정한 결과 중 가장 좋은 열처리 조건으로 열 증착 방식(Vacuum Thermal Evaporation)을 사용하여 cuprous oxide ($Cu_2O$) 비정질 산화 박막 트랜지스터를 제작 및 측정했다.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.49 no.12
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• pp.654-664
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• 2000

Thin films of ZnO are deposited by using an RF magnetron sputtering with varying the substrate temperature(RT~39$0^{\circ}C$) and RF power(50~250W). Cu-doped ZnO(denoted by ZnO:Cu) films have also been prepared by co-spputtering of a ZnO target on which some Cu-chips are attached. Different substrate materials, such as Si, $SiO_{2}/Si$, sapphire, DLC/Si, and poly-diamond/Si, are employed to compare the c-axial growth features of deposited ZnO films. Texture coefficient(TC) values for the (002)-preferential growth are estimated from the XRD spectra of deposited films. Optimal ranges of RF powers and substrate temperatures for obtaining high TC values are determined. Effects of Cu-doping conditions, such as relative Cu-chip sputtering areas, $O_{2}/(Ar+O_{2})$ mixing ratios, and reactor pressures, on TC values, electrical resistivities, and relative Cu-compositions of deposited ZnO:Cu films have been systematically investigated. XPS study shows that the relative densities of metallic $Cu(Cu^{0})$ atoms and $CuO(Cu^{2+})$-phases within deposited films may play an important role of determining their electrical resistivities. It should be noted from the experimental results that highly resistive(> $10^{10}{\Omega}cm$ ZnO films with high TC values(> 80%) can be achieved by Cu-doping. SAW devices with ZnO(or Zn):Cu)/IDT/$SiO_{2}$/Si configuration are also fabricated to estimate the effective electric-mechanical coupling coefficient($k_{eff}^{2}$) and the insertion loss. It is observed that the devices using the Cu-doped ZnO films have a higher $k_{eff}^{2}$ and a lower insertion loss, compared with those using the undoped films.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.675-678
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• 2004

[ $CuAlO_2$ ] was used as P-type transparent conducting oxide. $CuAlO_2$ ceramics was obtained from heating a stoichiometric mixture of $Cu_2O$ and $Al_2OH_3$ at $1200^{\circ}C$ for 6h. $CuAlO_2$ ceramics were doped by the rate of 0, 5, 7 and 10% of the $BeSO_4{\cdot}4H_2O$. Sintered ceramics were investigated by X-ray diffraction (XRD) and electrical measurements. The room temperature conductivity of the ceramics, which were doped with $BeSO_4{\cdot}4H_2O$ 5wt% was of the order of $3.19\times10^{-3}S\;cm^{-1}$, and the density was $4.98g/cm^3$. Therefor the conductivity and density in $BeSO+4{\cdot}4H_2O$ 5wt% were better than other cases. Additionally, Seebeck cofficient measurements revealed that these ceramics were p-type semiconductors and the ceramic conductivity increased with the growth temperature.

• Electrical & Electronic Materials
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• v.9 no.9
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• pp.925-932
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• 1996

Using the d.c. 2-probe method, we have examined the temperature dependence of CO gas sensitivity of pure ZnO and ZnO CuO thick films prepared by the acqueous precipitation. At 200ppm CO gas, pure ZnO thick film shows the maximum sensitivity of -6.5 at 300.deg. C. On the other hand, the maximum sensitivity of 1-5 mol% and 10-15 mol% CuO added ZnO thick films are 2.8-2.5 and 1.6, respectively. Therefore, the sensitivity of pure ZnO thick film is about three times larger than those of ZnO-CuO thick films. We suggest that the promotion of maximum sensitivity is caused by low packing and the increase of chemical adsorptions for $O_{2}$ gas.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.913-916
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• 2001

From 1994 the cooperation between NEU of China and MJU of South Korea for study of ReBaCuO (Re=Rare earth elements) superconductors has been carried out. The progress has been got in following projects. Critical current density ($J_c$) of YBaCuO superconductor prepared by Melting Textured Growth (MTG) was improved. In the preparation of textured YBaCuO, 20 wt.% of YBaCuO 211 phase was added, which would be climactic for the microcracks in the textured YBaCuO. The effects of the 211 phase and Ag content on the superconductivity were studied and discussed in detail. The improved $J_c$ value was reached to 8$\times$10^4 A/cm^2 (77K,0T). Single phase $YbBa_{2}Cu_{3}O_{x}$ superconductor was sintered by the traditional powder metallurgical method, and its reaction process was studied. In recent years, NdBaCuO superconductor is being performed. The behavior of $Nd_{4}Ba_{2}Cu_{2}O_{10}$(Nd422 phase) and the solid solubility, x in the superconductor $Nd_{1+x}Ba_{2-x}Cu_{3}O_{y}$ by the heat treatment in the low oxygen partial pressure (1%) or Ar at $950{\circ}C$ were investigated. The zone-melting process was used to make oriented NdBaCuO superconductor in order to increase the critical current density.

