• 제목/요약/키워드: Crystallization speed

검색결과 65건 처리시간 0.021초

Recovery and Refining Process of Gypsum from Waste Plaster Board

  • Song, Young-Jun;Hiroki Yotsumoto
    • 자원리싸이클링
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    • 제10권6호
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    • pp.43-52
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    • 2001
  • This study was conducted to obtain granular crystalline gypsum that can be used as raw material for Plaster boards or cements from waste Plaster board. Gypsum could be Preferentially disintegrated to gypsum needle in $10\mu\textrm{m}$ or less size by hydration after the dehydration of crushed waste Plaster board. The finer the gypsum needle, it is easier to remove coarse impurities and to recover the gypsum needle. The optimum conditions for obtain the finer gypsum size were dehydration rate of 75~85%, solid concentration at hydration of 10~15%, agitation speed of 250~400 rpm, crushing size before dehydration of 2 cm or less. Gypsum of 98.21% grade was recovered with 99.0% yield as the undersize of 325 mesh wet screening followed by the dehydration-hydration process performed at the conditions of dehydration rate of 80%, solid concentration at hydration of 15%, agitation speed of 300 rpm, crushing size before dehydration of 2 cm or less. After the recrystallization of recovered gypsum, Plate-like gypsum of $151\mu\textrm{m}$ size with 99.49% grade was obtained as the oversize of 270 mesh in a wet screening.

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기계적 및 열적 처리된 PET 필름의 특성에 관한 연구 (The Study for the characteristics of mechanically and thermally treated PET films)

  • 이종영;노지영;박성수
    • 한국결정성장학회지
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    • 제11권5호
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    • pp.197-202
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    • 2001
  • 여러 조건에서 제조된 poly(ethylene terephthalate) 필름 시편들로부터 열처리 및 냉연신 조건이 시편의 물성에 미치는 영향을 조사하였다. 상온에서 만능시험기을 사용하여 미열처리 및 열처리된 시편들을 0.5에서 500 mm/min의 cross-head 속도로 단계적 연신을 행한 결과, 약 50, 72 및 $129^{\circ}C$에서 열처리된 시편들의 응력-변형 곡선에서는 응력 진동이 발생되지만, 약 $83^{\circ}C$에서 30분 동안 열처리된 시편의 응력-변형 곡선에서는 응력 진동이 발생되지 않음을 알 수 있었다. 시차 주사 열량기를 사용하여 $10^{\circ}C$/min의 승온 속도에서 열분석을 행하였고, 시편들의 유리전이온도, 결정화 피크, 용융 잠열, 결정화도를 측정하였다. 1 Hz의 주파수대에서 $1.5^{\circ}C$/min의 승온 속도로 multiple-function internal friction pendulum으로 시편들의 동적 기계분석도 수행하였으며, 미열처리, 열처리 및 연신 시편들의 순서대로 탄성계수 값이 증가함을 알 수 있었다.

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오스테나이트계 스테인리스강 레이저 용접부의 응고균열 거동 (Part 2) - δ 페라이트 정출 및 응고편석 거동에 따른 응고균열 민감도 변화 - (Solidification Cracking Behavior in Austenitic Stainless Steel Laser Welds (Part 2) -Effects of δ-ferrite Crystallization and Solidification Segregation Behavior on Solidification Cracking Susceptibility-)

  • 천은준;이수진;서정;강남현
    • Journal of Welding and Joining
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    • 제34권5호
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    • pp.61-69
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    • 2016
  • A numerical simulation of the solid/liquid coexistence temperature range, using solidification segregation model linked with the Kurz-Giovanola-Trivedi model, explained the mechanism of the BTR shrinkage (with an increase in welding speed) in type 310 stainless steel welds by reduction of the solid/liquid coexistence temperature range of the weld metal due to the inhibited solidification segregation of solute elements and promoted dendrite tip supercooling attributed to rapid solidification of laser beam welding. The reason why the BTR enlarged in type 316 series stainless welds could be clarified by the enhanced solidification segregation of impurity elements (S and P), corresponding to the decrement in ${\delta}-ferrite$ crystallization amount at the solidification completion stage in the laser welds. Furthermore, the greater increase in BTR with type 316-B steel was determined to be due to a larger decrease in ${\delta}-ferrite$ amount during welding solidification than with type 316-A steel. This, in turn, greatly increases the segregation of impurities, which is responsible for the greater temperature range of solid/liquid coexistence when using type 316-B steel.

