• Current Applied Physics
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• 제18권11호
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• pp.1426-1430
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• 2018

High magnetic field effects on the microstructure and magnetic properties of $BaFe_{12}O_{19}$ hexaferrites synthesized hydrothermal method have been investigated. The obtained results indicate that the lattice constant decreases gradually as the magnetic field strength increases, which may be attributed to the lattice distortion resulted from the high magnetic field. Polycrystalline $BaFe_{12}O_{19}$ samples prepared under magnetic field strength at zero and 5 T are single phase. It is found that application of external magnetic field during synthesis can induce orientated growth of the hexaferrite crystals along the easy magnetic axis. The magnetic properties can be effectively regulated by an application of high magnetic fields. It is observed that the $BaFe_{12}O_{19}$ prepared under a 5 T magnetic field exhibits a higher room-temperature saturation magnetization (66.3 emu/g) than that of the sample (43.6 emu/g) obtained without magnetic field. The results can be explained as the enhanced crystalline, improvement of $Fe^{3+}$ ions occupancy and the oriented growth induced by the external magnetic field. The growing orientation of particles gives rise to increased coercivity due to the enhancement in shape anisotropy. It is expected that an application of magnetic field during the formation of magnetic nanoparticles could be a promising technique to modify magnetic properties with excellent performance.

• 대한금속재료학회지
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• 제49권4호
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• pp.348-354
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• 2011

Long-lasting brightness $Sr_{4}Al_{14}O_{25}$ : $Eu^{2+}$, $Dy^{3+}$, $Ag^{+}$ phosphor was synthesized by modified solid state reaction and its photoluminescence was investigated. $Sr(NO_3)_{2}$ and $Al(NO_3)_3{\cdot}9H_{2}O$ as starting materials, and $B_{2}O_{3}$ as a flux were mixed with $Eu_{2}O_{3}$ as an activator, $Dy_{2}O_{3}$ as a coactivator, and $AgNO_{3}$ as a charge compensator. The crystalline of target powder showed a single-phase $Sr_{4}Al_{14}O_{25}$ by the XRD characterization and the average particle size was about 20-30 ${\mu}m$ from the FE-SEM observation. $Ag^{+}$ ion doping effects (0-0.06 mol) on $Sr_{4}Al_{14}O_{25}:Eu^{2+},\;Dy^{3+},\;Ag^{+}$ phosphor were measured by photoluminescence spectrometer and luminescence meter. The of photoluminescence intensity of the $Sr_{3.64}Al_{14}O_{25}:Eu_{0.11},\;Dy_{0.22},\;Ag_{0.03}$ phosphor was higher than other compositions and afterglow brightness was 0.186 $cd/m^{2}$.

• 한국결정성장학회지
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• 제31권6호
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• pp.233-239
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• 2021

본 연구에서는 산화갈륨의 방열 특성 향상을 위해 산화갈륨/다이아몬드 이종 박막 성장을 진행하였다. 먼저, 핫필라멘트 화학기상증착법을 이용하여 다결정 다이아몬드를 증착시킨 후, 미스트 화학기상증착법을 통해 450~600℃ 사이의 온도구간에서 산화갈륨 박막을 성장시켰다. 열처리 전후 비교를 통해 500℃에서 산화갈륨/다이아몬드 계면 분리 현상이 발생함을 확인하였다. 이는 비정질과 결정질이 혼재된 산화갈륨 박막이 성장된 후, 냉각 과정에서 열팽창계수의 차이로 인해 계면이 분리된 것으로 판단하였다. 따라서, 본 연구를 통한 산화갈륨/다이아몬드 계면의 물리적 안정성을 통해 산화갈륨의 열물성 보완및 고전력 반도체로의 활용이 기대된다.

• 센서학회지
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• 제31권6호
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• pp.455-460
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• 2022

Brush-like ZnO hierarchical nanostructures decorated with MgxZn1-xO (x = 0.1, 0.2, 0.3, 0.4, and 0.5) were fabricated and examined for application to a gas sensor. They were synthesized using vapor phase growth (VPG) on indium tin oxide (ITO) substrates. To generate electronic accumulation at ZnO surface, MgZnO nanoparticles were prepared by sol-gel method, and the ratio of Mg and Zn was adjusted to optimize the device for NO₂ gas detection. As the electrons in the accumulation layer generated by the heterojunction reacted faster and more frequently with the gas, the sensitivity and speed improved. When tested as sensing materials for gas sensors at 100 ppm NO₂ at 300℃, these MgZnO decorated ZnO nanostructures exhibited an improvement from 165 to 514 times compared to pristine ZnO. The response and recovery time of the MgZnO decorated ZnO samples were shorter than those of the pristine ZnO. Various analyzing techniques, including field-emission scanning electron microscopy (FESEM), energy-dispersive X-ray spectroscopy (EDS), and X-ray powder diffraction (XRD) were employed to confirm the growth morphology, atomic composition, and crystalline information of the samples, respectively.

