• 제목/요약/키워드: Crystallization treatment

검색결과 323건 처리시간 0.026초

Struvite 결정화 공정을 이용한 새우가공폐수처리 (Treatment of shrimp processing wastewater using struvite crystallization process)

  • 정병곤
    • 수산해양기술연구
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    • 제52권3호
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    • pp.271-275
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    • 2016
  • Recently, pollution problem in coastal water has become more serious and pollution including red tide serves as a main reason for reduction of fishes resources. Particularly, nutrients such as nitrogen and phosphorus are the most serious pollutants. Normally, biological wastewater treatment process is used in removing such nutrients. However, it is difficult to adopt the biological wastewater treatment process to a small-scale fish processing factory in case of using seawater as wash water. Thus, removing nutrients through struvite crystallization is investigated in this study for treating shrimp processing wastewater. Experiments were conducted by varying molar ratio of $Mg^{2+}:NH^4-N:PO^4-P$ from 1:1:1 to 2:1:1. It can be concluded that optimum molar ratio is 1:1:1. Struvite crystallization process is compared with chemical coagulation process using PAC and struvite crystallization process is proven as the more effective process in removing nutrients from wastewater. In view of results obtained from these experiments, struvite crystallization process is a promising method in removing nitrogen and phosphorus from wastewater; however, not so good in removing organics. Thus, struvite crystallization process is suitable as the pre-treatment process in treating shrimp processing wastewater and additional biological process is needed to remove organics.

용철(熔鐵)에서의 가탄(加炭)에 관(關)한 연구(硏究)(1);가탄(加炭)에 미치는 탄소재(炭素材)의 결정화열처리(結晶化熱處理)의 영향 (Study on Carbon Pick-up in molten iron (I);Effect of Crystallization heat treatment of Carbon-bearing materials on Carbon Pick-up in molten iron)

  • 조원일;이종남
    • 한국주조공학회지
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    • 제3권3호
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    • pp.159-166
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    • 1983
  • In order to develope domestic carburizers, the experiment was carried out by applying crystallization heat treatment to domestic anthracites and also to foreign products to compare with domestic anthracites.The present work was mainly concerned with the effect of their degree of crystallization of carbon-bearing materials on carbon pick-up in molten iron.Those effects were evaluated by the measurement of density, chemical composition, specific electric resistivity, and X-ray intensity of carbon-bearing materials. Experimental results thus obtained were summurized as follows. 1. The degree of crystallization of domestic anthracites and foreign products was increased with increasing heat treatment temperature. 2. The more degree of crystallization, the shorter the dissolving time of domestic anthracites in molten iron was obtained, while that of foreign products was remained constant. 3. As the degree of crystallization of domestic anthracites and foreign products was increased, the carbon content as well as carbon recovery in molten iron was increased.

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표면 활성화 처리가 비정질 규소 박막의 결정화에 미치는 영향 (The effect of the surface activation treatment on the crystallization of amorphous silicon thin film)

  • 이의석;김영관
    • 한국결정성장학회지
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    • 제9권2호
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    • pp.173-179
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    • 1999
  • 본 연구에서는 비정질 규소 박막의 결정화를 촉진시키기 위하여 표면 활성화 처리의 영향을 관찰하였다. 표면 활성화 방법으로는 습식 연마법(Wet Blasting)과 Nd:YAG 레이저의 빔을 사용하였고, 700~$800^{\circ}C$에서 관상로 열처리를 행하여 고살 결정화에 미치는 영향을 보았다. 결정화 정도의 기준으로는 XRD 분석을 통해 얻은 (111) 피크강도를 이용하였으며, 결정의 품질을 분석하기 위해 Raman 분석을 행하였다. 결정화의 표면 형상에 대한 관찰은 주사전자 현미경(SEM)을 사용하였다. 본 실험 결과 표면 활성화 처리는 비정질 규소박막의 결정화를 촉진하고, 결정의 품질을 향상시키는 것으로 확인되었다. 습식 연마법(Wet Blasting)의 경루 2 Kgf/$\textrm{cm}^2$의 압력이 가장 효과적이었고, 레이저의 에너지는 100~200mJ/$\textrm{cm}^2$가 효과적이었다. 이것은 표면활성화처리를 통하여 비정질 실리콘 박막의 표면에 strain energy가 형성되어 결정화에 필요한 엔탈피에 영향을 미친 효과 때문으로 예상된다.

