• 제목/요약/키워드: Crystal formation

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고에너지밀도 캐패시터를 위해 PET 기판에 증착한 TiO2 박막의 특성 (Properties of TiO2 Thin Films Deposited on PET Substrate for High Energy Density Capacitor)

  • 박상식
    • 한국재료학회지
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    • 제22권8호
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    • pp.409-415
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    • 2012
  • $TiO_2$ thin films for high energy density capacitors were prepared by r.f. magnetron sputtering at room temperature. Flexible PET (Polyethylene terephtalate) substrate was used to maintain the structure of the commercial film capacitors. The effects of deposition pressure on the crystallization and electrical properties of $TiO_2$ films were investigated. The crystal structure of $TiO_2$ films deposited on PET substrate at room temperature was unrelated to deposition pressure and showed an amorphous structure unlike that of films on Si substrate. The grain size and surface roughness of films decreased with increasing deposition pressure due to the difference of mean free path. X-ray photoelectron spectroscopy (XPS) analysis revealed the formation of chemically stable $TiO_2$ films. The dielectric constant of $TiO_2$ films was significantly changed with deposition pressure. $TiO_2$ films deposited at low pressure showed high dissipation factor due to the surface microstructure. The dielectric constant and dissipation factor of films deposited at 70 mTorr were found to be 100~120 and 0.83 at 1 kHz, respectively. The temperature dependence of the capacitance of $TiO_2$ films showed the properties of class I ceramic capacitors. $TiO_2$ films deposited at 10~30 mTorr showed dielectric breakdown at applied voltage of 7 V. However, the films of 500~300 nm thickness deposited at 50 and 70 mTorr showed a leakage current of ${\sim}10^{-8}{\sim}10^{-9}$ A at 100 V.

가압반응기를 이용한 배연탈황석고로부터 α형 반수석고의 생성 (Preparation of Calcium Sulfate α-Hemihydrate from FGD Gypum in the Autoclave)

  • 박승수;김기형;안희수;박광규
    • 공업화학
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    • 제17권6호
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    • pp.619-624
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    • 2006
  • 유연탄을 연소하는 화력발전소의 탈황설비에서 생산된 배연탈황석고를 대상으로 가압반응기를 이용하여 수열반응을 통한 알파형 반수석고의 생성과정을 살펴보았다. 실험 결과 첨가제를 사용하지 않아도 반응온도 $120{\sim}140^{\circ}C$ 범위 하에서는 용해-재석출 기구에 의하여 알파형 반수석고가 생성되었으나 아스펙트 비가 매우 높은 침상형 결정이 생성되었다. 호박산나트륨을 첨가제로 주입한 결과 결정형상은 침상형에서 각주형으로 변화되었으며 혼수 비(water/powder ratio)는 33%까지 감소하였다. 호박산나트륨의 농도는 20 mM이 적정하였으며 반응도중 성형체의 붕괴를 방지하고 성형체의 기공부피에 의한 모세관 효과를 최대화하기 위한 최적의 성형체 성형압력은 $30kgf/cm^2$이었다.

NdFeB 영구자석에의 Al/Al2O3 다층막 코팅 및 부식 특성 (Preparation of Al/Al2O3 Multilayer Coatings on NdFeB Permanent Magnet and their Corrosion Characteristics)

  • 정재인;양지훈
    • 한국표면공학회지
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    • 제42권2호
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    • pp.86-94
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    • 2009
  • Various types of multilayer coatings including Al/$Al_2O_3$ structure have been prepared on Nd-Fe-B permanent magnet to modify the morphology of the coating and to enhance the corrosion resistance of the magnet. Magnetron sputtering has been employed to make the multilayer coatings. $Al_2O_3$sputtering conditions were optimized in reactive sputtering by varying the deposition parameters. The formation of $Al_2O_3$ film was confirmed from the binding energy shift measured by electron spectroscopy for chemical analysis. 3 types of coating structures were designed and prepared by magnetron sputtering. The coating structures consist of (1) single Al coating, (2) modified coatings having oxide or plasma treated layer in the middle of coating structure, and (3) Al/$Al_2O_3$ multilayer coatings. Surface and cross-sectional morphologies showed that Al/$Al_2O_3$ multilayer grew as a layered structure, and that very compact Zone 3 like structure were formed. X-ray diffraction peak showed that the crystal orientations of multilayer coatings were similar to that of the bulk powder pattern. Hardness increased drastically when the Al thickness was around 1im in the Al/$Al_2O_3$ multilayer. From the salt spray test and pressure cooker test, it has been shown that the multilayer coatings showed good corrosion resistance compared to Al single or modified layer coatings.