• 한국결정성장학회지
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• 제33권1호
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• pp.15-21
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• 2023

산화아연 분말을 제조하기 위해 3종류의 나트륨계 알칼리 침전제인 수산화나트륨, 탄산나트륨, 수산화나트륨/탄산수소나트륨을 이용하여 반응에 따른 열역학적 고찰과 아연 침전생성물로부터 산화아연 분말 제조 공정의 차이점을 비교하였다. 나트륨계 알칼리 침전제와의 반응으로 생성된 아연 침전생성물은 각각 히드록시염화아연(Zn₅(OH)₈Cl₂·H₂O)과 탄산아연수산화물 (Zn₅(OH)₆(CO₃)₂·H₂O)임을 XRD를 통해 확인하였다. 나트륨계 알칼리 침전제에 따라 800℃에서 열처리하여 생성된 산화아연 입자 크기를 비교하였다. 혼합된 수산화나트륨 및 탄산수소나트륨의 알칼리 침전제 반응으로 보다 균일한 산화아연 입자를 제조할 수 있었다.

• 한국표면공학회지
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• 제34권5호
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• pp.503-509
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• 2001

Thin films of hydrogenated amorphous silicon (a-Si : H) and hydrogenated amorphous silicon carbide (a-SiC:H) of different compositions were deposited on Si(100) wafer and glass by RF plasma-enhanced chemical vapor deposition (RF-PECVD). In the present work, we have investigated the effects of the RF power on the properties, such as optical band gap, transmittance and crystallinity. The Raman data show that the a-Si:H material consists of an amorphous and crystalline phase for the co-presence of two peaks centered at 480 and $520 cm^{-1}$ . The UV-VIS data suggested that the optical energy band gap ($E_{g}$ ) is not changed effectively with RF power and the obtained $E_{g}$(1.80eV) of the $\mu$c-Si:H thin film has almost the same value of a-Si:H thin film (1.75eV), indicating that the crystallity of hydrogenated amorphous silicon thin film can mainly not affected to their optical properties. However, the experimental results have shown that$ E_{g}$ of the a-SiC:H thin films changed little on the annealing temperature while $E_{g}$ increased with the RF power. The Raman spectrum of the a-SiC:H thin films annealed at high temperatures showed that graphitization of carbon clusters and microcrystalline silicon occurs.

• Korean Chemical Engineering Research
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• 제61권1호
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• pp.162-167
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• 2023

망간산화물은 다양한 결정구조를 가지고 있으며, 특히 초기에 생성되는 나노층상구조의 δ-MnO₂ 가 다양한 산화환원 반응에 따라 여러가지 터널 및 층상구조로 변화한다. 최근Zn기반 이차전지에 대한 관심이 증가하고 있지만, 충방전 간 Zn이온이 양극재로 사용되는 망간산화물 결정 구조 변화 및 새로운 결정 생성 등에 미치는 영향에 대한 기초적 이해를 위해 Zn이온이 망간산화물 결정에 미치는 영향에 대한 연구가 더욱 필요하다. 본 연구에서는 수열반응 간 Zn 도핑정도가 조절된 나노층상구조의 δ-MnO₂의 변화를 통해 todorokite과 chalcophanite이 생성 및 성장되는 것을 확인하였고, 반응 시간에 따른 변화과정을 확인하였다. Zn의 양이 많을수록 chalcophanite 결정이 우세하게 생성되었고, 결정 생성이 상대적으로 느린 속도로 발생하는 것을 확인하였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.251-252
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• 2012

Recently, the growing interest in organic microelectronic devices including OLEDs has led to an increasing amount of research into their many potential applications in the area of flexible electronic devices based on plastic substrates. However, these organic devices require a gas barrier coating to prevent the permeation of water and oxygen because organic materials are highly susceptible to water and oxygen. In particular, high efficiency OLEDs require an extremely low Water Vapor Transition Rate (WVTR) of $1{\times}10^{-6}g/m^2$/day. The Key factor in high quality inorganic gas barrier formation for achieving the very low WVTR required ($1{\times}10^{-6}g/m^2$/day) is the suppression of defect sites and gas diffusion pathways between grain boundaries. In this study, we developed an $Al_2O_3$ nano-crystal structure single gas barrier layer using a Neutral Beam Assisted Sputtering (NBAS) process. The NBAS system is based on the conventional RF magnetron sputtering and neutral beam source. The neutral beam source consists of an electron cyclotron Resonance (ECR) plasma source and metal reflector. The Ar+ ions in the ECR plasma are accelerated in the plasma sheath between the plasma and reflector, which are then neutralized by Auger neutralization. The neutral beam energies were possible to estimate indirectly through previous experiments and binary collision model. The accelerating potential is the sum of the plasma potential and reflector bias. In previous experiments, while adjusting the reflector bias, changes in the plasma density and the plasma potential were not observed. The neutral beam energy is controlled by the metal reflector bias. The NBAS process can continuously change crystalline structures from an amorphous phase to nano-crystal phase of various grain sizes within a single inorganic thin film. These NBAS process effects can lead to the formation of a nano-crystal structure barrier layer which effectively limits gas diffusion through the pathways between grain boundaries. Our results verify the nano-crystal structure of the NBAS processed $Al_2O_3$ single gas barrier layer through dielectric constant measurement, break down field measurement, and TEM analysis. Finally, the WVTR of $Al_2O_3$ nano-crystal structure single gas barrier layer was measured to be under $5{\times}10^{-6}g/m^2$/day therefore we can confirm that NBAS processed $Al_2O_3$ nano-crystal structure single gas barrier layer is suitable for OLED application.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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• pp.157-157
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• 2015

