• Title/Summary/Keyword: Crystal face

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A Study on Lighting Performance Evaluation of Light-Shelf using Crystal Face (결정면 적용 광선반 채광성능 평가 연구)

  • Lee, Heangwoo;Rogers, Kyle Eric;Seo, Janghoo;Kim, Yongseong
    • Korean Journal of Air-Conditioning and Refrigeration Engineering
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    • v.27 no.8
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    • pp.395-401
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    • 2015
  • Recently, many research studies have been carried out on the efficiency of light-shelf daylighting systems, especially comparing performance improvements and the limitations of reflective surfaces and their lighting performance. In this study, a crystal face reflective surface is proposed. The objective of the study is to evaluate the lighting performance of a crystal face light-shelf through a performance study. The performance study was carried out in a full scale test-bed in order to calculate the light distribution and energy consumption utilizing the standard indoor illumination as an index. The conclusions of the performance study are as follows. 1) The optimal angle of incidence for daylighting for both the operable flat type light-shelf and the crystal face light-shelf are taken in the natural environment on the dates of the winter and summer solstices, as well as the autumn and spring equinoxes. 2) The application and installation of the crystal face light-shelf can produce a 29.9%~34.3% increase of light distribution within the indoor space. However, the increase of light distribution can also lead to a decrease in the uniformity ratio, a design challenge that should be considered when applying a crystal face light-shelf. 3) It is possible to achieve a 7.98%~13.3% greater reduction in energy consumption when applying a crystal face light-shelf than when applying a flat type light-shelf. The increase in the number of crystal faces should concur with the analysis of the energy reduction. A limitation of the study is that only one predetermined pattern was performance tested for a crystal face light-shelf. In order to carry out further research on crystal face light-shelves, additional performance studies are needed based on alternative patterns and designs.

The Effect of Seed Orientation on Growth Form and Surface Morphology in Growing NYAB Crystal (NYAB 결정육성시 종자정의 방향이 성장외형 및 표면형상에 미치는 영향)

  • 정선태;최덕용
    • Korean Journal of Crystallography
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    • v.5 no.2
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    • pp.93-99
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    • 1994
  • Growth form and surface morphology of NYAB single crystal grown by TSSG technique using a K2O/3MoOS/0.5B203 flux was investigated. In the crystal grown from <100> or <120> seed, prismatic and (101) faces were well developed with different size each other. (001) face was also developed in the crystal grown from <001> seed. While growth hillocks were observed on the prismatic face of the crystal grown from <100> seed, surface striations parallel to neighbor (101) faces were formed on that face of the crystal grown from <001> seed. The (101) faces were grown by two dimensional nucleation growth. (001) face which was developed at slow growth velocity of [001] direction was grown by screw dislocation Anisotropy of growth velocity as to seed orientation affected on crystal morphology and surface morphology.

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Wet chemical etching of molten KOH/NaOH eutectic alloy to evaluate AlN single crystal (AlN 단결정의 품질평가를 위한 molten KOH/NaOH eutectic alloy의 화학적 습식에칭)

  • Park, Cheol Woo;Park, Jae Hwa;Hong, Yoon Pyo;Oh, Dong Keun;Choi, Bong Geun;Lee, Seong Kuk;Shim, Kwang Bo
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.24 no.6
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    • pp.237-241
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    • 2014
  • We investigated the optimal etching conditions and properties of the surface change due to molten KOH/NaOH chemical wet etching using an AlN wafer which has been put to practical use in the present study. Results were observed using a scanning electron microscope after 5 minutes etching at $350^{\circ}C$, was found to have a surface form of the respective other Al-face, the N-face. In particular, etch-pit in the form of a hexagon, which is observed in the Al-face appeared, It was calculated at $2{\times}10^6/cm^2{\sim}10^{10}/cm^2$ dislocation density. In the case of N-face, lattice defects in the form of the hexagonal pyramids is formed. It was discovered that in order to observe the orientation of the wafer, which corresponds to the C-axis direction of the resulting hexagonal AlN which was analyzed using XRD (0002) and is a state of being oriented in the (0004) plane. The Radius of curvature of AlN wafer was 1.6~17 m measured by DC-XRD rocking curve position.

