• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.11
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• pp.1008-1013
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• 2003

We have studied the effect of black matrix (BM) according to the dielectric anisotropy of liquid crystals (LCs) for a homogeneously aligned LC cell driven by fringe-electric field. The results show that for a LC with positive dielectric anisotropy (+LC) there is a large transmittance change when using a conductive BM, whereas the transmittance change is low for a LC with negative dielectric anisotropy (-LC). The conductive BM existing on top substrate produces vertical electric field, which makes the LC molecules be tilt upward from the substrate and have small twist angle for the +LC. However, for the -LC the conductive BM affects the LC distribution only slightly due to characteristic of the -LC orienting perpendicular to the field. Therefore, for the +LC the electro-optic characteristics are strongly dependent on conductivity of the BM on top substrate in a homogeneous liquid crystal cell driven by fringe-electric field.

• Current Optics and Photonics
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• v.6 no.2
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• pp.183-190
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• 2022

Based on the linear electro-optic (EO) effect of lithium niobite (LiNbO₃, LN) crystal, an intense two-dimensional (2D) electric field sensor was analyzed, fabricated and experimentally demonstrated. The linear polarized light beam transmits along the optical axis (z-axis) of the LN crystal, and the polarization direction of the polarized light is 45° to the y-axis. The sensor can detect the intensity of a 2D electric field that is perpendicular to the z-axis. Experimental results demonstrated that the minimum detectable electric field of the sensor is 10.5 kV/m. The maximum detected electric field of the sensor is larger than 178.9 kV/m. The sensitivity of the sensor is 0.444 mV/(kV·m^-1). The variation of the sensitivity is within ±0.16 dB when the sensor is rotated around a z-axis from 0° to 360°. The variation of the sensor output optical power is within ±1.4 dB during temperature change from 19 ℃ to 26 ℃ in a day (from 7:00 AM to 23:00 PM) and temperature change from 0 ℃ to 40 ℃ in a controllable temperature chamber. All theoretical and experimental results revealed that the fabricated sensor provides technology for the direct detection of intense 2D electric fields.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1996.06a
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• pp.522-522
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• 1996

An investigation of the effects of transverse magnetic field and Peltier effect on melt convection and macrosegregation in vertical Bridgman crystal grosth of Te doped InSb was been carried out by means of microstructure observation, Hall measurement, electrical resistivity measurement and X-ray analysis. Before the experiments, Interface stability, convective instability and suppression of convection by magnetic field were calculated theoretically. After doping 1018, 1019 cm-3 Te in InSb, the temperature of Bridgman furnace was set up at $650^{\circ}C$. The samples were grown in I.D. 11mm, 100mm high quartz tube. The velocity of growth was about 2${\mu}{\textrm}{m}$/sec. In order to obtain the suppression of convection by magnetic field in the middle of growth, 2-4KG magnetic field was set on the melt. For searching of the shape of solid-liquid interface and the actual velocity of crystal growth, let 2A current flow from solid to liquid for 1second every 50seconds repeatedly (Peltier effect). The grown InSb was polycrystal, and each grain was very sharp. There was no much difference between the sample with and without magnetic field at a point of view of microstructure. For the sample with Peltier effect, the Peltier marks(striation) were observed regularly as expected. Through these marks, it was found that the solid-liquid interface was flat and the actual growth velocity was about 1-2${\mu}{\textrm}{m}$/sec. On the ground of theoretical calculation, there is thermosolutal convection in the Te doped InSb melt without magnetic field in this growth condition. and if there is more than 1KG magnetic field, the convection is suppressed. Through this experiments, the effective distribution coefficients, koff, were 0.35 in the case of no magnetic field, and 0.45 when the magnetic field is 2KG, 0.7 at 4KG. It was found that the more magnetic field was applied, the more convection was suppressed. But there was some difference between the theoretical calculation and the experiment, the cause of the difference was thought due to the use of some approximated values in theoretical calculation. In addition to these results, the sample with Peltier effect showed unexpected result about the Te distribution in InSb. It looked like no convection and no macrosegregation. It was thought that the unexpected behavior was due to Peltier mark. that is, when the strong current flew the growing sample, the mark was formed by catching Te. As a result of the phenomena, the more Te containing thin layer was made. The layer ruled the Hall measurement. The values of resistivity and mobility of these samples were just a little than those of other reference. It was thought that the reason of this result was that these samples were due to polycrystal, that is, grain boundaries had an influence on this result.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.7
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• pp.695-699
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• 2006

Injection time of liquid crystal (LC) by capillary action in a vertically aligned (VA) nematic LC cell takes longer than that in a homogeneously aligned (HA) LC cell because Miesowicz viscosity in the former is bigger than that in the latter. To reduce liquid crystal injection time in the VA cell, we applied vertical electric field while injecting so that the orientation of LC molecules is changed from vertical alignment to homogeneous alignment. Consequently, the injection speed is improved by 25 % when compared with the cell without an applied field.

