• Journal of the Korea Academia-Industrial cooperation Society
• /
• v.17 no.9
• /
• pp.502-507
• /
• 2016

Vanadium dioxide, $VO_2$, is a thermochromic material that exhibits a reversible metal-insulator phase transition at $68^{\circ}C$, which accompanies rapid changes in the optical and electronic properties. To decrease the transition temperature around room temperature, a number of studies have been performed. The phase transition temperature of 1D nanowire $VO_2$ with a 100 nm diameter was reported to be approximately $29^{\circ}C$. In this study, 1D or 2D nanostructured $VO_2$ was grown using the vapor transport method. Vanadium dioxide has a different morphology with the same growth conditions for different substrates. The 1D nanowires $VO_2$ were grown on a Si substrate ($Si{\setminus}SiO_2$(300 nm), whereas the 2D & 3D nanostructured $VO_2$ were grown on an exfoliated graphene nanosheet. The crystallographic properties of the 1D or 2D & 3D nanostructured $VO_2$, which were grown by thermal CVD, and exfoliated-transferred graphene nanosheets on a Si wafer which was used as substrate for the vanadium oxide nanostructures, were analyzed by Raman spectroscopy. The as-grown vanadium oxide nanostructures have a $VO_2$ phase, which are confirmed by Raman spectroscopy.

• Journal of the Korean Chemical Society
• /
• v.38 no.9
• /
• pp.621-627
• /
• 1994

Two crystal structures of dehydrated, $Ag^{+}$ and $Ca^{2+}$-exchanged zeolite A treated at $250^{\circ}C$ with 0.15 torr of Cs vapor have been determined by single-crystal X-ray diffraction technique in the cubic space group $Pm{\bar\3m$ at $21(1)^{\circ}C$ (a = 12.344(2) $\AA$ and 12.304(2) $\AA$). Their structures were refined to the final error indices, R (weighted), of 0.091 with 180 reflections, and 0.093 with 179 reflections, respectively, for which I > $3\sigma(I).$ In each structure, Cs species are found at four different crystallographic sites: 3 $Cs^{+}$ ions per unit cell are located at 8-ring centers, ca. 6.81∼7.14 $Cs^{+}$ ions are found on opposite 6-rings on threefold axes in the large cavity, ca. 1.93∼2.03 $Cs^{+}$ ions are found on threefold axes in the sodalite unit, and 0.53∼0.66 $Cs^{+}$ ions lie on opposite 4-rings. Also, ca. 4.12∼4.27 Ag atoms are located near the center of the large cavity. In these structures, excess cesium atoms in a unit cell are associated with other $Cs^{+}$ ions on a single threefold axis to form the linear cationic cluster $(Cs_4)^{3+}$. By blocking 8-rings, the $Cs^{+}$ ions may have prevented silver atoms from migrating out of the structure. The Ag atoms are likely to have formed hexasilver clusters at the centers of the large cavities. Each hexasilver cluster is stabilized by coordination to 14 $Cs^{+}$ ions.

• Bulletin of the Korean Chemical Society
• /
• v.17 no.9
• /
• pp.794-798
• /
• 1996

Solid solutions of the nonstoichiometric Dy1-xSrxCoO3-y system with the compositions of x=0.00, 0.25, 0.50, 0.75, and 1.00 have been synthesized by the solid state reaction at 1000 ℃ under atmospheric air pressure. The crystallographic structures of the solid solutions are analyzed by the powder X-ray diffraction patterns at room temperature. The analyses assign the compositions of x=0.00 and 0.25 to the orthorhombic system with space group of Pbnm/D2h16, the compositions of x=0.50 and 0.75 to the tetragonal system like a typical SrCoO2.86, and the composition of x=l.00 or SrCoO2.50 to the brownmillerite type system with space group of I**a. The reduced lattice volumes increase with x value due to the larger radius of Sr2+ ion than that of Dy3+ ion. The mole ratio of Co4+ ion to total Co ion with mixed valence state between Co3+ and Co4+ ions at B sites or τ value has been determined by an iodometric titration. All the samples except for the DyCoO3 compound show the mixed valnce state and thus the composition of x=0.50 has the maximum τ value in the system. The oxygen vacancies increasing with x value are randomly distributed over the crystal lattice except for the composition of x=l.00 which have the ordering of the oxygen vacancies. The nonstoichiometric chemical formulas of the Dy1-xSrxCo3+1-τCo4+τO3-(x-τ)/2 system are formulated from the x, τ, and y values. The electrical conductivity in the temperature range of 100 to 900 K increases with τ value linearly because of positive holes of the Co4+ ions in π* band as a conducting carrier. The activation energy of the x=0.50 as Ea=0.17 eV is minimum among other compouds. Broad and high order transition due to the overlap between σ* and π* bands broadened by the thermal activation is observed near 1000 K and shows a low temperature-semiconducting behavior. Magnetic properties following the Currie-Weiss law show the low to high spin transition in the cobaltate perovskite. Especially, the composition of x=0.75 presents weak ferromagnetic behavior due to the Co3+-O2--Co4+ indirect superexchange interaction.

