• 한국결정학회지
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• 제14권2호
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• pp.79-83
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• 2003

Electrolytic MnO₂ (EMD)의 미세구조를 X선 회절 및 투과전자현미경 분석을 통해 연구하였다. 벌크에 대한 X선 회절 실험은 전헝적인 EMD 재료의 분말 회절패턴을 나타내었다. 투과전자현미경 분석은 EMD가 약 0.2㎛크기의 입자로 이루어져 있고, 각각의 입자가다시 10 nm 정도의 결정립으로 이루어진 이중 미세구조를 가짐을 나타내었다. 나노 결정립에 대한 전자빔 마이크로 회절 분석 결과, EMD 입자는 여러 상의 혼합체로서 약 50%의 Ramsdellite, 30%의 ε-MnO₂, 15%의 Pyrolusite 상으로 이루어져 있음을 확인하였다. 한편, X선 분말 회절패턴 상의 약 67°에 위치한 ｛1120｝ 피크와 (0001) 면에 대한 고분해능 이미지는 ε-MnO₂ 상의 존재를 입증하였다.

• 대한기계학회논문집A
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• 제29권4호
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• pp.511-517
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• 2005

Fretting fatigue is often the root cause of the nucleation of cracks at attachments of structural components. Since fretting fatigue damage accumulation occurs over relatively small volumes, the subsurface cyclic plastic strain is expected to be rather non-uniformly distributed in polycrystalline materials. The scale of the cyclic plasticity and the damage process zones is often on the order of microstructure dimensions. Fretting damage analyses using cyclic crystal plasticity constitutive models have the potential to account for the influence of size, morphology, and crystallographic orientation of grains on fretting damage evolution. Two-dimensional plane strain simulations of fretting fatigue are performed using the cyclic properties of Ti-6Al-4V. The crystal plasticity simulations are compared to an initially isotropic $J_{2}$ theory with nonlinear kinematic hardening as well as to experiments. The influence of initially isotropic versus textured microstructure in the presence of crystallographic slip is studied.

• 한국세라믹학회지
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• 제35권5호
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• pp.505-511
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• 1998

단결정 Si 기판 위에 증착한 Co/Hf과 Co/Nb 이중층으로부터 형성된 Co 실리사이드의 성장기구에 대하여 조사하였다. 두 경우 모두 500$^{\circ}C$ 이상에서 CoSi2가 주로 형성되었으나 그 결정방위의 성장양상은 서로 달랐다. Co/Hf/(100)Si 구조에서는 Si 기판과 에피텍셜 관계를 갖는 결정립과 그렇지 않은 결정립이 서로 혼합되어 성장하였다. 그러나 Co/Nb/(100)Si에서는 처음부터 에피텍셜 관계를 갖지 않는 결정립들만이 형성되었다. 동일한 구조임에도 불구하고 이렇게 내열금속 중간층에 따라 성장된 실리사이드의 결정방위가 달라지는 것으 안정한 반응제어층의 형성 및 고온에서의 그 분해과정과 관련이 있었다. 여러 구성원소들로 이루어진 반응제어층이 고온까지 안정할 경우에는 Co의 확산이동을 균일하게 제어하여 실리사이드의 에피텍셜 성장이 가능하다.

• 한국표면공학회지
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• 제28권6호
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• pp.386-392
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• 1995

The RF planar magnetron sputtering technique was used to fabricate uniform ZnO/$SiO_2$/Si thin films at high growth rate. A detailed crystallographic character of these thin films has been carried oct using XRD, XRC, and SEM. These thin films have the configuration of c-axis orientation perpendicular to $SiO_2$/ Si substrate. The dependence of the thickness of ZnO/$SiO_2$/Si films on applied RF power parameters was also investigated. The crystallinity of films was improved as the substrate temperature was high, RF input power increased, and Ar/$O_2$ ratio decreased. Also, most of ZnO films fabricated on $SiO_2$/Si were suitable for SAW filter since a standard deviation of XRC (002) peak was less than $6^{\circ}$. The presence of the $SiO_2$ layer has a beneficial effect on the crystalline quality of the grown ZnO films.

• 연구논문집
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• 통권31호
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• pp.113-125
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• 2001

Silicon addition in titanium alloys generally results in solid solution hardening by silicon itself and precipitation hardening by titanium silicides. The morphology and distribution of the titanium silicides depend upon the alloy chemistry or the heat treatment condition, and play an important role in improving the mechanical properties of the alloys. In this study, the morphology and crystallographic characteristics of the titanium silicides in the Ti-Fe-Si alloy system were studied. Three types of silicides were found in the alloys; (1) interconnected chain-like silicides at grain boundary, (2) coarse silicides over im, (3) fine silicides smaller than 0.2m. Ti3Si was dominant in cast + HIP condition while Ti5Si3 was dominant in as-cast state. It is recognized that $Ti_5Si_3$$\rightarrow$$Ti_3Si$ transition occurred by the peritectoid reaction and it may be promoted by the pressure during HIP. However, in the case of the fine silicides, $Ti_3Si$ and $Ti_5Si_3$ were found simultaneously even after HIP. Such a fine silicide was found to have a crystallographic orientation relationship with matrix.