Crystal Habits of Corundum Single Crystals Grown in Cryolite Flux (빙정식 융제로 성장한 Corundum 단결정의 결정형)

  • 장진욱;이태근;정수진
    • Journal of the Korean Ceramic Society
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    • v.29 no.6
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    • pp.463-470
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    • 1992
  • Corundum single crystals were grown in cryolite flux with the composition of Na3AlF6:Al2O3=80:20 wt%. This mixture was melted at 115$0^{\circ}C$, followed by slow cooling at a rate of 2$^{\circ}C$/hr to 96$0^{\circ}C$. And by adding of La2O3 to the flux, the change of crystal forms were observed. Crystal forms of corundum grown in cryolite flux had the habits of hexagonal plate which consist of well developed {0001} face and small {101} face. As La2O3 was added and its content was increased, {223} and {110} faces were developed, and crystal habits of equidimensional forms changed into hexagonal prism form. In a charge of 8 mole% B2O3, Al2O3:La2O3=15:1, transparent corundum single crystals of equent form were grown. As the content of B2O3 was increased, twineed crystals which have twin law of 2-fold parallel to [0001], and composition plane of (110) were grown.

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A Computer Programming for the Analysis of Crystal Structures (결정 구조들의 해석을 위한 컴퓨터 프로그래밍)

  • Kim, Jin-Hui
    • The Transactions of the Korea Information Processing Society
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    • v.7 no.3
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    • pp.872-878
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    • 2000
  • In this paper a computer programming for the expression of nearest neighbor atoms in face-centered cubic (FCC) and body-centered cubic (BCC) crystals was suggested as one of the approaches to understand each of the crystal structure. By using this computer programming the distance values between a reference atom and the nearest neighbor atoms, and the numbers of the nearest neighbor atoms were calculated ane compared for the FCC and BCC crystals. In this algorithm, the positions of the atoms in a crystal were defined as two categories: the corner atoms and face- or body-centered atoms, and considered respectively. For the same order of nearest neighbor atoms except the second order ones the distance values form the reference atom were smaller in the FCC crystals than those in the BCC. Also, the numbers of he first and third nearest neighbor atoms n the FCC crystals were larger than those in the BCC. This difference was explained by the comparison of each atomic packing ratio of the FCC and BCC crystals. The algorithm used in this programming can also be expanded to the analysis of other crystal structures.

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Investigation of defects and surface polarity in AlN and GaN using wet chemical etching technique (화학적 습식 에칭을 통한 AlN와 GaN의 결함 및 표면 특성 분석)

  • Hong, Yoon Pyo;Park, Jae Hwa;Park, Cheol Woo;Kim, Hyun Mi;Oh, Dong Keun;Choi, Bong Geun;Lee, Seong Kuk;Shim, Kwang Bo
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.24 no.5
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    • pp.196-201
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    • 2014
  • We investigated defects and surface polarity in AlN and GaN by using wet chemical etching. Therefore, the effectiveness and reliability of estimating the single crystals by defect selective etching in NaOH/KOH eutectic alloy have been successfully demonstrated. High-quality AlN and GaN single crystals were etched in molten NaOH/KOH eutectic alloy. The etching characteristics and surface morphologies were carried out by scanning electron microscope (SEM) and atomic force microscope (AFM). The etch rates of AlN and GaN surface were calculated by etching depth as a function of etching time. As a result, two-types of etch pits with different sizes were revealed on AlN and GaN surface, respectively. Etching produced hexagonal pits on the metal-face (Al, Ga) (0001) plane, while hexagonal hillocks formed on the N-face. On etching rate calibration, it was found that N-face had approximately 109 and 15 times higher etch rate than the metal-face of AlN and GaN, respectively. The size of etch pits increased with an increase of the etching time and they tend to merge together with a neighbouring etch pits. Also, the chemical mechanism of each etching process was discussed. It was found that hydroxide ion ($OH^-$) and the dangling bond of nitrogen play an important role in the selective etching of the metal-face and N-face.

