• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.226-229
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• 2004

A stoichiometric mixture of evaporating materials for $CuAlSe_2$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $CuAlSe_2$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the hot wall epitaxy (HWE) system. The source and substrate temperatures were $680^{\circ}C$ and $410^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $CuAlSe_2$ single crystal thin films measured with Hall effect by van der Pauw method are $9.24{\times}10^{16}\;cm^{-3}$ and $295\;cm^2/V{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the $CuAlSe_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)\;=\;2.8382\;eV\;-\;(8.68{\times}10^{-4}\;eV/K)T^2/(T+155K)$. The crystal field and the spin-orbit splitting energies for the valence band of the $CuAlSe_2$ have been estimated to be 0.2026 eV and 0.2165 eV at 10K, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the ${\Delta}so$ definitely exists in the ${\Gamma}_5$ states of the valence band of the $CuAlSe_2$. The three photocurrent peaks observed at 10K are ascribed to the $A_1-$, $B_1-$, and $C_1$-exciton peaks for n = 1.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.234-238
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• 2004

A stoichiometric mixture of evaporating materials for $CuInSe_2$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $CuInSe_2$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the hot wall epitaxy (HWE) system. The source and substrate temperatures were $620^{\circ}C$ and $410^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $CuInSe_2$ single crystal thin films measured with Hall effect by van der Pauw method are $9.62{\times}10^{l6}\;cm^{-3}$ and $296\;cm^2/V{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the $CuInSe_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)\;=\;1.1851\;eV\;-\;(8.99{\times}10^{-4}\;eV/K)T^2/(T+153K)$. The crystal field and the spin-orbit splitting energies for the valence band of the $CuInSe_2$ have been estimated to be 0.0087 eV and 0.2329 eV at 10K, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the ${\Delta}_{so}$ definitely exists in the $\Gamma_6$ states of the valence band of the $CuInSe_2$. The three photocurrent peaks observed at 10K are ascribed to the $A_1-$, $B_1-$, and $C_1$-exciton peaks for n = 1.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1997.06a
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• pp.187-196
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• 1997

Oxygen transfer in silicon melts during crystal growth under vertical magnetic fields is investigated numeriaclly and experimentally. A three-dimensional numerical simulation, including melt convection and oxygen transport, is carried out to understand how oxygen transfers in the melt under magnetic fields. Oxygen concentrations in single silicon crystals grown from the melt under these magnetic fields are experimentally measured by using an infrared absoption technique. The rusults obtained are compared to results from a numerical simualtion. An anomalous increase is observed in the oxygen concentration of the grown crystals under a magnetic field of about 0/03 tesla. The cause of this anomaly is identified as Benard instability, since the temperature at the bottom of the crucible is higher than that at interface. When the temperature at the bottom is decreased, the Benard cell can be removed, and a monotonical decrease in the oxygen concentration in the single crystals can be observed.

• Journal of the Korean Institute of Telematics and Electronics
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• v.25 no.4
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• pp.460-466
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• 1988

In this paper, the theory and experiments on the one-way optical image transmission through optical fiber by using degenerate four wave mixing in BSO single crystal are demonstrated. From the theoretical analysis, the diffraction efficiency of phase conjugate wave in BSO single crystal is greatly dependent on applied electric field intensity, diffraction grating period formed in the crystal and incident beam ratio, those are also in good agreement with the experimental results. Based on the experimental results, we have arranged the typical degenerate four wave mixing system in the optimal conditions (applied electric field, E. = 5kV/cm` diffraction grating period, 3\ulcorner` beam ratio of backward pump wave versus signal wave, 2.7) and realized one-way optical image transmission system through optical fiber using BSO single crystal.

• Macromolecular Research
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• v.15 no.5
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• pp.396-402
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• 2007

The dielectric properties and various pattern-forming states of dual-frequency material in a nematic phase, as well as its mixture containing low concentrations of reactive monomers, are reported. The dielectric relaxation behaviors of nematic MLC 2048 are presented and compared to its mixture containing both mesogenic and nonmesogenic reactive monomers. The sign-inversion frequency of the dielectric anisotropy was significantly shifted on the addition of small amounts of the reactive monomers. However, all three mixtures used in this study essentially exhibited the same field-induced instabilities at different frequencies and voltage domains of the applied electric field. A broad band of modulated states were found to exist above a critical voltage and within a voltage dependent frequency band in the vicinity of the sign-inversion frequency, $f_I$, of the dielectric anisotropy. As the $f_I$ of the mixtures shifted, so did the bands of the modulated state of the different mixtures and the temperatures, which were well matched with the measured $f_I$ value.

