• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.190-190
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• 2010

Zinc oxide is the most attractive material due to the large direct band gap (3.37 eV), excellent chemical and thermal stability, and large exciton binding energy (60 meV). Recently, ZnO nanorods were used as the high efficient antireflection coating layer of solar cells based on silicon (Si). In this reports, we studied the effects of rapid thermal annealing (RTA) treatment on optical properties of ZnO nanorods. For fabrication of ZnO nanorods, there are many methods such as hydrothermal method, sol-gel method, and metal organic chemical vapor deposition method. Among of them, we used the conventional wet chemical method which is simple and low temperature growth. In order to synthesize the ZnO nanorods, the ZnO films were deposited on Si substrate by RF magnetron sputtering at room temperature and the samples were dipped to aqua solution containing the zinc nitrate and hexamethylentetramines (HMT). The synthesis process was achieved in keeping with temperature of $90-95^{\circ}C$ and under constant stirring. The morphology of ZnO nanorods on glass and Si was characterized by scanning electron microscopy. For the analysis of antireflection performance, the reflectance and transmittance were measured by spectrophotometer. And for analyzing the effects of RTA treatment on ZnO nanorods, crystalline properties were investigated by X-ray diffraction measurements and optical properties was estimated by photoluminescence spectra.

• Corrosion Science and Technology
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• 제9권2호
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• pp.81-86
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• 2010

The mechanisms of selective oxidation of intercritically annealed CMnAl TRIP steels in a Continuous Galvanizing Line (GCL) were studied by cross-sectional observation of the surface and sub-surface regions by means of High Resolution Transmission Electron Microscopy (HR-TEM). The selective oxidation and nitriding of an intercritically annealed CMnAl TRIP steel in a controlled dew point 10%$H_2+N_2$ atmosphere resulted in the formation of c-xMnO.$MnO_2$ (1${\leq}$x<3) and c-xMnO.$Al_2O_3$ ($x{\geq}1$) particles on the steel surface. Single crystal c-xMnO.$SiO_2$ ($2{\leq}x{\leq}4$) oxide particles were also observed on the surface. A thin film of crystalline c-xMnO.$SiO_2$ (2${\leq}$x<3) and c-xMnO.$Al_2O_3$ ($x{\geq}1$) was present between these particles. In the sub-surface region, internal oxidation, nitriding and intermetallic compound formation were observed. In the first region, large crystalline c-xMnO.$SiO_2$ ($1{\geq}x{\geq}2$) and c-xMnO.$Al_2O_3$ ($x{\geq}1$) oxides particles were present. In the second region, c-AlN particles were observed, and in a third region, small $MnAl_x$ (x>1) intermetallic compound particles were observed.

• 한국진공학회지
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• 제9권3호
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• pp.216-220
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• 2000

실리콘이온 주입 후 $1100^{\circ}C$에서 열처리된 실리콘 산화막에서 Si+ dose 량의 변화에 대한 광루미니센스의 변화를 관찰하였다. 모든 시료에서 가시광과 적외선영역의 광루미니센스를 관찰할 수 있었다. 광루미니센스의 peak는 7000 $\AA$, 7400 $\AA$, 그리고 8400 $\AA$ 근처에 있었으며, $Si^+$ dose량이 변함에 따라 peak의 위치와 강도가 변하였다. 이온 주입되는 $Si^+$ dose량이 $1\times10^{17}\textrm{cm}^2$일 때 광루미니센스에서 특이하게 3개의 peak를 가지고 있었으며 다른 $Si^+$ dose량의 시료에 비하여 큰 강도를 보여준다. 주입된 $Si^+$ 이온들이 실리콘 산화막내에 서 결함을 생성하여서 광루미니센스에 기여를 한다. $Si^+$ dose량과 열처리 시간 등을 변화시키면 높은 에너지의 Si 위주 radiative defect, 낮은 에너지의 Si 위주 radiative defect, 그리고 nonradiative defect들이 관계하는 것으로 생각되어져 왔으나 적절한 $Si^+$ dose량으로 더 많은 radiative defect를 생성시킬 수 있음을 확인하였다. $Si^+$ dose량을 조절함으로서 광루미니센스의 peak의 위치와 강도를 제어할 수 있을 것이다.

