• 제목/요약/키워드: Crystal growth mechanism

검색결과 182건 처리시간 0.115초

초음파 가진에 따른 열전달 향상에 관한 연구 (An Experimental Study of enhancing heat transfer by Ultrasonic Vibration)

  • 윤정환;오율권;차경옥
    • 대한기계학회:학술대회논문집
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    • 대한기계학회 2001년도 추계학술대회논문집B
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    • pp.235-240
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    • 2001
  • This study presents experimental work on phase change heat transfer, in order to increase heat transfer rate, ultrasonic vibrations were introduced. Solid-liquid phase change occurs in a number of situations of practical interest. This study reveal that ultrasonic vibrations accompany the effects like agitation, acoustic streaming, cavitation, and oscillating fluid motion. Such effects are a prime mechanism in the overall melting process when ultrasonic vibrations are applied. Some common examples include the melting of edible oil, metallurgical process such as casting and welding, and materials science applications such as crystal growth. Therefore, this study presented the effective way to enhance phase change heat transfer.

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새로운 $NH_{3}-O_{2}$ 산화 방법(1) - 매카니즘 및 결정성 (A New $NH_{3}-O_{2}$Oxidation Method (1) - Mechanism and Crystal Properties)

  • 복은경;박선우;김철주
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1988년도 전기.전자공학 학술대회 논문집
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    • pp.360-362
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    • 1988
  • The new oxidation method was presented to grow the oxide layer by thermal reaction of $NH_{3}$ and $O_{2}$. The growth rate increased according as increase of partial pressure of $NH_{3}$. Optical transparent of the grown film was 12% compared with 17% of thermal oxidation when the wave number was $1,100cm^{-1}$. The oxide layer with good quaility was obtained.

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페놀수지 표면의 탄화도전로 생성과 분석 (The Analysis and Formation of Conductivity Path at Surface of Phenolic Resin)

  • 노영수;박상택;김전원;송길목
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2007년도 Techno-Fair 및 추계학술대회 논문집 전기물성,응용부문
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    • pp.102-103
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    • 2007
  • Recently, the dependence of the electric energy is increased in accordance with a growth of industry. Therefore, scientific investigation is needed for the security of electrical safety and the judgement of accident causes. Accordingly, this paper consist of the analysis for the carbonization patterns of phenolic resin and the mechanism. As the follows, spider-legs as a carbide are generated around the rods, when the electric current flows on the surface of phenolic resin. The IR absorption peak generated by the thermal effects is appeared at about $1720cm^{-1}$. As the case of Joule's heat, the crystal of a carbide is generated beca use of the rarefied oxygen. It's estimated that the formation of carbonization conductivity as the currents are easily flowed.

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녹색기술을 이용하여 제작된 ZnO 나노선 (Fabrication of ZnO Nanowires by Green Technology)

  • 이근형
    • 대한금속재료학회지
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    • 제50권3호
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    • pp.233-236
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    • 2012
  • ZnO nanowires were fabricated through thermal evaporation of Zn or ZnS powder using solar energy. The Zn or ZnS powder was heated and evaporated by sunlight. The sunlight was concentrated on the Zn or ZnS powder by a converging lens and then the Zn or ZnS powder was evaporated and oxidized in air. After oxidation, ZnO nanowires were fabricated in the focal point. Strong ultraviolet emission, which corresponds to the near band-edge emission, was observed from the ZnO nanowires synthesized using Zn powder as a source material. Meanwhile, green emission, related to intrinsic defects such as oxygen vacancies, prevailed for the ZnO nanowires fabricated using ZnS powder. No catalysts were used in the fabrication of the ZnO nanowires, which suggested the ZnO nanowires were grown by a vapor-solid mechanism.

Preferred orientation of TiN thin films produced by Ion Beam Assist Deposition

  • Won, J.Y.;Kim, J.H.;Kang, H.J.;Baeg, C.H.;Park, S.Y.;Hong, J.W.;Wey, M.Y.
    • 한국진공학회지
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    • 제6권S1호
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    • pp.154-159
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    • 1997
  • The crystal structure properties of TiN thin films deposited on SKD61 steel and Si(100) substrates by Ion Beam Assisted Deposition have been studied to clarify the thin film growth mechanism by using XRD, RBS, SEM, and AFM. The preferred orientation of TiN thin films changes from (111) to (100) as increasing the assisted energy. This tendency is independent of the substrate structure. The TiN thin film grow with (100) direction having surface free energy minimum as the assisted energy increases.

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Growth and Characterization of GaN on Sapphire and Porous SWCNT Using Single Molecular Precursor

  • Sekar, P.V. Chandra;Lim, Hyun-Chul;Kim, Chang-Gyoun;Kim, Do-Jin
    • 한국재료학회지
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    • 제21권5호
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    • pp.268-272
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    • 2011
  • Due to their novel properties, GaN based semiconductors and their nanostructures are promising components in a wide range of nanoscale device applications. In this work, the gallium nitride is deposited on c-axis oriented sapphire and porous SWCNT substrates by molecular beam epitaxy using a novel single source precursor of $Me_2Ga(N_3)NH_2C(CH_3)_3$ with ammonia as an additional source of nitrogen. The advantage of using a single molecular precursor is possible deposition at low substrate temperature with good crystal quality. The deposition is carried out in a substrate temperature range of 600-750$^{\circ}C$. The microstructural, structural, and optical properties of the samples were analyzed by scanning electron microscopy, X-ray diffraction, Raman spectroscopy, and photoluminescence. The results show that substrate oriented columnar-like morphology is obtained on the sapphire substrate while sword-like GaN nanorods are obtained on porous SWCNT substrates with rough facets. The crystallinity and surface morphology of the deposited GaN were influenced significantly by deposition temperature and the nature of the substrate used. The growth mechanism of GaN on sapphire as well as porous SWCNT substrates is discussed briefly.