• Bulletin of the Korean Chemical Society
• /
• v.17 no.7
• /
• pp.631-637
• /
• 1996

The structures of fully dehydrated Ca2+- and Rb+-exchanged zeolite X, Ca31Rb30Si100Al92O384(Ca31Rb30-X; a=25.009(1) Å) and Ca28Rb36Si100Al92O384(Ca28Rb36-X; a=24.977(1) Å), have been determined by single-crystal X-ray diffraction methods in the cubic space group Fd&bar{3} at 21(1) ℃. Their structures were refined to the final error indices R1=0.048 and R2=0.041 with 236 reflections for Ca31Rb30-X, and R1=0.052 and R2=0.043 with 313 reflections for Ca28Rb36-X; I>3σ(I). In both structures, Ca2+ and Rb+ ions are located at six different crystallographic sites. In dehydrated Ca31Rb30-X, sixteen Ca2+ ions fill site I, at the centers of the double 6-rings (Ca-O=2.43(1) Å and O-Ca-O=93.3(3)°). Another fifteen Ca2+ ions occupy site II (Ca-O=2.29(1) Å, O-Ca-O=119.5(5)°) and fifteen Rb+ ions occupy site II opposite single six-rings in the supercage; each is 1.60 Å from the plane of three oxygens (Rb-O=2.77(1) Å and O-Rb-O=91.1(4)°). About two Rb+ ions are found at site II', 1.99 Å into sodalite cavity from their three-oxygen plane (Rb-O=2.99(1) Å and O-Rb-O=82.8(4)°). The remaining thirteen Rb+ ions are statistically distributed over site III, a 48-fold equipoint in the supercages on twofold axes (Rb-O=3.05(1) Å and Rb-O=3.38(1) Å). In dehydrated Ca28Rb36-X, sixteen Ca2+ ions fill site I (Ca-O=2.41(1) Å and O-Ca-O=93.6(3)°) and twelve Ca2+ ions occupy site II (Ca-O=2.31(1) Å, O-Ca-O=119.7(4)°). Sixteen Rb+ ions occupy site II; each is 1.60 Å from the plane of three oxygens (Rb-O=2.81(1) Å and O-Rb-O=90.6(3)°) and four Rb+ ions occupy site II'; each is 1.88 Å into sodalite cavity from their three-oxygen plane (Rb-O=2.99(1) Å and O-Rb-O=83.8(2)°). The remaining sixteen Rb+ ions are found at III site in the supercage (Rb-O=2.97(1) Å and Rb-O=3.39(1) Å). It appears that Ca2+ ions prefer sites I and II in that order, and that Rb+ ions occupy the remaining sites. Rb+ ions are too large to be stable at site I, when they are competing with other smaller cations like Ca2+ ions.

• Journal of the Korea Academia-Industrial cooperation Society
• /
• v.20 no.6
• /
• pp.80-85
• /
• 2019

Vanadium dioxide is a well-known metal-insulator phase transition material. Lots of researches of vanadium redox flow batteries have been researched as large scale energy storage system. In this study, vanadium oxide($VO_x$) thin films were applied to cathode for lithium ion battery. The $VO_x$ thin films were deposited on Si substrate($SiO_2$ layer of 300 nm thickness was formed on Si wafer via thermal oxidation process), quartz substrate by RF magnetron sputter system for 60 minutes at $500^{\circ}C$ with different RF powers. The surface morphology of as-deposited $VO_x$ thin films was characterized by field-emission scanning electron microscopy. The crystallographic property was confirmed by Raman spectroscopy. The optical properties were characterized by UV-visible spectrophotometer. The coin cell lithium-ion battery of CR2032 was fabricated with cathode material of $VO_x$ thin films on Cu foil. Electrochemical property of the coin cell was investigated by electrochemical analyzer. As the results, as increased of RF power, grain size of as-deposited $VO_x$ thin films was increased. As-deposited thin films exhibit $VO_2$ phase with RF power of 200 W above. The transmittance of as-deposited $VO_x$ films exhibits different values for different crystalline phase. The cyclic performance of $VO_x$ films exhibits higher values for large surface area and mixed crystalline phase.