• 한국표면공학회지
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• 제29권6호
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• pp.809-815
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• 1996

$Y_2O_3$-based metal-insulator-semiconductor (MIS) structure on p-Si(100) has been studied. Films were prepared by UHV reactive ionized cluster beam deposition (r-ICBD) system. The base pressure of the system was about $1 \times 10^{-9}$ -9/ Torr and the process pressure $2 \times 10^{-5}$ Torr in oxygen ambience. Glancing X-ray diffraction(GXRD) and in-situ reflection high energy electron diffracton(RHEED) analyses were performed to investigate the crystallinity of the films. The results show phase change from amorphous state to crystalline one with increasingqr acceleration voltage and substrate temperature. It is also found that the phase transformation from $Y_2O_3$(111)//Si(100) to $Y_2O_3$(110)//Si(100) in growing directions takes place between $500^{\circ}C$ and $700^{\circ}C$. Especially as acceleration voltage is increased, preferentially oriented crystallinity was increased. Finally under the condition of above substrate temperature $700^{\circ}C$ and acceleration voltage 5kV, the $Y_2O_3$films are found to be grown epitaxially in direction of $Y_2O_3$(1l0)//Si(100) by observation of transmission electron microscope(TEM). Capacitance-voltage and current-voltage measurements were conducted to characterize Al/$Y_2O_3$/Si MIS structure with varying acceleration voltage and substrate temperature. Deposited $Y_2O_3$ films of thickness of nearly 300$\AA$ show that the breakdown field increases to 7~8MV /cm at the same conditon of epitaxial growing. These results also coincide with XPS spectra which indicate better stoichiometric characteristic in the condition of better crystalline one. After oxidation the breakdown field increases to 13MV /cm because the MIS structure contains interface silicon oxide of about 30$\AA$. In this case the dielectric constant of only $Y_2O_3$ layer is found to be $\in$15.6. These results have demonstrated the potential of using yttrium oxide for future VLSI/ULSI gate insulator applications.

• 한국세라믹학회지
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• 제50권2호
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• pp.108-115
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• 2013

Oxide coatings were prepared on Al-1050 substrates by an environment-friendly plasma electrolytic oxidation (PEO) process using an electrolytic solution of $Na_2SiO_3$ (8 g/L) and NaOH (3 g/L). The effects of three different duty cycles (20%, 40%, and 60%) and frequencies (50 Hz, 200 Hz, and 800 Hz) on the structure and micro-hardness of the oxide coatings were investigated. XRD analysis revealed that the oxides were mainly composed of ${\alpha}-Al_2O_3$, ${\gamma}-Al_2O_3$, and mullite. The proportion of each crystalline phase depended on various electrical parameters, such as duty cycle and frequency. SEM images indicated that the oxide coatings formed at a 60% duty cycle exhibited relatively coarser surfaces with larger pore sizes and sintering particles. However, the oxides prepared at a 20% duty cycle showed relatively smooth surfaces. The PEO treatment also resulted in a strong adhesion between the oxide coating and the substrate. The oxide coatings were found to improve the micro-hardness with the increase of duty cycle. The structural and physical properties of the oxide coatings were affected by the duty cycles.

• Applied Science and Convergence Technology
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• 제26권2호
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• pp.26-29
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• 2017

Thin films of europium-doped yttrium oxide ($Y_2O_3$:Eu) were prepared on Si (100) substrates by using a radio frequency (RF) magnetron sputtering. After the deposition, the films were annealed at $1000^{\circ}C$ in an air ambient for 1 hour. X-ray diffraction analysis revealed that the $Y_2O_3$:Eu films had a polycrystalline cubic ${\alpha}-Y_2O_3$ structure. The as-deposited films showed no photoluminescence (PL), which was due to poor crystalline quality of the films. The crystallinity of the $Y_2O_3$:Eu films was significantly improved by annealing. The strong red PL emission was observed from the annealed $Y_2O_3$:Eu films and the highest intensity peak was centered at around 613 nm. This emission peak originated from the $^5D_0{\rightarrow}^7F_2$ transition of the trivalent Eu ions occupying the $C_2$ sites in the cubic ${\alpha}-Y_2O_3$ lattice. The broad PL excitation band was observed at wavelengths below 280 nm, which was attributed to the charge transfer transition of the trivalent Eu ion.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2000년도 제18회 학술발표회 논문개요집
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• pp.100-100
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• 2000

