• 설비공학논문집
• /
• 제27권8호
• /
• pp.395-401
• /
• 2015

Recently, many research studies have been carried out on the efficiency of light-shelf daylighting systems, especially comparing performance improvements and the limitations of reflective surfaces and their lighting performance. In this study, a crystal face reflective surface is proposed. The objective of the study is to evaluate the lighting performance of a crystal face light-shelf through a performance study. The performance study was carried out in a full scale test-bed in order to calculate the light distribution and energy consumption utilizing the standard indoor illumination as an index. The conclusions of the performance study are as follows. 1) The optimal angle of incidence for daylighting for both the operable flat type light-shelf and the crystal face light-shelf are taken in the natural environment on the dates of the winter and summer solstices, as well as the autumn and spring equinoxes. 2) The application and installation of the crystal face light-shelf can produce a 29.9%~34.3% increase of light distribution within the indoor space. However, the increase of light distribution can also lead to a decrease in the uniformity ratio, a design challenge that should be considered when applying a crystal face light-shelf. 3) It is possible to achieve a 7.98%~13.3% greater reduction in energy consumption when applying a crystal face light-shelf than when applying a flat type light-shelf. The increase in the number of crystal faces should concur with the analysis of the energy reduction. A limitation of the study is that only one predetermined pattern was performance tested for a crystal face light-shelf. In order to carry out further research on crystal face light-shelves, additional performance studies are needed based on alternative patterns and designs.

• 한국결정학회지
• /
• 제5권2호
• /
• pp.93-99
• /
• 1994

K2O/3MOOS/0.SBB03 융제를 사용하여 TSSG 법으로 육성한 Md:Yal3(BO3)4 (NYAB) 단결정의 결정외형 및 표면형상을 연구하였다. <100>과 <120> 종자정을 사용한 경우는 서로 다른 크기의 프리즘 면들과 (101) 면들이 발달하였고 <001> 종자정을 사용하였을 때는 (001) 면이 함께 발달하였다. 종자정의 방향이 <100>또는 <120> 일때 프리즘 면 위에 성장구룽이 많이 형성되었으나, <001> 일때는 이웃하는 (101) 면에 평행한 줄무늬가 형성 되었다. (101) 면은 이차원 핵생성에 의한 성장이 지배적이고, <001> 종지정을 사용할 때 발달하는 (001) 면은 나선형 전위에 의한 성장이 지배적이었다. 종자정의 방향은 성장외형을 변화시키고 성장외형과 결정의 질을 결정하는 중요한 성장변수로 작용하였다.

• 한국결정성장학회지
• /
• 제24권6호
• /
• pp.237-241
• /
• 2014

본 연구에서는 상용화되는 AlN 웨이퍼(wafer)를 이용하여 molten KOH/NaOH 화학적 습식 에칭(Wet Chemical Etching)에 따른 표면변화 특성 및 최적의 에칭 조건을 조사하였다. AlN 웨이퍼를 $350^{\circ}C$에서 5분간 에칭 시 Al-face, N-face는 서로 다른 관찰되었다. 특히, Al-face는 에치핏의 형상을 파악하여 결함특성을 관찰하였고, 이로부터 결함 밀도를 계산하여 $2{\times}10^6/cm^2{\sim}10^{10}/cm^2$의 결과를 얻었다. N-face의 경우 육각 뿔(hexagonal pyramids) 형태의 격자결함이 형성되었다. 또한 AlN 웨이퍼의 성장 시 배향을 관찰하기 위해 XRD(X-Ray Diffraction, Rigaku, JAPAN)를 이용하여 분석한 결과 육방정 AlN의 C축 방향에 해당되는 (0002) 및 (0004) 면으로 배향된 상태임을 알 수 있었고, DC-XRD(Double Crystal X-ray Diffraction, bruker, Germany)를 이용하여 rocking curve의 위치에 따라 곡률 반경을 측정했을 때 1.6~17 m의 곡률을 가지고 있는 것으로 나타났다.

• 한국세라믹학회지
• /
• 제29권6호
• /
• pp.463-470
• /
• 1992

Corundum single crystals were grown in cryolite flux with the composition of Na3AlF6:Al2O3=80:20 wt%. This mixture was melted at 115$0^{\circ}C$, followed by slow cooling at a rate of 2$^{\circ}C$/hr to 96$0^{\circ}C$. And by adding of La2O3 to the flux, the change of crystal forms were observed. Crystal forms of corundum grown in cryolite flux had the habits of hexagonal plate which consist of well developed {0001} face and small {101} face. As La2O3 was added and its content was increased, {223} and {110} faces were developed, and crystal habits of equidimensional forms changed into hexagonal prism form. In a charge of 8 mole% B2O3, Al2O3:La2O3=15:1, transparent corundum single crystals of equent form were grown. As the content of B2O3 was increased, twineed crystals which have twin law of 2-fold parallel to [0001], and composition plane of (110) were grown.

• 한국정보처리학회논문지
• /
• 제7권3호
• /
• pp.872-878
• /
• 2000

In this paper a computer programming for the expression of nearest neighbor atoms in face-centered cubic (FCC) and body-centered cubic (BCC) crystals was suggested as one of the approaches to understand each of the crystal structure. By using this computer programming the distance values between a reference atom and the nearest neighbor atoms, and the numbers of the nearest neighbor atoms were calculated ane compared for the FCC and BCC crystals. In this algorithm, the positions of the atoms in a crystal were defined as two categories: the corner atoms and face- or body-centered atoms, and considered respectively. For the same order of nearest neighbor atoms except the second order ones the distance values form the reference atom were smaller in the FCC crystals than those in the BCC. Also, the numbers of he first and third nearest neighbor atoms n the FCC crystals were larger than those in the BCC. This difference was explained by the comparison of each atomic packing ratio of the FCC and BCC crystals. The algorithm used in this programming can also be expanded to the analysis of other crystal structures.

