• Proceedings of the Korean Society for Emotion and Sensibility Conference
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• 2001.11a
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• pp.87-90
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• 2001

본 연구에서는 감성 평가 시스템에 가장 적합한 파라미터를 찾기 위하여 3가지 뇌파 파라미터를 이용하여 감정 분류 실험을 하였다. 뇌파 파라미터는 선형예측기계수(linear predictor coefficients)와 FFT 스펙트럼 및 AR 스펙트럼의 밴드별 상호상관계수(cross-correlation coefficients)를 이용하였으며, 감정은 relaxation, joy, sadness, irritation으로 설정하였다. 뇌파 데이터는 대학의 연극동아리 학생 4명을 대상으로 수집하였으며, 전극 위치는 Fp1, Fp2, F3, F4, T3, T4, P3, P4, O1, O2를 사용하였다. 수집된 뇌파 데이터는 전처리를 거친 후 특징 파라미터를 추출하고 패턴 분류기로 사용된 신경회로망(neural network)에 입력하여 감정 분류를 하였다. 감정 분류실험 결과 선형예측기계수를 이용하는 것이 다른 2가지 보다 좋은 성능을 나타내었다.

• Journal of the Korea institute for structural maintenance and inspection
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• v.7 no.1
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• pp.131-138
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• 2003

This paper presents an analytical prediction of the prestress losses of prestressed concrete bridges. In this study a numerical procedure and computer program is developed to analyze the behavior of prestressed concrete bridges considering the time-dependent properties of material. It accounts for the aging, creep and shrinkage of concrete and the stress relaxation of prestressed steel. The structural model uses two dimensional plane frame elements with three nodal degree of freedom and is analyzed based on the finite element method. Member cross section can consist of concrete, reinforcement and prestressing steel. Two different set of equations for the prediction of time-dependent material properties of concrete are presented, which are ACI, CEB-FIP. The proposed numerical method for the prestress losses of prestressed concrete bridges is verified by comparison with reliable experimental results.

• Bulletin of the Korean Chemical Society
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• v.18 no.4
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• pp.415-424
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• 1997

Conformational flexibilities of the GlcNAc(β1,3)Gal(β)OMe are investigated through NMR spectroscopy and molecular modeling. Adiabatic energy map generated with a dielectric constant of 50 contains three local minima. All of the molecular dynamics simulations on three local minimum energy structures show fluctuations between two low energy structures, N2 at φ=80° and ψ=60° and N3 at φ=60° and ψ=-40°. We have presented adequate evidences to state that GlcNAc(β1,3)Gal(β)OMe exists in two conformationally discrete forms. Two state model of N2 and N3 conformers with a population ratio of 40:60 is used to calculate the effective cross relaxation rate and reproduces the experimental NOEs very well. Molecular dynamics simulation in conjunction with two state model proves successfully the dynamic equilibrium existed in GlcNAc(β1,3)Gal(β)OMe and can be considered as a powerful method to analyze the motional properties in the structure of carbohydrate. This observation also cautions against the indiscriminate use of a rigid model to analyze NMR data.

• Analytical Science and Technology
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• v.6 no.3
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• pp.319-328
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• 1993

Energy transfer process between $Tb^{3+}$ and $Ce^{3+}$ has been studied in LaOCl host. The energy absorbed by $Ce^{3+}$ transfers to $Tb^{3+}$ which has levels emitting strong fluorescence. The probability of energy transfer depends strongly on the concentration or the distance of activator ions. While the energy transferred on $Tb^{3+}$ emits from $^5D_3$ level at low concentration of $Ce^{3+}$, the energy goes back to $Ce^{3+}$(Back Transfer) and then emits from low levels of $Ce^{3+}$ and $Tb^{3+}$ at the high concentration. The Back Transfer process has been identified by the experiment with varying the concentration of the activator, $Ce^{3+}$. The relaxation is more effective if $Ce^{3+}$ intermediates than if not.