• Proceedings of the Materials Research Society of Korea Conference
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• 1994.11a
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• pp.55-55
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• 1994

• Proceedings of the Materials Research Society of Korea Conference
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• 1995.11a
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• pp.74-75
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• 1995

• Bulletin of the Korean Chemical Society
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• v.12 no.5
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• pp.499-504
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• 1991

EPR spectra of the high $T_c$ superconductor $YBa_2Cu_3O_{7-y}$ (YBCO) doped with $Pd^{2+} or Zn^{2+}$ have been measured at several temperatures and dopant concentrations. The spectral intensity of $YBa_2({Cu_{1-x}}{Pd_x})_3O_{7-y}$ is proportional to the dopant concentration. The behavior of $YBa_2(Cu_{1-x}Zn_x)_3O_{7-y}$ is quite different: the spectral intensity remains almost constant up to x=0.10 and then increases rapidly above x=0.10. The results are interpreted in terms of localized and antiferromagnetically spin-paired d holes in both CuO chain and planes. The $Pd_{2+}$ ion substitutes on the CuO chain consisting of "CuOCu dimers", and a $Cu_{2+}$ ion with an unpaired spin is gene rated for each $Pd_{2+}$ ion substituted. On the other hand, $Zn_{2+}$ substitutes on the CuO planes, and all or most of the spins in the two-dimensional plane manage to pair up in the region of low dopant concentration. When the dopant concentration exceeds a certain limit, it becomes more difficult for the spins to find partners, and the number of unpaired spins increases rapidly with increasing dopant concentration. The $Zn_{2+}$ ion is more effective than the $Pd_{2+}$ ion in suppressing the superconductivity of YBCO. This is attributed to the fact that $Zn_{2+}$ substitutes on the CuO planes which are mainly responsible for the superconductivity, while $Pd_{2+}$ substitutes on the CuO chain which is of secondary importance in the superconductivity.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.11a
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• pp.563-566
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• 2000

The effect of CuO and CuO-B $i_2$ $O_3$ additives on microwave dielectric properties of (P $b_{0.45}$C $a_{0.55}$)[F $e_{0.5}$N $b_{0.5}$)$_{0.9}$S $n_{0.1}$] $O_3$were investigated to decrease the sintering temperature for usage of Low Temperature Co-firing Ceramics (LTCC). The (P $b_{0.45}$C $a_{0.55}$)[F $e_{0.5}$N $b_{0.5}$)$_{0.9}$S $n_{0.1}$] $O_3$ceramics was sintered at 11$65^{\circ}C$. In order to decrease the sintering temperature, CuO and Cuo-B $i_2$ $O_3$ were added in the (Pb,Ca)[(Fe,Nb)Sn] $O_3$ with CuO-B $i_2$ $O_3$. For the addition of 0.4 wt.% CuO, the sintered density and the dielectric constant of the ceramics were revealed the maximum values of the 6.06g/c $m^2$ and 83 respectively and temperature coefficient of resonance frequency ($\tau$$_{f}$) shifted to the positive value. As increasing B $i_2$ $O_3$to the (Pb,Ca)[(Fe,Nb)Sn] $O_3$ with CuO-B $i_2$ $O_3$with 0.2 wt.% CuO, the sintered density, the $\varepsilon$$_{r}$ and the Q was decreased, and $\tau$$_{f}$ was minimized at 0.2 wt.% CuO, and 0.2 wt.% B $i_2$ $O_3$. For this composition, dielectric properties were $\varepsilon$$_{r}$ of 81, Q. $f_{0}$ of 4400 GHz, and $\tau$$_{f}$ of 5 ppm/$^{\circ}C$ at sintering temperature of 100$0^{\circ}C$. the relationship between the microstructure and properties of ceramics was studied by X-ray diffraction(XRD), scanning electron microscopy(SEM).copy(SEM).oscopy(SEM).copy(SEM).EM).