• 제어로봇시스템학회:학술대회논문집
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• 2004.08a
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• pp.1659-1661
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• 2004

Measurement of supersaturation is important in crystallization processes, because it is one of key factors to control crystal size distribution and shape determining product quality. A monitoring system of the supersaturation using a quartz crystal sensor is applied to the supersaturation measurement. From the variation of resonant frequency, the beginning of the formation of salt crystal on the sensor surface is detected while the sensor is directly cooled down. The degree of supersaturation is computed from the solubility difference at the temperatures of the salt solution and the sensor. The performance of the propsed system of the supersaturation measurement is examined by applying the system to the crystallization of three different salt solutions. The experimental outcome compared with eye observation result and photographic analysis indicates that the proposed system is effective and useful to determine the supersaturation in the crystallization process. In addition, the microscopic monitoring of the initial stage crystallization is available with the sensor system.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.30 no.4
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• pp.136-142
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• 2020

Crystallization of zinc crystalline glaze requires demanding conditions such as the formation of a nucleating agent and the amount of nucleating agent, and growth of crystalline. Zinc crystalline glaze is hard to utilize in the industry because of its narrow range of the firing temperature, and the crystallization's dependency on the quality of zinc. Stimulation of zinc crystallization and formation of frit enable zinc crystalline glaze to be reconstituted in a various range of firing schedules, leading to the development of a competitive industrial glaze.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.12
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• pp.1045-1057
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• 2009

The authors investigated the InGaN/GaN multi-quantum well blue light emitting devices with the implementation of the photonic crystals fabricated at the top surface of p-GaN layer and the bottom interface of n-GaN layer. The top photonic crystals result in the lattice-dependent photoluminescence spectra at the wavelength of 450 nm and however, the bottom photonic crystal shows a big shift of the photoluminescence peak from 444 nm to 394 nm. The sample with the bottom photonic crystal structure also shows the lasing effect at the wavelength of 468 nm. Furthermore, the quality enhancement for the crystal growth of GaN thin film on the bottom photonic crystal comes from the modulated compressive stress which was measured by the micro-Raman spectroscopy.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1998.09a
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• pp.53-53
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• 1998

Four valence of Chromium ion doped Yttrium Aluminum Garnet crystals were grown by Floating Zone and Czochralski methods. Changes of valence for Chromium (3+) ion to Chromium (4+) were achieved by substitution of Yttrium ion in dodecahedral site to Calcium and by substitution of Aluminum in octahedral site to Magnesium. Growth conditions for high quality of crystals were investigated. Grown crystals were cut and polished and then observed various types of defects. Characterizations by means of measurement of density and lattice parameter as a function of solidification fraction were performed. Results of Q-switching test using grown crystals were also reported.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.159-160
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• 2006

$AgGaSe_2$ single crystal thin films grown by using hot wall epitaxy (HWE) system. The single crystal thin films were investigated by photoluminescence and double crystal X-ray diffraction(DCXD) measurement. From the photoluminescence measurement of $AgGaSe_2$ single crystal thin film, we observed free excition ($E_x$) observable only in high quality crystal and neutral bound exciton ($D^{\circ}$,X) having very strong peak intensity. And, the full width at hall maximum and binding energy of neutral donor bound excition were 8 meV and 14.1 meV, respectively. By Haynes rule, an activation energy of impurity was 141 meV.

• Journal of the Mineralogical Society of Korea
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• v.10 no.1
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• pp.50-59
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• 1997

the crystal structure of pale green gem-quality olivine from Bisbee mine,Arizona, (Mg1.83Fe0.18)Si0.99O4, a=4.7608(4)$\AA$, c=5.9903(6)$\AA$, c=5.9903(4)$\AA$, V=291.49(1)$\AA$, Pbnm, Z=4 has been refined by both single-crystal and Rietveld methods to R(%) indices of 2.20 and 9.07, respectively. Comparison of site occupancies, cell dimensions, atomic coordinations, and interatomic distances/angles obtained from both methods shows that the Rietveld method produces more accurate site scattering values, cell dimension, and atomic positions than the single-crystal method. This indicates that the Rietveld method is a useful technique for the structural characterization and crystal-chemical study of powdered samples of natural minerals and synthetic materials.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1998.09a
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• pp.71-71
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• 1998

Transition metal ions, such as Sc, V, Cr and Fe, doped rutile crystals were grown by Floating Zone method. Growth conditions for high quality of crystals depending on the concentration of doped ions were investigated. Grown crystals were cut and polished to thin wafers, and then various types of defects such as homogeneities, low angle grain boundaries, scattering centers, and oxygen vacancies were analyzed. The effects of transition metal ions on defect formation are discussed. Results and discussions on absorption and fluorescence spectra and electrical properties of grown crystals were also reported.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.7 no.3
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• pp.384-392
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• 1997

Potassium lithium niobate(KLN) single crystal for a nonlinear-optic material, which changes the wavelength of lasers, has a ferroelectric tetragonal tungsten bronze structure at room temperature. It has been very hard to get single crystals of good quality due to the cracks during cooling process. In order to investigate the composition change due to the evaporation of solution during the growth, the thermogravimetric analysis was carried out. In atmospheric condition at $1000^{\circ}C$ which is about $10^{\circ}C$ higher than the crystal growing temperature, the weight change was negligible amount of $1.46{\times}10^{-5}$g/($\textrm{cm}^2$hr). By using both the Pt plate as the nucleation site and the slow cooling method with temperature fluctuation, KLN single crystal of good quality of size 1 cm could be obtained. The phase transition temperature was $490^{\circ}C$, which was higher than that reported by other researchers of the other composition. The optical anisotropy due to the absorption of OH-band exists in the range of IR.

• Korean Journal of Crystallography
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• v.6 no.2
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• pp.141-157
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• 1995

Single crystals of TeO2 with large diameter were grown by Czochralski technique with auto-diameter control system. The ratio of crystal to crucible was 60-70%. The effect of critical pulling and rotation rate on the crystal quality was studied. Optimum growth parameters for high quality crystal pulling rate was less than 1.2 mm/hr. The solid-liquid interface was convex at the rotation rate of 10-23 rpm and concave at the rotation rate of more than 25 rpm, depending on the size of crystal and crucible. The platinum concentration in the melts is one of the main factors of the constitutional supercooling and thus the bubble entrapment in the growing crystal. Growth axis was confirmed to {110} direction during the whole growth procedure. Infrared spectrometric study and dislocation density measurment by chemical etching method on the grown crystal were performed. Finally, the reasons of cooperation of striations, inclusions, and optical inhomogeneities were discussed.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.9
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• pp.795-800
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• 2008

A sublimation method using the SiC seed crystal and SiC powder as the source material is commonly adopted to grow SiC bulk single crystal. However, it has proved to be difficult to achieve the high quality crystal and the process reliability because SiC single crystal should be grown at very high temperature in closed system. The present research was focused to improve SiC crystal quality grown by PVT method through using the new inner guide tube. The new inner guide tube was designed to prevent the enlargement of polycrystalline region into single crystalline region and to enlarge the diameter of SiC single crystal. The 6H-SiC crystals were grown by conventional PVT process. The seed adhered on seed holder and the high purity SiC source materials are placed on opposite side in sealed graphite crucible surrounded by graphite insulation. The SiC bulk growth was conducted around 2300 $^{\circ}C$ of growth temperature and 50 mbar in an argon atmosphere of growth pressure. The axial thermal gradient across the SiC crystal during the growth was estimated in the range of 15${\sim}$20 $^{\circ}C$/cm.