Aluminium oxide (Al2O3) films have been investigated for many applications such as insulating materials, hard coatings, and diffusion barriers due to their attractive electrical and mechanical properties. In recent years, application of Al2O3 films for dielectric materials in integrated circuits as gates and capacitors has attracted much attention. Various deposition techniques such as sol-gel, metalorganic decomposition (MOD), sputtering, evaporation, metalorganic chemical vapor deposition (MOCVD), and pulsed laser ablation have been used to fabricate Al2O3 thin films. Among these techniques, reactive sputtering has been widely used due to its high deposition rate and easy control of film composition. It has been also reported that the sputtered Al2O3 films exhibit superior chemical stability and mechanical strength compared to the films fabricated by other processes. In this study, Al2O3 thin films were deposited on Pt/Ti/SiO/Si2 and Si substrates by DC reactive sputtering at room temperature with variation of the Ar/O2 ratio in sputtering ambient. Crystalline phase of the reactively sputtered films was characterized using X-ray diffractometry and the surface morphology of the films was observed with Scanning election microscopy. Effects of Th Ar/O2 ratio characteristics of Al2O3 films were investigated with emphasis on the thickness dependence of the dielectric properties. Correlation between the dielectric properties and the microstructure was also studied

• 공업화학
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• 제20권6호
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• pp.617-621
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• 2009

Zinc oxide (ZnO)을 금(Au)과 fluorine-doped tin oxide (FTO) 촉매로 산화실리콘($SiO_2$) 기판에 산화아연입자 20 nm, $20{\mu}m$를 각각 사용하여 기체-액체-고체(VLS) 합성법으로 성장시켰다. 나노로드의 표면특성, 화학조성, 그리고 결정특성을 엑스레이회절(X-ray diffraction (XRD)), 에너지 분산형 X선 분광기(Energy-dispersive X-ray spectroscopy (EDX)), 표면 방출주사현미경(Field-emission scanning electron microscope (FE-SEM))으로 분석하였다. ZnO의 입자 크기 뿐만 아니라 결정형태가 성장에 크게 영향을 미쳤다. ZnO의 모든 나노구조가 6방정계(六方晶系), 단일결정구조를 가지고 있었다. 최적온도는 $1030^{\circ}C$, 입자크기는 20 nm이다. 그러므로 Au 대신 플루오린 첨가 도핑으로 전기음성도가 증가된 FTO 증착에 의해서 생성된 나노로드는 경제성 있는 대체물질로서의 가치가 있을 것으로 사료된다.

• Journal of Ceramic Processing Research
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• 제20권4호
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• pp.431-435
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• 2019

The thermal annealing effects on the optical transparency and luminescent characteristics of the Eu-doped Y2O3 thin films have been investigated. The as-deposited Y2O3:Eu films exhibited an optical band gap of 5.78 eV with a transparency of 89 % at a wavelength of 550 nm. As the annealing temperature increased from 1000 to 1300 ℃, the optical band gap and transparency of the films decreased from 5.77 to 4.91 eV and from 86.8 to 64.5 % at 550 nm, respectively. The crystalline quality of the films was improved with increasing annealing temperature. The annealed Y2O3:Eu films emitted a red-color photoluminescence (PL) with the highest emission peak near 612 nm. The PL intensity was increased with increasing annealing temperature to 1200 ℃, resulting from the improvement in the crystalline quality of the films. The PL intensity was decreased with further increasing temperature above 1200 ℃ due to the formation of Y2SiO5 phase by the reaction of the film with the quartz substrate.

• 한국전기전자재료학회논문지
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• 제30권3호
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• pp.192-197
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• 2017

Hydrogenated Amorphous Silicon (a-Si:H) is used as an emitter layer in HIT (heterojunction with Intrinsic Thin layer) solar cells. Its low band gap and low optical properties (low transmittance and high absorption) cause parasitic absorption on the front side of a solar cell that significantly reduces the solar cell blue response. To overcome this, research on CSC (carrier Selective Contacts) is being actively carried out to reduce carrier recombination and improve carrier transportation as a means to approach the theoretical efficiency of silicon solar cells. Among CSC materials, molybdenum oxide ($MoO_x$) is most commonly used for the hole transport layer (HTL) of a solar cell due to its high work function and wide band gap. This paper analyzes the electrical and optical properties of $MoO_x$ thin films for use in the HTL of HIT solar cells. The optical properties of $MoO_x$ show better performance than a-Si:H and ${\mu}c-SiO_x:H$.