• Transactions on Electrical and Electronic Materials
• /
• v.4 no.3
• /
• pp.29-33
• /
• 2003

Tri-crystalline silicon wafers have three different orientations and three-grain boundaries. In this paper, tri-crystalline silicon (tri-Si) wafers have been used for the fabrication of buried contact solar cells. The optical and micro-structural properties of these cells after texturing in KOH solution have been investigated and compared with those of cast mult- crystalline silicon (multi-Si) wafers. We employed a cost effective fabrication process and achieved buried contact solar cell (BCSC) energy conversion efficiencies up to $15\%$ whereas the cast multi-Si wafer has efficiency around $14\%$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2003.07a
• /
• pp.176-180
• /
• 2003

Tri-crystalline silicon (Tri-Si) wafers have three different orientations and three grain boundaries. In this paper, tri-Si wafers have been used for the fabrication of buried contact solar cells. The optical and micro-structural properties of these cells after texturing in KOH solution have been investigated and compared with those of cast multi-crystalline silicon (multi-Si) wafers. We employed a cost effective fabrication process and achieved buried contact solar cell (BCSC) energy conversion efficiencies up to 15% whereas the cast multi-Si wafer has efficiency around 14%.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2012.08a
• /
• pp.254-255
• /
• 2012

Interest in nano-crystalline silicon (nc-Si) thin films has been growing because of their favorable processing conditions for certain electronic devices. In particular, there has been an increase in the use of nc-Si thin films in photovoltaics for large solar cell panels and in thin film transistors for large flat panel displays. One of the most important material properties for these device applications is the macroscopic charge-carrier mobility. Hydrogenated amorphous silicon (a-Si:H) or nc-Si is a basic material in thin film transistors (TFTs). However, a-Si:H based devices have low carrier mobility and bias instability due to their metastable properties. The large number of trap sites and incomplete hydrogen passivation of a-Si:H film produce limited carrier transport. The basic electrical properties, including the carrier mobility and stability, of nc-Si TFTs might be superior to those of a-Si:H thin film. However, typical nc-Si thin films tend to have mobilities similar to a-Si films, although changes in the processing conditions can enhance the mobility. In polycrystalline silicon (poly-Si) thin films, the performance of the devices is strongly influenced by the boundaries between neighboring crystalline grains. These grain boundaries limit the conductance of macroscopic regions comprised of multiple grains. In much of the work on poly-Si thin films, it was shown that the performance of TFTs was largely determined by the number and location of the grain boundaries within the channel. Hence, efforts were made to reduce the total number of grain boundaries by increasing the average grain size. However, even a small number of grain boundaries can significantly reduce the macroscopic charge carrier mobility. The nano-crystalline or polymorphous-Si development for TFT and solar cells have been employed to compensate for disadvantage inherent to a-Si and micro-crystalline silicon (${\mu}$-Si). Recently, a novel process for deposition of nano-crystralline silicon (nc-Si) thin films at room temperature was developed using neutral beam assisted chemical vapor deposition (NBaCVD) with a neutral particle beam (NPB) source, which controls the energy of incident neutral particles in the range of 1~300 eV in order to enhance the atomic activation and crystalline of thin films at room temperature. In previous our experiments, we verified favorable properties of nc-Si thin films for certain electronic devices. During the formation of the nc-Si thin films by the NBaCVD with various process conditions, NPB energy directly controlled by the reflector bias and effectively increased crystal fraction (~80%) by uniformly distributed nc grains with 3~10 nm size. The more resent work on nc-Si thin film transistors (TFT) was done. We identified the performance of nc-Si TFT active channeal layers. The dependence of the performance of nc-Si TFT on the primary process parameters is explored. Raman, FT-IR and transmission electron microscope (TEM) were used to study the microstructures and the crystalline volume fraction of nc-Si films. The electric properties were investigated on Cr/SiO2/nc-Si metal-oxide-semiconductor (MOS) capacitors.

• Transactions on Electrical and Electronic Materials
• /
• v.6 no.5
• /
• pp.198-201
• /
• 2005

Photocurrent of a single-crystalline Si nanowire is investigated in this paper. Single-crystalline Si nanowires with amorphous $SiO_2$ shells were first synthesized from ball-milled SiO powders by thermal chemical vapor deposition, and then the amorphous $SiO_2$ shells were etched out from the as-synthesized Si nanowires. For a single-crystalline Si nanowire, photocurrent-voltage curves taken in air at room temperature were non-linear, and rapid photoresponses were observed when the light was switched on and off. The photocurrent was not changed in intensity under the illumination. Photocurrent mechanism in the single-crystalline Si nanowire is discussed in this paper.