• Journal of the Korea Academia-Industrial cooperation Society
• /
• v.20 no.4
• /
• pp.458-463
• /
• 2019

Palladium (Pd) is widely used as a catalyst and noxious gas sensing materials. Especially, various researches of Pd based hydrogen gas sensor have been studied due to the noble property, Pd can be adsorbed hydrogen up to 900 times its own volume. In this study, palladium oxide (PdO) nanostructures were grown on Si substrate ($SiO_2(300nm)/Si$) for 3 to 5 hours at $230^{\circ}C{\sim}440^{\circ}C$ using thermal chemical vapor deposition system. Pd powder (source material) was vaporized at $950^{\circ}C$ and high purity Ar gas (carrier gas) was flown with the 200 sccm. The surface morphology of as-grown PdO nanostructures were characterized by field-emission scanning electron microscopy(FE-SEM). The crystallographic properties were confirmed by Raman spectroscopy. As the results, the as-grown nanostructures exhibit PdO phase. The nano-cube structures of PdO were synthesized at specific substrate temperatures and specific growth duration. Especially, PdO nano-cube structrures were uniformly grown at $370^{\circ}C$ for growth duration of 5 hours. The PdO nano-cube structures are attributed to vapor-liquid-solid process. The nano-cube structures of PdO on graphene nanosheet can be applied to fabricate of high sensitivity hydrogen gas sensor.

• Bulletin of the Korean Chemical Society
• /
• v.15 no.3
• /
• pp.236-241
• /
• 1994

The crystal structures of $Cd_6-A$ evacuated at $2{\times}10^{-6}$ Torr and 750$^{\circ}$C (a=12.216(l) ${\AA}$), and of the product of its reaction with Rb vapor (a= 12.187(l) ${\AA}$), have been determined by single-crystal x-ray diffraction techniques in the cubic space group Pm$\bar{3}$m at 21(l)$^{\circ}$C. Their structures were refined to the final error indices, $R_1$=0.055 and $R_2$=0.067 with 191 reflections, and $R_1$=0.066 and $R_2$=0.049 with 90 reflections, respectively, for which I>3${\sigma}$(I). In dehydrated $Cd_6-A$, six $Cd^{2+}$ ions are found at two different threefold-axis sites near six-oxygen ring centers. Four $Cd^{2+}$ ions are recessed 0.50 ${\AA}$ into the sodalite cavity from the (111) plane at O(3), and the other two extend 0.28 ${\AA}$ into the large cavity from this plane. Treatment at 250 $^{\circ}$C with 0.1 Torr of Rb vapor reduces all $Cd^{2+}$ ions to give $Rb_{13.5^-}$A. Rb species are found at three crystallographic sites: three $Rb^+$ ions lie at eight-oxygen-ring centers, filling that position, and ca. 10.5 $Rb^+$ ions lie on threefold axes, 8.0 in the large cavity and 2.5 in the sodalite cavity. In this structure, ca. 1.5 Rb species more than the 12 $Rb^+$ ions needed to balance the anionic charge of zeolite framework are found, indicating that sorption of $Rb^0$ has occurred. The occupancies observed can be most simply explained by two "unit cell" compositions, $Rb_{12^-}A{\cdot}Rb$ and $Rb_{12^-}A{\cdot}2Rb$, of approximately equal population. In sodalite cavities, $Rb_{12^-}A{\cdot}Rb$ would have a $(Rb_2)^+$ cluster and $Rb_{12^-}A{\cdot}2Rb$ would have a triangular $(Rb_3)^+$ cluster. Each of the atoms of these clusters must bind further through a six-oxygen ring to a large cavity $Rb^+$ to give $(Rb_4)^{3+}$ (linear) and $(Rb_6)^{4+}$ (trigonal). Other unit-cell compositions and other cationic cluster compositions such as $(Rb_8)^{n+}$ may exist.

• Bulletin of the Korean Chemical Society
• /
• v.10 no.3
• /
• pp.243-247
• /
• 1989

Two crystal structures of dehydrated $Ag^+\;and\;Ca^{2+}$ exchanged zeolite A, $Ag_2Ca_$5-A, reacting with 0.01 Torr of Cs vapor at $200^{\circ}C$ for 2 hours and 0.1 Torr of Cs vapor at $250^{\circ}C$ for 48 hours, respectively, have been determined by single crystal X-ray diffraction techniques. Their structures were solved and refined in the cubic space group Pm3m at $21(1)^{\circ}C$. The stoichiometry of first crystal was $Ag_2Ca_5$-A (a = 12.294(1)${\AA}$), indicating that Cs vapor did not react with cations in zeolite A and that of second crystal was $Ag_2Cs_{10}$-A (a = 12.166(1)${\AA}$), indicating that all $Ca^{2+}$ ions were reduced by Cs vapor and replaced by $Cs^+$ ions. Full-matrix least-squares refinements of $Ag_2Ca_5-A\;and\;Ag_2Cs_{10}$-A has converged to the final error indices, $R_1\;=\;0.041\;and\;R_2$ = 0.048 with 227 reflections, and $R_1\;=\;0.117\;an\;n\;fdd\;R_2$ = 0.120 with 167 reflections, respectively, for which I > $3{\sigma}$(I). In the structure of $Ag_2Ca_5$-A, both $Ag^+$ ions and $Ca^{2+}$ ions lie on two crystal symmetrically independent threefold axis sites on the 6-rings; $2\;Ag^+$ ions are recessed 0.33 ${\;AA}$ from the (111) planes of three O(3) oxygens and 5 $Ca^{2+}$ ions lie on the nearly center of each 6-oxygen planes. In the structure of $Ag_2Cs_{10}-A,\;Cs^+$ ions lie on the 5 different crystallographic sites. 3 $Cs^+$ ions lie at the centers of the 8-rings at sites of D4h symmetry. 6 $Cs^+$ ions lie on the threefold axes of unit cell: $4\;Cs^+$ ions are found deep in the large cavity and 2 $Cs^+$ ions are found in the sodalite cavity. One $Cs^+$ ion is found in the large cavity near a 4-ring.