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질화규소 요업체의 기지상 결정화가 파괴인성에 미치는 영향 (Effect of Crystallization of Matrix Phase on the Fracture Toughness of Silicon Nitride Ceramics)

  • 김남균;김도연;강대갑
    • 한국세라믹학회지
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    • 제24권4호
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    • pp.364-368
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    • 1987
  • The Si5AION7 specimens containing 20% YAG composition have been sintered and then heat treated to induce the crystallization of the matrix glassy phase. Crystallization of YAG phase during the heat treatment was detected from the X-ray diffraction patterns and the consequent changes in room temperature toughness as well as in microstructures were investigated. Almost all the glassy boundary phase were found to crystallize even after 5 minutes of heat treatment and the KC at room temperature decreased accordingly. The results show that the matrix crystallization can be induced by slow cooling from the sintering temperature.

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Effects of Crystallization Behavior on Microwave Dielectric Properties of CaMgSi2O6 Glass-Ceramics

  • Choi, Bo Kyeong;Kim, Eung Soo
    • 한국세라믹학회지
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    • 제50권1호
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    • pp.70-74
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    • 2013
  • Dependence of microwave dielectric properties on the crystallization behaviors of $CaMgSi_2O_6$ (diopside) glass-ceramics was investigated with different heat treatment methods (one and/or two-step). The crystallization behaviors of the specimens, crystallite size and degree of crystallization, were evaluated by differential thermal analysis (DTA), scanning electron microscope (SEM) and X-ray diffraction (XRD) analysis by combined Rietveld and reference intensity ratio (RIR) methods. With an increase in heattreatment temperature, the dielectric constant (K) and the quality factor (Qf) increased due to the increase of the crystallite size and degree of crystallization. The specimens heat-treated by the two-step method had a higher degree of crystallization than the specimens heat-treated by the one-step method, which induced improvement in the quality factor (Qf) of the specimens.

Thermal Properties of 0.9CaMgSi2O6-0.1MgSiO3 Glass-Ceramics

  • Jeon, Chang-Jun;Sun, Gui-Nam;Lee, Jong-Kyu;Ju, Han-Sae;Kim, Eung-Soo
    • 한국세라믹학회지
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    • 제49권1호
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    • pp.111-117
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    • 2012
  • Dependencies of thermal properties on the crystallization behavior of $0.9CaMgSi_2O_6-0.1MgSiO_3$ glass-ceramics were investigated as a function of heat-treatment temperature from $750^{\circ}C$ to $950^{\circ}C$. The crystallization behavior of the specimens depended on the heat-treatment temperature, which could be evaluated by differential thermal analysis (DTA), Fourier transform infrared spectroscopy (FT-IR), and X-ray diffraction (XRD) analysis by the Rietveld-reference intensity ratio (RIR) combined procedure. With an increase of the heat-treatment temperature, the thermal conductivity and thermal diffusivity of the heat-treated specimens increased. These results could be attributed to the increase of crystallization with heat-treatment temperature. However, the specific heat capacity of the heat-treated specimens was not affected by the heat-treatment temperature. The thermal conductivities measured from $25^{\circ}C$ to $100^{\circ}C$ were also discussed for application to lighting-emitting diode (LED) packages and substrate materials.

