• Korean Chemical Engineering Research
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• v.52 no.3
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• pp.340-346
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• 2014

Continuous and dense ZIF-7 membranes were successfully synthesized on ${\alpha}-Al_2O_3$ porous substrate via two-step crystallization technique. ZIF-7 seeding layer was first deposited on porous ${\alpha}-Al_2O_3$ substrate by in-situ low temperature crystallization, and then ZIF-7 membrane layer can be grown through the secondary high-temperature crystallization. Two synthesis solutions with different concentration were used to prepare ZIF-7 seeding layer and membrane layer on porous ${\alpha}-Al_2O_3$ substrate, respectively. As a result, a continuous and defect-free ZIF-7 membrane layer can be prepared on porous ${\alpha}-Al_2O_3$ substrate, as confirmed by scanning electron microscope. XRD characterization shows that the resulting membrane layer is composed of pure ZIF-7 phase without any impurity. A single gas permeation test of $H_2$, $O_2$, $CH_4$ or $CO_2$ was conducted based on our prepared ZIF-7 membrane. The ZIF-7 membrane exhibited excellent H2 molecular sieving properties due to its suitable pore aperture and defect-free membrane layer.

• Proceedings of the Materials Research Society of Korea Conference
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• 2010.05a
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• pp.58.1-58.1
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• 2010

We have developed a novel crystallization process, where the crystallization temperature is lowered compared to the conventional RTA process and the metal contamination is lowered compared to the conventional VIC process. A very-thin a-Si film was deposited and crystallized at $550^{\circ}C$ for 3 h by the VIC process and then a thick a-Si film was deposited and crystallized by the RTA process at $680^{\circ}C$ for 5 min using the VIC poly-Si layer as a crystallization seed layer. The RTA crystallized temperature could be lowered up to $50^{\circ}C$, compared to RTA process alone. The poly-Si film appeared a needle-like growth front and relatively well-arranged (111) orientation. In addition, the Ni concentration in the poly-Si film was lowered to $3{\times}10^{17}\;cm^{-3}$ and that at the poly-Si/$SiO_2$ interface was lowered to $5{\times}10^{19}\;cm^{-3}$. The reduction in metal contamination could be greatly helpful to achieve a low leakage current in poly-Si TFT, which is the critical parameter for commercialization of AMOLED.

• Fibers and Polymers
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• v.1 no.2
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• pp.76-82
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• 2000

A series of random copolyesters having various compositions were synthesized by bulk copolymerization of bishydroxyethyl terephthalate (BHET) with 1,4-cyclohexane dimethanol (CHDM) or dimethyl isophthalate (DMI). CHDM and DMI content was less than 10 wt%. For the synthesized copolyesters, isothermal crystallization rate, melting behavior, and equilibrium temperature were investigated by calorimetry and by Avrami and Hoffman-Weeks equation. Crystalline lattice and morphology were studied by WAXD and SEM. Regardless of the composition, the value of the Avrami exponent was about 3, which indicates that crystallization mechanism of the copolyester was similar to those of PET homopolymer. Incoporation of CHDM or DMI units in PET backbone decreased the crystallization rate of the copolyesters. Surface free energy of copolyesters was evaluated using the newly proposed equation. The value of surface free energy was about 189$\times$$10^{-6}$/$J^{2}$/$m^{4}$ regardless of comonomer contents. This result is in good agreement with that of PET homopolymer.

• Applied Chemistry for Engineering
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• v.10 no.4
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• pp.497-501
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• 1999

The changes of properties were studied for the polypropylene(PP)/Nylon6 blends containing different kinds of compatibilizer made by either reactive extrusion of solution reaction. The compatibilizers were PP grafted with maleic anhydride (MAH) made by reactive extrusion and solution reaction. The grafted MAH contents were 0.3 wt %, and 2.7 wt %, respectively. The composition of the PP/nylon6 blend was fixed at 75/25 by weight. Blending was carried out with twin-screw extruder (L/D=30, ${\psi}=30$) at 300 rpm. As the content of PP-g-MAH was increased, the crystallization peak of Nylon6 decreased gradually then finally disappeared. Disappearance of crystallization peak of Nylon6 was mostly affected by grafted MAH content rather than the preparation method and the amount of compatibilizer. The portion of Nylon6 that could not crystallize in its normal crystallization temperature crystallized together with PP at the crystallization temperature of PP. So called concurrent crystallization was observed. Meanwhile two more peaks were observed during heating cycle. One was exothermic peak at $193^{\circ}C$ near to crystallization temperature of Nylon6, the other was endothermic peak at $215^{\circ}C$ that was $5^{\circ}C$ lower than normal endothermic peak of Nylon6. To analyze the peaks, nylon6 was annealed in the differential scanning calorimeter. As a result, the peak at $193^{\circ}C$ was crystallization peak of imperfect crystalline of Nylon6 and the other peak at $215^{\circ}C$ was melting peak of imperfect crystalline of nylon6.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.313-313
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• 2013

