• E2M - 전기 전자와 첨단 소재
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• 제7권2호
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• pp.117-122
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• 1994

The role of ZnS buffer layer not only suppresses chemical reactions between emission material and insulating material but also alters the luminescence and the crystallinity of the emission layer, if ZnS buffer layer was sandwiched between emission layer and insulating layer of electroluminescent device. In this research, we fabricated ZnS thin film with rf magnetron sputter system by varying rf power 100, 200W, substrate temperature 100, 150, 200, 250.deg. C and post-annealing temperature 200, 300, 400, 500.deg. C and analysed X-ray diffraction pattern, transmission spectra and cross section by SEM photograph for seeking the optimal crystallization condition of ZnS buffer layer. As a result, increasing the rf power, the crystallinity of ZnS thin film was improved. It was found that the ZnS thin film had better properties than anything else when fabricated with the following conditions ; rf power 200W, substrate temperature 150.deg. C, and post-annealing temperature 400.deg. C. ZnS thin film had the transmittance more than 80% in visible range. So it is suitable to use as a buffer layer of electroluminescent devices.

• 한국전기전자재료학회논문지
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• 제33권5호
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• pp.400-404
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• 2020

In this paper, we study the correlation between the crystallinity of semiconductive compounds for eco-friendly power cables and the dispersive properties of carbon black. The crystal structure of the polymer material is advantageous for mechanical properties and heat-resistance. However, the polymer acts as an inhibitor to the dispersibility of carbon black. The purpose of this study is to develop a TPE semiconductive compound technology. The high heat resistance and ultra-smoothness characteristics which are required for high voltage and ultra-high voltage cables should be satisfied by designing and optimizing the structure of a non-crosslinking-type eco-friendly TPE semiconductive compound. The application of excess TPE resin was found to not only inhibit the processability in the compounding process, but also reduced the dispersion properties of carbon black due to higher crystallinity. After the crystallinity of the compound was identified through DSC analysis, it was compared with the related dispersion characteristics. Through this analysis and comparison, we designed the optimal structure of the eco-friendly TPE semiconductive compound.

• 한국전기전자재료학회논문지
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• 제22권8호
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• pp.671-676
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• 2009

The $Sr_{0.7}Bi_{2.3}Nb_2O_9$(SBN) thin films are deposited on Pt-coated electrode(Pt/Ti/$SiO_2$/Si) using RF sputtering method at various deposition conditions. We investigated the effect of deposition condition on the surface morphology and dielectric properties of SBN thin films. The optimum of the rougness showed about 4.33 nm in 70/30 of Ar/$O_2$ ratio. The crystallinity and rougness of SBN thin films were increased with the increase of rf power. Also, Deposition rate of SBN thin films was about 4.17 nm/min in 70 W of rf power. The capacitance of SBN thin films were increased with the increase of Ar/$O_2$ ratio, rf power and deposition temperature respectively.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.1
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• pp.457-460
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• 2004

Many of the physical and chemical properties of polymer materials can be altered by high energy radiation. In the present work the exposure to radiation of low density polyethylene(LDPE) included antioxidants was carried out at various doses up to 600kGy at a dose rate of 5kGy/hr in the presence of air at room temperature. The study of the irradiation effects on the material properties has been make by different methods in an integrated way. The experimental data indicate that the decomposition onset temperature(DOT), the crystallinity and the thermoluminescence(TL) with radiation dose. DOT, crystallinity and TL analysis from irradiated PE samples provides useful data for the characterization of radiation-induced oxidation effects on these samples.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.407-408
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• 2013

Thin transparent conductive oxides (TCOs) having a thickness lower than 30 nm have been widely usedin touch screen panels. However the resistivity of the TCO films significantly increases as the thickness decreases, due to the poor crystallinity at very thin thickness of TCO films. In this study, we have investigated the effect of electron beam irradiation during the sputtering on the electrical properties and transmittance of 30 nm-thick ITO films, which have a different SnO2 atomic percent, prepared by magnetron sputtering at room temperature. Fig. 1 shows the variation of resistivity of ITO films with a different SnO2 atomic percent for both the normal ITO films and electron beam irradiated ITO films. As shows in Fig. 1, the electron beam irradiation to the ITO (SnO2 weight percent 10%) films during the sputtering resulted in a significantly decreased in resistivity from $7.4{\times}10^{-4}{\Omega}-cm$ to $1.5{\times}10^{-4}{\Omega}-cm$ and it also increased in transmittance from 84% to 88% at a wavelength of 550 nm. These results can be attributed to energy transfer from electron to ad-atoms of ITO films during the electron beam irradiated sputtering, which can enhance the crystallinity of 30 nm-thick ITO films. It is strongly indicate that electron beam irradiation can greatly improve the electrical properties and transmittance of very thin ITO films for touch screen panels, flexible displays and solar cells.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1999년도 하계학술대회 논문집 D
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• pp.1696-1698
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• 1999