• Proceedings of the KIEE Conference
• /
• 2005.11a
• /
• pp.81-83
• /
• 2005

Photocurrent of a single-crystalline Si nanowire is investigated in this paper. Single-crystalline Si nanowires with amorphous $SiO_2$ shells were first synthesized from ball-milled SiO powders by thermal chemical vapor deposition, and then the amorphous $SiO_2$ shellswere etched out from the as-synthesized Si nanowires. For a single-crystalline Si nanowire, photocurrent-voltage curves taken in air at room temperature were non-linear, and rapid photoresponses were observed when the light was switched on and off. The photocurrent was not changed in intensity under the illumination. Photocurrent mechanism in the single-crystalline Si nanowire is discussed in this paper.

• 전기의세계
• /
• v.25 no.1
• /
• pp.104-107
• /
• 1976

The switching characteristics of Non-crystalline As-Te-Si-Ge thin film device using Ag, In and Al metal for electrode, has been investigated. Threshold voltage and holding current of each sandwich type device varied due the to formation of the potential barrier in between non crystalline solid and electrode interface.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2009.10a
• /
• pp.1025-1027
• /
• 2009

Novel low temperature deposition process for nano-crystalline Si thin film is developed with the hyper-thermal neutral beam (HNB) technology. By our HNB assisted CVD system, the reactive particles can induce crystalline phase in Si thin films and effectively combine with heating effect on substrate. At low deposition temperature under $80^{\circ}C$, the HNB with proper incident energy controlled by the reflector bias can effectively enhance the nano-crystalline formation in Si thin film without any additional process. The electrical properties of Si thin films can be varied from a-Si to nc-Si according to change of HNB energy and substrate temperature. Characterization of these thin films with conductivity reveal that crystalline of Si thin film can increase by assist of HNB with appropriate energy during low temperature deposition. And low temperature prcoessed nc-Si TFT performance has on-off ratio as order 5.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.23 no.11
• /
• pp.837-842
• /
• 2010

This paper describes the crystallinity, growth rate, and surface morphology of single crystalline 3C-SiC (cubic silicon carbide) thin films grown with several carbonization conditions such as temperature, $C_3H_8$ flow rate, time. In case of carbonization, an increase in the carbonization temperature caused a increase in the size and numbers of unsealed void (big black spot) which decrease the crystallinity. In addition, optimal $C_3H_8$ flow rate made carbonization layer form well and prevented the formation of voids. Also, after a period of time, the growth of carbonization layer did not increase no more. The single crystalline 3C-SiC thin films on optimal carbonized Si substrate showed an improvement on the crystallinity, the growth rate, the roughness, and the carrier concentration.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.23 no.2
• /
• pp.98-102
• /
• 2010

This paper describes that single crystalline 3C-SiC (cubic silicon carbide) thin films have been deposited on carbonized Si(100) substrates using hexamethyldisilane (HMDS, $Si_2(CH_3){_6}$) as a safe organosilane single precursor and a nonflammable mixture of Ar and $H_2$ gas as the carrier gas by APCVD at $1280^{\circ}C$. The deposition was performed under various conditions to determine the optimized growth condition. The crystallinity of the 3C-SiC thin film was analyzed by XRD (X-ray diffraction). The surface morphology was also observed by AFM (atomic force microscopy) and voids between SiC and Si interfaces were measured by SEM (scanning electron microscopy). Finally, residual strain and hall mobility was investigated by surface profiler and hall measurement, respectively. From these results, the single crystalline 3C-SiC film had a good crystal quality without defects due to viods, a low residual stress, a very low roughness.

• Journal of Sensor Science and Technology
• /
• v.14 no.2
• /
• pp.131-135
• /
• 2005

This paper describes the ohmic contact formation of single crystalline 3C-SiC thin films heteroepitaxially grown on Si(001) wafers. In this work, a TiW (Titanium-tungsten) film as a contact matieral was deposited by RF magnetron sputter and annealed with the vacuum and RTA (rapid thermal anneal) process respectively. Contact resistivities between the TiW film and the n-type 3C-SiC substrate were measured by the C-TLM (circular transmission line model) method. The contact phases and interface the TiW/3C-SiC were evaulated with XRD (X-ray diffraction), SEM (scanning electron microscope) and AES (Auger electron spectroscopy) depth-profiles, respectively. The TiW film annealed at $1000^{\circ}C$ for 45 sec with the RTA play am important role in formation of ohmic contact with the 3C-SiC substrate and the contact resistance is less than $4.62{\times}10^{-4}{\Omega}{\cdot}cm^{2}$. Moreover, the inter-diffusion at TiW/3C-SiC interface was not generated during before and after annealing, and kept stable state. Therefore, the ohmic contact formation technology of single crystalline 3C-SiC using the TiW film is very suitable for high temperature MEMS applications.