For high-performance TFT (Thin film transistor), poly-crystalline semiconductor thin film with low resistivity and high hall carrier mobility is necessary. But, conventional SPC (Solid phase crystallization) process has disadvantages in fabrication such as long annealing time in high temperature or using very expensive Excimer laser. On the contrary, MIC (Metal-induced crystallization) process enables semiconductor thin film crystallization at lower temperature in short annealing time. But, it has been known that the poly-crystalline semiconductor thin film fabricated by MIC methods, has low hall mobility due to the residual metals after crystallization process. In this study, Ni metal was shallow implanted using PIII&D (Plasma Immersion Ion Implantation & Deposition) technique instead of depositing Ni layer to reduce the Ni contamination after annealing. In addition, the effect of external magnetic field during annealing was studied to enhance the amorphous silicon thin film crystallization process. Various thin film analytical techniques such as XRD (X-Ray Diffraction), Raman spectroscopy, and XPS (X-ray Photoelectron Spectroscopy), Hall mobility measurement system were used to investigate the structure and composition of silicon thin film samples.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.8 no.2
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• pp.269-277
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• 1998

The crystallization method determines the material quality and consequent device performance. This paper investigates the crystallization of a-Si:H films on various substrate materials and analyzes the crystallization effect with and without using eutectic forming metals. From the examinations of the various substrate materials, a metal Mo was selected for the a-Si:H films growth and subsequent crystallization of it. For a sample without any eutectic metal layer, we observed grain size of $0.8{\mu}m$ after $1100^{\circ}C$ anneal treatment. To reduce crystallization temperature, we used some of the eutectic forming metals such as Au, Al and Ag. Poly-Si films with grain size over $10{\mu}m$ and (111) preferential plains were achieved using a premetal layer of Au at an anneal temperature of $700^{\circ}C$. The various crystallization effects of eutectic metal thickness and type were investigated for photovoltaic (PV) device applications.

• Journal of Adhesion and Interface
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• v.5 no.4
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• pp.17-23
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• 2004

In this study, we prepared the polycarbonates with various molecular weights by melt polymerization and investigated the crystallization by solvent induced crystallization. Effects of the types and compositions of solvents, crystallizing temperatures and molecular weights on crystallinity and melt temperatures of polycarbonates were evaluated by DSC, XRD and SEM. In case of low molecular weight polycarbonates and high crystallization temperature, the crystallinity of the polycarbonate was increased. As the increase of the crystallization temperature and the solution concentration, relatively uniform crystalline structures were obtained. Also, by treating with mixed solvents, the control of desired surface areas and crystallinity could be possible.

• Korea-Australia Rheology Journal
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• v.17 no.1
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• pp.21-25
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• 2005

Rheological properties and crystallization kinetics of the polypropylene (PP) block copolymer and recycled PP block copolymer were studied by advanced rheometric expansion system (ARES), differential scanning calorimetry (DSC), and optical microscopy. In the study of the dynamic rheology, it is observed that the storage modulus and loss modulus for the PP block copolymer and recycled PP block copolymer did not change with frequency. In the study of the effect of the repeated extrusion on the crystallization rate, half crystallization time of the PP samples was increased with the number of repeated extrusion in isothermal crystallization temperature ($T_c$). From the isothermal crystallization kinetics study, the crystallization rate was decreased with the increase of the number of repeated extrusion. Also, from the result of Avrami plot, the overall crystallization rate constant (K) was decreased with the increase of the number of the repeated extrusion. From the study of the optical microscopy, the size of the spherulite of the PP samples did not change significantly with the number of repeated extrusion. However, it was clearly observed that the number of the spherulite growth sites was decreased with the number of repeated extrusion. From the results of the crystallization rate, isothermal crystallization kinetics, Avrami plots, and optical microscopy, it is suggested that the crystallization rate of the PP block copolymer is decreased with the increase of the number of repeated extrusion.

• The Korean Journal of Ceramics
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• v.2 no.1
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• pp.48-53
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• 1996

Ion beam assisted crystallization behavior of sol-gel derived $PbTiO_3$ thin films, deposited on bare silicon(100) substrates by spin-casting method, has been investigated. Ar ion bombardment was directly conducted on the spincoated film surface with or without heating the film from room temperature to $300^{\circ}C$. Ion dose was changed from $5{\times}10^{15}$ to $7.5{\times}10^{16}$ $Ar^-/cm^2$. Formation of (110) oriented perovskite phase was obseerved with ion dose above $5{\times}10^{16}\; Ar^+/cm^2$. Crystallization of $PbTiO_3$ thin film could be enhanced with increasing the Air ion dose, or heating the substrate during ion bombardment. Crystallization of the $PbTiO_3$ films by ion bombardment was related to the local heating effect during ion bombardment.

• Journal of the Korean Ceramic Society
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• v.30 no.5
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• pp.389-396
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• 1993

We studied the crystallization behavior of amorphous PbTiO3 thin film grown at 30$0^{\circ}C$ by RF magnetron sputtering on Pt substrate. Crystallization to full perovskite phase was observed after annealing at 475$^{\circ}C$, for 9min, without PbO volatilization. The higher the annealing temperature, the shorter the time required for crystallization. The isothermal kinetic study at 475$^{\circ}C$ showed that the Avrami constant was approximately 4, which implies that the crystallization can be characterized by isotropic 3-dimensional growth with a constant nucleation rate. The TEM study revealed that the crystallized thin film was composed of very fine (20~100nm) grains oriented randomly without any evidence of 90$^{\circ}$domain boundaries.