Recently, the growing interest in organic microelectronic devices including OLEDs has led to an increasing amount of research into their many potential applications in the area of flexible electronic devices based on plastic substrates. However, these organic devices require a gas barrier coating to prevent the permeation of water and oxygen because organic materials are highly susceptible to water and oxygen. In particular, high efficiency OLEDs require an extremely low water vapor transition rate (WVTR) of $1{\times}10^{-6}g/m^2day$. The Key factor in high quality inorganic gas barrier formation for achieving the very low WVTR required ($1{\times}10^{-6}g/m^2day$) is the suppression of defect sites and gas diffusion pathways between grain boundaries. In this study NBAS process was introduced to deposit enhanced film density single gas barrier layer with a low WVTR. Fig. 1. shows a schematic illustration of the NBAS apparatus. The NBAS process was used for the $Al_2O_3$ nano-crystal structure films deposition, as shown in Fig. 1. The NBAS system is based on the conventional RF magnetron sputtering and it has the electron cyclotron resonance (ECR) plasma source and metal reflector. $Ar^+$ ion in the ECR plasma can be accelerated into the plasma sheath between the plasma and metal reflector, which are then neutralized mainly by Auger neutralization. The neutral beam energy is controlled by the metal reflector bias. The controllable neutral beam energy can continuously change crystalline structures from an amorphous phase to nanocrystal phase of various grain sizes. The $Al_2O_3$ films can be high film density by controllable Auger neutral beam energy. we developed $Al_2O_3$ high dense barrier layer using NBAS process. We can verified that NBAS process effect can lead to formation of high density nano-crystal structure barrier layer. As a result, Fig. 2. shows that the NBAS processed $Al_2O_3$ high dense barrier layer shows excellent WVTR property as a under $2{\times}10^{-5}g/m^2day$ in the single barrier layer of 100nm thickness. Therefore, the NBAS processed $Al_2O_3$ high dense barrier layer is very suitable in the high efficiency OLED application.

• 전기화학회지
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• 제7권3호
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• pp.131-137
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• 2004

Sol-gel method which provides better electrochemical and physiochemical properties compared to the solid-state method was used to synthesize the material of $LiFe_yMn_{2-y}O_4$. Fe was substituted to increase the structural stability so that the effects of the substitution amount and sintering temperature were analyzed. XRD was used for the structural analysis of produced material, which in turn, showed the same cubic spinel structure as $LiMn_2O_4$ despite the substitution of $Fe^{3+}$. During the synthesis of $LiFe_yMn_{2-y}O_4$, as the sintering temperature and the doping amount of Fe(y=0.05, 0.1, 0.2)were increased, grain growth proceeded which in turn, showed a high crystalline and a large grain size, certain morphology with narrow specific surface area and large pore volume distribution was observed. In order to examine the ability for the practical use of the battery, charge-discharge tests were undertaken. When the substitution amount of $Fe^{3+}\;into\;LiMn_2O_4$ increased, the initial discharge capacity showed a tendency to decrease within the region of $3.0\~4.2V$ but when charge-discharge processes were repeated, other capacity maintenance properties turned out to be outstanding. In addition, when the sintering temperature was $800\~850^{\circ}C$, the initial capacity was small but showed very stable cycle performance. According to EVS(electrochemical voltage spectroscopy) test, $LiFe_yMn_{2-y}O_4(y=0,\;0.05,\;0.1,\;0.2)$ showed two plateau region and the typical peaks of manganese spinel structure when the substitution amount of $Fe^{3+}$ increased, the peak value at about 4.15V during the charge-discharge process showed a tendency to decrease. From the previous results, the local distortion due to the biphase within the region near 4.15V during the lithium extraction gave a phase transition to a more suitable single phase. When the transition was derived, the discharge capacity decreased. However the cycle performance showed an outstanding result.