• 제목/요약/키워드: Crystalline Solar cell

검색결과 388건 처리시간 0.021초

결정질 실리콘 태양전지 도핑 확산 공정에서 시간과 온도 변화에 의한 Drive-in 공정 연구 (Optimization of Drive-in Process with Various Times and Temperatures in Crystalline Silicon Solar Cell Fabrication)

  • 이희준;최성진;명재민;송희은;유권종
    • 한국태양에너지학회:학술대회논문집
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    • 한국태양에너지학회 2011년도 추계학술발표대회 논문집
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    • pp.51-55
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    • 2011
  • In this paper, the optimized doping condition of crystalline silicon solar cells with 156 ${\times}$ 156 mm2 area was studied. To optimize the drive-in condition in the doping process, the other conditions except drive-in temperature and time were fixed. After etching 7 ${\mu}m$ of the surface to form the pyramidal structure, the silicon nitride deposited by the PECVD had 75~80 nm thickness and 2 to 2.1 for a refractive index. The silver and aluminium electrodes for front and back sheet, respectively, were formed by screen-printing method, followed by firing in $400-425-450-550-850^{\circ}C$ five-zone temperature conditions to make the ohmic contact. Drive-in temperature was changed in range of $828^{\circ}C$ to $860^{\circ}C$ and time was from 3 min to 40 min. The sheet resistance of wafer was fixed to avoid its effect on solar cell. The solar cell fabricated with various conditions showed the similar conversion efficiency of 17.4%. This experimental result showed the drive-in temperatures and times little influence on solar cell characteristics.

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Heat Shocking에 의한 결정질 실리콘 Solar Cell의 출력특성 (The Characteristic of Crystalline Si Solar Cell by Heat Shocking)

  • 신준오;정태희;김태범;강기환;안형근;한득영
    • 한국태양에너지학회:학술대회논문집
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    • 한국태양에너지학회 2009년도 추계학술발표대회 논문집
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    • pp.246-250
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    • 2009
  • String & tabbing step in the crystalline PV module manufacturing process for the temperature directly affects solar cells. In fact, in the manufacture of PV modules tend to be temperature factor and the corresponding changes n the output shows the same characteristics. In this journal, it will be considered about thermal characteristics, especially changes of characteristic in high temperature of the solar cell through experiment that we measure electric output characteristics of solar cells after those are applied with high temperature changes for two seconds. And we can think about the possibility of efficiency improvements over looks in PV module manufacturing processes.

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Soldering 방식에 따른 결정질 셀의 물리적 특성변화 (The Physical characteristic of Crystalline Solar Cell by Soldering Type)

  • 신준오;정태희;김태범;강기환;안형근;한득영
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2010년도 하계학술대회 논문집
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    • pp.72-72
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    • 2010
  • The PV module company use variable process step and type. Especially soldering process is important, because crystalline cell can be bow by beating temperature. Most PV module company use hot air soldering type in the tabbing & string process. Although hot air type is used widely but this type is bound to influence on cell damage. So recently new way is introducing like a high current way. In this paper, we compare with characteristics of each soldering type and then conform a method to minimize solar cell deformation. Actually solar cell deformation show many difference by fix position and cooling time after soldering step.

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태양전지(太陽電池)의 최근(最近) 연구(硏究) 개발(開發) 동향(動向) (Current Status of Solar Cell Research and Development)

  • 최병호;윤경훈;송진수
    • 태양에너지
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    • 제8권2호
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    • pp.73-76
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    • 1988
  • Thick films based on the mature crystalline silicon technology are expected to exhibit eversmaller cost reduction. The thin-film-based technology is, however, expected to exhibit a much sharper drop in cost as it develops. In this report, technology and recent R & D of thin film solar cell, such as amorphous silicon, cadnium telluride, copper indium diselenide and gallium arsenide, are described. Perspectives of world photovoltaic market and solar cell price are also described.

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N-Type c-Si 이종접합 태양전지 제작을 위한 a-Si:H(p) 가변 최적화 (A Study of Optimization a-Si:H(p) for n-type c-Si Heterojunction Solar Cell)

  • 허종규;윤기찬;최형욱;이영석;;김영국;이준신
    • 한국신재생에너지학회:학술대회논문집
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    • 한국신재생에너지학회 2009년도 춘계학술대회 논문집
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    • pp.77-79
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    • 2009
  • Amorphous/crystalline silicon heterojunction solar cells, TCO/a-Si:H (p)/c-Si(n)/a-Si:H(n)/Al, are investigated. The influence of various parameters for the front structures was studied. We used thin (10 nm) a-Si:H(p) layers of amorphous hydrogenated silicon are deposited on top of a thick ($500{\mu}m$) crystalline c-Si wafer. This work deals with the influence of the a-Si:H(p) doping concentration on the solar cell performance is studied.