램프 스캐닝 열처리에 의한 다결정 실리콘 박막의 형성 및 TFT 제작에 관한 연구 (A Study on the Formation of Polycrystalline Silicon Film by Lamp-Scanning Annealing and Fabrication of Thin Film Transistors)

  • 김태경;김기범;이병일;주승기
    • 전자공학회논문지D
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    • 제36D권1호
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    • pp.57-62
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    • 1999
  • 유리기판 위에 다결정 실리콘 박막 트랜지스터(Thin Film Transistor, TFT)를 형성하기 위해서 램프 Scanning 열처리 장치를 개발하였다. 선형 램프를 Scanning 함으로써 대면적 유리기판에의 적용 가능성을 높였으며 TFT의 채널 부분은 금속 유도 측면 결정화 방법에 의해 결정화 시켰다. 할로겐 램프에 의한 빛은 투명 유리기판은 가열시키지 않고 ,island 행태의 실리콘 박막만을 가열시킬 수 있었다. 실리콘 산화막으로 이루어진 Capping layer를 적용하였고 이때의 성장 속도는 Capping layer가 없는 경우보다 35배 정도로 빠른 MILC 성장 속도를 나타내었다. 할로겐 램프를 약 1.4mm/sec의 속도록 Scanning한 경우 유리기판의 손상 없이 18-27${\mu}m/scan$ 정도의 결정화를 나타내었다. 이와 같이 제작된 다결정 실리콘 박막으로 제작된 TFT는 전자이동도 130$cm^2/V{\cdot}sec$의 우수한 특성을 나타내었다.

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PRAM을 위한 $Ag_x(Ge_2Sb_2Te_5)_{1-x}$ (x= 0, 0.05, 0.1) 박막의 특성 (Characteristics of $Ag_x(Ge_2Sb_2Te_5)_{1-x}$ (x= 0, 0.05, 0.1) thin films for PRAM)

  • 김성원;송기호;이현용
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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    • pp.21-22
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    • 2008
  • In the paper, we report several experimental data capable of evaluating the phase transformation characteristics of $Ag_x(Ge_2Sb_2Te_5)_{1-x}$ (x =0, 0.05, 0.1) thin films. The $Ag_x(Ge_2Sb_2Te_5)_{1-x}$ phase change thin films have been prepared by thermal evaporation. The crystallization characteristics of amorphous$Ag_x(Ge_2Sb_2Te_5)_{1-x}$ thin films were investigated by using nano-pulse scanner with 658 nm laser diode (power; 1~17 mW, pulse duration; 10~460 ns) and XRD measurement. It was found that the more Ag is doped, the more crystallization speed was 50 improved. In comparision with $Ge_2Sb_2Te_5$ thin film, the sheet resistance$(R_{amor})$ of the amorphous $Ag_x(Ge_2Sb_2Te_5)_{1-x}$ thin films were found to be lager than that of $Ge_2Sb_2Te_5$ film($R_{amor}$ $\sim10^7\Omega/\square$ and $R_{cryst}$ 10 $\Omega/\square$). That is, the ratio of $R_{amor}/R_{cryst}$ was evaluates to be $\sim10^6$ This is very helpful to writing current reduction of phase-change random acess memory.

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$Ge_2Sb_2Te_5$ 상변화 소자의 상부구조 변화에 따른 결정화 특성 연구 (A study on characteristics of crystallization according to changes of top structure with phase change memory cell of $Ge_2Sb_2Te_5$)

  • 이재민;신경;최혁;정홍배
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2005년도 추계학술대회 논문집 Vol.18
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    • pp.80-81
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    • 2005
  • Chalcogenide phase change memory has high performance to be next generation memory, because it is a nonvolatile memory processing high programming speed, low programming voltage, high sensing margin, low consumption and long cycle duration. We have developed a sample of PRAM with thermal protected layer. We have investigated the phase transition behaviors in function of process factor including thermal protect layer. As a result, we have observed that set voltage and duration of protect layer are more improved than no protect layer.

