• Journal of the Korean Institute of Telematics and Electronics
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• v.12 no.6
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• pp.5-8
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• 1975

An Insb magnetic fluxmeter was made of InSb Single Crystal that was grown by Bridgemannmethods and then purified by vapor cone refining method. We investigated some properties of the InSb magneto fluxmeter. It was found that the resistivity and the Hall Coefficient of this single Crystal Were 4.4${\times}10^{-2}{\Omega}$ and $4.5\textrm{cm}^3$/Coul, respectively, at room temperature. The Characteristic Curve of the InSb magnetic fluxmeter between the magnetic field the Hall voltage, with the Current flowing through the element a Parameter, had good lineanty i.e., We obtained a linear Calibration Curve of the flwmeter. The fluxmeter erved the purpose well enough up to 5 k-gaus.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.04b
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• pp.56-59
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• 2004

The stochiometric composition of $AgGaS_2$ polycrystal source materials for the $AgGaS_2/GaAs$ epilayer was prepared from horizontal furnace. From the extrapolation method of X-ray diffraction patterns it was found that the polycrystal $AgGaS_2$ has tetragonal structure of which lattice constant $a_0$ and $c_0$ were 5.756 ${\AA}$ and 10.305 ${\AA}$, respectively. $AgGaS_2/GaAs$ epilayer was deposited on throughly etched GaAs (100) substrate from mixed crystal $AgGaS_2$ by the Hot Wall Epitaxy (HWE) system. The source and substrate temperature were $590^{\circ}C$ and $440^{\circ}C$ respectively. The crystallinity of the grown $AgGaS_2/GaAs$ epilayer was investigated by the DCRC (double crystal X-ray diffraction rocking curve). The optical energy gaps were found to be 2.61 eV for $AgGaS_2/GaAs$ epilayer at room temperature. The temperature dependence of the photocurrent peak energy is well explained by the Varshni equation, then the constants in the Varshni equation are given by ${\alpha}=8.695{\times}10^{-4}eV/K$, and $\beta$=332 K. From the photocurrent spectra by illumination of polarized light of the $AgGaS_2/GaAs$ epilayer, we have found that crystal field splitting $\Delta$ Cr was 0.28 eV at 20 K. From the PL spectra at 20 K, the peaks corresponding to free and bound excitons and a broad emission band due to D-A pairs are identified. The binding energy of the free excitons are determined to be 0.2676 eV and 0.2430 eV and the dissociation energy of the bound excitons to be 0.4695 eV.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.124-125
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• 2007

Single crystal $CdGa_2Se_4$ layers were grown on a thoroughly etched semi-insulating GaAs(100) substrate at $420^{\circ}C$ with the hot wall epitaxy (HWE) system by evaporating the polycrystal source of $CdGa_2Se_4$ at $630^{\circ}C$ prepared from horizontal electric furnace. The photocurrent and the absorption spectra of $CdGa_2Se_4$/SI(Semi-Insulated) GaAs(100) are measured ranging from 293K to 10K. The temperature dependence of the energy band gap of the $CdGa_2Se_4$, obtained from the absorption spectra was well described by the Varshni's relation, $E_g$(T) = 2.6400 eV - $(7.721{\times}10^{-4}\;eV/K)T^2$/(T + 399 K). Using the photocurrent spectra and the Hopfield quasicubic model, the crystal field energy$({\Delta}cr)$ and the spin-orbit splitting energy$({\Delta}so)$ for the valence band of the $CdGa_2Se_4$ have been estimated to be 106.5 meV and 418.9 meV at 10 K, respectively. The three photocurrent peaks observed at 10 K are ascribed to the $A_{1^-},\;B_{1^-},\;and\;C_{11^-}$ exciton peaks.