• Korean Journal of Materials Research
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• v.17 no.11
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• pp.574-579
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• 2007

Amorphous $BaTi_4O_9$ ($BT_4$) film was deposited on Pt/Si substrate by RF magnetron sputter and their dielectric properties and electrical properties are investigated. A cross sectional SEM image and AFM image of the surface of the amorphous $BT_4$ film deposited at room temperature showed the film was grown well on the substrate. The amorphous $BT_4$ film had a large dielectric constant of 32, which is similar to that of the crystalline $BT_4$ film. The leakage current density of the $BT_4$ film was low and a Poole-Frenkel emission was suggested as the leakage current mechanism. A positive quadratic voltage coefficient of capacitance (VCC) was obtained for the $BT_4$ film with a thickness of <70 nm and it could be due to the free carrier relaxation. However, a negative quadratic VCC was obtained for the films with a thickness ${\geq}96nm$, possibly due to the dipolar relaxation. The 55 nm-thick $BT_4$ film had a high capacitance density of $5.1fF/{\mu}m^2$ with a low leakage current density of $11.6nA/cm^2$ at 2 V. Its quadratic and linear VCCs were $244ppm/V^2$ and -52 ppm/V, respectively, with a low temperature coefficient of capacitance of $961ppm/^{\circ}C$ at 100 kHz. These results confirmed the potential suitability of the amorphous $BT_4$ film for use as a high performance metal-insulator-metal (MIM) capacitor.

• Journal of Korea Water Resources Association
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• v.49 no.2
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• pp.121-132
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• 2016

The DAMBRK is applied to Janghyeon and Dongmak reservoirs in Namdaecheon basin, where two reservoirs were failed due to Typhoon Rusa in 2002. Relaxation scheme is added to DAMBRK to consider the tributary cross-section because two reservoirs are in tributary valleys. In addition, this study suggests the method to utilize the reservoir breach formation time of ASDSO (2005) and empirical formulas for peak break outflow from dam to reduce the uncertainty of reservoir breach formulation time. The single break of Janghyeon reservoir and consecutive break of Janghyeon and Dongmak reservoirs with the suggested method are considered. While the breach discharge from reservoirs rushes down, the discharge and water surface elevation along the river are predicted, and the predictions show the attenuation phenomena of reservoir break floodwave. The applicability of the model is validated by comparing the predicted height with field surveyed data, and showing good agreements between predictions and measurements.

• Journal of Oriental Neuropsychiatry
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• v.33 no.4
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• pp.473-484
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• 2022

Objectives: To report a case of a patient with a mild depressive episode accompanied by physical symptoms such as hyposmia visiting a Korean medicine hospital who was treated with oriental psychotherapy in parallel with existentialism-based psychotherapy showing improvement. Methods: For this patient, Korean medicine Psychotherapy was mainly used for treatment. In parallel, existential Psychotherapy, acupuncture treatment, and self-relaxation training were implemented. For estimating this treatment, changes in results of Beck Depression Index (BDI), Beck Anxiety Index (BAI), Numeric Rating Scale (NRS), Korean Version of Sniffin' Sticks Test (KVSS), Butanol Threshold Test (BTT), Cross-Cultural Smell Identification Test (CC-SIT), and somatic symptoms that the patient subjectively expressed were determined. Results: After the comprehensive treatment, it was confirmed that changes in BDI, BAI, KVSS, BTT, CC-SIT, NRS, and subjective somatic symptoms expressed by the patient all showed improvements. Conclusions: We propose that a comprehensive treatment using Korean medicines Psychotherapy in parallel with existential psychotherapy can be used for patients who complain of physical symptoms accompanied by depression and hyposmia.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.3 no.1
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• pp.18-25
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• 1978