• Journal of Ginseng Research
• /
• v.45 no.4
• /
• pp.465-472
• /
• 2021

Background: Ginseng can help regulate brain excitability, promote learning and memory, and resist cerebral ischemia in the central nervous system. Ginsenosides are the major effective compounds of Ginseng, but their protein targets in the brain have not been determined. Methods: We screened proteins that interact with the main components of ginseng (ginsenosides) by affinity chromatography and identified the 14-3-3 ζ protein as a potential target of ginsenosides in brain tissues. Results: Biolayer interferometry (BLI) analysis showed that 20(S)-protopanaxadiol (PPD), a ginseng saponin metabolite, exhibited the highest direct interaction to the 14-3-3 ζ protein. Subsequently, BLI kinetics analysis and isothermal titration calorimetry (ITC) assay showed that PPD specifically bound to the 14-3-3 ζ protein. The cocrystal structure of the 14-3-3 ζ protein-PPD complex showed that the main interactions occurred between the residues R56, R127, and Y128 of the 14-3-3 ζ protein and a portion of PPD. Moreover, mutating any of the above residues resulted in a significant decrease of affinity between PPD and the 14-3-3 ζ protein. Conclusion: Our results indicate the 14-3-3 ζ protein is the target of PPD, a ginsenoside metabolite. Crystallographic and mutagenesis studies suggest a direct interaction between PPD and the 14-3-3 ζ protein. This finding can help in the development of small-molecular compounds that bind to the 14-3-3 ζ protein on the basis of the structure of dammarane-type triterpenoid.

• Proceedings of the Korea Association of Crystal Growth Conference
• /
• 1996.06a
• /
• pp.75-87
• /
• 1996

This review is presented under the following headings: 1.Introduction 1.1 Brief review of the properties of AlN 1.2 Historical survey of work on ceramic and single crystal AlN 2.Thermochemical background 3.Crystal growth 4.Doping 5.Potential applications and future work The known properties of AlN which make it of interest for various are discussed briefly. The properties include chemical stability, crystal structure and lattice constants, refractive indices and other optical properties, dielectric constant, surface acoustic wave velocity and thermal conductivity. The history of work in single crystals, thin films and ceramics are outlined and the thermochemistry of AlN reviewed together with some of the relevant properties of aluminium and nitrogen; the problems encountered in growing crystals of AlN are shown to arise directly from these thermochemical relationships. Methods have been reported in the literature for growing AlN crystals from melts, solution and vapour and these methods are compared critically. It is proposed that the only practicable approach to the growth of AlN is by vapour phase methods. All vapour based procedures share the share the same problems: $.$the difficulty of preventing contamination by oxygen & carbon $.$the high bond energy of molecular nitrogen $.$the refractory nature of AlN (melting point~3073K at 100ats.) $.$the high reactivity of Al at high temperatures It is shown that the growth of epitactic layers and polycrystalline layers present additional problems: $.$chemical incompatibility of substrates $.$crystallographic mismatch of substrates $.$thermal mismatch of substrates The result of all these problems is that there is no good substrate material for the growth of AlN layers. Organometallic precursors which contain an Al-N bond have been used recently to deposit AlN layers but organometallic precursors gave the disadvantage of giving significant carbon contamination. Organometallic precursors which contain an Al-N bound have been used recently to deposit AlN layers but organometallic precursors have the disadvantage of giving significant carbon contamination. It is conclude that progress in the application of AlN to optical and electronic devices will be made only if considerable effort is devoted to the growth of larges, pure (and particularly, oxygen-free) crystals. Progress in applications of epi-layers and ceramic AlN would almost certainly be assisted also by the availability of more reliable data on the pure material. The essential features of any stategy for the growth of AlN from the vapour are outlined and discussed.