• 대한화학회지
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• 제65권1호
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• pp.58-61
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• 2021

• 한국결정성장학회지
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• 제17권4호
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• pp.160-164
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• 2007

Carbon nanofibers were deposited on silicon oxide substrate by thermal chemical vapor deposition method. For the enhancement of the characteristics of carbon nanofibers, the source gases ($C_2H_2,\;H_2$) flows were intentionally manipulated as the cyclic on/off modulation of $C_2H_2$ flow. By the cyclic modulation process during the initial deposition stage, the formation density of carbon nanofibers on the substrate could be much more enhanced. The diameter of as-grown carbon nanofibers was also reduced by the cyclic modulation process. The cause for the variation in the characteristics of carbon nanofibers by the cyclic modulation process was discussed in association with the hydrogen gas etching ability.

• 한국결정성장학회지
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• 제21권3호
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• pp.119-123
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• 2011

Carbon nanotilaments (CNFs) could be synthesized on nickel catalyst layer-deposited silicon oxide substrate using $C_2H_2$ and$H_2$ as source gases under thermal chemical vapor deposition system. By the incorporation of $SF_6$ as a cyclic modulation manner, the geometries of carbon coils-related materials, such as nano-sized coil and wave-like nano-sized coil could be observed on the substrate. The characteristics (formation density and morphology) of as-grown CNFs with or without $SF_6$ incorporation were investigated. Diameter size reduction for the individual CNFs-related shape and the enhancement of the formation density of CNFs-related material could be achieved by the incorporation of $SF_6$ as a cyclic modulation manner. The cause for these results was discussed in association with the slightly increased etching ability by $SF_6$ addition and the sulfur role in SF 6 for the geometry change.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2003년도 추계학술발표강연 및 논문개요집
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• pp.132-132
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• 2003

Second-order nonlinear optical(NLO) materials have been extensively studied for applications in photonic devices, such as frequency doubling and electro-optical(EO) modulation, because of their large optical nonlinearity, excellent processibility, low dielectric constant, and high laser damage thresholds. The poling behaviour of NLO chromophore in organic/inorganic matrixes showed the randomization of poled NLO chromophore in the absence of poling Held. The liquid crystal molecules in a droplet showed a long-range orientational order along a director. Therefore, liquid crystal effects on poling behaviour of NLO chromophore dispersed in organically modified inorganic sol-gel materials were investigated. Using sol-gel process for the development of NLO material has received increasing attention, Organically modifked inorganic NLO sol-Eel materials are obtained via incorporation of the organic NLO active chromophore into an alkoxysilane based inorganic network. One of the most important thing in this works was that tetraethoxysilane(TEOS) and methyltrimathoxysilane(HTMS) were used as precursor followed by hydrolysis and condensation without using any acidic catalyst during the process. The NLO chromophores in the liquid crystal nanodomains were well mixed with I/O hybrid matrix, deposited on transparent ITO-coated glasses. The poling behaviour of liquid crystal effects of NLO chromophore dispersed in I/O hybrid matrix were investigated by UV-vis spectroscopy. Size distribution and morphology of the NLO chromophores doped in the liquid crystal nanodomains dispersed in I/O hybrid matrix were investigated by SEM.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.314-314
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• 2012

The dilute magnetic semiconductors (DMS) have been developed to multi-functional electro-magnetic devices. Specially, the Si based DMS formed by ion implantation have strong advantages to improve magnetic properties because of the controllable effects of carrier concentration on ferromagnetism. In this study, we investigated the deep level states of Fe- and Co-ions implanted Si wafer during rapid thermal annealing (RTA) process. The p-type Si (100) wafers with hole concentration of $1{\times}10^{16}cm^{-3}$ were uniformly implanted by Fe and Co ions at a dose of $1{\times}10^{16}cm^{-2}$ with an energy of 60 keV. After RTA process at temperature ranges of $500{\sim}900^{\circ}C$ for 5 min in nitrogen ambient, the Au electrodes with thickness of 100 nm were deposited to fabricate a Schottky contact by thermal evaporator. The surface morphology, the crystal structure, and the defect state for Fe- and Co- ion implanted p-type Si wafers were investigated by an atomic force microscopy, a x-ray diffraction, and a deep level transient spectroscopy, respectively. Finally, we will discuss the physical relationship between the electrical properties and the variation of defect states for Fe- and Co-ions implanted Si wafer after RTA.

• 한국결정성장학회지
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• 제8권4호
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• pp.599-604
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• 1998

본 논문은 PZT 박막의 기억소자 응용을 위한 Pt 그리고 RuO2 박막을 조사하였다. 초고주파 마그네트론 스퍼터링 방법을 이용하여 하부전극을 성장하였으며, 조사된 실험변수는 기판온도, 가스 부분압, RF 전력 그리고 후열처리 등이다. 기판온도는 Pt, $RuO_2$박막의 결정구조 뿐만 아니라 표면구조 및 비저항 성분에 크게 영향을 주었다. Pt 박막의 XRD 분석으로 기판온도가 상온에서 $200^{\circ}C$까지는 (111) 그리고 (200) 면이 혼재하는 결과를 보였으나 $300^{\circ}C$에서는 (111) 면으로 우선 방위 성장 특성을 보였다. XRD와 AFM 해석으로부터 Pt 박막 성장시 기판온도 $300^{\circ}C$, RF 전력 80W가 추천된다. 산소 분압비를 0~50%까지 가변하여 조사한 결과 산소가 5% 미만으로 공급되면 Ru 금속이 성장되고, 산소 분압비가 10 ~40%까지는 Ru와 $RuO_2$ 상이 공존하였으며 산소 분압비가 50%에서는 순수한 $RuO_2$상만이 검축되었다. 이 결과로부터 RuO2/Ru 이층 구조의 하부전극 형성이 산소 가스 부분압을 조절하여 한번의 공정으로 성장 가능하며, 이런 구조를 이용하면 금속의 낮은 비저항을 유지하면서도 PZT 박막의 산소 결핍에 의한 기억소자의 피로도 문제를 완화할 것으로 사료된다. 후 열처리 온도를 상온에서부터 $700^{\circ}C$까지 증가할 때 Pt와 $RuO_2$의 비저항 성분은 선형적 감소 추세를 보였다. 본 논문은 강유전체 기억소자 응용을 위한 최적화된 하부전극 제적조건을 제시한다.