• Journal of the Optical Society of Korea
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• v.18 no.6
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• pp.777-782
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• 2014

This paper proposes an RGB to RGBY color conversion algorithm for liquid crystal display (LCD) using RGW pixel structure with two-field (yellow and blue) sequential driving method. The proposed algorithm preserves the hue and saturation of the original color by maintaining the RGB ratio, and it increases the luminance. The performance of the proposed RGBY conversion algorithm is verified using the MATLAB simulation with 24 images of Kodak lossless true color image suite. The simulation results of average color difference CIEDE2000 (${\delta}E^*_{00}$) and scaling factor are 0.99 and 1.89, respectively. These results indicate that the average brightness is increased 1.89 times compared to LCD using conventional RGB pixel structure, without increasing the power consumption and degrading the image quality.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.11 no.4
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• pp.160-165
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• 2001

The effects of various metals on Field Aided Lateral Crystallization (FALC) behaviors of amorphous silicon (a-Si) were investigated. Under an influence of electric field, metals such s Cu, Ni and Co were found to fasten the lateral crystallization toward a metal-free region, exhibiting a typical FALC behavior while the lateral crystallization of a-Si was not obvious for Pd. However, Au, Al and Cr did not induce the lateral crystallization of a-Si in metal-free region. Such phenomenological differences in various metals were studied in terms of dominant diffusing species (DDS) in the reaction between metal and Si. It was judged that the applied electric field enhanced the crystallization velocity by accelerating the diffusion of metal atoms since the occurrence of lateral crystallization would be strongly dependent on the diffusion of metal atoms than that of Si atoms. Therefore, it was concluded that he only metal-dominant diffusing species in the reaction between metal and Si results in the crystallization of a-Si in metal-free region.

• Journal of Information Display
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• v.1 no.1
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• pp.9-13
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• 2000

In liquid crystal displays, the display mode that represents initial liquid crystal alignment and method of applying voltage, mainly determines the image quality of display. Recently we have developed the fringe-field switching (FFS) mode exhibiting high image quality. In this paper, a pixel concept, manufacturing process, materials, and electro-optic characteristics of the FFS mode comparing with conventional in-plane switching mode, and its possible application to reflective type are discussed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.173-173
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• 2010

We proposed viewing angle switchable liquid crystal display(LCD) associated with fringe-field switching (FFS) mode with high aperture ratio characteristic. In the device, single pixel is separated into two regions, named as main pixel for displaying images and sub pixel for viewing angle control. In sub pixel region, add the common electrode on the top substrate and the initial alignment of liquid crystal is Hybrid Alignment Nematic (HAN) state. In conclusion, we suggested that the device has high aperture ratio characteristic because the LC directors are rotated in which viewing angle control region are generated fringe electric field.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08a
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• pp.560-563
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• 2007

The light efficiency of fringe-field switching (FFS) mode was found to be dependent on the magnitude of dielectric anisotropy, indicating that the voltagedependent maximal effective cell retardation value in the on state is a function of magnitude of the dielectric anisotropy of the LC.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.7 no.4
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• pp.548-554
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• 1997

The single crystal of $Mg_{0.16}Zn_{0.84}$Te:Co(Co:0.01 mole%) was grown by vertical Bridgman method. The crystal structure of $Mg_{0.16}Zn$_{0.84}$Te:Co and optical absorption properties of this compound were studied. The grown single crystal has a cubic structure and a lattice constant a=6.1422 $\AA$ were determined by X-ray diffraction. As a result of the optical absorption spectra of $Mg_{0.16}Zn_{0.84}$Te:Co, the intracenter transitions due to $Co^{2+}$ ions were detected for $A-band:^4A_2(^4F){\to}^4T_2(^4F),\; B-band:^4A_2(^4F){\to}^4T_1(^4F), C- band:^4A_2(^4F){\to}^4T_1(^4P)$.The charge transfer transition near the absorption edge was observed in the wavelength range of 550 to 770 nm. According to the crystal field theory, the crystal field parameter(Dq) and the Racah parameter(B) were determined.