• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.409-414
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• 1999

The influence of ion beam energy and reactive oxygen partial pressure on the electrical and crystallographic characteristics of transition metal oxide compound(Cr0x) film was studied in this paper. Chromium oxide films were prepared onto the coverglass using Ion Beam Sputter Deposition(1BSD) technique according to the processing conditions of the partial pressure of reactive oxygen gas and ion beam energy. Crystallinity and grain size of as-deposited films were analyzed using XRD analysis. Thickness and Resistivity of the films were measured by $\alpha$-step and 4-point probe measurement. As results, according to the XRD, XPS and resistivity measurement, the deposited films were the cermet type films which has a crystal structure including amorphous oxide(a-oxide) phase and metal Cr phase simultaneously. The increasernent of the ion b m energy during the deposition process happened to decreasernent of metal Cr grain size and the rapid change of resistivity above the critical $O_2$ partial pressure.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.515-515
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• 2007

$LiCoO_2$ powder was synthesized by Sol-Gel method using inorganic materials. The starting materials, $CH_3COOLi^*2H_2O\;and\;Co(CH_3COO)_2{^*}4H_2O$, were mixed in the atomic ratio Li/Co of 1 and dissolved in i-propanol with acetic acid. The solution was dried for gelation, and finally obtained the pre-powder. The pre-powder were studied by thermal analysis. Based on the TGA result, heat treatment was performed at various temperature(500 to $800^{\circ}C$) for 2h in air atmosphere. The crystal structure, morphology, electrochemical property were carried out using XRD, SEM, cyclic voltammetry(CV).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.116-117
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• 2006

I-D ZnO nanostructures were fabricated by thermal evaporation method on Si(100), GaN and $Al_2O_3$ substrates without a catalyst at the reaction temperature of $700^{\circ}C$. Only pure Zn powder was used as a source material and Ar was used as a carrier gas. The shape and growth direction of synthesized ZnO nanostructures is determined by the crystal structure and the lattice mismatch between ZnO and substrates. The ZnO nanostructure on Si substrate were inclined regardless of their substrate orientation. The origin of ZnO/Si interface is highly lattice-mismatched and the surface of the Si substrate inevitably has the $SiO_2$ layer. The ZnO nanostructure on the $Al_2O_3$ substrate was synthesized into the rod shape and grown into particular direction. For the GaN substrate, however, ZnO nanostructure with the honeycomb-like shape was vertically grown, owing to the similar lattice parameter with GaN substrate.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.7
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• pp.517-520
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• 2010

Lead-free $0.9(Na_{0.52}K_{0.48})NbO_3$ - $0.1LiTaO_3$ piezoelectric ceramics doped with $Ag_2O$ (0-4 mol%) have been prepared by the conventional mixed oxide method. The structural and electrical properties were analyzed in order to find its potential applications. The crystal structure of 1-4 mol% Ag doped $0.9(Na_{0.52}K_{0.48})NbO_3$-$0.1LiTaO_3$ lead free piezoelectric ceramics were investigated for several sintering temperatures ($1100^{\circ}C$) by the use of X-ray diffraction analysis. In order to analyze the effect of Ag dopants on the $0.9(Na_{0.52}K_{0.48})NbO_3$-$0.1LiTaO_3$ ceramic, the diffraction intensity ratio of the (002) to (200) planes were calculated from the X-ray diffraction patterns of the ceramic samples.

• Korean Journal of Materials Research
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• v.30 no.7
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• pp.338-342
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• 2020

Tin oxide (SnO₂) nanocrystals are synthesized by a thermal evaporation method using a mixture of SnO₂ and Mg powders. The synthesis process is performed in air at atmospheric pressure, which makes the process very simple. Nanocrystals with a belt shape start to form at 900 ℃ lower than the melting point of SnO₂. As the synthesis temperature increases to 1,100 ℃, the quantity of nanocrystals increases. The size of the nanocrystals did not change with increasing temperature. When SnO₂ powder without Mg powder is used as the source material, no nanocrystals are synthesized even at 1,100 ℃, indicating that Mg plays an important role in the formation of the SnO₂ nanocrystals at temperatures as low as 900 ℃. X-ray diffraction analysis shows that the SnO₂ nanocrystals have a rutile crystal structure. The belt-shaped SnO₂ nanocrystals have a width of 300~800 nm, a thickness of 50 nm, and a length of several tens of micrometers. A strong blue emission peak centered at 410 nm is observed in the cathodoluminescence spectra of the belt-shaped SnO₂ nanocrystals.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.122-122
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• 2000