• 한국결정성장학회지
• /
• 제24권5호
• /
• pp.196-201
• /
• 2014

화학적 습식 에칭을 통해 AlN와 GaN의 결함 및 표면 특성을 분석했다. 화학적 습식 에칭은 단결정의 결함을 선택적으로 에칭하기 때문에 결정의 품질을 평가하는 좋은 방법으로 주목 받고 있다. AlN와 GaN의 단결정은 NaOH/KOH 용융액을 이용하여 에칭을 했으며, 에칭 후 표면 특성을 알아보기 위해 주사전자현미경(SEM)과 원자힘 현미경(AFM)을 촬영했다. 에치 핏의 깊이를 측정하여 표면에 따른 에칭 속도를 계산했다. 그 결과 AlN와 GaN 표면에는 두 개의 다른 형태에 에치 핏이 형성 되었다. (0001)면의 metal-face(Al, Ga)는 육각 추를 뒤집어 놓은 형태를 갖는 반면 N-face는 육각형 형태의 소구 모양(hillock structure)을 하고 있었다. 에칭 속도는 N-face가 metal-face(Al, Ga)보다 각 각 약 109배(AlN)와 5배 정도 빨랐다. 에칭이 진행되는 동안 에치 핏은 일정한 크기로 증가하다 서로 이웃한 에치 핏들과 합쳐지는 것으로 보여졌다. 또한 AlN와 GaN의 에칭 공정을 화학적 메커니즘을 통해 알아 보았는데, 수산화 이온($OH^-$)과 질소의 dangling bond에 영향을 받아 metal-face(Al, Ga)와 N-face가 선택적으로 에칭되는 것으로 추론되었다.

• 한국진공학회지
• /
• 제11권1호
• /
• pp.59-67
• /
• 2002

본 연구에서는 분자동력학 시뮬레이션을 이용하여 구리 나노와이어의 구조적 특성에 관하여 연구하였다. 매우 가는 구리 나노와이어의 구조는 면심입방격자 구조와는 다른 원통형 다중 껍질 구조를 가지며 상온에서 안정한 구조를 유지하였다. 원통형 다중껍질 나노기둥 및 나노와이어 확장 변형에 따른 장력의 변화에 관한 연구에서 오각형 NLC(needle-like crystal) 구조가 관찰되었다. 오각형 NLC 나노와이어 구조의 특성은 기본구성단위가 면심입방격자 구조이므로 안정된 구조라는 것을 연구하였다.

• 한국결정성장학회지
• /
• 제11권3호
• /
• pp.106-111
• /
• 2001

The freestanding GaN substrates were grown by hydride vapor phase epitaxy (HVPE) on (0001) sapphire substrate and prepared by using laser induced lift-off. After a mechanical polishing on both Ga and N-surfaces of GaN films with 100$\mu\textrm{m}$ thick, their polarities have been investigated by using chemical etching in phosphoric acid solution, 3 dimensional surface profiler and Auger electron spectroscopy (AES). The composition of the GaN film measured by AES indicted that Ga and N terminated surfaces have the different N/Ga peak ratio of 0.74 and 0.97, respectively. Ga-face and N-face of GaN revealed quite different chemical properties: the polar surfaces corresponding to (0001) plane are resistant to a phosphoric acid etching whereas N-polar surfaces corresponding to(0001) are chemically active.

• 대한기계학회논문집A
• /
• 제32권12호
• /
• pp.1047-1054
• /
• 2008

In this paper, the molecular dynamics (MD) simulations are performed with single-crystal copper blocks under simple shear and simple tension to investigate the effect of size and crystal orientation. There are many variances to give influences such as deformation path, temperature, specimen size and crystal orientation. Among them, the crystal orientation has a primary influence on the volume averaged stress. The numerical results show that the volume averaged shear stress decreases as the specimen size increases and as the crystal orientation changes from single to octal. Furthermore, the Schmid factor and yield stress for crystal orientation are evaluated by using the MD simulation on the standard triangle of stereographic projection.

• 한국세라믹학회지
• /
• 제48권4호
• /
• pp.263-268
• /
• 2011

ZnO hexagonal rods grown in aqueous solution can be changed into a tubular shape by two-step aging in the course of the growing process. In the first step, hexagonal ZnO rods is grown by aging at $90^{\circ}C$ under a highly supersaturated aqueous solution giving rise to a fast precipitation rate. Meanwhile, during the second step aging at $60^{\circ}C$ in the same aqueous solution, the hexagonal polar face (001) having higher surface energy than (010) side planes dissolves to minimize surface energy. Hence the flat (001) face changes to a craterlike face and the hexagonal rod length of ZnO decreases at an initial-stage of this step aging. The formation of the (101) wedge-type faces is ascribed to the resultant of competitive reactions between the dissolution of polar face minimizing the surface energy which is a dominant reaction at the initial stage and the precipitation reaction dissipating supersaturation. At a later stage of the second-step the reaction rates of these two processes in the aqueous solution become similar and the overall reaction is terminated.