알루미나수화물(水和物)의 결정전이(結晶轉移)에 미치는 습도(濕度)의 영향(影響) (Effect of Humidity on Polymorphic Transformation of Hydrous Aluminum Oxide)

  • 이계주;류병태
    • Journal of Pharmaceutical Investigation
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    • 제13권1호
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    • pp.1-9
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    • 1983
  • The effect of humidity on crystallization and polymorphic transformation of hydrous aluminum oxide under various humidity at $37^{\circ}$ was examined by means of X-ray diffraction, scanning electron micrograph, IR spectra and DTA. The humidity was an important factor influencing crystallization of hydrous aluminum oxide. The growth or crystal was strongly accelerated by humidity. The aging process is assumed that it is composed of two seperate steps, an increase of the diffraction around $36{\sim}42^{\circ}$, and an appearance and its development of the peak at $18{\sim}20^{\circ}$ of $2{\theta}$ value. The former is considered to be nucleation and the latter correspond to the growth period on crystallization. The crystalline form of aging products was various depending on the degree of humidity, directly it leads to the eventual formation of bayerite in more than 72%, $b{\"{o}}hmite$ in 50% and resembled to Nordstandite in 0% relative humidity, respectively but once formed, it was mostly stable in each surroundings and does not transform to the other more stable form in solid state even after aging for five years. The mechanism responsible for aging is further polymerization process of six-membered rings by deprotonation-dehydration reaction in which positively charged polynuclear hydroxy aluminum complexes formed in the presence of moisture are joined at their edges by double hydroxide bridges.

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전남 구시광산에서 산출하는 엽납석 결정의 표면 미세형태 (Surface Microtopography of Pyrophyllite Crystals from Gussi Deposit, Korea)

  • Mayumi Jige;Ryuji Kitagawa;Hwang, Jin-Yeon
    • 한국광물학회지
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    • 제17권2호
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    • pp.115-121
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    • 2004
  • 한국 전남지역 구시광상에서 채취한 엽납석 시료에 대해 금 부착방법으로 투과전자현미경 (TEM)을 사용하여 결정표면의 미세 형태를 관찰하였다. 그 결과, 일라이트 및 고령석과 같은 점토광물에 일반적인 나선형 계단형태와 달리, 구시광상 엽납석의 (001)표면에는 다소 기형적인 원형의 섬 모양을 가진 폐쇄된 계단형태가 특징적으로 잘 관찰되었다. 이러한 관찰결과로 보아, 구시광상 엽납석은 다른 점토광물에 비하여 상대적으로 높은 온도와 혹은 더 과포화된 열수용액에서 성장한 것으로 사료된다. 구시광상 엽납석의 미세 형태는 서남 일본에 위치하는 쇼코잔광산과 우쿠광산의 엽납석과 매우 유사하므로, 엽납석의 결정성장 매카니즘도 이들과 거의 동일할 것으로 보인다.

Analysis of In/Ga Inter-Diffusion Effect on the Thermodynamical Properties of InAs Quantum Dot

  • Abdellatif, M.H.;Song, Jin Dong;Lee, Donghan;Jang, Yudong
    • Applied Science and Convergence Technology
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    • 제25권6호
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    • pp.158-161
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    • 2016
  • Debye temperature is an important thermodynamical factor in quantum dots (QDs); it can be used to determine the degree of homogeneity of a QD structure as well as to study the interdiffusion mechanism during growth. Direct estimation of the Debye temperature can be obtained using the Varshni relation. The Varshni relation is an empirical formula that can interpret the change of emission energy with temperature as a result of phonon interaction. On the other hand, phonons energy can be calculated using the Fan Expression. The Fan expression and Varshni relation are considered equivalent at a temperature higher than Debye temperature for InAs quantum dot. We investigated InAs quantum dot optically, the photoluminescence spectra and peak position dependency on temperature has been discussed. We applied a mathematical treatment using Fan expression, and the Varshni relation to obtain the Debye temperature and the phonon energy for InAs quantum dots sample. Debye temperature increase about double compared to bulk crystal. We concluded that the In/Ga interdiffusion during growth played a major role in altering the quantum dot thermodynamical parameters.

Synthesis and characterization of doxorubicin hydrochloride drug molecule-intercalated DNA nanostructures

  • Gnapareddy, Bramaramba;Deore, Pragati Madhukar;Dugasani, Sreekantha Reddy;Kim, Seungjae;Park, Sung Ha
    • Current Applied Physics
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    • 제18권11호
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    • pp.1294-1299
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    • 2018
  • In this paper, we demonstrate the feasibility of constructing DNA nanostructures (i.e. DNA rings and double-crossover (DX) DNA lattices) with appropriate doxorubicin hydrochloride (DOX) concentration and reveal significant characteristics for specific applications, especially in the fields of biophysics, biochemistry and medicine. DOX-intercalated DNA rings and DX DNA lattices are fabricated on a given substrate using the substrateassisted growth method. For both DNA rings and DX DNA lattices, phase transitions from crystalline to amorphous, observed using atomic force microscopy (AFM) occurred above a certain concentration of DOX (at a critical concentration of DOX, $30{\mu}M$ of $[DOX]_C$) at a fixed DNA concentration. Additionally, the coverage percentage of DNA nanostructures on a given substrate is discussed in order to understand the crystal growth mechanism during the course of annealing. Lastly, we address the significance of optical absorption and photoluminescence characteristics for determining the appropriate DOX binding to DNA molecules and the energy transfer between DOX and DNA, respectively. Both measurements provide evidence of DOX doping and $[DOX]_C$ in DNA nanostructures.