화염급냉 표면처리된 Cu-8.8Al-4.5Ni-4.5Fe 합금의 미세구조 분석 및 내마모성에 관한 연구 (Characterization of the Microstructure and the Wear Resistance of the Flame-Quenched Cu-8.8Al-4.5Ni-4.5Fe Alloy)

  • 이민구;홍성모;김광호;김경호;김흥회
    • 열처리공학회지
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    • 제17권6호
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    • pp.346-355
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    • 2004
  • The flame quenching process has been employed to modify the surfaces of commercial marine propeller material, aluminum bronze alloy (Cu-8.8Al-5Ni-5Fe), and the microstructure, hardness and wear properties of the flame-quenched layers have been studied. The thermal history was accurately monitored during the process with respect to both the designed maximum surface temperature and holding time. The XRD and EDX analyses have shown that at temperatures above $T_{\beta}$, the microstructure consisting of ${\alpha}+{\kappa}$ phases changed into the ${\alpha}+{\beta}^{\prime}$ martensite due to an eutectoid reaction of ${\alpha}+{\kappa}{\rightarrow}{\beta}$ and a martensitic transformation of ${\beta}{\rightarrow}{\beta}^{\prime}$. The ${\beta}^{\prime}$ martensite phase formed showed a face-centered cubic (FCC) crystal structure with the typical twinned structure. The hardness of the flame-quenched layer having the ${\alpha}+{\beta}^{\prime}$ structure was similar to that of the ${\alpha}+{\kappa}$ structure and depended sensitively on the size and distribution of hard ${\kappa}$ and ${\beta}^{\prime}$ phases with depth from the surface. As a result of the sliding wear test, the wear resistance of the flame-quenched layer was markedly enhanced with the formation of the ${\beta}^{\prime}$ martensite.

비휘발성 상변화메모리소자에 응용을 위한 칼코게나이드 $Ge_1Se_1Te_2$ 박막의 특성 (The Characteristics of Chalcogenide $Ge_1Se_1Te_2$ Thin Film for Nonvolatile Phase Change Memory Device)

  • 이재민;정홍배
    • 대한전기학회논문지:전기물성ㆍ응용부문C
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    • 제55권6호
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    • pp.297-301
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    • 2006
  • In the present work, we investigate the characteristics of new composition material, chalcogenide $Ge_1Se_1Te_2$ material in order to overcome the problems of conventional PRAM devices. The Tc of $Ge_1Se_1Te_2$ bulk was measured $231.503^{\circ}C$ with DSC analysis. For static DC test mode, at low voltage, two different resistances are observed. depending on the crystalline state of the phase-change resistor. In the first sweep, the as-deposited amorphous $Ge_1Se_1Te_2$ showed very high resistance. However when it reached the threshold voltage(about 11.8 V), the electrical resistance of device was drastically reduced through the formation of an electrically conducting path. The phase transition between the low conductive amorphous state and the high conductive crystal]me state was caused by the set and reset pulses respectively which fed through electrical signal. Set pulse has 4.3 V. 200 ns. then sample resistance is $80\sim100{\Omega}$. Reset pulse has 8.6 V 80 ns, then the sample resistance is $50{\sim}100K{\Omega}$. For such high resistance ratio of $R_{reset}/R_{set}$, we can expect high sensing margin reading the recorded data. We have confirmed that phase change properties of $Ge_1Se_1Te_2$ materials are closely related with the structure through the experiment of self-heating layers.

Formation and Intergrowth of the Superconducting Phase in the Bi2Sr2Can-1CunOx (n=2~4) System

  • Cheon, Min-Woo;Park, Yong-Pil
    • Transactions on Electrical and Electronic Materials
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    • 제5권5호
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    • pp.199-203
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    • 2004
  • Superconducting B $i_2$S $r_2$C $a_{n-l}$C $u_{n}$ $O_{x}$(n=2~4) thin films were prepared by single target DC-magnetron sputtering. And, that was compared with the B $i_2$S $r_2$C $a_{n-l}$C $u_{n}$ $O_{x}$(n=1~3) thin film fabricated by using the ion beam sputtering. Phase intergrowth among n=2-3, 3-4 and 4-5 phases was observed. The molar fraction of each phase in the mixed crystal of the deposited films was determined by x-ray diffraction analyses and investigated as a function of $O_2$ gas pressure during sputtering. We investigated the changes of the superconducting properties by molar fraction of each phase. Also, the thin film surface observation was carried out by atomic force microscope. The images show the average particle size decreases, and the distribution density of particles on the film surface was to increase with lower gas pressures. The fabrication conditions for selective growth of the single n=2, 3 and 4 phases in BiSrC $a_{n-l}$C $u_{n}$ $O_{x}$(n=2~4) thin film are discussed.e discussed.ussed.

Structural, Magnetic, and Optical Studies on Normal to Inverse Spinel Phase Transition in FexCo3-xO4 Thin Films