후열처리에 의한 알루미늄 산화층의 특성 향상 (Enhanced Properties of Aluminum Oxide Layers with Post Heat Treatment)

  • 전윤남;김상준;박지현;정나겸
    • 한국표면공학회지
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    • 제52권5호
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    • pp.275-281
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    • 2019
  • Anodization is widely used to enhance the properties of aluminum, such as hardness, electric resistance, abrasion resistance, corrosion resistance etc. But these properties can be enhanced with additional process. According to the partial crystallization of oxide layer with post heat treatment, enhanced hardness can be expected with partial crystallization. In this study, post heat treatments were applied to the anodized aluminum alloys of Al6061 to achieve the partial crystallization, and crystallizations were evaluated with the reduced breakdown voltages. Interestingly, remarkable enhanced hardness (21~29%), abrasion resistance (26~62%), and reduced breakdown voltage (24~44%) were observed for the sulfuric acid anodized samples when we annealed the anodized samples with 1hour post heat treatment at $360^{\circ}C$. For the Al5052 alloys, a lot of cracks were observed when we applied the post heat treatment.

Crystallization of Amorphous Silicon Films by Field-Aided Lateral Crystallization (FALC) technique at $350^{\circ}C$

  • Park, Kyoung-Wan;Cho, Ki-Taek;Choi, Duck-Kyun
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2002년도 International Meeting on Information Display
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    • pp.548-551
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    • 2002
  • The crystallization of amorphous silicon (a-Si) was achieved using a field aided lateral crystallization (FALC) process at 350 $^{\circ}C$. Under the influence of an electric field, Cu is found to drastically enhance the lateral crystallization velocity of a-Si. When an electric field was applied to the selectively Cu-deposited a-Si film during the heat treatment at temperature as low as 350 $^{\circ}C$, dendrite-shaped crystallization of a-Si progressed toward Cu-free region and the crystallization from negative electrode side toward positive electrode side was accelerated. We identified that 1000${\AA}$ thick a-Si film was completely crystallized by Cu-FALC process at 350 $^{\circ}C$ by TEM analysis.

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Alternating Magnetic Field Crystallization of Amorphous Si Films

  • Kang, K.H.;Park, S.H.;Lee, S.J.;Nam, S.E.;Kim, H.J.
    • Journal of Information Display
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    • 제4권1호
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    • pp.34-37
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    • 2003
  • We investigate the solid phase crystallization of amorphous Si films on glass substrates under alternating magnetic field induction. The kinetics of crystallization are found to be greatly enhanced by alternating magnetic field. While complete crystallization takes heat treatment of more than 14 hours at 570$^{\circ}C$, it can be reduced by applying the megnetic field to 20 minutes. It is assumed that the enhancement of crystallization is associated with an electromotive force voltage generated by alternating magnetic field. This electric field applied in the amorphous Si may possibly be the reason for acceleration of the atomic mobility of crystallization through the modification of atomic potentials

Effect of Pulsed Nd:YAG Laser Energy on Crystallization in $Li_2O - Al_2O_3 - SiO_2$ Glass

  • Lee, Yong--Su;Kang, Won--Ho
    • 한국마이크로전자및패키징학회:학술대회논문집
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    • 한국마이크로전자및패키징학회 2001년도 The IMAPS-Korea Workshop 2001 Emerging Technology on packaging
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    • pp.104-109
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    • 2001
  • A 355 nm (3.5 eV) neodymium:yttrium aluminum gamet laser, produced by a harmonic generator, was used to create silver metallic particles as seeds for nucleation in photosensitive glass containing Ag+ and Ce3+ ions. The pulse width and frequency of the laser were 8 ns and 10 Hz, respectively. Heat treatment was conducted at 570 C for 1 h, following laser irradiation, to produce crystalline growth, after which a LiAlSi3O8 crystal phase appeared in the laser-irradiated Li2O A1203 SiO2 glass. For the Present study, we compared the effect of laser-induced crystallization on glass crystallization with that of spontaneous crystallization by heat treatment.

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