Magnesium oxide is thermodynamically very stable, has a low dielectric constant and a low refractive index, and has been widely used as substrate for growing various thin film materials, particulary oxides of the perovskite structure. There has been a considerable interest in integrating the physical properties of these oxides with semiconductor materials such as GaAs and Si. In this regard, it is considered very important to be able to grow MgO buffer layers epitaxially on the semiconductors. Various oxide films can then be grown on such buffer layers eliminating the need for using MgO single crystal substrates. Vapor phase epitaxy of magnesium oxide has been accomplished on Si(001) substrates in a high vacuum chamber using the single precursor methylmagnesium tert-butoxide in the temperature range 750-80$0^{\circ}C$. For the epitaxy of the MgO films, SiC buffer layers had to be grown on Si(001). The films were characterized by reflection high energy electron diffraction (RHEED) in situ in the growth chamber, and x-ray diffraction (XRD), x-ray pole figure analysis, scanning electron microscopy (SEM), and x-ray photoelectron spectroscopy (XPS) after the growth.

• Journal of the Korean Society for Precision Engineering
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• v.33 no.5
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• pp.357-362
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• 2016

Various species of insects display vivid colors, widely known as 'structural color' due to their optical interference. Morpho butterflies are famous for their brilliant iridescent colors, which arise from the photonic-nanostructures of optical interference on their wings. In this paper, we outline the results of a comparative study of the optical properties of bio-inspired Morpho butterfly structures with the widely known Distributed Bragg Reflector (DBR), conducted using a rigorous coupled-wave analysis (RCWA) method for the two structures. Almost analogous tendencies were observed for both Morpho and DBR structures. With variation in the surrounding media, however, Morpho structures showed an obvious peak shift while no significant changes were observed in DBR, which can be applicable.

• Journal of Integrative Natural Science
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• v.5 no.3
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• pp.168-174
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• 2012

Gal (1-3) receptors are members of GPCR superfamily with seven transmembrane helices. The neuropeptide galanin mediates its effects through the receptor subtypes Gal1, Gal2, and Gal3 and has been implicated in anxiety and depression related behaviors. Galanin receptors are considered to be important targets for the development of novel antidepressant drugs. Owing to the importance of these receptors, a short communication about the sequential and structural studies about the functional Galanin (1-3) receptors has been reported. Structural studies have been hampered due to the lack of X-ray crystal structures. However with the availability of templates with close homologs comparative modeling could be encouraging. Sequence analysis was done for each receptors and homology modeling of each receptors were done with recently reported templates. Comparative analyses were done between these receptors to identify the relationships between them sequentially. Phylogram was generated between these receptors to identify the close homologue between this receptor and found that Gal2 and Gal3 receptors are closer. Our results could be useful for further structure based drug design targeting Gal1, Gal2 and Gal3 receptors.

• Journal of the Korea Institute of Building Construction
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• v.21 no.2
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• pp.97-104
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• 2021

This study aims to develop non-sintered cement that can replace the Portland cement by utilizing industrial by-products. As a suggestion, the physical properties of non-sintered cement mortar depending on the curing method were investigated with ground granulated blast furnace slag, class C fly ash, and class F fly ash. As a result of the study, it was found that the strength performance and absorption rate were improved through the heat treatment process after steam curing. It was confirmed through crystal phase analysis that the hydration was accelerated after heat treatment, and the bonding material formed a dense internal structure.

• Journal of the Korean Solar Energy Society
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• v.39 no.1
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• pp.33-40
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• 2019

Al-doped ZnO (AZO) thin films were synthesized on Si(100) wafers via plasma enhanced metal organic chemical vapor deposition (PE-MOCVD) method using diethyl zinc (DEZ) and N-methylpyrrolidine alane (MPA) as precursors. Effects of Al/Zn mixing ratio, plasma power on the surface morphology, crystal structure, and electrical property were investigated with SEM, XRD and 4-point probe measurement respectively. Growth rate of the film decreased slightly with increasing the Al/Zn mixing ratio, however electrical property was enhanced and resistivity of the film decreased greatly about 2 orders from $9.5{\times}10^{-1}$ to $8.0{\times}10^{-3}{\Omega}cm$ when the Al/Zn mixing ratio varied from 0 to 9 mol%. XRD analysis showed that the grain size increased with increasing the Al/Zn mixing ratio. Growth rate and electrical property were enhanced in a mild plasma condition. Resistivity of AZO film decreased down to $7.0{\times}10^{-4}{\Omega}cm$ at an indirect plasma of 100 W condition which was enough value to use for the transparent conducting oxide (TCO) material.