• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.10
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• pp.908-913
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• 2003

We have performed computer simulation to obtain electro-optic characteristics of reflective hybrid aligned nematic liquid crystal displays (LCDs) driven by fringe field. The results show that the optimal retardation value (dΔn) of the cell is 0.289 ${\mu}$m, which allows for the cell to have a practical cell gap of larger than 3 ${\mu}$m when manufacturing. A reflectance of the dark state is only 0.114 % for an incident light 550 nm. At this condition, the light efficiency of white state reaches 92.7 %. The display with optimized cell parameters shows that the contrast ratio greater than 5 exists over 600 of polar angle in all directions and lower driving voltage than that of fringe-field driven homogeneously aligned reflective LCD.

• Korean Journal of Optics and Photonics
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• v.10 no.6
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• pp.494-499
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• 1999

We report on the results of holographic transmission grating that can be controlled by the applied AC electric field. We have fabricated a polymer-dispersed liquid crystal material that composed of multifunctional acrylate monomer blended with the liquid crystal mixture E7. To investigate an electro-optic properties of fabricated HPDLC, diffraction efficienties (DE) are measured as a fuction of applied electric field and density of liquid crystal. Maximum DE of about 70% is obtained about 30 wt% of LC concentration at a zero field. We have also shown that optical image was recorded in the tllm, and then the reconstructive image was switchable with the applied electric fields. ields.

• Journal of the Korean Society for Industrial and Applied Mathematics
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• v.16 no.1
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• pp.15-29
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• 2012

In this paper we introduce 6-fold symmetry crystal growth using new phase-field models based on the modified Allen-Cahn equation. The proposed method is a hybrid method which uses both analytic and numerical solutions. We then show this method can be extended to $k$-fold case. The Wulff construction procedure is provided to understand and predict the shape of crystals. We also present a detailed mathematical proof of the validity of the Wulff construction. For computational results, we verify the accuracy and efficiency of the method for snow crystal growth.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.637-637
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• 2013

We develop single-crystal poly(3,4-ethylenedioxythiopene nanowires using liquid-bridge-mediated nanotransfer printing via vapor phase polymerization. This direct printing method can simultaneously enable the synthesis, alignment and patterning of the nanowires from molecular ink solutions. Twoor three-dimensional complex structures of various single-crystal organic nanowires were directly fabricated over a large area using many types of molecular inks. This method is capable of generating several optoelectronic devices. LB-nTM is based on the direct transfer of various materials from a mold to a substrate via a liquid bridge between them. To demonstrate its usefulness, we used LB-nTM to fabricate nanowire field-effect transistors and arrays of 6,13-bis (triisopropyl- silylethynyl) pentacene (TIPS-PEN) nanowire field-effect transistors.

• Journal of the Korean Chemical Society
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• v.20 no.3
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• pp.198-205
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• 1976

The integral Hellmann-Feynman Theorem of Parr is generalized to give a full significance to the off-diagonal form, and certain aspects of it are discussed. By use of the generalized form of the theorem, effects of configuration interaction to the crystal field theory are examined, taking perturbation energies of all order collectively into account. Thus, it is shown that there do not exist, especially when the field is strong, the radial integral which is common to all states characterized by ${\Gamma}$, S and m, and could be parametrized. If, however, one restricts the perturbing excited states only to those angularly undistorted and radially equally distorted, there results simple scaling of the crystal field parameter 10 Dq and Condon-Slater parameter $F^n$ defined within the framework of the classical crystal field theory.

• Journal of the Korean Magnetics Society
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• v.18 no.4
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• pp.159-162
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• 2008

The phenomenon of magnetostriction occurs in magnetic systems when the temperature is changed or the external magnetic field is applied. It is known that the magnetostriction observed in rare-earth elements and compounds is well described by the crystal-field striction and the exchange striction. In this review paper, we discuss the standard theory for the magnetostriction which includes the crystal-field and the exchange interaction.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.4
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• pp.292-297
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• 2003

We fabricated a single crystal silicon thin film transistor for active matrix organic light emitting displays(AMOLEDs) using silicon on insulator wafer (SOI wafer). Poly crystal silicon thin film transistor(poly-Si TFT) Is actively researched and developed nowsdays for a pixel switching devices of AMOLEDs. However, poly-Si TFT has some disadvantages such as high off-state leakage currents and low field-effect mobility due to a trap of grain boundary in active channel. While single crystal silicon TFT has many advantages such as high field effect mobility, low off-state leakage currents, low power consumption because of the low threshold voltage and simultaneous integration of driving ICs on a substrate. In our experiment, we compared the property of poly-Si TFT with that of SOI TFT. Poly-Si TFT exhibited a field effect mobility of 34 $\textrm{cm}^2$/Vs, an off-state leakage current of about l${\times}$10$\^$-9/ A at the gate voltage of 10 V, a subthreshold slope of 0.5 V/dec and on/off ratio of 10$\^$-4/, a threshold voltage of 7.8 V. Otherwise, single crystal silicon TFT on SOI wafer exhibited a field effect mobility of 750 $\textrm{cm}^2$/Vs, an off-state leakage current of about 1${\times}$10$\^$-10/ A at the gate voltage of 10 V, a subthreshold slope of 0.59 V/dec and on/off ratio of 10$\^$7/, a threshold voltage of 6.75 V. So, we observed that the properties of single crystal silicon TFT using SOI wafer are better than those of Poly Si TFT. For the pixel driver in AMOLEDs, the best suitable pixel driver is single crystal silicon TFT using SOI wafer.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.20 no.3
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• pp.988-1004
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• 1996

The characteristics of flow and oxygen concentration are numerically studied in Czochralski 8" silicon crystal growing process considering radiative heat transfer. The analysis of net radiative heat flux on all relevant surfaces shows growing crystal affects the heater power. Furthermore, the variation of the radiative heat flux along the crystal surface in the growing direction is confirmed and should be a cause of thermal stress and defect of the crystal. The calculated distributions of temperature and, heat flux along the wall boundaries including melt/crystal interface, free surface and crucible wall indicate that the frequently used assumption of the thermal boundary conditions of insulated crucible bottom and constant temperature at crucible side wall is not suitable to meet the real physical boundary conditions. It is necessary, therefore, to calculate radiative heat transfer simultaneously with the melt flow in order to simulate the real CZ crystal growth. If only natural convection is considered, the oxygen concentration on the melt/crystal interface decreases and becomes uniform by the application of a cusp magnetic filed. The heater power needed also increases with increasing the magnetic field. For the case of counter rotation of the crystal and crucible, the magnetic field suppresses azimutal flow produced by the crucible rotation, which results in the higher oxygen concentration near the interface.

• Journal of Information Display
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• v.2 no.4
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• pp.19-22
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• 2001

In this paper, we describe the electro-optic effects of photonic crystals made of a synthetic opal filled with a nematic liquid crystal(LC). By applying an external electric field, a shift in the Bragg reflection peak position(stop band) and a field-induced change in its peak reflectivity are observed. These significant surface alignment effects of the opal-LC composite are discussed in a similar manner for Freederick-type transitions of LC within a confined geometry in the presence of external fields.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1997.06a
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• pp.243-246
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• 1997

A new technique for low temperature crystallization of amorphous silicon, called field aided lateral crystallization(FALC) was attempted. To demonstrate the concept of FALC, thin layer of nickel(30${\AA}$) was deposited on top of amorphous silicon film and the electric field was applied during the crystallization. The effects of electric field on the crystallization behavior of amorphous silicon film were investigated.