• Current Optics and Photonics
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• v.2 no.6
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• pp.525-531
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• 2018

The effect of eccentricity on dispersion and nonlinear properties of a photonic crystal fiber having elliptical air holes is investigated using a fully vectorial effective index method. It is found that the effective refractive index increases with increase of eccentricity. The dependence of dispersion and nonlinear properties of the PCF on the eccentricity of the air hole is investigated. It is revealed that eccentricity of the air hole affects the zero dispersion wavelength. Further, the nonlinear properties such as mode field area, nonlinear coefficient and self phase modulation of the Photonic crystal fibers are analyzed. The mode field area increases and the nonlinear coefficient decreases with increase in eccentricity. The variation of the self phase modulation with elliptical air hole is also discussed.

• Interaction and multiscale mechanics
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• v.2 no.1
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• pp.1-14
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• 2009

This paper proposes an interaction field concept based on the field theory of plasticity. Relative deformation between two arbitrary scales, e.g., macro and micro fields, is defined which can be implemented in the crystal plasticity-based constitutive framework. Differential geometrical quantities responsible for describing dislocations and defects in the interaction field are obtained, based on which dislocation density and incompatibility tensors are further derived. It is shown that the explicit interaction exists in the curvature or incompatibility tensor field, whereas no interaction in the torsion or dislocation density tensor field. General expressions of the interaction fields over multiple scales with more than three scale levels are derived and implemented into the present constitutive equation.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.51 no.8
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• pp.382-389
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• 2002

We present experimental results on the multiplexed and stack-wise recording of near-field holograms. Experiments on angular multiplexing show that the angular selectivity of near-field hologram is better than that of the conventional hologram. Experiments on stack-wise recording prove that near-fields originated from sub-diffraction-limit-size objects could be stored in a photorefractive crystal at 2mm apart from the crystal surface. In addition, to improve the data access and transfer time, a silicon nano-aperture array was introduced and applied to the recording of near-field holograms.

• Korean Journal of Materials Research
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• v.21 no.2
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• pp.73-77
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• 2011

Specific heat of a crystal is the sum of electronic specific heat, which is the specific heat of conduction electrons, and lattice specific heat, which is the specific heat of the lattice. Since properties such as crystal structure and Debye temperature do not change even in the superconducting state, the lattice specific heat may remain unchanged between the normal and the superconducting state. The difference of specific heat between the normal and superconducting state may be caused only by the electronic specific heat difference between the normal and superconducting states. Critical temperature, at which transition occurs, becomes lower than $T_{c0}$ under the influence of a magnetic field. It is well known that specific heat also changes abruptly at this critical temperature, but magnetic field dependence of jump of specific heat has not yet been developed theoretically. In this paper, specific heat jump of superconducting crystals at low temperature is derived as an explicit function of applied magnetic field H by using the thermodynamic relations of A. C. Rose-Innes and E. H. Rhoderick. The derived specific heat jump is compared with experimental data for superconducting crystals of $MgCNi_3$, $LiTi_2O_4$ and $Nd_{0.5}Ca_{0.5}MnO_3$. Our specific heat jump function well explains the jump up or down phenomena of superconducting crystals.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07a
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• pp.415-418
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• 2005

To understand effects of carbon nanotubes (CNTs) dispersed in nematic liquid crystal (NLC) on electro-optic characteristic and orientation of the LC, we CNT-doped homogeneously-aligned NLC cells driven by in-plane field have been fabricated. The CNTs were aligned with a LC director from the initial state to below critical ac field, whereas the CNTs disturbed the LC director field above critical ac field. We observed motional textures in the form of vertical stripes in the local area between electrodes, which were associated with a deformation of the LC director orientation. This indicates that CNTs start vibrating three dimensionally with translational motion. Further, the hysterisis studies of voltage-dependent transmittance under dc electric field show that the amount of residual dc, which is related to image sticking problem in liquid crystal displays, is greatly reduced due to ion trapping by CNTS while keeping operating voltage and response time about the same compared to the un-doped LC cell.