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Silicon Solar Cells

  • Yi, Jun-Sin
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2007년도 제32회 학술대회 초록집
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    • pp.44-44
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    • 2007
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One-step diffusion으로 형성된 선택적 에미터 결정질 실리콘 태양전지에 관한 연구 (Crystalline Silicon Solar Cell with Selective Emitter Using One-step Diffusion Process)

  • 정경택;양오봉;유권종;이정철;송희은
    • 한국태양에너지학회:학술대회논문집
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    • 한국태양에너지학회 2011년도 추계학술발표대회 논문집
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    • pp.40-44
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    • 2011
  • Recent studies in crystalline silicon solar cell fabrication have been focused on high efficiency and low cost. However, the rising of the cost results in additional processes to approach high efficiency. The fabrication process also becomes complicated with additional technologies. In this paper, we studied the selective emitter formation with phosphorous paste to improve the conversion efficiency. Selective emitter formations like two-step diffusion or etch-back method require at least one more step compared in the conventional line since heavily and lightly doped area was needed to form separately.However,one-step diffusion process is the method diffusing heavily and lightly doped area at the same time only with additional screen-printing step. This study lays the foundation for the simple way to form the selective emitter.

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결정질 실리콘 태양전지를 위한 고주파 PECVD SiNx막 연구 (A Study on Silicon Nitride Films by high frequency PECVD for Crystalline Silicon Solar Cells)

  • 김정환;노시철;최정호;정종대;서화일
    • 반도체디스플레이기술학회지
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    • 제11권2호
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    • pp.7-11
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    • 2012
  • SiNx films have been wildly used as anti-reflection coatings and passivation for crystalline silicon solar cells. In this study, the SiNx films were deposited by using high frequency (13.56MHz) PECVD and optical & passivation properties were investigated. The RF power was changed in a certain range for the film deposition. Then, the refractive index, etch rate, minority carrier lifetime and cell efficiency were measured to study the properties of the film respectively. The optimal deposition conditions for application to crystalline silicon solar cells were proposed as results of the study. Finally, the best cell efficiency of 16.98% was obtained from the solar cell with the SiNx films deposited by RF power of 550W.

가로세로 폭의 제어가 가능한 슁글드 디자인 태양광 모듈 제조 (Fabrication of Shingled Design Solar Module with Controllable Horizontal and Vertical Width)

  • 박민준;김민섭;이은비;김유진;정채환
    • Current Photovoltaic Research
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    • 제11권3호
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    • pp.75-78
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    • 2023
  • Recently, the installation of photovoltaic modules in urban areas has been increasing. In particular, the demand for solar modules installed in a limited space is increasing. However, since the crystalline silicon solar module's size is proportional to the solar cell's size, it is difficult to manufacture a module that can be installed in a limited area. In this study, we fabricated a solar module with a shingled design that can control horizontal and vertical width using a bi-directional laser scribing method. We fabricated a string cell with a width of 1/5 compared to the existing shingled design string cells using a bi-directional laser scribing method, and we fabricated a solar module by connecting three strings in parallel. Finally, we achieved a conversion power of 5.521 W at a 103 mm × 320 mm area.

Simulated Optimum Substrate Thicknesses for the BC-BJ Si and GaAs Solar Cells

  • Choe, Kwang-Su
    • 한국재료학회지
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    • 제22권9호
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    • pp.450-453
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    • 2012
  • In crystalline solar cells, the substrate itself constitutes a large portion of the fabrication cost as it is derived from semiconductor ingots grown in costly high temperature processes. Thinner wafer substrates allow some cost saving as more wafers can be sliced from a given ingot, although technological limitations in slicing or sawing of wafers off an ingot, as well as the physical strength of the sliced wafers, put a lower limit on the substrate thickness. Complementary to these economical and techno-physical points of view, a device operation point of view of the substrate thickness would be useful. With this in mind, BC-BJ Si and GaAs solar cells are compared one to one by means of the Medici device simulation, with a particular emphasis on the substrate thickness. Under ideal conditions of 0.6 ${\mu}m$ photons entering the 10 ${\mu}m$-wide BC-BJ solar cells at the normal incident angle (${\theta}=90^{\circ}$), GaAs is about 2.3 times more efficient than Si in terms of peak cell power output: 42.3 $mW{\cdot}cm^{-2}$ vs. 18.2 $mW{\cdot}cm^{-2}$. This strong performance of GaAs, though only under ideal conditions, gives a strong indication that this material could stand competitively against Si, despite its known high material and process costs. Within the limitation of the minority carrier recombination lifetime value of $5{\times}10^{-5}$ sec used in the device simulation, the solar cell power is known to be only weakly dependent on the substrate thickness, particularly under about 100 ${\mu}m$, for both Si and GaAs. Though the optimum substrate thickness is about 100 ${\mu}m$ or less, the reduction in the power output is less than 10% from the peak values even when the substrate thickness is increased to 190 ${\mu}m$. Thus, for crystalline Si and GaAs with a relatively long recombination lifetime, extra efforts to be spent on thinning the substrate should be weighed against the expected actual gain in the solar cell output power.