• Journal of IKEEE
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• v.23 no.3
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• pp.904-909
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• 2019

Using the ion-beam irradiated indium zinc oxide (IZO) films which was cured at $100^{\circ}C$, uniform LC and homogeneous alignment of liquid crystal (LC) molecules was achieved. The IZO film was deposited on the glass substrate at the curing temperature of $100^{\circ}C$ and irradiated by the ion-beam which is an LC alignment method. To verify the LC alignment characteristics, polarizing optical microscope and the crystal rotation method were used. Additionally, it was confirmed that the LC cell with the IZO films had an enough thermal budget for high-quality LC applications. Field emission scanning electron microscope was conducted as a surface analysis to evaluate the effect of the ion-beam irradiation on the IZO films. Through this, it was revealed that the ion-beam irradiation induced rough surface with anisotropic characteristics. Finally, electro-optical (EO) performances of the twisted-nematic cells with the IZO films were collected and it was confirmed that this cell had better EO performances than the conventional rubbed polyimide. Furthermore, the polar anchoring energy was measured and a suitable value for stable LC device operation was achieved.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.67 no.4
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• pp.543-548
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• 2018

Ferroelectric $Bi_4Ti_3O_{12}$ films were deposited on $SrTiO_3(100)$ and Si(100) substrate by using conductive $SrRuO_3$ films as underlayer, and their ferroelectric and electrical properties were investigated depending on crystal structure and orientation. C-axis oriented $Bi_4Ti_3O_{12}$ films were grown on well lattice-matched pseudo-cubic $SrRuO_3$ films deposited on $SrTiO_3(100)$ substrate, while random-oriented polycrystalline $Bi_4Ti_3O_{12}$ films were grown on $SrRuO_3$ films deposited on Si(100) substrate. The random-oriented polycrystalline film showed a good ferroelectric hysteresis property with remanent polarization ($P_r$) of $9.4{\mu}C/cm^2$ and coercive field ($E_c$) of 84.9 kV/cm, while the c-axis oriented film showed $P_r=0.64{\mu}C/cm^2$ and $E_c=47kV/cm$ in polarizaion vs electric field curve. The c-axis oriented $Bi_4Ti_3O_{12}$ film showed a dielectric constant of about 150 and lower thickness dependence in dielectric constant compared to the random-oriented film. Furthermore, the c-axis oriented $Bi_4Ti_3O_{12}$ film showed leakage current lower than that of the polycrystalline film. The difference of ferroelectric properties in two films was explained from the viewpoint of depolarization effect due to orientation of spontaneous polarization and layered crystal structure of bismuth-base ferroelectric oxide.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.13 no.3
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• pp.145-151
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• 2003

Using computational fluid dynamics (CFD) method, we investigated three-dimensional fluid flow field and particle movement with respect to the injected gas flow rate variation in typical cyclone separator system. The results of numerical investigation were deduced by coupling the analysis of fluid flow field with Wavier-stokes equation and the tracking of the particle trajectory with Langrangian approach. It was shown that the increasing of injected gas flow rate resulted in the increasing of pressure loss in the separator. This change of inner pressure had an effect on an aspect of the fluid flow in the separator. Particle movement was determined by fluid flow in the separator and was fully depended on a diameter of particles under the fixed flow rate. Increasing of injected gas flow rate was led to an increasing of the trace of particle, so the particles moved to the lower part of the separator. For this reason, the minimum diameters of the particles were decreased and increased the separation rate under the fixed particle diameter. In conclusion, the changes of injected gas flow rate have an important factor to the fluctuation of the fluid flow field and particle trajectory in the separator.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.10 no.4
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• pp.330-336
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• 2000

Effects of microstructure and indentation stress on fracture behavior of glass-infiltrated alumina composite for dental restorative application were investigated by the Hertzian and Vickers indentation method. Indentation stress-strain curve of glass-infiltrated alumina has showed the quasi-plastic behavior - deviation from linearity at high stress and the classical Hertzian cone crack, which could be confirmed the subsurface damage micrographs using bonded-interface specimen technique. The indentation stress-strain curves for the starting preforms are strongly dependent on porosity and microstructure of the preforms. On the other hand, the curves for the infiltrated composites are relatively insensitive to these factors. The failure of composite is originated at quasi-plastic deformation region. Damage and fracture behavior due to Hertzian stress field is theoretically examined, so that the indentation stress field plays a great role in material degradation. After Hertzian indentation annealing processing changes fracture behavior of alumina composite, so that stress field in material is healed through annealing.

