• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.13 no.1
• /
• pp.1-4
• /
• 2003

In the present work we consider morphological structure of the faces of BGO crystals grown by Czochralski technique under the conditions of low temperature gradient (0.1~1 deg/cm) and interconnection between the morphological features of faces at the crystallization front and the formation of defects within the crystal volume. It is demonstrated that the {112} faces retain stability while the growing surface deviates from the crystallographic (112) plane up to 1 degree. At larger deviation, the region of the stable facet growth passes either to the region of macrosteps or to the region of normal growth. depending on conditions.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.18 no.4
• /
• pp.137-139
• /
• 2008

Floating zone, neutron transmutation-doped and magnetic Czochralski silicon crystals are being widely used for fabrication power devices. To improve the quality of these devices and to decrease their production cost, it is necessary to use large-diameter wafers with high and uniform resistivity. Recent developments in the crystal growth technology of Czochralski silicon have enable to produce Czochralski silicon wafers with sufficient resistivity and with well-controlled, suitable concentration of oxygen. In addition, using Czoehralski silicon for substrate materials may offer economical benefits, First, Czoehralski silicon wafers might be cheaper than standard floating zone silicon wafers, Second, Czoehralski wafers are available up to diameter of 300 mm. Thus, very large area devices could be manufactured, which would entail significant saving in the costs, In this work, the conventional Czochralski silicon crystals were grown with higher oxygen concentrations using high pure polysilicon crystals. The silicon wafers were annealed by several steps in order to obtain saturated oxygen precipitation. In those wafers high resistivity over $5,000{\Omega}$ cm is kept even after thermal donor formation annealing.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.11 no.1
• /
• pp.1-5
• /
• 2001

SiC single crystals were grown in the various condition of growth pressure and temperature in the sublimation growth. We observed the growth step morphology and the shapes on the surface of as-grown crystals using an optical microscope, and characterized the co-relations among the growth parameters by adapting the Burton, Carbera and Frank theory(BCF theory)for nucleation and crystal growth.

• Korean Journal of Crystallography
• /
• v.11 no.4
• /
• pp.207-211
• /
• 2000

In a Czochralski silicon single crystal, the relation between the growth twin and the crystal morphology was investigated. The growth twin is nucleated on the {111} facet planes near the growth ridges. When a {111} growth twin is formed in the <100> silicon crystal, the growth ridge where twin is nucleated will continuous through the twin plane. Other two ridges at the 90。 apart will be displaced about 33° and be deformed to facets. The ridge on the opposite side of twin nucleation will disappear by forming a slight hill. Because the growth ridges of silicon is due to the {111} planes, the variation in the growth ridge formation can be predicted clearly by considering the change of the {111} plane traces in the stereographic projection after twining.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2005.11a
• /
• pp.128-129
• /
• 2005

In this research, non-volatile memory effects and nano-crystal creation have been investigated in SiNx containing Si nano-crystals (Si-nc) produced by ICP-CVD and rapid thermal annealing. The quantum dots were created during rapid thermal annealing of Si-rich SiNx thin films. The quantum dot creation was analyzed with photoluminescence spectra, and in case of Si-rich SiNx, it is conformed that the quantum dots are formed easily at 750$\sim$800nm wavelength.

• Textile Coloration and Finishing
• /
• v.26 no.2
• /
• pp.143-149
• /
• 2014

The designed dye material, namely 2-(4-(9H-carbazol-9-yl)benzylidene) compound, was synthesized. After the reaction, the solid was filtered and purified by recrystalization with acetone/water. To confirm and analyze its synthesis and structural formation, the single crystal was prepared and its measurement was carried out. A yellow needle crystal of $C_{22}H_{13}N_3$ were made on a Rigaku R-AXIS RAPID diffractometer using graphite monochromated CuK${\alpha}$ radiation. All details were suggested and introduced to support and communicate this study.

• Journal of the Korean Ceramic Society
• /
• v.34 no.8
• /
• pp.834-842
• /
• 1997

Controlled Ca impurity implanted inner crack-like pore in the high purity alumina single crystal, sapphire, had been created by micro-fabrication technique, which includes ion implantation, photo-lithography, Ar ion milling, and hot press technique. The morphological change and the healing of cracklike pore in Ca doped high purity single crystal alumina, sapphire, during high temperature heat treatment in vacuum were observed using optical microscopy. The dot-like surface roughening was developed and hexagon like crystal appeared on inner surface of crack-like pore after heat treatment. Bar type crystals, probably CaO.6Al2O3, were observed on the inner surface after 1 hour heat treatment at 1, 50$0^{\circ}C$, but this bar type crystal disappeared after 1 hour heat treatment at 1, $600^{\circ}C$. This disappearance means that there should be a little increase of Ca solubility limit to alumina at this temperatures.

• Journal of the Korean Ceramic Society
• /
• v.52 no.3
• /
• pp.197-203
• /
• 2015

The colorization of $Zn_2SiO_4$ crystal glazes was investigated by adding nucleating seeds with various coloring agents. The addition of color fixing agents such as $Fe_2O_3$, $MnO_2$, and NiO with seeds caused changes in the colors of glazes. The crystallinity and crystal size were dependent on glaze composition and firing schedules. By controlling coloring agents and firing schedules, it was possible to create various colors and sizes of crystals in a zinc-based crystalline glaze.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2009.10a
• /
• pp.879-882
• /
• 2009

A pixel isolation wall of liquid crystal display is fabricated by the anisotropic photoreaction of a cinnamate based prepolymer. The various oligomers containing a cinnamate moiety were synthesized and used for the formation of the pixel isolation wall. The anisotropic photoreaction of cinnamate moiety was closely related with the liquid crystal orientation at the polymer wall boundary.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.12 no.1
• /
• pp.81-87
• /
• 1999

The surface morphology of liquid crystal alignment layer has been investigated by using Brewster angle microscope(BAM) for the first time. The samples used in this work for liquid crystal alignment layer were mechanically rubbed polyimide films. The rubbing pattern on this layer has been analyzed with the terms of microgroove and rubbing induced optical birefringence. For the mechanically rubbed surface, the geometrical factors of microgroove play the major role for the formation of rubbing pattern. We propose that the BAM can be used as a powerful tool not only for observing the rubbing pattern, but also for inspecting the surface defects.