  • Kim, Kwang-Joo;Kim, Hee-Kyung;Park, Young-Ran;Ahn, Geun-Young;Kim, Chul-Sung;Park, Jae-Yun
    • 한국자기학회지
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    • 제15권2호
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    • pp.96-99
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    • 2005
  • Phase transition from normal- to inverse-spinel structure has been observed for $Fe_xCo_{3-x}O_4$ thin films as the Fe composition (x) increases from 0 to 2. The samples were fabricated as thin films by sol-gel method on Si(100) substrates. X-ray diffraction measurements revealed a coexistence of two phases, normal and inverse spinel, for $0.76{\le}x{\le}0.93$. The normal-spinel phase is dominant for $x{\le}0.55$ while the inverse-spinel phase for $x{\ge}l.22$. The cubic lattice constant of the inverse-spinel phase is larger than that of the normal-spinel phase. For both phases the lattice constant increases with increasing x. X-ray photoelectron spectroscopy measurements revealed that both $Fe^{2+}$ and $Fe^{3+}$ ions exist with similar strength in the x=0.93 sample. Conversion electron $M\ddot{o}ssbauer$ spectra measured on the same sample showed that $Fe^{2+}$ ions prefer the octahedral $Co^{3+}$ sites, indicating the formation of the inverse-spinel phase. Analysis on the measured optical absorption spectra for the samples by spectroscopic ellipsometry indicates the dominance of the normal spinel phase for low x in which $Fe^{3+}$ ions tend to substitute the octahedral sites.

플라즈마 보조 분자선 적층 성장법으로 성장한 ZnO 박막의 청색 발광 중심 (Blue Luminescent Center in Undoped ZnO Thin Films Grown by Plasma-assisted Molecular Beam Epitaxy)

  • 김종빈;노영수;변동진;박동희;최원국
    • 한국재료학회지
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    • 제19권5호
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    • pp.281-287
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    • 2009
  • ZnO thin film was grown on a sapphire single crystal substrate by plasma assisted molecular beam epitaxy. In addition to near band edge (NBE) emissions, both blue and green luminescences are also observed together. The PL intensity of the blue luminescence (BL) range from 2.7 to 2.9 eV increased as the amount of activated oxygen increased, but green luminescence (GL) was weakly observed at about 2.4 eV without much change in intensity. This result is quite unlike previous studies in which BL and GL were regarded as the transition between shallow donor levels such as oxygen vacancy and interstitial zinc. Based on the transition level and formation energy of the ZnO intrinsic defects predicted through the first principle calculation, which employs density functional approximation (DFA) revised by local density approximation (LDA) and the LDA+U approach, the green and blue luminescence are nearly coincident with the transition from the conduction band to zinc vacancies of $V^{2-}_{Zn}$ and $V^-_{Zn}$, respectively.

인쇄회로기판상의 금속 배선을 위한 구리 도금막 형성 : 무전해 중성공정 (Electroless Plated Copper Thin Film for Metallization on Printed Circuit Board : Neutral Process)

  • 조양래;이연승;나사균
    • 한국재료학회지
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    • 제23권11호
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    • pp.661-665
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    • 2013
  • We investigated the characteristics of electroless plated Cu films on screen printed Ag/Anodized Al substrate. Cu plating was attempted using neutral electroless plating processes to minimize damage of the anodized Al substrate; this method used sodium hypophosphite instead of formaldehyde as a reducing agent. The basic electroless solution consisted of $CuSO_4{\cdot}5H_2O$ as the main metal source, $NaH_2PO_2{\cdot}H_2O$ as the reducing agent, $C_6H_5Na_3O_7{\cdot}2H_2O$ and $NH_4Cl$ as the complex agents, and $NiSO_4{\cdot}6H_2O$ as the catalyser for the oxidation of the reducing agent, dissolved in deionized water. The pH of the Cu plating solutions was adjusted using $NH_4OH$. According to the variation of pH in the range of 6.5~8, the electroless plated Cu films were coated on screen printed Ag pattern/anodized Al/Al at $70^{\circ}C$. We investigated the surface morphology change of the Cu films using FE-SEM (Field Emission Scanning Electron Microscopy). The chemical composition of the Cu film was determined using XPS (X-ray Photoelectron Spectroscopy). The crystal structures of the Cu films were investigated using XRD (X-ray Diffraction). Using electroless plating at pH 7, the structures of the plated Cu-rich films were typical fcc-Cu; however, a slight Ni component was co-deposited. Finally, we found that the formation of Cu film plated selectively on PCB without any lithography is possible using a neutral electroless plating process.

천연가스 고체수송 및 저장을 위한 가스 하이드레이트 상평형 조건에 대한 연구 (Phase Equilibrium Conditions of Gas Hydrates for Natural Gas Solid Transportation and Storage)

  • 전용한;김종윤;김종보;김남진
    • 설비공학논문집
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    • 제20권4호
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    • pp.266-273
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    • 2008
  • Natural gas hydrates are ice-like solid substances, which are composed of water and natural gas, mainly methane. They have three kinds of crystal structures of five polyhedra formed by hydrogen-bonded water molecules, and are stable at high pressures and low temperatures. They contain large amounts of organic carbon and widely occur in deep oceans and permafrost regions. Therefore, they are expected as a potential energy resource in the future. Especially, $1m^3$ natural gas hydrate contains up to $172Nm^3$ of methane gas, de pending on the pressure and temperature of production. Such large volumes make natural gas hydrates can be used to store and transport natural gas. In this study, three-phase equilibrium conditions for forming natural gas hydrate were numerically obtained in pure water and single electrolyte solution containing 3 wt% NaCl. The results show that the predictions match the previous experimental values very well, and it was found that NaCl acts as an inhibitor. Also, help gases such that ethane, propane, i-butane, and n-butane reduce the hydrate formation pressure at the same temperature.