The 1/f noise spectrum of short-circuited output drain current due to the Shockley-Read-Hal] recombination centers with a single lifetime in homogeneous nondegenerate MOS-field effcte transtors with n-type channel is calculated under the assumptions that the quasi-Fermi level for the carriers in each energy band can not be defined if we include the fluctuation for time varying quantities. and so 1/f noise is a majority carrier effect. Under these assumptions the derived 1/f noise in this paper show some essential features of the 1/f noise in MOS-field effect transistors. That is, it has no lowfrequency plateau and is proportionnal to the channel cross area A and to the driain bias voltage Vd and inversely proportional to the channel length L3 in MOS field effect transistors. This model can explain the discrepancy between the transition frequency of the noise spectrum from 1/f- response to 1/f2 and the frequency corresponding to the relaxation time related to the surface centers in p-n junction diodes. In this paper the results show that the functional form of noise spectrum is greatly influenced by the functional forms of the electron capture probability cn (E) and the relaxation time r (E) for scattering and the case of lattice scattering show to be responsible for the 4 noise in MOS fold effect transistors. So we canconclude that the source of 1/f noise is due to lattice scattering.

• Korean Journal of Optics and Photonics
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• v.9 no.4
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• pp.221-226
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• 1998

Ternary heavy metal oxide glasses in the $PbO-Bi_2O_3-Ga_2O_3$ system doped with $Er_2O_3$ were prepared and their spectroscopic properties, such as radiative transition probability, calculated and measured radiative lifetimes and cross-sections of 1.5 $\mu\textrm{m}$ and 2.7 $\mu\textrm{m}$ emissions were analyzed. Enhanced quantum efficiencies of some electronic transitions were evident mainly because of the low vibrational phonon energy ($~500cm^{-1}$) inherent in the host glasses. This seems to be the main reason for obtaining the 2.7 $\mu\textrm{m}$ luminescence which is normally quenched in the conventional oxide glasses. In addition, green and red fluorescence emissions were observed through the frequency upconversion processes of the 798 nm excitation. Non-radiative transition due to the multiphonon relaxation is a dominant lifetime-shortening mechanism in the 4f-4f transitions in $Er^{3+}$ ion except for the $^4S_{3/2}{\rightarrow}^4I_{15/2}$ transition where a non-radiative transfer to band-gap excitation of the host glasses is dominant. Melting of glasses under an inert gas atmosphere and (or) addition of the typical glass-network former into glasses is necessary in order to enhance the quantum efficiency of the transition.

• Bulletin of the Korean Chemical Society
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• v.33 no.5
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• pp.1491-1504
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• 2012

InP quantum dot (QD)-organosilicon nanocomposites were synthesized and their photoluminescence quenching was mainly investigated because of their applicability to white LEDs (light emitting diodes). The as-synthesized InP QDs are capped with myristic acid (MA), which are incompatible with typical silicone encapsulants. We have introduced a new ligand, 3-aminopropyldimethylsilane (APDMS), which enables embedding the QDs into vinyl-functionalized silicones through direct chemical bonding. The exchange of ligand from MA to APDMS does not significantly affect the UV absorbance of the InP QDs, but quenches the PL to about 10% of its original value with the relative increase in surface related emission intensities, which is explained by stronger coordination of the APDMS ligands to the surface indium atoms. InP QD-organosilicon nanocomposites were synthesized by connecting the QDs using a short cross-linker such as 1,4-divinyltetramethylsilylethane (DVMSE) by the hydrosilylation reaction. The formation and changes in the optical properties of the InP QD-organosilicon nanocomposite were monitored by ultraviolet visible (UV-vis) absorbance and steady state photoluminescence (PL) spectroscopies. As the hydrosilylation reaction proceeds, the QD-organosilicon nanocomposite is formed and grows in size, causing an increase in the UV-vis absorbance due to the scattering effect. At the same time, the PL spectrum is red-shifted and, very interestingly, the PL is quenched gradually. Three PL quenching mechanisms are regarded as strong candidates for the PL quenching of the QD nanocomposites, namely the scattering effect, F$\ddot{o}$rster resonance energy transfer (FRET) and cross-linker tension preventing the QD's surface relaxation.