• Proceedings of the KIEE Conference
• /
• 2007.07a
• /
• pp.1694-1695
• /
• 2007

DC-Motor is needed more and more sophisticated control to follow the highest precision of industrial automation and used in a number of control equipment or industrial fields. It is also useful to control single crystal(Al2O3) growth. It is possible to procure a quality crystal utilizing a DC-Motor, if you mix Hydrogen and Oxygen gas properly and keep proper temperature in accordance with time process. In this paper, we will study about electrical valve positioning system for the gas mixture to improve the quality of single crystal($Al_{2}O_{3}$) growth and we will design about realtime monitoring systems of the automatic gas contol DC- Motor for single crystal($Al_{2}O_{3}$) growth

• Journal of Information Display
• /
• v.1 no.1
• /
• pp.9-13
• /
• 2000

In liquid crystal displays, the display mode that represents initial liquid crystal alignment and method of applying voltage, mainly determines the image quality of display. Recently we have developed the fringe-field switching (FFS) mode exhibiting high image quality. In this paper, a pixel concept, manufacturing process, materials, and electro-optic characteristics of the FFS mode comparing with conventional in-plane switching mode, and its possible application to reflective type are discussed.

• Journal of the Optical Society of Korea
• /
• v.20 no.1
• /
• pp.125-129
• /
• 2016

In this study, we have investigated a high-temperature AlN nucleation layer and AlGaN epilayers on c-plane sapphire substrate by low-pressure metal-organic chemical vapor deposition (LP-MOCVD). High resolution X-ray diffraction (HRXRD), atomic force microscopy (AFM), scanning electron microscope (SEM) and Raman scattering measurements have been exploited to study the crystal quality, surface morphology, and residual strain of the HT-AlN nucleation layer. These analyses reveal that the insertion of an LT-AlN nucleation layer can improve the crystal quality, smooth the surface morphology of the HT-AlN nucleation layer and further reduce the threading dislocation density of AlGaN epifilms. The mechanism of inserting an LT-AlN nucleation layer to enhance the optical properties of HT-AlN nucleation layer and AlGaN epifilm are discussed from the viewpoint of driving force of reaction in this paper.

• Journal of the Korean Institute of Telematics and Electronics B
• /
• v.29B no.9
• /
• pp.27-36
• /
• 1992

A design of scanning electrode driving IC chip has been implemented aiming at the application to liquid crystal color television displays. The chip reflects the design characteristics of high quality liquid crystal panels and satisfies specifications of NTSC type color television displays. The design was verified using logic and circuit simulation, and fabricated using a high voltage CMOS process. A fully working die has been obtained that can be readily applicable to commercial color liquid crystal panels.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.19 no.7
• /
• pp.673-679
• /
• 2006

A sublimation method using the SiC seed crystal and SiC powder as the source material is commonly adopted to grow SiC bulk single crystal. However, it has proved to be difficult to achieve the high quality crystal and the process reliability because SiC single crystal should be grown at very high temperature in closed system. In this study, SiC crystal boules were prepared with different angles in trapezoid-shaped graphite seed holders using sublimation physical vapor transport technique (PVT) and then their crystal quality was systematically investigated. The temperature distribution in the growth system and the crystal shape were varied with angles in trapezoid-shaped graphite seed holders, which was successfully simulated using 'Virtual Reactor'. The SiC polytype proved to be the n-type 6H-SiC from the typical absorption spectrum of SiC crystal. The micropipe densities of SiC wafers in this study were measured to be < $100/cm^2$. Consequently, SiC single crystal with large diameter was successfully achieved with changing angle in trapezoid-shaped graphite seed holders.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.8 no.1
• /
• pp.29-35
• /
• 1998

Substrates, SiC raw materials and graphite crucibles were purified for growing the high quality 6H-SiC single crystal ingot. Especially, XRD data of raw materials were analyzed before and after purification. We have grown 6H-SiC single crystal ingot up to 33 mm in diameter and 11 mm in length and SiC wafer for using the substrate and observing the internal defects was about 33 mm in diameter and 0.5 mm in thickness. Utilizing optical microscpe and Raman spectroscopy, internal defects density and crystallinity of the SiC wafer obtained by purification processes before crystal growth were measured. As a result, micropipe density and planar defect density were 100/$\textrm{cm}^2$ and 30/$\textrm{cm}^2$ respectively. Therefore, high quality 6H-SiC single crystal could be grown because internal defects density of 6H-SiC single crystal ingot was decreased by the purification processes before crystal growth.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.25 no.3
• /
• pp.85-92
• /
• 2015

SiC crystals are well known for their true potential as high power devices and their crystal growth activity is actively carried out in domestic as well as in abroad. Until now the process to grow this crystal has been done by sublimation technique using radio frequency induction heating method. However in order to get better quality of SiC crystals, the stability of temperature is needed because SiC crystal tends to transform to other polytypes. So, the possibility of SiC crytals growth was evaluated by different heating method. This study aimed to observe whether the resistant heating method would show stable growth and better quality of SiC single crystal than that of RF induction heating. As a result, polycrystalline SiC crystals were grown by the growth rate of 0.02~0.5 mm/hr under the condition of $2100{\sim}2300^{\circ}C$ at the bottom side of the crucible and 10~760 torr. The polycrystalline SiC crystals with 0.25 and 0.5 mm in thickness were grown successfully without seed and characterized by optical stereo microscopic observation.

• Journal of the Korean Society of Propulsion Engineers
• /
• v.23 no.3
• /
• pp.44-50
• /
• 2019

HNIW is a high energy material and has four crystalline phases, it is known that the thermal properties of the material depend on the crystal phase. In this sturdy, the viscosity, mechanical and burning properties of a solid propellant with nitrate ester polyester(NEPE) system with respect to the crystal phases of HNIW. According to the crystal phase of HNIW, the mechanical properties of the cured propellant did not change considerably, however differences were observed in the burning properties. Considering both a high density and stable burning properties, the optimum crystal phase of HNIW can be identified as the main factor influencing to the NEPE system propellant.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2005.05a
• /
• pp.100-103
• /
• 2005

Homogeneously aligned nematic liquid crystal modes are representatively the -FFS (fringe-field switching) mode using liquid crystal (-LC) with negative dielectric anisotropy, the +FFS mode and the IPS (in-plane switching) mode using +LC with positive dielectric anisotropy. In view of image quality evaluation standard of LCD, we compared characteristics of the brightness, the contrast ratio (CR) and color shift when the modes have respectively optimized phase retardation values $(d{\Delta}n)$. Consequently, in the most sensitively viewing angle of a man's physical vision, both FFS modes have advantage over the IPS mode from the brightness & the CR point of view. We are also confirmed that the +FFS mode out of them shows the smallest color shift according to all viewing directions in grey levels.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.35 no.6
• /
• pp.626-630
• /
• 2022

A 100 mm × 50 mm-sized (100) gallium oxide (Ga₂O₃) single crystal ingot was successfully grown by edge-defined film-fed growth (EFG). The preferred orientation and the quality of grown Ga₂O₃ ingot were compatible with a commercial Ga₂O₃ substrate by showing strong (100) orientation behaviors and 246 arcsec in X-ray rocking curve. Raman characterization was also performed for both samples; thereby providing various Raman-active characteristics of Ga₂O₃ crystals. In particular, we observed A_g(5) and A_g(10) peaks of Raman active mode, directly related to the impurity of the grown Ga₂O₃ crystal. Hence, the comparison of the crystal quality and Raman analysis might be useful for further enhancement of Ga₂O₃ single crystal quality in the future.