• Journal of the Korean Physical Society
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• v.73 no.12
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• pp.1863-1866
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• 2018

The sodium-iron phosphate maricite-$NaFe_{0.9}Mn_{0.1}PO_4$ was synthesized using the ball mill method. The crystal structure and magnetic properties of the prepared materials were studied using X-ray diffraction (XRD), vibrating sample magnetometer (VSM), and $M{\ddot{o}}ssbauer$ spectroscopy. Structural refinement of maricite-$NaFe_{0.9}Mn_{0.1}PO_4$ was analyzed using the FullProf program. From the XRD patterns, the crystal structure of maricite-$NaFe_{0.9}Mn_{0.1}PO_4$ was found to be orthorhombic with the space group Pmnb. The lattice parameters of maricite-$NaFe_{0.9}Mn_{0.1}PO_4$ are as follows: $a_0=6.866{\AA}$, $b_0=8.988{\AA}$, $c_0=5.047{\AA}$, and $V=311.544{\AA}^3$. Maricite-$NaFePO_4$ has an edge-sharing structure that consists of $FeO_6$ octahedral. Under an applied field of 100 Oe, the temperature dependences of zero-field-cooled (ZFC) and field-cooled (FC) curves were measured from 4.2 to 295 K. $M{\ddot{o}}ssbauer$ spectra were also recorded at various temperatures ranging from 4.2 to 295 K. We thus confirmed that the $N{\acute{e}}el$ temperature of $NaFe_{0.9}Mn_{0.1}PO_4$ ($T_N=14K$) was lower than that of maricite-$NaFePO_4$ ($T_N=15K$).

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.7 no.3
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• pp.359-365
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• 1997

$K_2CoCl_4$, single crystals were grown by the Czochralski method in Ar atmosphere. The thermal hysteresis of the dielectric constant at $T_c$ was investigated. $K_2CoCl_4$ crystal shows ionic hopping mechanism due to $K^+$ ion and the activation energy is nearly 0.62 eV. Thermal expansions along a-, b-, and c-axis of $K_2CoCl_4$, were measured on heating and the thermal expansion coefficients in each phase were calculated. From the result of the optical absorption measurement, we interpreted the absorption peak as transition energy between the splitted energy levels of the Co ion in the crystal field and it showed the possibility of the application to the optical band filter between 800 nm and 1200 nm.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.179-180
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• 2007

Single crystal $AgGaSe_2$ layers were grown on thoroughly etched semi-insulating GaAs(100) substrate at $420^{\circ}C$ with hot wall epitaxy (HWE) system by evaporating $AgGaSe_2$ source at $630^{\circ}C$. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of single crystal $AgGaSe_2$ thin films measured with Hall effect by van der Pauw method are $4.05{\times}\;10^{16}/cm^3$, $139\;cm^2/V{\cdot}s$ at 293 K. respectively. The temperature dependence of the energy band gap of the $AgGaSe_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=1.9501\;eV\;-\;(8.79{\times}10^{-4}\;eV/K)T^2$/(T + 250 K). The crystal field and the spin-orbit splitting energies for the valence band of the $AgGaSe_2$ have been estimated to be 0.3132 eV and 0.3725 eV at 10 K, respectively, by means of the phcitocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the ${\Delta}So$ definitely exists in the $\Gamma_5$ states of the valence band of the $AgGaSe_2$. The three photocurrent peaks observed at 10 K are ascribed to the $A_1$-, $B_1$-, and $C_1$-exciton peaks for n = 1.