• 대한전기학회논문지:전기기기및에너지변환시스템부문B
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• 제53권12호
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• pp.739-750
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• 2004

In case while M(modulation index) is more than 0.7, the spectrum of motor voltage and current of a conventional two-phase SRP-PWM scheme are not reduced considerably. To solve the problems of a conventional two-phase SRP-PWM, this paper proposes a two-phase SRP-PWM(DZSRP-PWM) with double zero vector mode which zero vector is selected as V(111) in case of M >0.7, and zero vector is selected as V(000) if M < 0.7. For the validity of the proposed method, the PSIM simulations and experiments were achieved. And the simulation and experiment results show that the voltage and current harmonics all over the modulation index are spread to a wide band area.

• Journal of Power Electronics
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• 제19권4호
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• pp.968-979
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• 2019

Recently, there has been increased interest in the study of multiphase machines due to their higher fault-tolerant capability when compared to their conventional three-phase counterparts. For six-phase machines, stator windings configured with a single isolated neutral (1N) provide significantly more post-fault torque/power than two isolated neutrals (2N). Hence, this configuration is preferred in applications where post-fault performance is critical. It is well known that min-max injection has been commonly used for three-phase and multiphase machines in healthy condition to maximize the modulation limit. However, there is a lack of discussion on min-max injection for post-fault condition. Furthermore, the effects in terms of the common-mode voltage (CMV) in modulating signals has not been discussed. This paper investigates the effect of min-max injection in post fault-tolerant control on the voltage and speed limit of a symmetrical six-phase induction machine with single isolated neutral. It is shown that the min-max injection can minimize the amplitude of reference voltage, which maximizes the modulation index and post-fault speed of the machine. This in turn results in a higher post-fault power.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 춘계학술회의 초록집
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• pp.16-16
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• 2010

GaN-based light-emitting diodes (LEDs) are attracting great interest as candidates for next-generation solid-state lighting, because of their long lifetime, small size, high efficacy, and low energy consumption. However, for general illumination applications, the external quantum efficiency of LEDs, determined by the internal quantum efficiency (IQE) and the light extraction efficiency, must be further increased. The IQE is determined by crystal quality and epitaxial layer structure and high value of IQE more than 70% for blue LEDs have been already reported. However, there is much room for improvement of light extraction efficiency because most of the generated photons from active layer remain inside LEDs by total internal reflection at the interface of semiconductor with air due to the high refractive index difference between LEDs epilayer (for GaN, n=2.5) and air (n=1). The light confining in LEDs will be reabsorbed by the metal electrode or active layer, reducing the efficacy of LEDs. Here, we present the first demonstration of enhanced light extraction by forming a MgO nano-pyramids structure on the surface of vertical-LEDs. The MgO nano-pyramids structure was successfully fabricated at room temperature using conventional electron-beam evaporation without any additional process. The nano-sized pyramids of MgO are formed on the surface during growth due to anisotropic characteristics between (111) and (200) plane of MgO. The ZnO layer with quarter-wavelength in thickness is inserted between GaN and MgO layers to increase the critical angle for total internal reflection, because the refractive index of ZnO (n=1.94) could be matched between GaN (n=2.5) and MgO (n=1.73). The MgO nano-pyramids structure and ZnO refractive-index modulation layer enhanced the light extraction efficiency ofV-LEDs with by 49%, comparing with the V-LEDs with a flat n-GaN surface. The angular-dependent emission intensity shows the enhanced light extraction through the side walls of V-LEDs as well as through the top surface of the n-GaN, because of the increase in critical angle for total internal reflection as well as light scattering at the MgO nano-pyramids surface.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.174-174
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• 2014

Memristor devices are one of the most promising candidate approaches to next-generation memory technologies. Memristive switching phenomena usually rely on repeated electrical resistive switching between non-volatile resistance states in an active material under the application of an electrical stimulus, such as a voltage or current. Recent reports have explored the use of variety of external operating parameters, such as the modulation of an applied magnetic field, temperature, or illumination conditions to activate changes in the memristive switching behaviors. Among these possible choices of signal controlling factors of memristor, photon is particularly attractive because photonic signals are not only easier to reach directly over long distances than electrical signal, but they also efficiently manage the interactions between logic devices without any signal interference. Furthermore, due to the inherent wave characteristics of photons, the facile manipulation of the light ray enables incident light angle controlled memristive switching. So that, in the tautological sense, device orienting position with regard to a photon source determines the occurrence of memristive switching as well. To demonstrate this position controlled memory device functionality, we have fabricated a metal-semiconductor-metal memristive switching nanodevice using ZnO nanorods. Superhydrophobicity employed in this memristor gives rise to illumination direction selectivity as an extra controlling parameter which is important feature in emerging. When light irradiates from a point source in water to the surface treated device, refraction of light ray takes place at the water/air interface because of the optical density differences in two media (water/air). When incident light travels through a higher refractive index medium (water; n=1.33) to lower one (air; n=1), a total reflection occurs for incidence angles over the critical value. Thus, when we watch the submerged NW arrays at the view angles over the critical angle, a mirror-like surface is observed due to the presence of air pocket layer. From this processes, the reversible switching characteristics were verified by modulating the light incident angle between the resistor and memristor.