• Journal of Electrochemical Science and Technology
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• 제15권3호
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• pp.345-352
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• 2024

The synthesis of Pt nanoparticles and catalytically active materials using the electrochemical top-down approach involves dispersing Pt electrodes in an electrolyte solution containing alkali metal cations and support material powder using an alternating pulsed current. Platinum is dispersed to form particles with a predominant crystallographic orientation of Pt(100) and a particle size of approximately 7.6±1.0 nm. The dispersed platinum particles have an insignificant content of PtO_x phase (0.25±0.03 wt.%). The average formation rate was 9.7±0.5 mg cm^-2 h^-1. The nature of the support (carbon material, metal oxide, carbon-metal oxide hybrid) had almost no effect on the formation rate of the Pt nanoparticles as well as their crystallographic properties. Depending on the nature of the support material, Pt-containing catalytic materials obtained by the electrochemical top-down approach showed good functional performance in fuel cell technologies (Pt/C), catalytic oxidation of CO (Pt/Al₂O₃) and electrochemical oxidation of methanol (Pt/TiO₂-C) and ethanol (Pt/SnO₂-C).

• 한국재료학회지
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• 제26권4호
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• pp.207-211
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• 2016

Ti films were deposited on glass substrates under various preparation conditions in a chamber of two-facing-target type dc sputtering; after deposition, the electric resistivity values were measured using a conventional four-probe method. Crystallographic orientations and microstructures, including the texture and columnar structure, were also investigated for the Ti films. The morphological features, including the columnar structures and surface roughness, are well explained on the basis of Thornton's zone model. The electric resistivity and the thermal coefficient of the resistivity vary with the sputtering gas pressure. The minimum value of resistivity was around 0.4 Pa for both the $0.5{\mu}m$ and $3.0{\mu}m$ thick films; the apparent tendencies are almost the same for the two films, with a small difference in resistivity because of the different film thicknesses. The films deposited at high gas pressures show higher resistivities. The maximum of TCR is also around 0.4 Pa, which is the same as that obtained from the relationship between the resistivity and the gas pressure. The lattice spacing also decreases with increasing sputtering gas pressure for both the $0.5{\mu}m$ and $3.0{\mu}m$ thick films. Because they are strongly related to the sputtering gas pressures for Ti films that have a crystallographic anisotropy that is different from cubic symmetry, these changes are well explained on the basis of the film microstructures. It is shown that resistivity measurement can serve as a promising monitor for microstructures in sputtered Ti films.

• 한국재료학회지
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• 제25권11호
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• pp.630-635
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• 2015

The fatigue strength of a nickel-base superalloy was studied. Stress-controlled fatigue tests were carried out at $700^{\circ}C$ and 5 Hz using triangular wave forms. In this study, two kinds of testing procedures were adopted. One is the conventional tension-zero fatigue test(R = 0). The other was a procedure in which the maximum stress was held at 1000 MPa and the minimum stress was diverse from zero to 1000 MPa at 24 and $700^{\circ}C$. The results of the fatigue tests at $700^{\circ}C$ indicate that the fracture mechanism changed according to both the mean stress and the stress range. At a higher stress range, ${\gamma}^{\prime}$ precipitates are sheared by a/2<110> dislocation pairs coupled by APB. Therefore, in a large stress range, the deformation occurred by shearing of ${\gamma}^{\prime}$ by a/2<110> dislocations, which brought about crystallographic shear fracture. As the stress range was decreased, the fracture mode gradually changed from crystallographic shear fracture to gradual growth of fatigue cracks. At an intermediate stress range, as it became more difficult for a/2<110> dislocation pairs to shear ${\gamma}^{\prime}$ particles, cracks started to propagate in the matrix, avoiding the harder ${\gamma}^{\prime}$ particles. High mean stress induced creep deformation, that is, ${\gamma}^{\prime}$ particles were sheared by {111}<112> slip systems, which led to the formation of stacking faults in the precipitates. Thus, the change in fracture mechanism brought about the inversion of the S-N curves.

• 한국결정학회지
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• 제5권2호
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• pp.93-99
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• 1994

K2O/3MOOS/0.SBB03 융제를 사용하여 TSSG 법으로 육성한 Md:Yal3(BO3)4 (NYAB) 단결정의 결정외형 및 표면형상을 연구하였다. <100>과 <120> 종자정을 사용한 경우는 서로 다른 크기의 프리즘 면들과 (101) 면들이 발달하였고 <001> 종자정을 사용하였을 때는 (001) 면이 함께 발달하였다. 종자정의 방향이 <100>또는 <120> 일때 프리즘 면 위에 성장구룽이 많이 형성되었으나, <001> 일때는 이웃하는 (101) 면에 평행한 줄무늬가 형성 되었다. (101) 면은 이차원 핵생성에 의한 성장이 지배적이고, <001> 종지정을 사용할 때 발달하는 (001) 면은 나선형 전위에 의한 성장이 지배적이었다. 종자정의 방향은 성장외형을 변화시키고 성장외형과 결정의 질을 결정하는 중요한 성장변수로 작용하였다.

• 한국세라믹학회지
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• 제34권4호
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• pp.373-379
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• 1997

A study on the deposition and characterization of BaTiO3 thin films on MgO-buffered Si(100) substrates by sputtering was conducted. The MgO buffer layers were investigated as a function of deposition temperature. At lower substrate temperature, the MgO layers were not fully crystalline, but a crystallized MgO layer with (001) preferred orientation was obtained at the substrate temperature of $700^{\circ}C$. Partially (00ι) or (h00) textured BaTiO3 films were obtained on Si(100) with the MgO buffer layer grown at 700ι. While, randomly oriented BaTiO3 films with large-scale cracks on the surface were made without the MgO layer. The crystallographic orientation, morphology and electrical properties between the BaTiO3 films on Si with and without the MgO layer were compared using the BaTiO3 film on MgO(100) single crystal substrate as a reference system. Also the favorable role of the MgO layer as a buffer for growing of oriented BaTiO3 films on Si substrates was confirmed.