A study on structural properties of copper nanowires (구리 나노와이어의 구조적 특성에 관한 연구)

  • 강정원;권오근;황호정
    • Journal of the Korean Vacuum Society
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    • v.11 no.1
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    • pp.59-67
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    • 2002
  • The structures and properties of Cu nanowires have been investigated using molecular dynamics simulations. Cylindrical multi-shell Cu nanowires maintain their structures at room temperature and their structural properties are different from the structural properties of nanowires with face-centered-cubic structure. The results from nanopillar and tensile testing of cylindrical multi-shell Cu nanowire showed structures related to pentagonal needle-like crystal structures. Since the subunits of pentagonal nanowire with needle-like crystal are face-centered-cubic structure, pentagonal multi-shell nanowires are stable one-dimensional structures in nanostructured materials.

Polarity of freestanding GaN grown by hydride vapor phase epitaxy

  • Lee, Kyoyeol;Auh, Keun-Ho
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.11 no.3
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    • pp.106-111
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    • 2001
  • The freestanding GaN substrates were grown by hydride vapor phase epitaxy (HVPE) on (0001) sapphire substrate and prepared by using laser induced lift-off. After a mechanical polishing on both Ga and N-surfaces of GaN films with 100$\mu\textrm{m}$ thick, their polarities have been investigated by using chemical etching in phosphoric acid solution, 3 dimensional surface profiler and Auger electron spectroscopy (AES). The composition of the GaN film measured by AES indicted that Ga and N terminated surfaces have the different N/Ga peak ratio of 0.74 and 0.97, respectively. Ga-face and N-face of GaN revealed quite different chemical properties: the polar surfaces corresponding to (0001) plane are resistant to a phosphoric acid etching whereas N-polar surfaces corresponding to(0001) are chemically active.

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Analysis of Stress-Strain Relationship of Nano Structures According to the Size and Crystal Orientation by Using the Molecular Dynamics Simulation (분자동역학을 이용한 나노구조물의 크기와 결정방향에 따른 응력-변형률 관계 해석)

  • Kang, Yong-Soo;Kim, Hyun-Gyu
    • Transactions of the Korean Society of Mechanical Engineers A
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    • v.32 no.12
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    • pp.1047-1054
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    • 2008
  • In this paper, the molecular dynamics (MD) simulations are performed with single-crystal copper blocks under simple shear and simple tension to investigate the effect of size and crystal orientation. There are many variances to give influences such as deformation path, temperature, specimen size and crystal orientation. Among them, the crystal orientation has a primary influence on the volume averaged stress. The numerical results show that the volume averaged shear stress decreases as the specimen size increases and as the crystal orientation changes from single to octal. Furthermore, the Schmid factor and yield stress for crystal orientation are evaluated by using the MD simulation on the standard triangle of stereographic projection.

Selective Dissolution of ZnO Crystal by a Two-step Thermal Aging in Aqueous Solution (수용액 합성법의 2단계 성장온도 변화를 통한 ZnO 결정의 선택적 용해 현상)

  • Kim, Jeong-Seog;Chae, Ki-Woong
    • Journal of the Korean Ceramic Society
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    • v.48 no.4
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    • pp.263-268
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    • 2011
  • ZnO hexagonal rods grown in aqueous solution can be changed into a tubular shape by two-step aging in the course of the growing process. In the first step, hexagonal ZnO rods is grown by aging at $90^{\circ}C$ under a highly supersaturated aqueous solution giving rise to a fast precipitation rate. Meanwhile, during the second step aging at $60^{\circ}C$ in the same aqueous solution, the hexagonal polar face (001) having higher surface energy than (010) side planes dissolves to minimize surface energy. Hence the flat (001) face changes to a craterlike face and the hexagonal rod length of ZnO decreases at an initial-stage of this step aging. The formation of the (101) wedge-type faces is ascribed to the resultant of competitive reactions between the dissolution of polar face minimizing the surface energy which is a dominant reaction at the initial stage and the precipitation reaction dissipating supersaturation. At a later stage of the second-step the reaction rates of these two processes in the aqueous solution become similar and the overall reaction is terminated.