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PREPARATION OF POLY(ETHYLENE-CO-VINYL ALCOHOL) MEMBRANE VIA THERMALLY INDUCED PHASE SEPARATION

  • Matsuyama, Hideto;Shang, Mengxian;Teramoto, Masaaki
    • 한국막학회:학술대회논문집
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    • 한국막학회 2004년도 Proceedings of the second conference of aseanian membrane society
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    • pp.74-77
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    • 2004
  • Porous membranes were prepared via thermally induced phase separation (TIPS) of (ethylene-co-vinyl alcohol) (EVOH)/glycerol mixtures. The liquid-liquid (L-L) phase boundaries are shifted to higher temperature when the ethylene contents in EVOH increase. Moreover, the kinetic study proved that the growth of droplets formed by the general liquid-liquid (L-L) phase separation obeyed a power-law scaling relationship in the later stage of spinodal decomposition (SD). A new phase separation mechanism was presented, in which the L-L phase separation could be resulted from the crystallization. The hollow fiber membranes were prepared. The membranes showed asymmetric structures with skin layer near the outer surface, the larger pores just below the skin layer and the smaller pores near the inner surface. The effect of ethylene content (EC) in EVOH, cooling water bath temperature and take-up speed on membrane performance was investigated.

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칼코게나이드 박막에서의 conductivity 변화에 관한 연구 (The study of conductivity transition on chalcogenide thin films)

  • 양성준;신경;박정일;정홍배
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2003년도 추계학술대회 논문집 Vol.16
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    • pp.112-115
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    • 2003
  • There is a growing need for a nonvolatile memory technology with faster speed than existing nonvolatile memories. $T_c$(crystallization temperature) is confirmed by measuring the conductivity with the varying temperature. The sample is heated on the hotplate and slow down to the room-temperature. We prepared Te based alloy bulk. The materials can be used for nonvolatile random access memory.

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Strip-cast 조건이 Nd-Fe-B 합금의 미세조직 형성에 미치는 영향 (Effect of Strip-cast Conditions on the Formation of Microstructures in Nd-Fe-B alloys)

  • 이대훈;장태석;김동환;김승호
    • 한국자기학회지
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    • 제12권1호
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    • pp.34-40
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    • 2002
  • 고에너지 Nd-Fe-B 소결자석 제조용 strip-cast 합금의 미세조직 개선을 위하여, Nd-Fe-B 합금을 다양한 조건하에서 strip casting법으로 제조한 후, 제조 조건이 상 형성, 상 분포 및 조직 형성에 미치는 영향을 조사하였다. 냉각속도 즉, wheel speed가 5 m/s 이하일 때 고특성 소결자석 제조에 적합한 미세조직을 갖는 Strip 합금들을 제조할 수 있었으며, 이때의 한계 조성은 Nd$_{14}$Fe$_{79}$B$_{7}$ 정도로 추정되었다. 또한 조성에 상관없이 5 m/s 이하에서는 strip 표면에 수직한 방향으로 <001> preferred orientation이 발생하였는데, 이것은 궁극적으로 합금의 분쇄.성형시 결정립 배향도 향상에 유리하게 작용할 것으로 보인다. 한편 냉각속도가 증가할수록 Nd$_2$Fe$_{14}$B 결정립의 미세화로 인하여 보자력이 증가하였으나, Nd 함량이 감소할 경우 $\alpha$-Fe 정출의 증가로 인하여 보자력이 감소하였다.

무결정결함영역을 유지하면서 에너지를 절감하는 초크랄스키 실리콘 단결정 성장로 수냉관 최적 설계 (Optimal Water-cooling Tube Design for both Defect Free Process Operation and Energy Minimization in Czochralski Process)

  • 채강호;조나영;조민제;정현준;정재학;성수환;육영진
    • Current Photovoltaic Research
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    • 제6권2호
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    • pp.49-55
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    • 2018
  • Recently solar cell industry needs the optimal design of Czochralski process for low cost high quality silicon mono crystalline ingot. Because market needs both high efficient solar cell and similar cost with multi-crystalline Si ingot. For cost reduction in Czochralski process, first of all energy reduction should be completed because Czochralski process is high energy consumption process. For this purpose we studied optimal water-cooling tube design and simultaneously we also check the quality of ingot with Von mises stress and V(pull speed of ingot)/G(temperature gradient to the crystallization) values. At this research we used $CG-Sim^{(R)}$ S/W package and finally we got improved water-cooling tube design than normally used process in present industry. The optimal water-cooling tube length should be 200mm. The result will be adopted at real industry.