The methastable state diamond films have been deposited on Si substrates using MWPCVD. Effects of each experimental parameters of MWPCVD including $CH_4$ conentrations, Oxygen additions, Operating pressure, etc. on the growth rate and crystallinity were invesitigated. The best crystallinity of the film at 3% methane concentration addition of oxygen to the $CH_4-H_2O$ mixture gave an improved film crystallinity at 50% oxygen concentration. Upon increasing the operating pressure, the growth rate and crystallinity were increased simultaneously.

• 한국전기전자재료학회논문지
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• 제31권5호
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• pp.320-323
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• 2018

SiGe thin films were deposited by remote plasma enhanced chemical vapor deposition (RPE-CVD) at $400^{\circ}C$ using $SiH_4$ or $SiCl_4$ and $GeCl_4$ as the source of Si and Ge, respectively. The growth rate and the degree of crystallinity of the fabricated films were characterized by scanning electron microscopy and Raman analysis, respectively. The optical and electrical properties of SiGe films fabricated using $SiCl_4$ and $SiH_4$ source were comparatively studied. SiGe films deposited using $SiCl_4$ source showed a lower growth rate and higher crystallinity than those deposited using $SiH_4$ source. Ultraviolet and visible spectroscopy measurement showed that the optical band gap of SiGe is in the range of 0.88~1.22 eV.

• 한국전기전자재료학회논문지
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• 제12권1호
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• pp.11-17
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• 1999

Aging characteristics of the crosslinked polyethylene have been measured after applying electrical, thermal and combined stresses. ICP and FT-IR measurements confirmed diffusion of low molecular weight components such as antioxidant and presence of carbonyl group. Carbonyl group of aged crosslinked polyethylene under combined stress was detected by FT-IR. As deterioration of the crosslinked polyethylene progresses, crystallinity degree and density decrease. Also, dielectric properties have been measured by tan $\delta$ and $\varepsilon$$_{r}$ measurements. The three-parameter Weibull distribution was found to be the best suited among other probabilistic distribution representing the dielectric breakdown strength of aged crosslinked polyethylene. The scale parameter and location parameter decreases as the applied stress increases. The shape parameter increases as the stress increases.s.

• Journal of Electrical Engineering and Technology
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• 제2권4호
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• pp.525-531
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• 2007

Ni(75 wt.%)-Cr(20 wt.%)-Al(3 wt.%)-Mn(4 wt.%)-Si(1 wt.%) alloy thin films were prepared using the DC magnetron sputtering process by varying the sputtering conditions such as power, pressure, substrate temperature, and post-deposition annealing temperature in order to fabricate a precision thin film resistor. For all the thin film resistors, sheet resistance, temperature coefficient of resistance (TCR), and crystallinity were analyzed and the effects of sputtering conditions on their properties were also investigated. The oxygen content and TCR of Ni-Cr-Al-Mn-Si resistors were decreased by increasing the sputtering pressure. Their sheet resistance, TCR, and crystallinity were enhanced by elevating the substrate temperature. In addition, the annealing of the resistor thin films in air at a temperature higher than $300^{\circ}C$ lead to a remarkable rise in their sheet resistance and TCR. This may be attributed to the improved formation of NiO layer on the surface of the resistor thin film at an elevated temperature.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집
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• pp.36-39
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• 2002

Polycrystalline silicon (poly-Si) thin film transistor (TFT) technology is emerging as a key technology for active matrix liquid crystal displays (AMLCD), allowing the integration of both active matrix and driving circuit on the same substrate (normally glass). As high temperature process is not used for glass substrate because of the low softening points below 450$^{\circ}C$. However, high temperature process is required for getting high crystallization volume fraction (i.e. crystallinity). A poly-Si thin film transistor has been fabricated to investigate the effect of high temperature process on the molybdenum (Mo) substrate. Improve of the crystallinity over 75% has been noticed. The properties of structural and electrical at high temperature poly-Si thin film transistor on Mo substrate have been also analyzed using a sputtering method